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    542 TRANSISTOR Search Results

    542 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    542 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Sandisk Flash memory

    Abstract: Sandisk TSOP sandisk flash controller SDTB-64 sandisk flash drive 48 pin controller SDTB-32 SanDisk TSOP 56 socket 14x14 circuit diagram sandisk 64 mb SDFCSTB
    Text: Flash ChipSet Product Manual CORPORATE HEADQUARTERS 140 Caspian Court Sunnyvale, CA 94089-9820 408-542-0500 FAX: 408-542-0503 URL: http://www.sandisk.com SanDisk Corporation general policy does not recommend the use of its products in life support applications where in a


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    BTS542E2

    Abstract: 542D2
    Text: PROFET BTS 542 E2 Smart Highside Power Switch Features Product Summary Overvoltage protection Operating voltage On-state resistance Load current ISO Current limitation • Overload protection · Current limitation · Short-circuit protection · Thermal shutdown


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    PDF O-218AB/5 Q67060-S6951-A2 BTS542E2 542D2

    irf130

    Abstract: No abstract text available
    Text: PD - 90333F IRF130 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6756  HEXFET TRANSISTORS JANTXV2N6756 THRU-HOLE TO-204AA/AE [REF:MIL-PRF-19500/542] 100V, N-CHANNEL Product Summary Part Number IRF130 BVDSS 100V RDS(on) 0.18Ω ID 14A The HEXFETtechnology is the key to International


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    PDF 90333F IRF130 JANTX2N6756 JANTXV2N6756 O-204AA/AE) MIL-PRF-19500/542] irf130

    IRF430

    Abstract: JANTX2N6762 JANTXV2N6762
    Text: PD - 90336F IRF430 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6762  HEXFET TRANSISTORS JANTXV2N6762 THRU-HOLE TO-204AA/AE [REF:MIL-PRF-19500/542] 500V, N-CHANNEL Product Summary Part Number IRF430 BVDSS 500V RDS(on) 1.5 Ω ID 4.5A The HEXFETtechnology is the key to International


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    PDF 90336F IRF430 JANTX2N6762 JANTXV2N6762 O-204AA/AE) MIL-PRF-19500/542] an52-7105 IRF430 JANTX2N6762 JANTXV2N6762

    IRF130

    Abstract: JANTX2N6756 JANTXV2N6756
    Text: PD - 90333F IRF130 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6756  HEXFET TRANSISTORS JANTXV2N6756 THRU-HOLE TO-204AA/AE [REF:MIL-PRF-19500/542] 100V, N-CHANNEL Product Summary Part Number IRF130 BVDSS 100V RDS(on) 0.18Ω ID 14A The HEXFETtechnology is the key to International


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    PDF 90333F IRF130 JANTX2N6756 JANTXV2N6756 O-204AA/AE) MIL-PRF-19500/542] and252-7105 IRF130 JANTX2N6756 JANTXV2N6756

    IRF330

    Abstract: JANTX2N6760 JANTXV2N6760
    Text: PD - 90335F IRF330 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6760  HEXFET TRANSISTORS JANTXV2N6760 THRU-HOLE TO-204AA/AE [REF:MIL-PRF-19500/542] 400V, N-CHANNEL Product Summary Part Number IRF330 BVDSS 400V RDS(on) 1.00Ω ID 5.5A The HEXFETtechnology is the key to International


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    PDF 90335F IRF330 JANTX2N6760 JANTXV2N6760 O-204AA/AE) MIL-PRF-19500/542] an52-7105 IRF330 JANTX2N6760 JANTXV2N6760

    Untitled

    Abstract: No abstract text available
    Text: PD - 90336F IRF430 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6762  HEXFET TRANSISTORS JANTXV2N6762 THRU-HOLE TO-204AA/AE [REF:MIL-PRF-19500/542] 500V, N-CHANNEL Product Summary Part Number IRF430 BVDSS 500V RDS(on) 1.5 Ω ID 4.5A The HEXFETtechnology is the key to International


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    PDF 90336F IRF430 JANTX2N6762 JANTXV2N6762 O-204AA/AE) MIL-PRF-19500/542] p252-7105

    TO-218AB

    Abstract: IST12
    Text: PROFET BTS 542 D2 Smart Highside Power Switch Features Product Summary Overvoltage protection Operating voltage On-state resistance Load current ISO Current limitation • Overload protection · Current limitation · Short-circuit protection · Thermal shutdown


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    PDF O-218AB/5 Q67060-S6950-A2 TO-218AB IST12

    IRF230

    Abstract: JANTX2N6758 JANTXV2N6758
    Text: PD - 90334F IRF230 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6758  HEXFET TRANSISTORS JANTXV2N6758 THRU-HOLE TO-204AA/AE [REF:MIL-PRF-19500/542] 200V, N-CHANNEL Product Summary Part Number IRF230 BVDSS 200V RDS(on) 0.40Ω ID 9.0A  The HEXFET technology is the key to International


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    PDF 90334F IRF230 JANTX2N6758 JANTXV2N6758 O-204AA/AE) MIL-PRF-19500/542] paralleli252-7105 IRF230 JANTX2N6758 JANTXV2N6758

    Untitled

    Abstract: No abstract text available
    Text: PD - 90334F IRF230 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6758  HEXFET TRANSISTORS JANTXV2N6758 THRU-HOLE TO-204AA/AE [REF:MIL-PRF-19500/542] 200V, N-CHANNEL Product Summary Part Number IRF230 BVDSS 200V RDS(on) 0.40Ω ID 9.0A  The HEXFET technology is the key to International


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    PDF 90334F IRF230 JANTX2N6758 JANTXV2N6758 O-204AA/AE) MIL-PRF-19500/542]

    Untitled

    Abstract: No abstract text available
    Text: PD - 90335F IRF330 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6760  HEXFET TRANSISTORS JANTXV2N6760 THRU-HOLE TO-204AA/AE [REF:MIL-PRF-19500/542] 400V, N-CHANNEL Product Summary Part Number IRF330 BVDSS 400V RDS(on) 1.00Ω ID 5.5A The HEXFETtechnology is the key to International


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    PDF 90335F IRF330 JANTX2N6760 JANTXV2N6760 O-204AA/AE) MIL-PRF-19500/542] p252-7105

    LT1895-46-0125

    Abstract: No abstract text available
    Text: 5TH FL,NO.542-5,CHUNG CHENG ROAD, HSIN-TIEN CITY,TAIWAN. LEDTECH ELECTRONICS CORP. TEL:886-2-222186891 FAX:886-2-22181222,22182894 Http://www.ledtech.com.tw SPECIFICATION PART NO. : LT1895-46-0125 5.0mm ROUND PHOTOTRANSISTOR Approved by Checked by Prepared by


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    PDF LT1895-46-0125 LT1895-46-0125

    LT0395-46-0125

    Abstract: LT039
    Text: 5TH FL,NO.542-5,CHUNG CHENG ROAD, HSIN-TIEN CITY,TAIWAN. LEDTECH ELECTRONICS CORP. TEL:886-2-222186891 FAX:886-2-22181222,22182894 Http://www.ledtech.com.tw SPECIFICATION PART NO. : LT0395-46-0125 3.0mm ROUND PHOTOTRANSISTOR Approved by Checked by Prepared by


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    PDF LT0395-46-0125 LT0395-46-0125 LT039

    333E

    Abstract: IRF130 JANTX2N6756 JANTXV2N6756
    Text: Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.333E HEXFET JANTX2N6756 POWER MOSFET JANTXV2N6756 [REF:MIL-PRF-19500/542] [GENERIC:IRF130] N-CHANNEL Ω HEXFET 100 Volt, 0.18Ω Product Summary HEXFET technology is the key to International


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    PDF JANTX2N6756 JANTXV2N6756 MIL-PRF-19500/542] IRF130] 333E IRF130 JANTX2N6756 JANTXV2N6756

    DD 127 D TRANSISTOR

    Abstract: transistor DD 127 D 2N6758 JANTXV 2N6758 2N6762 JANTX 2N6762 2N6760 JANTX 121465 2n6760
    Text: 2N6756, 2N6758, 2N6760 and 2N6762 Qualified Levels: JAN, JANTX, and JANTXV N-CHANNEL MOSFET Available on commercial versions Qualified per MIL-PRF-19500/542 DESCRIPTION This family of 2N6756, 2N6758, 2N6760 and 2N6762 switching transistors are military qualified up to the JANTXV level for high-reliability applications. Microsemi also offers


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    PDF 2N6756, 2N6758, 2N6760 2N6762 MIL-PRF-19500/542 2N6762 DD 127 D TRANSISTOR transistor DD 127 D 2N6758 JANTXV 2N6758 2N6762 JANTX 2N6760 JANTX 121465

    JANTX2N6762

    Abstract: IRF430 JANTX2N6768 JANTXV2N6762 JANTXV2N6768
    Text: Provisional Data Sheet No. PD-9.336E HEXFET JANTX2N6762 POWER MOSFET JANTXV2N6762 [REF:MIL-PRF-19500/542] [GENERIC:IRF430] N-CHANNEL Ω HEXFET 500 Volt, 1.5Ω Product Summary HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry achieves very low on-state resistance


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    PDF JANTX2N6762 JANTXV2N6762 MIL-PRF-19500/542] IRF430] JANTX2N6762 IRF430 JANTX2N6768 JANTXV2N6762 JANTXV2N6768

    9335e

    Abstract: source 5A simple IRF330 JANTX2N6760 JANTXV2N6760
    Text: Provisional Data Sheet No. PD-9.335E HEXFET JANTX2N6760 POWER MOSFET JANTXV2N6760 [REF:MIL-PRF-19500/542] [GENERIC:IRF330] N-CHANNEL Ω HEXFET 400 Volt, 1.00Ω Product Summary HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry achieves very low on-state resistance


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    PDF JANTX2N6760 JANTXV2N6760 MIL-PRF-19500/542] IRF330] 9335e source 5A simple IRF330 JANTX2N6760 JANTXV2N6760

    IRF330

    Abstract: JANTX2N6760 JANTXV2N6760 9335E
    Text: Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.335E HEXFET JANTX2N6760 POWER MOSFET JANTXV2N6760 [REF:MIL-PRF-19500/542] [GENERIC:IRF330] N-CHANNEL Ω HEXFET 400 Volt, 1.00Ω Product Summary HEXFET technology is the key to International Rectifier’s


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    PDF JANTX2N6760 JANTXV2N6760 MIL-PRF-19500/542] IRF330] IRF330 JANTX2N6760 JANTXV2N6760 9335E

    ITT 1f2 DIODE

    Abstract: Zener diode 5.6 itt BTS542D BAz50
    Text: SIEMENS BTS 542 E PROFET • • • • • High-side switch Short-circuit protection Overtemperature protection Overload protection Load dump protection • Undervoltage and overvoltage shutdown with auto-restart and hysteresis • Reverse battery protection


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    PDF T0218AB/5 200ns C67078-S5400-A4 ITT 1f2 DIODE Zener diode 5.6 itt BTS542D BAz50

    BTS 177

    Abstract: BTS 304
    Text: SIEMENS BTS 542 D PRÜFET • High-side switch • Short-circuit protection • Overtemperature protection • Overload protection • Load dump protection • Undervoltage and overvoltage shutdown with auto-restart and hysteresis • Reverse battery protection


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    PDF T0218AB/5 a235bQ5 200ns fl235bDS D05463G BTS 177 BTS 304

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BTS 542 D PROFET • • • • • High-side switch Short-circuit protection Overtemperature protection Overload protection Load dump protection • Undervoltage and overvoltage shutdown with auto-restart and hysteresis • Reverse battery protection


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    PDF T0218AB/5 C67078-S5400-A3

    BTS 433

    Abstract: fet wn 428 TRANSISTOR K 135 J 50 1S70 1S71 BTS 430 E2
    Text: • ñ23Sb05 D0fllSb2 4 Tfl SIEMENS PROFET BTS 542 E2 Smart Highside Power Switch Product Summary Overvoltage protection Operating voltage On-state resistance Load current ISO Current limitation Features • Overload protection • Current limitation • Short-circuit protection


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    PDF fl235b05 O-218AB/5 E3Sb05 Q67060-S6951-A2 BTS 433 fet wn 428 TRANSISTOR K 135 J 50 1S70 1S71 BTS 430 E2

    Zener diode 5.6 itt

    Abstract: BTS542E 235L D054 BTS 542D
    Text: SIEMENS BTS 542 E PROFET • • • • • High-side switch Short-circuit protection Overtemperature protection Overload protection Load dump protection • • • • • • • • Undervoltage and overvoltage shutdown with auto-restart and hysteresis


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    PDF T0218AB/5 200jis BB35bQS 0054fi42 fl235bOS C67078-S5400-A4 23SLGS DG54flM4 Zener diode 5.6 itt BTS542E 235L D054 BTS 542D

    Untitled

    Abstract: No abstract text available
    Text: Jp j-0 rnational Provisional Data Sheet No. PD-9.336E I O R Rectifier JANTX2N6762 HEXFET POWER MOSFET JANTXV2N6762 [REF:MIL-PRF-19500/542] [GENERIC:IRF430] N- CHA NNE L 500 Volt, 1.50 HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.The effi­


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    PDF JANTX2N6762 JANTXV2N6762 MIL-PRF-19500/542] IRF430] 554S5