Untitled
Abstract: No abstract text available
Text: O K I Semiconductor 51V16100_ 16,777,216-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE T YPE DESCRIPTION The 51V16100 is a new generation dynam ic organized as 16,777,216-w ord x 1-bit, The technology u sed to fabricate theM SM 51 V16100 is OKI's CM O S silicon gate process technology.
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MSM51V16100_
216-Word
MSM51V16100
216-w
V16100
cycles/64m
7242MQ
GD173Ã
MSM51V16100
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Untitled
Abstract: No abstract text available
Text: DRAMs i n ASMs 1 "’i ^ it ft ^ S r DRAMs I_ 1 Meg 4 Meg 16 M e g I 64K x 16 128K x 32 3 V 12BK x 32 (S V) 1-M eg x 16 |3V) i i i i M SM 5 1 1 6 6 4 8 M S M 5 4 V 3 2 1 2 8 (E D O ) M S M 5 4 3 2 1 2 8 {E D O } i i t 256Kx4 256K x 16 (3 V) 2 5 6K x 1 6 (5 V )
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51V16160A
51V18160A
116160A
118160A
256Kx4
514260B/BSL
514256C/CL
51V6800A
51V16100A
51V17100A
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor 51V16100_ 16,777,216-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The 51V16100 is a new generation dynamic organized as 16,777,216-word x 1-bit. The technology used to fabricate the MSM51V I6100 is OKI's CMOS silicon gate process technology.
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MSM51V16100_
216-Word
MSM51V16100
MSM51V
I6100
cycles/64ms
b724240
001035b
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MSM51V16100
Abstract: No abstract text available
Text: O K I Semiconductor MSM5 1 V16100 _ 16,777,216-W ord x 1 -B it DYN AM IC RAM : FAST PAGE MODE TYPE DESCRIPTION The 51V16100 is a new generation dynamic organized as 16,777,216-word x 1-bit. The technology used to fabricate the 51V16100 is OKI's CMOS silicon gate process technology.
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MSM51V16100_
216-Word
MSM51V16100
cycles/64ms
MSM51V16100
b724240
001fl35b
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intel 82c51
Abstract: Mitsubishi 82c54 intel p8085a PD8155H 51V16160 nec 8212c 82C55 harris 82c55 82C59 toshiba m5l8288
Text: M em ory 16-M eg D R A M s Refresh Toshiba NEC Hitachi Samsung Micron M SM 5116100 OKI Part Number Configuration 16 M e g x 1 5 4K T C 5 1 1610 0 p P D 4 2 1 6100 HM 5116100 KM41C16000 M T4C16M 1A1 M S M 5 1 1 616 0 1 M e g x 16 5 4K TC5116160A H PD 4216160
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51V16100
51V16160
51V16400
51V17100
51V17400
51V18160
TC5116160A
TC5116800A
TC5117800A
uPD4216100
intel 82c51
Mitsubishi 82c54
intel p8085a
PD8155H
nec 8212c
82C55
harris 82c55
82C59 toshiba
m5l8288
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MSM51V16100
Abstract: 2M2H
Text: O K I Semiconductor MSM5 1 V16100_ 16,777,216-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The 51V16100 is a new generation dynamic organized as 16,777,216-word x 1-bit. The technology used to fabricate the MSM51VI6100 is OKI's CMOS silicon gate process technology.
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MSM51V16100_
216-Word
MSM51V16100
MSM51VI6100
cycles/64ms
72M2MD
0D173Ã
MSM51V16100
2M2H
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MSM51V16100
Abstract: No abstract text available
Text: O K I Semiconductor 51V16100_ 16,777,216-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The M SM 51V 16100 is a new generation d y n am ic o rgan ized as 16,777,216-w o rd x 1-bit. The technology used to fabricate the M S M 51V I6100 is OKI's C M O S silicon g ate process technology.
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MSIWI51VI6100_
216-Word
MSM51V16100
MSM51VI6100
cycles/64ms
MSM51V16100
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DU9 308
Abstract: 32-PIN MSM5117900-70 MSM5117900-80
Text: O K I Semiconductor MSM5117900 2,097,152-Word x 9-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The M SM 5117900 is a new generation D ynam ic RAM organized as 2,097,152-w ord x 9-bit configuration. The technology used to fabricate the M SM 5117900 is OKI's CMOS silicon gate process technology.
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MSM5117900
152-Word
MSM5117900
cycles/32ms
32PIN
SOJ32-P-4QO
42PIN
DU9 308
32-PIN
MSM5117900-70
MSM5117900-80
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