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    531000B Price and Stock

    Kostal GmbH & Co KG 10400692531000

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    531000B Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    LH531000B

    Abstract: LH531000BN-S LH531000B-S
    Text: 531000B-S CMOS 1M 128K x 8 3 V-Drive MROM FEATURES DESCRIPTION • 131,072 words × 8 bit organization The 531000B-S is a mask-programmable ROM organized as 131,072 × 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access time: 500 ns (MAX.)


    Original     		PDF LH531000B-S LH531000B-S 28-pin, 450-mil 28-PIN P028-P-0450) 28SOP LH531000B LH531000B LH531000BN-S

    LH531000B

    Abstract: LH531000BN-S LH531000B-S
    Text: 531000B-S CMOS 1M 128K x 8 3 V-Drive Mask-Programmable ROM FEATURES DESCRIPTION • 131,072 words × 8 bit organization The 531000B-S is a mask-programmable ROM organized as 131,072 × 8 bits. It is fabricated using silicon-gate CMOS process technology.


    Original     		PDF LH531000B-S LH531000B-S 28-PIN 28-pin, 450-mil A8-P-0450) 28SOP LH531000B LH531000B LH531000BN-S

    mrom

    Abstract: LH531000B
    Text: 531000B CMOS 1M 128K x 8 MROM FEATURES DESCRIPTION • 131,072 words × 8 bit organization The 531000B is a mask-programmable ROM organized as 131,072 × 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access time: 150 ns (MAX.)


    Original     		PDF LH531000B LH531000B 28-PIN 28-pin, 600-mil 450-mil 28SOP mrom

    LH531000B

    Abstract: No abstract text available
    Text: 531000B CMOS 1M 128K x 8 Mask-Programmable ROM FEATURES DESCRIPTION • 131,072 words × 8 bit organization The 531000B is a mask-programmable ROM organized as 131,072 × 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access time: 150 ns (MAX.)


    Original     		PDF LH531000B LH531000B 28-PIN 28-pin, 600-mil 450-mil 28SOP

    531030

    Abstract: MSM27C1622BZ 02CM 27C131 27c822 27c832
    Text: M ask RO M s 1 Meg 2 Meg 4 Meg I 8 Meg i I I i i 128Kx8 256K x 8 512K x 8 I I 1-Meg x 8 I 2-Meg x 8 I M SM 531020B M SM 531000B M SM 531030B M SM 531021B M S M 5 3 1001B M SM 531031B M SM 532021B M SM 532001B M SM 532031B M S M 5 34 0 21 C M S M 5 34 0 01 C


    OCR Scan     		PDF 128Kx8 531020B 531000B 531030B 531021B 1001B 531031B 532021B 532001B 532031B 531030 MSM27C1622BZ 02CM 27C131 27c822 27c832

    02CM

    Abstract: No abstract text available
    Text: ROMs M a sk RO M s 1-M eg M a s k R O M s Part Number Configuration P ins/Package M SM 531020B 128K x 8 2 8 / DIP | M SM 531000B 128K x 8 2 8 / D IP 100 5.0 V M SM 5 3 1 0 3 0 B 128K x 8 2 8 / D IP 150 3.3 V 5.0 V 1 A ccess Tima M a x ns Voltage 70 5.0 V


    OCR Scan     		PDF 531020B 531000B 531021B 531001B 531031B 532021B 532001B 532031B 532020B 532000B 02CM

    sharp lh53

    Abstract: sharp lh53 1M
    Text: CMOS 1M 128K x 8 Mask-Programmable ROM DESCRIPTION FEATURES • 131,072 x 8 bit organization • Access time: 150 ns (M AX.) • Low power consumption: The 531000B is a mask-programmable ROM organized as 131,072 x 8 bits. It is fabricated using silicon-gate CMOS process technology.


    OCR Scan     		PDF LH531000B 28-pin, 600-m 450-m 44-pin I-------15 600-mil DIP28-P-600) sharp lh53 sharp lh53 1M

    Untitled

    Abstract: No abstract text available
    Text: L H 5 3 1 B - S CMOS 1M 128K x 8 3 V-Prive MROM FEATURES DESCRIPTION • 131,072 words x 8 bit organization The 531000B-S is a mask-programmable ROM organized as 131,072 x 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access time: 500 ns (MAX.)


    OCR Scan     		PDF LH531000B-S 28-pin, 450-mil OP028-P-0450) LH531000BN-S

    531000B

    Abstract: 531000
    Text: CMOS 1 M 128K x 8 MROM FEATURES DESCRIPTION • 131,072 words x 8 bit organization The 531000B is a mask-programmable ROM organized as 131,072 x 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access time: 150 ns (MAX.) • Low power consumption:


    OCR Scan     		PDF 28-pin, 600-mil 450-mil LH531000B 28-PIN 450-rnil LH531000B 531000B 531000

    Untitled

    Abstract: No abstract text available
    Text: L H 5 3 1 B - S CMOS 1M 128K x 8 3 V-Drive MROM FEATURES DESCRIPTION • 131,072 words x 8 bit organization The 531000B-S is a mask-programmable ROM organized as 131,072 x 8 bits. It is fabricated using silicon-gate CMOS process technology. • Power consumption:


    OCR Scan     		PDF LH531000B-S 28-pin, 450-mil 28-PIN I000B OP028-P-0450)

    lh5359

    Abstract: e5bx
    Text: Ffe MASK ROM * ★ • MASK ROMs New product Under development * Features • Product lineup covers 11 capacity ranges from 256 k-bit to 128 M-bit. • Product variations with 3 types o f pinout including JEDEC standard EPROM, Mask ROM specific and Flash memory compatible pinout.


    OCR Scan     		PDF LH-532KXX LH532100BD/BN/BT/BS/BSR/BU 532048D 53V2P00A 532600D 532000B 532000BD LH-532C LH-5326XX lh5359 e5bx

    sharp mask rom

    Abstract: No abstract text available
    Text: CMOS 1 M 128 K x 8 MROM FEATURES DESCRIPTION • 131,072 words x 8 bit organization The 531000B is a m ask-program m able ROM organized as 131,072 x 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access time: 150 ns (MAX.) • Low power consumption:


    OCR Scan     		PDF LH531000B 28-PIN 28-pin, 600-mil 450-mil LH531000B sharp mask rom

    sharp mask rom 44-pin

    Abstract: 1417D lh53
    Text: CMOS 1M 128K x 8 Mask-Programmable ROM FEATURES DESCRIPTION • 131,072 x 8 bit organization The 531000B is a mask-programmable ROM organized as 131,072 x 8 bits. It is fabricated using silicon-gate C M O S process technology. • Access time: 150 ns (MAX.)


    OCR Scan     		PDF 28-pin, 600-mil 450-mil 44-pin, 14x14 44-PIN LH531000B 28-PIN sharp mask rom 44-pin 1417D lh53

    Untitled

    Abstract: No abstract text available
    Text: 531000B-S CMOS 1M 128K x 8 3 V-Drive Mask-Programmable ROM FEATURES DESCRIPTION • 131,072 words x 8 bit organization The 531000B-S is a mask-programmable ROM organized as 131,072 x 8 bits. It is fabricated using silicon-gate CMOS process technology.


    OCR Scan     		PDF LH531000B-S 28-pin, 450-mil LH531000B-S 28-PIN OP028-P-0450)

    Untitled

    Abstract: No abstract text available
    Text: 531000B-S CMOS 1M 128K x 8 3 V-Drive MROM FEATURES DESCRIPTION • 131,072 words x 8 bit organization The 531000B-S is a mask-programmable ROM organized as 131,072 x 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access time: 500 ns (MAX.)


    OCR Scan     		PDF LH531000B-S 28-pin, 450-mil LH531000B-S 28-PIN OP028-P-0450)