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Abstract: No abstract text available
Text: VDRM VDSM IT AV M IT(RMS) ITSM V(T0) rT = = = = = = = 4400 V 5200 V 4120 A 6470 A 85.2x103 A 1.04 V 0.115 mΩ Ω Phase Control Thyristor 5STP 52U5200 Doc. No. 5SYA1042-02 Apr. 03 • Patented free-floating silicon technology • Low on-state and switching losses
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52U5200
5SYA1042-02
52U5200
52U5000
52U4600
CH-5600
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ABB VS 4000
Abstract: No abstract text available
Text: Key Parameters VDSM = 5200 ITAVM = 5200 ITRMS = 8164 ITSM = 82500 VT0 = 1.03 rT = 0.110 V A A A V mΩ Phase Control Thyristor 5STP 52U5200 Preliminary Doc. No. 5SYA 1042-01 January, 99 Features • Patented free-floating silicon technology • Low on-state and switching losses
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52U5200
52U5200
52U5000
52U4600
67xVDRM
CH-5600
ABB VS 4000
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ABB thyristor 5
Abstract: A110 B110 C110
Text: VDRM VDSM IT AV M IT(RMS) ITSM V(T0) rT = = = = = = = 4400 5200 4120 6470 85.2x103 1.04 0.115 V V A A A V mΩ Ω Phase Control Thyristor 5STP 52U5200 Doc. No. 5SYA1042-02 Dec. 03 • Patented free-floating silicon technology • Low on-state and switching losses
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52U5200
5SYA1042-02
52U5200
52U5000
52U4600
5SYA2020
5SYA2034
CH-5600
ABB thyristor 5
A110
B110
C110
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ABB 5STP 52U5200
Abstract: 5stp 52U5200 5STP52U5200
Text: VDSM = 5200 V ITAVM = 5200 A ITRMS = 8164 A ITSM = 82500 A VT0 = 1.03 V rT = 0.110 mΩ Phase Control Thyristor 5STP 52U5200 Doc. No. 5SYA1042-02 Dec.00 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications
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52U5200
5SYA1042-02
52U5200
52U5000
52U4600
67xVDRM
CH-5600
ABB 5STP 52U5200
5stp 52U5200
5STP52U5200
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5STP52U5200
Abstract: ABB 5STP 52U5200
Text: VDSM ITAVM ITRMS ITSM VT0 rT = = = = = = 5200 V 5200 A 8164 A 82500 A 1.03 V 0.110 mΩ Ω Phase Control Thyristor 5STP 52U5200 Doc. No. 5SYA1042-02 Sep. 01 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications
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Original
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PDF
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52U5200
5SYA1042-02
52U5200
52U5000
52U4600
CH-5600
5STP52U5200
ABB 5STP 52U5200
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