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    DV06

    Abstract: No abstract text available
    Text: HY62V8400 Series -H YU N D AI 512K X 8-bit CMOS SRAM PRELIMINARY DESCRIPTION The HY62V8400 is a high-speed, low power and 524,288 x 8-bits CMOS static RAM fabricated using Hyundai’s high perfromance twin tub CMOS process technology. The HY62V8400 has a data retention mode that


    OCR Scan     		HY62V8400 55/70/85/100ns -100/120/150/200ns 525mil32pin 1DE03-11-MAY95 HY62V8400LP DV06 PDF

    taa 723

    Abstract: HY62V8400LG HY62V8400LP HY62V8400LR2 HY62V8400LT2
    Text: “H Y U N D A I HY62V8400 Series _ 5 1 2 K X 8-bit CMOS SRAM PR ELIM IN A R Y DESCRIPTION Tiie HY62VÔ400 is a high-speed, low power and 524.288 x 8-bits CMOS static RAM fabricated using Hyundai’s high perfromance twin tub CMOS process technology. The HY62V8400 has a data retention mode that


    OCR Scan     		HY62V8400 512Kx HY62V5400 85/70/8SHOOns -100/120/150/200ns G0b37b 1DE03-11-MAY95 taa 723 HY62V8400LG HY62V8400LP HY62V8400LR2 HY62V8400LT2 PDF