a17c6
Abstract: 0814 de MSM532001B
Text: O K I Semiconductor M S M 532001B 262,144-Word x 8-Bit Mask ROM DESCRIPTION T he ? ° 1B iSta h l8 h "SF>eed, SUiCOn g a te C M O S M ask R O M w ith 262,144-w ord x 16-bit capacity. 5320018 o p e ra te s o n a sin g le 5.0 V p o w e r su p p ly a n d is TTL co m p atib le. T h e c h ip s asv n ch ro -
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MSM532001B
144-Word
144-w
16-bit
532001B
256Kisable
724H40
a17c6
0814 de
MSM532001B
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MSM532001B
Abstract: No abstract text available
Text: O K I Semiconductor 532001B 262,144-Word x 8-Bit Mask ROM DESCRIPTION T he O K I M SM 532001B is a high-speed silicon gate C M O S M ask ROM w ith 262,144-w ord x 16-bit capacity. T he M SM 532001B operates on a single 5.0 V power supply and is T T L com patible. T he chips asynchro
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MSM532001B
144-Word
MSM532001B
16-bit
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor 532001B 262,144-Word x 8-Bit Mask ROM DESCRIPTION The OKI M SM 532001B is a high-speed silicon gate CM OS M ask ROM with 262,144-word x 16-bit capacity. The M SM 532001B operates on a single 5.0 V power supply and is TTL compatible. The chips asynchro
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MSM532001B
144-Word
532001B
16-bit
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531030
Abstract: MSM27C1622BZ 02CM 27C131 27c822 27c832
Text: M ask RO M s 1 Meg 2 Meg 4 Meg I 8 Meg i I I i i 128Kx8 256K x 8 512K x 8 I I 1-Meg x 8 I 2-Meg x 8 I M SM 531020B M SM 531000B M SM 531030B M SM 531021B M S M 5 3 1001B M SM 531031B M SM 532021B M SM 532001B M SM 532031B M S M 5 34 0 21 C M S M 5 34 0 01 C
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128Kx8
531020B
531000B
531030B
531021B
1001B
531031B
532021B
532001B
532031B
531030
MSM27C1622BZ
02CM
27C131
27c822
27c832
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02CM
Abstract: No abstract text available
Text: ROMs M a sk RO M s 1-M eg M a s k R O M s Part Number Configuration P ins/Package M SM 531020B 128K x 8 2 8 / DIP | M SM 531000B 128K x 8 2 8 / D IP 100 5.0 V M SM 5 3 1 0 3 0 B 128K x 8 2 8 / D IP 150 3.3 V 5.0 V 1 A ccess Tima M a x ns Voltage 70 5.0 V
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531020B
531000B
531021B
531001B
531031B
532021B
532001B
532031B
532020B
532000B
02CM
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