Contextual Info: P ^ E U iÄ M 8 Y ir r t e T 51C258Lt LOW POWER 64K x 4 CHMOS DYNAMIC RAM Maximum Access Time ns Maximum CHMOS Standby Currant (mA) 51C258L-12 120 0.1 • Low Power Data Retention - Standby current, CHMOS — 100 pA (max.) - Refresh period, RAS-Only — 32 ms

51C258L

Abstract: 51C258L-12 51C258L-15 51C258L-20 28012* intel
Contextual Info: in t e i 51C258Lt LOW PO W ER 6 4 K x 4 C H M O S DYN A M IC RA M 51C258L-12 51C258L-15 51C258L-20 120 0.1 150 200 0.1 0.1 Maximum Access Time ns Maximum CHMOS Standby Current (mA) Low O perating Current — 50 m A (max.) Low Power Data Retention - sta n d b y current, C H M O S — 100 /iA

Contextual Info: PEELM M kUY 51C258LT LOW POWER 64Kx4 CHMOS DYNAMIC RAM ¡ n te T 51C258L-12 120 0.1 Maximum Access Time ns Maximum CHMOS Standby Current (mA) 51C258L-15 150 0.1 51C258L-20 200 0.1 • Low Operating Current — 50 mA (max.) ■ Low Power Data Retention - Standby current, CHMOS — 100 /iA

51C256L

Abstract: 51C258L 51C258L-12 51C258L-15 51C258L-20
Contextual Info: in t e T 5102581-* LOW POWER 6 4 K x 4 CHMOS DYNAMIC RAM 51C258L-12 120 0.1 Maximum Access Time ns Maximum CHMOS Standby Currant (mA) 51C258L^20 200 0.1 51C258L-15 150 0.1 • Low Operating Current — 50 mA (max.) Low Power Data Retention - Standby current, CHMOS — 100/iA