D5NK5
Abstract: P5NK52ZD P5NK52 STD5N STP5NK52ZD zener diode B5 JESD97 STB5NK52ZD-1 STD5NK52ZD STD5NK52ZD-1
Text: STP5NK52ZD - STB5NK52ZD-1 STD5NK52ZD - STD5NK52ZD-1 N-channel 520V - 1.22Ω - 4.4A - TO-220 - DPAK - I2PAK - IPAK Zener-protected SuperMESH Power MOSFET General features Type VDSS RDS on ID Pw STB5NK52ZD-1 520V <1.5Ω 4.4A 70W STD5NK52ZD 520V <1.5Ω
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STP5NK52ZD
STB5NK52ZD-1
STD5NK52ZD
STD5NK52ZD-1
O-220
STD5NK52ZD
STP5NK52ZD
O-220
D5NK5
P5NK52ZD
P5NK52
STD5N
zener diode B5
JESD97
STB5NK52ZD-1
STD5NK52ZD-1
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IRFR410B
Abstract: IRFU410B
Text: IRFR410B / IRFU410B 520V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to
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IRFR410B
IRFU410B
IRFU410B
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SSP1N50B
Abstract: No abstract text available
Text: SSP1N50B SSP1N50B 520V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to
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SSP1N50B
SSP1N50B
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SSI1N50B
Abstract: SSW1N50B Supersot6
Text: SSW1N50B / SSI1N50B SSW1N50B / SSI1N50B 520V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to
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SSW1N50B
SSI1N50B
SSI1N50B
Supersot6
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SSU1N50A
Abstract: transistors substitute SSR1N50BTF
Text: SSR1N50B / SSU1N50B SSR1N50B / SSU1N50B 520V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to
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SSR1N50B
SSU1N50B
SSU1N50B
SSU1N50A
SSU1N50BTU
O-251
SSU1N50A
transistors substitute
SSR1N50BTF
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SSR1N50B
Abstract: SSU1N50B
Text: SSR1N50B / SSU1N50B SSR1N50B / SSU1N50B 520V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to
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SSR1N50B
SSU1N50B
SSU1N50B
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Untitled
Abstract: No abstract text available
Text: SSU1N50B 520V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching
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SSU1N50B
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D5NK5
Abstract: P5NK52 STP5NK52ZD
Text: STP5NK52ZD - STB5NK52ZD-1 STD5NK52ZD - STD5NK52ZD-1 N-CHANNEL 520V - 1.22Ω - 4.4A TO-220-DPAK-IPAK-I2PAK SuperFREDMesh MOSFET TARGET SPECIFICATION Table 1: General Features TYPE STB5NK52ZD-1 STD5NK52ZD STD5NK52ZD-1 STP5NK52ZD • ■ ■ ■ ■ ■ ■
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STP5NK52ZD
STB5NK52ZD-1
STD5NK52ZD
STD5NK52ZD-1
O-220-DPAK-IPAK-I2PAK
STD5NK52ZD-1
STP5NK52ZD
O-220
D5NK5
P5NK52
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p5nk52zd
Abstract: D5NK5
Text: STP5NK52ZD - STB5NK52ZD-1 STD5NK52ZD - STD5NK52ZD-1 N-CHANNEL 520V - 1.22Ω - 4.4A TO-220-DPAK-IPAK-I2PAK SuperFREDMesh MOSFET TARGET SPECIFICATION Table 1: General Features TYPE STB5NK52ZD-1 STD5NK52ZD STD5NK52ZD-1 STP5NK52ZD • ■ ■ ■ ■ ■ ■
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STP5NK52ZD
STB5NK52ZD-1
STD5NK52ZD
STD5NK52ZD-1
O-220-DPAK-IPAK-I2PAK
STD5NK52ZD-1
STP5NK52ZD
O-220
p5nk52zd
D5NK5
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P5NK52
Abstract: D5NK5 p5nk52zd STP5NK52ZD STD5NK52ZD-1 B5NK52ZD p5nk52Z
Text: STP5NK52ZD - STB5NK52ZD-1 STD5NK52ZD - STD5NK52ZD-1 N-CHANNEL 520V - 1.22Ω - 4.4A TO-220-DPAK-IPAK-I2PAK SuperFREDMesh MOSFET TARGET SPECIFICATION Table 1: General Features TYPE STB5NK52ZD-1 STD5NK52ZD STD5NK52ZD-1 STP5NK52ZD • ■ ■ ■ ■ ■ ■
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STP5NK52ZD
STB5NK52ZD-1
STD5NK52ZD
STD5NK52ZD-1
O-220-DPAK-IPAK-I2PAK
STD5NK52ZD-1
STP5NK52ZD
O-220
P5NK52
D5NK5
p5nk52zd
B5NK52ZD
p5nk52Z
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Untitled
Abstract: No abstract text available
Text: AOD9N52 520V,9A N-Channel MOSFET General Description Product Summary The AOD9N52 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular ACDC applications. By providing low RDS on , Ciss and Crss along with
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AOD9N52
AOD9N52
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Untitled
Abstract: No abstract text available
Text: SSFP7N65 StarMOST Power MOSFET • Extremely high dv/dt capability ■ Low Gate Charge Qg results in VDSS = 650V Simple Drive Requirement ID25 = 7A ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Very good manufacturing repeatability
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SSFP7N65
00A/s
di/dt200A/S
width300S;
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KF12N68
Abstract: KF12N68F
Text: SEMICONDUCTOR KF12N68F TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description C A O F This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor
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KF12N68F
Fig11.
Fig12.
Fig13.
Fig14.
KF12N68
KF12N68F
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KF10N68F TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description C A O F This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor
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KF10N68F
Fig12.
Fig13.
Fig14.
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KF4N65FM TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description C A O F This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor
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KF4N65FM
Fig12.
Fig13.
Fig14.
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KF10N68
Abstract: KF10N68F NSC10
Text: SEMICONDUCTOR KF10N68F TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description C A O F This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor
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KF10N68F
Fig12.
Fig13.
Fig14.
Fig15.
KF10N68
KF10N68F
NSC10
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KF7N68F TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description C A O F This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor
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KF7N68F
Fig12.
Fig13.
Fig14.
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KF5N65
Abstract: No abstract text available
Text: SEMICONDUCTOR KF5N65D/I TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KF5N65D This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for
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KF5N65D/I
KF5N65D
Fig11.
Fig15.
KF5N65
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KF10N68F TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description C A O F This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor
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KF10N68F
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Fig13.
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Planar
Abstract: KF12N68F
Text: SEMICONDUCTOR KF12N68F TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description C A O F This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor
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KF12N68F
Fig12.
Fig13.
Fig14.
Planar
KF12N68F
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KP8N65D/I TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KP8N60D This Super Junction MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor
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KP8N65D/I
KP8N60D
Fig13.
Fig14.
Fig15.
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MOSFET
Abstract: Planar KF10N65F
Text: SEMICONDUCTOR KF10N65F TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description C A O F This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor
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KF10N65F
Fig12.
Fig13.
Fig14.
MOSFET
Planar
KF10N65F
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KF7N68F
Abstract: Diode is 10-16
Text: SEMICONDUCTOR KF7N68F TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description C A O F This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor
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KF7N68F
Fig11.
Fig12.
Fig13.
Fig14.
KF7N68F
Diode is 10-16
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KF10N65F TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description C A O F This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor
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KF10N65F
Fig12.
Fig13.
Fig14.
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