Untitled
Abstract: No abstract text available
Text: FU JI tìusELTUtìue 2SK2519-01 N-channel MOS-FET FAP-II Series 200V > Features - High Speed Switching - Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Avalanche Proof 0 ,4 Q 10A 40W > Outline Drawing > Applications
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2SK2519-01
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Diode MARKING S37
Abstract: DIODE A131 ERC38
Text: E R C 3 8 ia : Outline Drawings « a a ia ^ ^ - K FAST RECOVERY DIODE A • 45^1 I Features • a tf - K tf # # ! ;» » .' ■ Super high speed switching. : Marking • f-'sX'sn&lfikv fit-3 - K; È Low VF in turn on Color COC6 : White n m z High voltage by mesa design.
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ERC38
Diode MARKING S37
DIODE A131
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Untitled
Abstract: No abstract text available
Text: KS823C04 5A • £ t * Out l i ne Drawings SCHOTTKY BARRIER DIODE ■ 4# : F e a t u r e s Su rface m o u n t device. • t e V F Low V f • it' Connection Diagram S u per high speed s w itc h in g . •f u - i — ttwcjttftlBMte H igh reliability by p laner d es ig n .
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KS823C04
500ns,
523fl7T
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MTIS
Abstract: A419 KS823C04 A418
Text: KS823C04 5A • £ t * Out l i ne Drawings SCHOTTKY BARRIER DIODE ■ 4# : F e a t u r e s Su rface m o u n t device. • t e V F Low V f • it' Connection Diagram S u per high speed s w itc h in g . •f u - i — ttwcjttftlBMte H igh reliability by p laner d es ig n .
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KS823C04
500ns,
5E3fl712
MTIS
A419
A418
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17ki
Abstract: 4r3t160y-080 4R3TI60Y-080 VH800 GDDS271 2u 87 x diode 2U 73 diode
Text: 4R3TI60Y-080 gafEffl * - V - * H »J DIODE and TYRISTOR MODULE I Features • i i —is 3 ^ • Glass Passivation Chip Easy Connection • Kfeiiffi Insulated Type • d d i / t # L' • d v /d t iif i* ''^ ? t ' Large d i/d t Large d v /d t • f f l i i : Applications
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4R3TI60Y-080
GDDS271
17ki
4r3t160y-080
4R3TI60Y-080
VH800
2u 87 x diode
2U 73 diode
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F3687
Abstract: fuji igbt ms5f3637
Text: X This Material C o p y r i g h t e d B y Its R e s p e c t i v e M a n u f a c t u r e r Ratings and characteristics of Fuji IGBT 1 MB H O 8 D — 1 2 0 1. Clitl ine Drawing 2. Equivalent circuit C:Collector G:Gate o C O M N F C T IO N D © _3- Absolute maximum ratings
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MS5F3687
H04-004-07
00D43SS
0D0435fci
H04-004-03
F3687
fuji igbt
ms5f3637
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1DI100MA-050
Abstract: 2d175m-120 6DI20MS-050 fuji darlington module 6di50m-120 1DI100MA 1DI100MA050 2DI50M-050 1DI100 M613
Text: H igh H f e Series Darlington Modules Ratings and Characteristics Type Single Darlington Modules 600V Dual Darlington Modules 600V Six Pack Darlington Modules 600V SIL Six Pack Darlington Modules 600V v CE0 sus IV) vCEX(sus) <V) •c (A) hFE (min) •c (A)
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1DI30MA-050
1DI50MA-050
1DI100MA-050
1DI200MA-050
1DI300M-050
1DI400M-050
223A7C
DD2S21
2d175m-120
6DI20MS-050
fuji darlington module
6di50m-120
1DI100MA
1DI100MA050
2DI50M-050
1DI100
M613
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