WED8L24513V
Abstract: No abstract text available
Text: WED8L24513V Asynchronous SRAM, 3.3V, 512Kx24 FEATURES DESCRIPTION 512Kx24 bit CMOS Static The WED8L24513VxxBC is a 3.3V, twelve megabit SRAM constructed with three 512Kx8 die mounted on a multi-layer laminate substrate. With 10 to 15ns access times, x24 width and a 3.3V
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WED8L24513V
512Kx24
512Kx24
WED8L24513VxxBC
512Kx8
WED8L24513V
DSP5630x
2106xL
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Untitled
Abstract: No abstract text available
Text: WED8L24514V White Electronic Designs Asynchronous SRAM, 3.3V, 512Kx24 FEATURES DESCRIPTION 512Kx24 bit CMOS Static Random Access Memory Array The WED8L24514VxxBC is a 3.3V, twelve megabit SRAM constructed with three 512Kx8 die mounted on a multi-layer laminate substrate. With 10 to 15ns
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WED8L24514V
512Kx24
512Kx24
WED8L24514VxxBC
512Kx8
WED8L24514V
DSP5630x
MO-163
WED8L24514V12BI
WED8L24514V15BI
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WED8L24513V
Abstract: 2106XL
Text: WED8L24513V White Electronic Designs Asynchronous SRAM, 3.3V, 512Kx24 FEATURES DESCRIPTION 512Kx24 bit CMOS Static Random Access Memory Array Fast Access Times: 10, 12, and 15ns Master Output Enable and Write Control TTL Compatible Inputs and Outputs
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WED8L24513V
512Kx24
512Kx24
14mmx22mm
MO-163)
WED8L24513VxxBC
512Kx8
2106XL
WED8L24513V
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512kx8
Abstract: No abstract text available
Text: WED8L24514V Asynchronous, 3.3V, 512Kx24 FEATURES 512Kx24 bit CMOS Static The WED8L24514VxxBC is a 3.3V, twelve megabit SRAM constructed with three 512Kx8 die mounted on a multi-layer laminate substrate. With 10 to 15ns access times, x24 width and a 3.3V operating voltage, the WED8L24514V is ideal for creating a single
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WED8L24514V
512Kx24
512Kx24
MO-163)
14mmx22mm
DSP5630xTM
512Kx8,
WED8L24514V10BC
WED8L24514V12BC
WED8L24514V15BC
512kx8
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5630x
Abstract: No abstract text available
Text: EDI8L24512V 512Kx24 SRAM Module Preliminary 512Kx24 CMOS High Speed Static RAM Features 512Kx24 bit CMOS Static DSP Memory Solution • Motorola DSP 5630x • Analog Devices SHARCTM Random Access Memory Array • Fast Access Times: 12, 15, 17, and 20ns The EDI8L24512V is a high speed, 3.3V, 12 megabit
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EDI8L24512V
512Kx24
5630x
EDI8L24512V
DSP5630x
EDI8L24512V12AC
EDI8L24512V15AC
EDI8L24512V17AC
5630x
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Untitled
Abstract: No abstract text available
Text: WED8L24514V Asynchronous SRAM, 3.3V, 512Kx24 FEATURES DESCRIPTION 512Kx24 bit CMOS Static The WED8L24514VxxBC is a 3.3V, twelve megabit SRAM constructed with three 512Kx8 die mounted on a multi-layer laminate substrate. With 10 to 15ns access times, x24 width and a 3.3V
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WED8L24514V
512Kx24
512Kx24
MO-163)
14mmx22mm
DSP5630x
512Kx8,
WED8L24514V10BC
WED8L24514V12BC
WED8L24514V15BC
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ames 5
Abstract: WED8L24514V wed8l24514
Text: WED8L24514V Asynchronous SR AM, 3.3V SRAM, 3.3V, 512Kx24 FEATURES DESCRIPTION n 512Kx24 bit CMOS Static n Random Access Memory Array The WED8L24514VxxBC is a 3.3V, twelve megabit SRAM constructed with three 512Kx8 die mounted on a multilayer laminate substrate. With 10 to 15ns access times, x24
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WED8L24514V
512Kx24
512Kx24
WED8L24514VxxBC
512Kx8
WED8L24514V
DSP5630x
WED8L24514V10BC
WED8L24514V12BC
ames 5
wed8l24514
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7 k 3456
Abstract: WED8L24513V
Text: WED8L24513V Asynchronous SRAM, 3.3V, 512Kx24 FEATURES DESCRIPTION n 512Kx24 bit CMOS Static The WED8L24513VxxBC is a 3.3V, twelve megabit SRAM constructed with three 512Kx8 die mounted on a multi-layer laminate substrate. With 10 to 15ns access times, x24 width and a 3.3V
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WED8L24513V
512Kx24
512Kx24
WED8L24513VxxBC
512Kx8
WED8L24513V
DSP5630x
2106xL
7 k 3456
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Untitled
Abstract: No abstract text available
Text: 1.5Mx8/512Kx24, 20 - 45ns, STACK 30A154-03 A 12 Megabit High Speed CMOS SRAM DPS512X24MFn3 PRELIMINARY DESCRIPTION: SLCC Stack The DPS512X24MFn3 High Speed SRAM ‘’STACK’’ modules are a revolutionary new memory subsystem using Dense-Pac Microsystems’ ceramic Stackable Leadless Chip Carriers SLCC .
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5Mx8/512Kx24,
30A154-03
DPS512X24MFn3
DPS512X24MFn3
12-Megabits
500mV
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Untitled
Abstract: No abstract text available
Text: White Electronic Designs WED8L24513V Asynchronous SRAM, 3.3V, 512Kx24 FEATURES DESCRIPTION 512Kx24 bit CMOS Static Random Access Memory Array The WED8L24513VxxBC is a 3.3V, twelve megabit SRAM constructed with three 512Kx8 die mounted on a multi-layer
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512Kx24
512Kx24
MO-163)
14mmx22mm
WED8L24513V
WED8L24513VxxBC
512Kx8
WED8L24513V
DSP5630x
2106XL
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723653
Abstract: 72V7290 72V3613 72V7250 72V3611 72V3623 72V72100 72V7230 72V7240 72V7260
Text: Selector Guide for FIFO Memory Products • Synchronous FIFOs SuperSync II, SuperSync™ SyncFIFO™, DualSync™ • Bi-Directional Synchronous FIFOs • Asynchronous FIFOs the leading provider of FIFO memories. July’00 IDT FIFO Memory Products Quick Reference Guide
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512-bit
16K-bit
64K-bit
128K-bit
256K-bit
512K-bit
100MHz
133MHz
723653
72V7290
72V3613
72V7250
72V3611
72V3623
72V72100
72V7230
72V7240
72V7260
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723653
Abstract: BI 7284 72V7250 72V72100 72V7230 72V7240 72V7260 72V7270 72V7280 72V7290
Text: Selector Guide for FIFO Memory Products • Synchronous FIFOs SuperSync II, SuperSync™ SyncFIFO™, DualSync™ • Bi-Directional Synchronous FIFOs • Asynchronous FIFOs the leading provider of FIFO memories. Jan’00 IDT FIFO Memory Products Quick Reference Guide
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512-bit
16K-bit
64K-bit
128K-bit
512K-bit
7236x3/72V36x3
723653
BI 7284
72V7250
72V72100
72V7230
72V7240
72V7260
72V7270
72V7280
72V7290
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723653
Abstract: 72V841 72825 72V3622 BI 7284 72V3613 723674 72V211 72V221 72V241
Text: Selector Guide for FIFO Memory Products • Synchronous FIFOs SuperSync II, SuperSync™ SyncFIFO™, DualSync™ • Bi-Directional Synchronous FIFOs • Asynchronous FIFOs the leading provider of FIFO memories. July’99/PC IDT FIFO Memory Products Width
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99/PC
28-TP
36-bit
18-bit
723653
72V841
72825
72V3622
BI 7284
72V3613
723674
72V211
72V221
72V241
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DSP56000
Abstract: DSP56300 DSP56301 DSP56302 DSP56303 DSP56303PV80 102AAA 5782.00 DSP56000 APR
Text: MOTOROLA Order by APR 26/D Motorola Order Number Rev. 0 , 4/05/99 Semiconductor Application Note by Phil Brewer 1 Introduction This application note describes how to interface Flash memory to Motorola’s DSP56300 family of digital signal processors (DSPs). This document is a supplement to the
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DSP56300
24-Bit
Office141
DSP56000
DSP56301
DSP56302
DSP56303
DSP56303PV80
102AAA
5782.00
DSP56000 APR
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gmZ4S
Abstract: 5400 samsung lcd monitor circuit diagram C0012-DSR-01C gmZ4U hyundai L19 MC141584 genesis lcd controller dram FSDATA45 lg crt monitor circuit diagram GM72V161621ET
Text: DATA SHEET gmZ4 C0012-DAT-01C July 2000 Genesis Microchip Inc. 165 Commerce Valley Dr. West, Thornhill, ON Canada L3T 7V8 Tel: 905 889-5400 Fax: (905) 889-0035 2150 Gold Street, Alviso, CA USA 95002 Tel: (408) 262-6599 Fax: (408) 262-6365 www.genesis-microchip.com / info@genesis-microchip.on.ca
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C0012-DAT-01C
DAT-0012-A
C0012-DAT-01B
256-pin
gmZ4S
5400 samsung lcd monitor circuit diagram
C0012-DSR-01C
gmZ4U
hyundai L19
MC141584
genesis lcd controller dram
FSDATA45
lg crt monitor circuit diagram
GM72V161621ET
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motorola linear databook
Abstract: small signal transistor MOTOROLA DATABOOK BCR 133 Motorola DSP56300 16 bit processor schematic motorola cmos databook motorola handbook transistor DA3 309 DSP56000 DSP56301
Text: Freescale Semiconductor, Inc. MOTOROLA Order by APR 26/D Motorola Order Number Rev. 0 , 4/05/99 Semiconductor Application Note Freescale Semiconductor, Inc. by Phil Brewer 1 Introduction This application note describes how to interface Flash memory to Motorola’s DSP56300 family of digital signal
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DSP56300
24-Bit
Office141
motorola linear databook
small signal transistor MOTOROLA DATABOOK
BCR 133 Motorola
16 bit processor schematic
motorola cmos databook
motorola handbook
transistor DA3 309
DSP56000
DSP56301
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gmZ4S
Abstract: Genesis microchip dat gmZ4U MC141584 DSR-0012 HITACHI microcontroller 0xc0 genesis video controller gm72v161621et Genesis Microchip osd DAT-0012-B
Text: PRELIMINARY DATA SHEET gmZ4 DAT-0012-B December 1999 Genesis Microchip Inc. 165 Commerce Valley Dr. West, Thornhill, ON Canada L3T 7V8 Tel: 905 889-5400 Fax: (905) 889-0035 1871 Landings Drive, Mountain View, CA, USA 94043 Tel: (650) 428-4277 Fax (650) 428-4288
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DAT-0012-B
DAT-0012-B
DAT-0012-A
DSR-0012
336-pin
256-pin
gmZ4S
Genesis microchip dat
gmZ4U
MC141584
HITACHI microcontroller 0xc0
genesis video controller
gm72v161621et
Genesis Microchip osd
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0d108
Abstract: DSP56300 APR26 DSP56300FM DSP56301 DSP56301UM DSP56302 DSP56303 DSP56303EVM DSP56303UM
Text: Freescale Semiconductor Application Note APR26 Rev. 1, 10/2005 Interfacing Flash Memory with the DSP56300 Family of Digital Signal Processors by Phil Brewer This application note describes how to interface Flash memory to the DSP56300 family of DSPs. This document is a
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APR26
DSP56300
24-Bit
0d108
APR26
DSP56300FM
DSP56301
DSP56301UM
DSP56302
DSP56303
DSP56303EVM
DSP56303UM
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TQFP 100 PACKAGE footprint
Abstract: TQFP 144 PACKAGE footprint bga 208 PACKAGE 144-BB BGA and QFP Package 256X8 208 BGA 72V3613 BI 7284 footprint tqfp 208
Text: Selector Guide for 6WDQGDUG 6WDQGDUG ,)2 ),)2 Products From IDT, the leading provider of FIFO solutions Standard Standard FIFO FIFO Products Products ¾ ¾ ¾ ¾ ¾ FIFO Quick Reference Guide ……………………… Featured Product: TeraSync FIFO Family ……….
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512KX24
Abstract: 128KX24
Text: ma DSP SOLUTIONS aSCTRONIC DÉSKSN& W C X24ASYNCHRONOUS FAMILY 128K AND 512Kx24 SV/3.3V EDI's x24 Asynchronous SRAM family is de signed in support of Analog Devices ADSP- * 2106x DSPs. The family includes densities of 128Kx24 and 5!2Kx24. The family of devices
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X24ASYNCHRONOUS
512Kx24
2106x
128Kx24
2Kx24.
MO-47AE
EDI8L24128CxxAC
EDI8L24512CxxAC
EDI8L24128VxxAC
EDI8L24512VxxAC
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DSP5630X
Abstract: No abstract text available
Text: K EDI8L24512V X 512KX24 SRAMModule E lfC nO M C DE96N1 NC Preliminary 512KX24 CMOSHigh Speed Static RAM Features 512KX24 bit CMOS Static The EDI8L24512V is a high speed, 3.3V, 12 megabit DSP Memory Solution • Motorola DSP 5630x SRAM. The device is available with access times of 12,
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DE96N1
EDI8L24512V
512KX24
5630x
EDI8L24512V
DSP5630x
E08L24512V
DSP5630X
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SP5630
Abstract: No abstract text available
Text: ^EDI ED I8L24512V 512KX24 SRAM Module ELECTRONIC DESIGNS, INC Preliminary 512KX24 CMOS High Speed Static RAM Features 512Kx24 bit CMOS Static The ED I8L24512V is a high speed, 3.3V, 12 m egabit DSP Memory Solution • Motorola DSP 5630x SRAM. The device is available w ith access tim es of 12,
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I8L24512V
512KX24
I8L24512V
5630x
ca-40
EDI8L24512V15AC
EDI8L24512V17AC
EDI8L24512V20AI
SP5630
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5630x
Abstract: 512Kx2
Text: m E D I8 L 2 4 5 1 2 V x 512Kx24 SRAM Module ELECTRONIC DESIGNS. INC Preliminary 512Kx24 CMOS High Speed Static RAM Features 512Kx24 bit CMOS Static The ED I8L24512V is a high speed, 3.3V, 12 m egabit DSP Memory Solution • SRAM. The device is available w ith access tim es of 12,
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512Kx24
5630x
M0-47AE
EDI8L24512V
EDI8L24512V
-40Cto
EDI8L24512V12AC
EDI8L24512V15AC
5630x
512Kx2
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817 BNY
Abstract: No abstract text available
Text: TABLE OF CONTENTS Dense-Pac M icrosystem s M od u le s and M o n o lit h ic s . 9 Emerging Technology/Products. 10
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128Kx32/256Kx16/512Kx8,
250ns,
512Kx8,
300ns,
817 BNY
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