Untitled
Abstract: No abstract text available
Text: Panasonic 7nt3.— 0hW&iv?yv y y 7 R - O 5 7 J I / 5 L i m i V x V Aluminium Electrolytic Capacitors/S Surface Mount Type Aluminium Electrolytic Capacitors Japan t t S e rie s :S Type: V « «5¡? mmm Surface mount type • • • ■ • m Features & £
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I000B
Abstract: 41000B-10L 5m41000 41000BP M5M41000
Text: MITSUBISHI LSIs M5M41000BP,J,L,VP,RV-7L,-8L,-10L F A S T PAGE MODE 1 04 8 5 7 6 -B IT 1 0 4 8 5 7 6 -W O R D BY 1-BIT DYNAMIC RAM D ESCRIPTIO N PIN C O N F IG U R A T IO N (TOP VIEW) This is a fa m ily of 1048576-word b y 1-bit d y n a m ic R A M s , fab ricated w ith the high perform ance C M O S process, and
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M5M41000BP
1048576-word
M5M41000BP,
1048S76-BiT
1048S76-W
048576-W
1048576-BIT
I000B
41000B-10L
5m41000
41000BP
M5M41000
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Untitled
Abstract: No abstract text available
Text: Panasonic 5 Î/ Series: Type: Style: Aluminium Electrolytic Capacitors/NHG Aluminium Electrolytic Capacitors Radial Lead Type JU U - 7 NHG A (Radial Leads) 04/JIS C 5141 Japan Standard • 45 f t Features • S ttN H E v U -X '£ 3 0 % ~ 4 0 % /M 2 ft • ^aENFPeB : 105 °C 2000 h
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04/JIS
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Untitled
Abstract: No abstract text available
Text: L H 5 3 1 B - S CMOS 1M 128K x 8 3 V-Drive MROM FEATURES DESCRIPTION • 131,072 words x 8 bit organization The LH531000B-S is a mask-programmable ROM organized as 131,072 x 8 bits. It is fabricated using silicon-gate CMOS process technology. • Power consumption:
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LH531000B-S
28-pin,
450-mil
28-PIN
I000B
OP028-P-0450)
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MCS51 ASSEMBLER
Abstract: MCS-51 assembler intel MCS-51 ap-69 intel Publication number 9800937 MCS48 instruction set 8031 program reader INTEL 8049 IC mcs48 assembly language The Expanded MCS-48 System intel 8751 architecture
Text: 1 AP-69 VSS P 1 .0 C 1 40 ID vcc P1.1 C 2 39 Z3 po.o P 1 .2 C 3 38 I3 P 0 .1 37 □ P0.2 P 1 .3 C 4 P 1 .4 C Z 5 P 1 .5 C 36 3 6 8 9 P3 0 R X D C 10 P 3 .1 /T X D C 11 P 3 .2 /IN T O C 12 P 3 .3 .ÍÑ T ÍC 13 P0.3 35 ID P 0 .4 34 ID P 0 .5 P1.6 CZ 7 P1.7 c
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AP-69
MCS-48â
MCS-51â
AFN-01502A-32
MCS51 ASSEMBLER
MCS-51 assembler
intel MCS-51 ap-69
intel Publication number 9800937
MCS48 instruction set
8031 program reader
INTEL 8049 IC
mcs48 assembly language
The Expanded MCS-48 System
intel 8751 architecture
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Untitled
Abstract: No abstract text available
Text: >i M C -421000B 9 -| 0 4 8 5 7 6 x 9-B IT c m o s d y n a m ic r a m m o d u le w NEC Electronics Inc. PRELIMINARY INFORMATION Description Pin Configurations The MC-421000B9 is a nibble-m ode 1,048,576-word by 9-bit CMOS dynam ic RAM m odule designed to operate
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MC-421000B9
576-word
/PD421001
MC-421000B9
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs MH2M04BJ-7, -8, -10/ MH2M04BJA-7, -8,-10 FAST PAGE MODE 1 0 4 8 5 7 6 -W 0 R D BY 8 -B IT DYNAM IC RAM DESCRIPTION The MH2M04BJ, JA is 1048576 word x 8 bit dynamic RAM and consists of eight industry standard 1M x 1 dy namic RAMs in SOJ. The mounting of SOJ on a single in-line package pro
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MH2M04BJ-7,
MH2M04BJA-7,
MH2M04BJ,
41000B
-10/MH2M04BJA-7
-10/MH2M04BJA-7,
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sharp mask rom 44-pin
Abstract: 1417D lh53
Text: CMOS 1M 128K x 8 Mask-Programmable ROM FEATURES DESCRIPTION • 131,072 x 8 bit organization The LH531000B is a mask-programmable ROM organized as 131,072 x 8 bits. It is fabricated using silicon-gate C M O S process technology. • Access time: 150 ns (MAX.)
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28-pin,
600-mil
450-mil
44-pin,
14x14
44-PIN
LH531000B
28-PIN
sharp mask rom 44-pin
1417D
lh53
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