EDI88512
Abstract: No abstract text available
Text: EDI88512CA-XMXG WPS512K8X-XRJXG White Electronic Designs 512Kx8 Plastic Monolithic SRAM CMOS WEDC's ruggedized plastic 512Kx8 SRAM that allows the user to capitalize on the cost advantage of using a plastic component while not sacrificing all of the reliability
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512Kx8
EDI88512CA-XMXG
WPS512K8X-XRJXG
EDI88512
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512Kx8s
Abstract: No abstract text available
Text: EDI88512CA-XMXG WPS512K8X-XRJXG 512Kx8 Plastic Monolithic SRAM CMOS FEATURES WEDC's ruggedized plastic 512Kx8 SRAM that allows the user to capitalize on the cost advantage of using a plastic component while not sacrificing all of the reliability available in a full military device.
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EDI88512CA-XMXG
WPS512K8X-XRJXG
512Kx8
512Kx8s
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Untitled
Abstract: No abstract text available
Text: EDI88512CA-XMXG WPS512K8X-XRJXG 512Kx8 Plastic Monolithic SRAM CMOS FEATURES WEDC's ruggedized plastic 512Kx8 SRAM that allows the user to capitalize on the cost advantage of using a plastic component while not sacrificing all of the reliability available in a full military device.
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EDI88512CA-XMXG
WPS512K8X-XRJXG
512Kx8
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Untitled
Abstract: No abstract text available
Text: EDI88512CA-XMXG WPS512K8X-XRJXG 512Kx8 Plastic Monolithic SRAM CMOS WEDC's ruggedized plastic 512Kx8 SRAM that allows the user to capitalize on the cost advantage of using a plastic component while not sacrificing all of the reliability available in a full military device.
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EDI88512CA-XMXG
WPS512K8X-XRJXG
512Kx8
EDI88512CA-XMXG
MIL-STD-883
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Untitled
Abstract: No abstract text available
Text: EDI88512CA White Electronic Designs 512Kx8 Monolithic SRAM, SMD 5962-95600 FEATURES Access Times of 15, 17, 20, 25, 35, 45, 55ns Data Retention Function LPA version TTL Compatible Inputs and Outputs Fully Static, No Clocks Organized as 512Kx8
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512Kx8
EDI88512CA
EDI88512CA
MIL-STD-883
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Untitled
Abstract: No abstract text available
Text: EDI88512C 512Kx8 Monolithic SRAM, CMOS FEATURES 512Kx8 bit CMOS Static The EDI88512C is a 4 megabit Monolithic CMOS Static RAM. Random Access Memory The 32 pin DIP pinout adheres to the JEDEC evolutionary standard for the four megabit device. Both the DIP and CSOJ packages
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EDI88512C
512Kx8
EDI88512C
EDI88128C.
100ns
EDI88512LP)
MIL-PRF-38535.
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EDI88128C
Abstract: EDI88512C MIL-PRF38535
Text: White Electronic Designs EDI88512C 512Kx8 Monolithic SRAM, CMOS FEATURES The EDI88512C is a 4 megabit Monolithic CMOS Static RAM. 512Kx8 bit CMOS Static Random Access Memory The 32 pin DIP pinout adheres to the JEDEC evolutionary standard for the four megabit device. Both the DIP and
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EDI88512C
512Kx8
EDI88512C
EDI88128C.
100ns
EDI88512LP)
512Kx8
MIL-STD-883
EDI88128C
MIL-PRF38535
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Untitled
Abstract: No abstract text available
Text: EDI88512C 512Kx8 Monolithic SRAM, CMOS FEATURES 512Kx8 bit CMOS Static The EDI88512C is a 4 megabit Monolithic CMOS Static RAM. Random Access Memory The 32 pin DIP pinout adheres to the JEDEC evolutionary standard for the four megabit device. Both the DIP and CSOJ packages
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EDI88512C
512Kx8
100ns
EDI88512C
EDI88128C.
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EDI88128C
Abstract: EDI88512C MIL-PRF38535
Text: White Electronic Designs EDI88512C 512Kx8 Monolithic SRAM, CMOS FEATURES 512Kx8 bit CMOS Static Random Access Memory The EDI88512C is a 4 megabit Monolithic CMOS Static RAM. The 32 pin DIP pinout adheres to the JEDEC evolutionary standard for the four megabit device. Both the DIP and
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EDI88512C
512Kx8
EDI88512C
EDI88128C.
100ns
EDI88512LP)
512Kx8
MIL-STD-883
EDI88128C
MIL-PRF38535
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DPS512X8MKN3
Abstract: No abstract text available
Text: 512Kx8, 20 - 45ns, STACK/DIP 30A129-11 D 4 Megabit High Speed CMOS SRAM DPS512X8MKN3 PRELIMINARY DESCRIPTION: The DPS512X8MKN3 High Speed SRAM ‘’STACK’’ devices are a revolutionary new memory subsystem using Dense-Pac Microsystems’ ceramic Stackable
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512Kx8,
30A129-11
DPS512X8MKN3
DPS512X8MKN3
600-mil-wide,
32-pin
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EDI88512
Abstract: No abstract text available
Text: EDI88512C HI-RELIABILITY PRODUCT 512Kx8 Monolithic SRAM CMOS FEATURES • 512Kx8 bit CMOS Static The EDI88512C is a 4 megabit Monolithic CMOS Static RAM. ■ Random Access Memory • Access Times of 70, 85, 100ns • Data Retention Function LP version • TTL Compatible Inputs and Outputs
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EDI88512C
512Kx8
100ns
EDI88512C
EDI88128C.
MIL-STD-883
EDI88512
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Untitled
Abstract: No abstract text available
Text: EDI88512C HI-RELIABILITY PRODUCT 512Kx8 Monolithic SRAM CMOS FEATURES • 512Kx8 bit CMOS Static The EDI88512C is a 4 megabit Monolithic CMOS Static RAM. ■ Random Access Memory • Access Times of 70, 85, 100ns • Data Retention Function LP version • TTL Compatible Inputs and Outputs
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EDI88512C
512Kx8
EDI88512C
100ns
EDI88128C.
EDI88512LP)
512Kx8
MIL-STD-883
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EDI88128C
Abstract: EDI88512C
Text: EDI88512C HI-RELIABILITY PRODUCT 512Kx8 Monolithic SRAM CMOS FEATURES • 512Kx8 bit CMOS Static The EDI88512C is a 4 megabit Monolithic CMOS Static RAM. ■ Random Access Memory • Access Times of 70, 85, 100ns • Data Retention Function LP version • TTL Compatible Inputs and Outputs
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EDI88512C
512Kx8
EDI88512C
100ns
EDI88128C.
EDI88512LP)
512Kx8
MIL-STD-883
EDI88128C
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BLF 272
Abstract: bq4842 bq4852Y BD-962
Text: bq4852Y RTC Module With 512Kx8 NVSRAM Features General Description ➤ Integrated SRAM, real-time clock, CPU supervisor, crystal, power-fail control circuit, and battery The bq4852Y RTC Module is a nonvolatile 4,194,304-bit SRAM organized as 524,288 words by 8 bits
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bq4852Y
512Kx8
304-bit
BLF 272
bq4842
BD-962
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Untitled
Abstract: No abstract text available
Text: bq4852Y RTC Module With 512Kx8 NVSRAM Features General Description ➤ Integrated SRAM, real-time clock, CPU supervisor, crystal, power-fail control circuit, and battery The bq4852Y RTC Module is a nonvolatile 4,194,304-bit SRAM organized as 524,288 words by 8 bits with
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bq4852Y
512Kx8
10-year
304-bit
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Untitled
Abstract: No abstract text available
Text: bq4852Y RTC Module With 512Kx8 NVSRAM Features General Description ➤ Integrated SRAM, real-time clock, CPU supervisor, crystal, power-fail control circuit, and battery The bq4852Y RTC Module is a nonvolatile 4,194,304-bit SRAM organized as 524,288 words by 8 bits with
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bq4852Y
512Kx8
304-bit
10-year
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WDS6
Abstract: bd96 BM4B
Text: bq4852Y RTC Module With 512Kx8 NVSRAM Features General Description ➤ Integrated SRAM, real-time clock, CPU supervisor, crystal, power-fail control circuit, and battery The bq4852Y RTC Module is a nonvolatile 4,194,304-bit SRAM organized as 524,288 words by 8 bits with
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bq4852Y
512Kx8
10-year
304-bit
WDS6
bd96
BM4B
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Untitled
Abstract: No abstract text available
Text: KM684000A Family CMOS SRAM 512Kx8 bit High Speed CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.4 um CMOS • Organization : 512Kx8 • Power Supply Voltage : Single 5V +/-10% • Low Data Retention Voltage : 2V Min • Three state output and TTL Compatible
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OCR Scan
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KM684000A
512Kx8
512Kx8
32-DIP,
32-SOP,
32-TSOP
KM684000AL
KM684000AL-L
KM6840
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Untitled
Abstract: No abstract text available
Text: W D EDI8F8512C I ELECTRONIC DESIGNS INC. Commercial Four Megabit SRAM Module 512Kx8 Static RAM Features CMOS, Module The EDI8F8512C is a 4096K bit CMOS Static RAM based on four 128Kx8 or256Kx4 high speed Static RAMs 512Kx8 bit CMOS Static Random Access Memory
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OCR Scan
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EDI8F8512C
512Kx8
EDI8F8512C
4096K
128Kx8
or256Kx4
100ns
EDI8F8512LP)
the128Kx8
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EDI8F8512C85B6C
Abstract: 28Kx8
Text: ^EDI _EDI8F8512C ELECTRONIC DESIGNS INC. * High Speed Four Megabit SRAM Module 512Kx8 Static RAM CMOS, Module Features The EDI8F8512C is a 4096K bit CMOS Static RAM based on four 128Kx8 or 256Kx4 high speed Static RAMs 512Kx8 bit CMOS Static Random Access Memory
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OCR Scan
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EDI8F8512C
512Kx8
100ns
EDI8F8512LP)
70-100ns)
20-55ns)
EDI8F8512C
4096K
128Kx8
EDI8F8512C85B6C
28Kx8
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EDI8M8512LP120C6B
Abstract: No abstract text available
Text: ^EDI EDI8M8512C Electronic Designs Inc. High Speed Four Megabit SRAM Module 512Kx8 Static RAM Features CMOS, Module The EDI8M8512C is a 4096K bit CMOS Static RAM 512Kx8 bit CMOS Static based on four 128Kx8 Static RAMs mounted on a multi Random Access Memory
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OCR Scan
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EDI8M8512C
512Kx8
150ns
150ns
EDI8M8512C
4096K
128Kx8
sLP70C6C
EDI8M8512LP85C6B
EDI8M8512LP120C6B
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ED188512C
Abstract: No abstract text available
Text: E D I885 12C ^ E D I Electronic D#rignf Inc.« Four Megabit Monolithic SRAM 512Kx8 Static RAM CMOS, Monolithic Features The EDI88512C is a 4 megabit Monolithic C M O S Static RAM. The32 pin DIP pinoutadheres tothe JEDEC standard for 512Kx8 bit C M O S Static
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OCR Scan
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512Kx8
100ns
EDI88512C
The32
188512LP)
EDI88512C85ZB
EDI88512C100ZB
188512LP70CB
188512LP85CB
ED188512C
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EDI88128C
Abstract: EDI8M8512C
Text: EDI8M8512C m 90/100/120/150 o \ Module The f u t u r s . . . Ä ¥ Ä M 1 O 512Kx8 SRAM CMOS, High Speed Module The EDI8M8512C is a 4096K 512Kx8 bit High Speed Static RAM module constructed using four EDI88128C (128Kx8) Static RAMs in leadless chip
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OCR Scan
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EDI8M8512C
512Kx8
EDI8M8512C
4096K
EDI88128C
128Kx8)
128Kx8
32-pin,
EDI88128C
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PDF
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A35Z
Abstract: EDI88512CA35CB EDI88512C
Text: ^ED I EDI88512CA ELECTRONIC DESIGNS IN C • Four Megabit Monolithic SRAM 512Kx8 Static RAM CMOS, Monolithic Ik M /h Features The ED I88512C A is a 4 m egabit M onolithic CMOS 512Kx8 bit CM OS Static S tatic RAM. Random Access M em ory • Access Tim es: 2 5 ,3 5 , and 45ns
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OCR Scan
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EDI88512CA
512Kx8
I88512C
8512C.
EDI88128CS.
EDI88512CA25CB
EDI88512CA25CC
EDI88512CA25CI
006I0
A35Z
EDI88512CA35CB
EDI88512C
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