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    GDIP1-T32

    Abstract: CY7C1048-45F CY7C1048 qml-38535 5962-95600 5962-9560003MXA smd marking code tm 5962-9560004MYA ed188512 EDI88512CA20N36B
    Text: REVISIONS LTR ] DESCRIPTION DATE APPRO VED YR-MO-DA A Change minimum limit of dimension Q for case outline T. Changes in accordance with NOR 5962-R 145-97. 96-11-27 Raymond Monnin B Add note 4 / to \ \ j\ _ q z ’ ^ D R ’ anc* *R 'n tab'e Add note 5/ to % |_qx.


    OCR Scan     		5962-R145-97. OEU86 TD0470Ã D032M4T GDIP1-T32 CY7C1048-45F CY7C1048 qml-38535 5962-95600 5962-9560003MXA smd marking code tm 5962-9560004MYA ed188512 EDI88512CA20N36B PDF

    ED188512CA20N36B

    Abstract: ED188512CA25CB ED188512CA20 75B7 EDI88512CA20N36B EDI88512LPA20F32B EDI88128CS EDI88512CA EDI88512LPA EDI8M8512C
    Text: W5X EDI88512CA 512Kx8 Static Ram ELECTRONIC DESIGNS, INC 512Kx8 Static RAM CMOS, Monolithic Features 512Kx8 bit CMOS Static Random Access Memory The EDI88512CA is a 4 megabit Monolithic CMOS Static • Access Times: 17*, 2 0 ,2 5 ,3 5 , and 45ns • Data Retention Function LP version


    OCR Scan     		EDI88512CA 512Kx8 15qC/W 20X/W 01581USA EDIBB512CA 6/96ECO ED188512CA20N36B ED188512CA25CB ED188512CA20 75B7 EDI88512CA20N36B EDI88512LPA20F32B EDI88128CS EDI88512CA EDI88512LPA EDI8M8512C PDF

    EDI88512C

    Abstract: ED188512C EDI88512C70CB EDI88512C100CB EDI88512C100LB EDI88512C70LB EDI88512C85CB EDI88512C85LB The32 ed188512
    Text: ELEC TRO NIC ^ E D D ES IG N S IN C SIE D • 3230114 0QD123Ö 550 M E L D E D I8 8 5 1 2 C I _ EI«drort c D rtg n * Inc. ■ — ■ — Four Megabit Monolithic SRAM h w y /M 512Kx8 Static RAM CMOS, Monoiithic F M ñ T []© íj


    OCR Scan     		35301m EDI88512C 512Kx8 EDI88512C The32 ED188512LP) MIL-STD-883, EDI88S12C70NB ED188512C EDI88512C70CB EDI88512C100CB EDI88512C100LB EDI88512C70LB EDI88512C85CB EDI88512C85LB ed188512 PDF

    ED188512CA17

    Abstract: EDI88512CA20N36B 2A153 ED188512CA
    Text: W D\ EDI88512CA 512Kx8 Static Ram ELÈCTRON« 0ESK3N& NC. 512Kx8Static RAM CMOS, Monolithic Features 512Kx8 bit CMOS Static Random Access Memory • Access Times: 17*, 20,25,35, and 45ns The EDI88512CA is a 4 megabit Monolithic CMOS Static RAM. • Data Retention Function LP version


    OCR Scan     		EDI88512CA 512Kx8 512Kx8Static EDI88512CA 15X/W 01581USA ED188512CA17 EDI88512CA20N36B 2A153 ED188512CA PDF

    Untitled

    Abstract: No abstract text available
    Text: ZEDÌ EDI88512C Electronic Daslgns Inc. Four Megabit Monolithic SRAM 512Kx8 Static RAM CMOS, Monolithic D i F [ R » Y f l © i Features The EDI88512C is a 4 megabit Monolithic CMOS Static RAM. The32 pin DIP pinout adherestothe JEDEC standard for the four megabit device.


    OCR Scan     		EDI88512C 512Kx8 EDI88512C The32 EDI88512LP) MIL-STD-883, 100ns DaI88512LP85LB PDF

    EDI88512C55NB

    Abstract: EDI88512LP100CB power 22E dip EDI88128C EDI88512C EDI8M8512C EDI88512C55N
    Text: * * Ê2EDI_ ELECTRONIC DESIGNS INC. — EDI88512C Four Megabit Monolithic SRAM 512Kx8 Static RAM CMOS, Monolithic r a iU The EDI88512C is a 4 megabit Monolithic CMOS Static RAM. The 32 pin DIP pinout adheres to the JEDEC stan­ dard for the four megabit device and is a pin for pin


    OCR Scan     		EDI88512C 512Kx8 EDI88512C EDI8M8512C. EDI88128C. EDI88512LP) MIL-STD-883, SL222. EDI88512C55NB EDI88512LP100CB power 22E dip EDI88128C EDI8M8512C EDI88512C55N PDF

    Untitled

    Abstract: No abstract text available
    Text: ^ E D EDI88257C l 2S6Kx8 Static Ram ElECIROMC DESK5N& NC. 256Kx8 Static RAM CMOS, Module F e a tu r e s The EDI88257C is a 2 megabit Monolithic CMOS Static RAM. 256Kx8 bit CMOS Static The 32 pin DIP pinout adheres to the JEDEC standard forthe two Random Access Memory


    OCR Scan     		EDI88257C 256Kx8 100ns EDI88257C EDI8M8257C. 512Kx8 EDI88512C. EDI88257CB PDF

    ED188512C

    Abstract: No abstract text available
    Text: E D I885 12C ^ E D I Electronic D#rignf Inc.« Four Megabit Monolithic SRAM 512Kx8 Static RAM CMOS, Monolithic Features The EDI88512C is a 4 megabit Monolithic C M O S Static RAM. The32 pin DIP pinoutadheres tothe JEDEC standard for 512Kx8 bit C M O S Static


    OCR Scan     		512Kx8 100ns EDI88512C The32 188512LP) EDI88512C85ZB EDI88512C100ZB 188512LP70CB 188512LP85CB ED188512C PDF

    ED188512LP85NB

    Abstract: No abstract text available
    Text: E D I8 8 5 1 2 C W D I ELECTRONIC DESIGNS INC. • Four Megabit Monolithic SRAM 512Kx8 Static RAM CMOS, Monolithic The EDI88512C is a 4 megabit Monolithic CMOS Static RAM. The 32 pin DIP pinout adheres to the JEDEC stan­ dard for the four megabit device and is a pin for pin


    OCR Scan     		512Kx8 EDI88512C EDI8M8512C. EDI88128C. EDI88512LP) MIL-STD-883, EDI88512LP55PM EDI88512LP70PM EDI88512LP85PM ED188512LP85NB PDF

    ED188512CA25CB

    Abstract: No abstract text available
    Text: ^EDI EDI88512CA 512Kx8 Static Ram ELECTRONIC DESIGNS, INC. 5962-95600 Features 512Kx8 Static RAM CMOS, Monolithic 512Kx8 bit CMOS Static Random Access Memory • Access Times: 17*, 20,25,35, and 45ns • Data Retention Function LP version • TTL Compatible Inputs and Outputs


    OCR Scan     		EDI88512CA 512Kx8 EDI88512CA ECO/7587 5962-95600XXMYA 20C/W 5962-95600XXMTA ED188512CA25CB PDF