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    5116165 Price and Stock

    Phoenix Contact 1616582

    Circular Metric Connectors RF-16M1N8A9003
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    Mouser Electronics 1616582
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    Phoenix Contact 1616570

    Circular Metric Connectors RF-16F1N8A9003
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    Phoenix Contact 1616581

    Circular Metric Connectors RF-16M1N8A9002
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    • 1 $18.56
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    Phoenix Contact 1616569

    Circular Metric Connectors RF-16F1N8A9002
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    • 1 $18.72
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    Phoenix Contact 1616583

    Circular Metric Connectors RF-16M1N8A90DU
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    Mouser Electronics 1616583
    • 1 $19.35
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    5116165 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    HYB3116165BSJ

    Abstract: HYB3118165 HYB3118165BSJ HYB5118165 P-TSOP 5118165BSJ-60
    Text: 1M x 16-Bit Dynamic RAM 1k & 4k Refresh Hyper Page Mode- EDO 5116165BSJ-50/-60 5116165BSJ-50/-60 HYB3116165BSJ/(BST(L)-50/-60 HYB3118165BSJ/(BST(L)-50/-60 Advanced Information • 1 048 576 words by 16-bit organization • 0 to 70 °C operating temperature


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    PDF 16-Bit HYB5116165BSJ-50/-60 HYB3116165BSJ/ HYB3118165BSJ/ HYB5116165 HYB3116165 HYB5118165 HYB3118165 HYB3116165BSJ HYB3118165 HYB3118165BSJ HYB5118165 P-TSOP 5118165BSJ-60

    5116 ram

    Abstract: HYB5118165BSJ-50 HYB5116165BSJ-50 HYB5116165BSJ-60 HYB5116165BSJ-70 HYB5118165BSJ HYB5118165BSJ-60 HYB5118165BSJ-70 TRAC-70
    Text: 1M x 16-Bit Dynamic RAM 1k & 4k Refresh Hyper Page Mode- EDO 5116165BSJ -50/-60/-70 HYB5118165BSJ -50/-60/-70 Advanced Information • • • • • • • • • • • • 1 048 576 words by 16-bit organization 0 to 70 °C operating temperature


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    PDF 16-Bit HYB5116165BSJ HYB5118165BSJ HYB5118165BSJ-50) HYB5118165BSJ-60) HYB51181 165BSJ-50/-60/-70 16-EDO P-SOJ-42 5116 ram HYB5118165BSJ-50 HYB5116165BSJ-50 HYB5116165BSJ-60 HYB5116165BSJ-70 HYB5118165BSJ-60 HYB5118165BSJ-70 TRAC-70

    5116 ram

    Abstract: Q67100-Q1107 HYB5116165BSJ-50 HYB5116165BSJ-60 HYB5116165BSJ-70 HYB5118165BSJ HYB5118165BSJ-50 HYB5118165BSJ-60 HYB5118165BSJ-70
    Text: 1M x 16-Bit Dynamic RAM 1k & 4k Refresh Hyper Page Mode- EDO 5116165BSJ -50/-60/-70 HYB5118165BSJ -50/-60/-70 Advanced Information • • • • • • • • • • • • 1 048 576 words by 16-bit organization 0 to 70 °C operating temperature


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    PDF 16-Bit HYB5116165BSJ HYB5118165BSJ HYB5118165BSJ-50) HYB5118165BSJ-60) HYB51181 165BSJ-50/-60/-70 16-EDO P-SOJ-42 5116 ram Q67100-Q1107 HYB5116165BSJ-50 HYB5116165BSJ-60 HYB5116165BSJ-70 HYB5118165BSJ-50 HYB5118165BSJ-60 HYB5118165BSJ-70

    IBM025161LG5D60

    Abstract: gm72v16821 MD908 KM48S2020 TC59R1809 GM72V1682 KM4232W259Q60 KM416S1120A IBM025171LG5D-70 KM44S4020AT
    Text: Fujitsu Microelectronics Inc. Hitachi America Ltd. Hyundai Electronics America Inc. IBM Microelectronics LG Semicon America Inc. formerly Goldstar Mitsubishi Electronics America Inc. NEC Electronics Inc. Micron Technology Inc. Mosel Vitelic Inc. MoSys Inc.


    Original
    PDF MB81141621 MB81141622 MB81G8322 MB81116421 TC59R1608 2ns500MHz TC59R0808 IBM025161LG5D60 gm72v16821 MD908 KM48S2020 TC59R1809 GM72V1682 KM4232W259Q60 KM416S1120A IBM025171LG5D-70 KM44S4020AT

    Untitled

    Abstract: No abstract text available
    Text: SIEM ENS 1M x 16-Bit Dynamic RAM 1k & 4k Refresh Hyper Page Mode - EDO HYB 5116165BSJ -50/-60/-70 HYB 5118165BSJ -50/-60/-70 P re lim in a ry In fo rm a tio n • 1 048 576 w o rd s by 16-bit o rg a n iz a tio n m ax. 4 9 5 a ctive m W ( H Y B 3 1 1 6 1 6 5 B S J -6 0 )


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    PDF 16-Bit Y//77777/

    5116 RAM

    Abstract: bsj7 siemens fog mug 14 431 TNC 24 mk 2 HYB3116165BSJ-50 HYB3116165BSJ-60 HYB3116165BSJ-70 HYB3118165BSJ-50 HYB3118165BSJ-60
    Text: SIEM EN S HYB 5116165BSJ -50/-60/-70 HYB 5118165BSJ -50/-60/-70 1M X 16-Bit Dynamic RAM 1k & 4k Refresh Hyper Page Mode - EDO Preliminary Inform ation max. 495 active mW ( HYB3116165BSJ-60) max. 440 active mW ( HYB3116165BSJ-70) 11 mW standby (TTL) 5.5 mW standby (MOS)


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    PDF 16-Bit 5116165BSJ 5118165BSJ HYB3118165BSJ-50) HYB3118165BSJ-60) I/01-I/016 16-EDO 777777yà 5116 RAM bsj7 siemens fog mug 14 431 TNC 24 mk 2 HYB3116165BSJ-50 HYB3116165BSJ-60 HYB3116165BSJ-70 HYB3118165BSJ-50 HYB3118165BSJ-60

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS 1M x 16-Bit Dynamic RAM 1k & 4k-Refresh Hyper Page Mode- EDO HYB 5116165BSJ -50/-60/-70 HYB 5118165BSJ -50/-60/-70 Advanced Information • 1 048 576 words by 16-bit organization • 0 to 70 "C operating temperature • Performance: ÍRA C RAS access time


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    PDF 16-Bit 5116165BSJ 5118165BSJ 5118165BSJ-50) 5118165BSJ-60) 5118165BSJ-7EDO E35hQ5 165BSJ-50/-60/-70 16-EDO

    Untitled

    Abstract: No abstract text available
    Text: 5116165A Series Preliminary 1,048,576-word x 16-btt Dynamic Random Access Memory Rev. 0.0 Jul. 20.1994 HITACHI T be H itachi HM 5116165A is a CMOS dynamic R A M organized 1,048.576 w ords x 16 bits. It employs the most advanced CMOS technology for h ig h p e rfo rm a n c e an d low p o w e r.


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    PDF HM5116165A 576-word 16-btt 116165A mW/495 mW/440 5116165AJ

    5116165

    Abstract: 5118165 EDO DRAM
    Text: SIEMENS 1M x 16-Bit Dynamic RAM 1k & 4k-Refresh Hyper Page Mode- EDO HYB 5116165BSJ -50/-60/-70 HYB 5118165BSJ -50/-60/-70 Advanced Information • 1 048 576 words by 16-bit organization • 0 to 70 °C operating temperature • Performance: -50 -60 ÍR A C


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    PDF 16-Bit 5116165BSJ 5118165BSJ 5118165BSJ-50) 5118165BSJ-60) 5118165BSJ-70) 5116165BSJ-50) 5116165BSJ-60) 165BSJ-50/-60/-70 5116165 5118165 EDO DRAM

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS Summary of Types Summary of Types Type | Ordering | Code Package Description DRAM Page i Memory Components HYB 514100BJ-50 067100-0971 P-SOJ-26/20-5 4 M X 1,5 V, 50 ns 47 HYB514100BJ-60 067100-0759 P-SOJ-26/20-5 4 M x 1, 5 V, 60 ns 47 HYB 514100BJ-70


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    PDF P-SOJ-26/20-5

    thv8

    Abstract: HYB39S16800T 16m x 4 hyb
    Text: SIEMENS SIMM-Modules Product View S IM M -M odules Product View SIMM-Modules non-parity 2M X 32 FPM EDO FPM G = Gold leaded Semiconductor Group 26 EDO SIEMENS SIMM-Modules Product View 4M x 3 2 8M FPM EDO 32 FPM L-SIM-72-12 HYM 324020S/GS X EDO L-SIM-72-15


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    PDF L-SIM-72-12 324020S/GS 324025S/GS L-SIM-72-15 328020S/GS 328025S/GS 364020S/GS L-SIM-72-13 364035S/GS thv8 HYB39S16800T 16m x 4 hyb

    TSOP 86 Package

    Abstract: msm5116165b
    Text: O K I Semiconductor MSM5116 16 5 B_ E 2 G 0 0 5 3 - 1 7 -4 1 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION 5116165B is a 1,048,576-word x 16-bit dynamic RAM fabricated inOki's silicon-gate CMOS technology. The 5116165B achieves high integration, high-speed operation, and low-power


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    PDF MSM5116165B 576-Word 16-Bit TheMSM5116165B MSM5116165B 42-pin 50/44-pin TSOP 86 Package

    Untitled

    Abstract: No abstract text available
    Text: SIEM ENS Summary of Types Summary of Types Type Ordering Code Package Description DRAM Pa Memory Components HYB 5 1 1000BJ-50 Q67100-Q1056 P-SOJ-26/20-1 300 mil 1 M X 1, 50 ns 33 HYB 5 1 1000BJ-60 Q67100-Q518 P-SOJ-26/20-1 300 mil 1 M X 1, 60 ns 33 HYB 5 1 1000BJ-70


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    PDF 1000BJ-50 1000BJ-60 1000BJ-70 1000BJL-50 1000BJL-60 1000BJL-70 514256B-50 514256B-60 514256B-70 514256BJ-50

    5117400

    Abstract: sem 2500 7212 tube
    Text: Packing Information SIEM ENS DRAMS in Tape & Reel Package Type Device Type Devices Per Reel Tape Width P-SOJ-26/20-1 ' HYB 5 1 1000BJ HYB 514256BJ 1500 24 mm P-SO J-26/20-5?l HYB 514100BJ HYB 514400BJ 1500 24 mm P-SOJ-28-2 HYB 514800BJ 1000 24 mm P-SOJ-40-1


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    PDF P-SOJ-26/20-1 J-26/20-5? P-SOJ-28-2 P-SOJ-40-1 P-TSOPII-26/20-1 P-SOJ-26/24-1 1000BJ 514256BJ 514100BJ 514400BJ 5117400 sem 2500 7212 tube

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS 1 M x 1 6 - B it D y n a m ic R A M H Y B 5 1 1 6 1 6 5 B S J - 5 0 /- 6 0 /- 7 0 1 k & 4 k R e fre s h H Y B 5 1 1 8 1 6 5 B S J - 5 0 /- 6 0 /- 7 0 H y p e r P a g e M o d e - E D O Prelim inary Inform ation max. 495 active mW ( HYB3116165BSJ-60)


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    PDF HYB3116165BSJ-60) HYB3116165BSJ-70) HYB5118165BSJ HYB5116165BSJ 35b05 DG71b30

    3165805AT-60

    Abstract: Q67100
    Text: SIEMENS Summary of Types in Alphanumerical Order Summary of Types in Alphanumerical Order Ordering Code Page HYB 3116160BSJ-50 on request 618 HYB 311616QBSJ-60 on request 618 HYB 3116160BSJ-70 on request 618 HYB 3116160BST-50 on request 618 HYB 3116160BST-60


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    PDF 3116160BSJ-50 311616QBSJ-60 3116160BSJ-70 3116160BST-50 3116160BST-60 3116160BST-70 3116165BSJ-50 3116165BSJ-60 3116165BSJ-70 3116165BST-50 3165805AT-60 Q67100

    Untitled

    Abstract: No abstract text available
    Text: 5116165A S e rie s 1,048,576-word x Preliminary 16-bit Dynamic Random A cce ss Memory Rev. 0.0 Jul. 20. 1994 H IT A C H I T h e H ita ch i H M 5 1 1 6 1 6 5 A is a C M O S d yn am ic R A M o rg a n ized 1 ,0 4 8 .5 7 6 w o rd s x 16 b its. It em ploys the m ost advanced C M O S technology for


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    PDF HM5116165A 576-word 16-bit mW/495 mW/440 HM511616SA HM5116165AJ CP-42D)

    SIEMENS BST 68

    Abstract: SIEMENS BST P 45 115 SIEMENS BST P SIEMENS BST t SIEMENS BST f 04 SIEMENS BST 5118165 SIEMENS BST Q SIEMENS BST N 35 SIEMENS BST G 03 60
    Text: SIEMENS 1M x 16-Bit Dynamic RAM 1k & 4k Refresh Hyper Page Mode- EDO 5116165BSJ-50/-60 5116165BSJ-50/-60 HYB3116165BSJ/(BST(L)-50/-60 HYB3118165BS J/(BST(L)-50/-60 Advanced Information • 1 048 576 words by 16-bit organization • 0 to 70 °C operating temperature


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    PDF 16-Bit HYB5116165BSJ-50/-60 HYB3116165BSJ/ HYB3118165BS P-SOJ-42 P-TSOPI1-50/44 400mil) SIEMENS BST 68 SIEMENS BST P 45 115 SIEMENS BST P SIEMENS BST t SIEMENS BST f 04 SIEMENS BST 5118165 SIEMENS BST Q SIEMENS BST N 35 SIEMENS BST G 03 60

    Untitled

    Abstract: No abstract text available
    Text: H M 5 1 1 6 1 6 5 A S e r ie s Preliminary 1 ,0 4 8 ,576-w o rd x 16-blt D ynam ic R an d o m A c c e s s M em ory HITACHI The Hitachi 5116165A is a CMOS dynamic RAM organized 1,048,576 words x 16 bits. It employs the most advanced CMOS technology for high perform ance and low pow er. The


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    PDF 576-w HM5116165A HM5116165AJ-6 HM5116165AJ-7 HM5116165AJ-8 400-m 42-pin CP-42D) 400-mil,

    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM5116 16 5B_ E 2 G 0 0 5 3 - 1 7 -4 1 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION 5116165B is a 1,048,576-word x 16-bit dynamic RAM fabricated inOki's silicon-gate CMOS technology. The 5116165B achieves high integration, high-speed operation, and low-power


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    PDF MSM5116 576-Word 16-Bit TheMSM5116165B MSM5116165B 42-pin 50/44-pin

    HYB39S16400T

    Abstract: hyb39s16800t 314100BJBJL 3165805AT Siemens Multibank DRAM HYB5118160BS 4K x 1 DRAM
    Text: SIEMENS 4M Product View 4M Product View 4M DRAM 1M X 4 4M X 1 256kX 16 HVB 314100BJ/BJL HYB 314400BJ/BJL HYB314405BJ/BJL HYB 314171BJ/BJL HYB 314175BJ/BJL HYB 514100BJ/BJL HYB 514400BJ/BJL HYB 514405BJ/BJL HYB 314265BJ/BJL HYB 514171 BJ/BJL HYB 514175BJ/BJL


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    PDF 256kX 314100BJ/BJL 314400BJ/BJL HYB314405BJ/BJL 314171BJ/BJL 314175BJ/BJL 514100BJ/BJL 514400BJ/BJL 514405BJ/BJL 314265BJ/BJL HYB39S16400T hyb39s16800t 314100BJBJL 3165805AT Siemens Multibank DRAM HYB5118160BS 4K x 1 DRAM

    511000BJ-70

    Abstract: Q67100-Q1101 514256BJ-70 361120S-70 5118165BSJ-60 5117405BJ-60 Q67100-Q727 hyb 511
    Text: SIEM EN S Summary of Types in Alphanumerical Order Summary of Types in Alphanumerical Order Type Memory Components HYB 3116160BSJ-50 HYB 3116160BSJ-60 HYB 3116160BSJ-70 HYB 3116400BJ-50 HYB 3116400BJ-60 HYB 3116400BJ-70 HYB 3116400BT-50 HYB 3116400BT-60 HYB 3116400BT-70


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    PDF 3116160BSJ-50 3116160BSJ-60 3116160BSJ-70 3116400BJ-50 3116400BJ-60 3116400BJ-70 3116400BT-50 3116400BT-60 3116400BT-70 3117400BJ-50 511000BJ-70 Q67100-Q1101 514256BJ-70 361120S-70 5118165BSJ-60 5117405BJ-60 Q67100-Q727 hyb 511