54260
Abstract: 5L426 4260B/BSL-70
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM54260B MCM5L4260B MCM5S4260B Advance Information 256K x 16 CMOS Dynamic RAM Fast Page Mode - 2 CAS, 1 Write Enable The MCM54260B is a 0.6n CMOS high-speed dynamic random access memory. It is organized as 262,144 sixteen-bit words and fabricated with CMOS siiicon-gate
|
OCR Scan
|
PDF
|
MCM54260B
54260BJ70
54260BJ80
54260BJ10
54260BT70
54260BT80
54260BT10
54260BJ70R
54260BJ80R
54260
5L426
4260B/BSL-70
|
tdq-4d
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM54260B MCM5L4260B MCM5S4260B Advance Information 256K x 16 CM O S Dynamic RAM Fast Page Mode - 2 CAS, 1 Write Enable The M CM 54260B is a 0.6n C M O S high-speed dynamic random acce ss memory. It is organized as 262,144 sixteen-bit words and fabricated with C M O S silicon-gate
|
OCR Scan
|
PDF
|
54260B
MCM54260BJ70
MCM54260BJ80
MCM54260BJ10
MCM54260BT70
MCM54260BT80
54260BT10
54260BJ70R
54260BJ80R
tdq-4d
|
MCM54260BT70
Abstract: No abstract text available
Text: M OTOROLA SEMICONDUCTOR TECHNICAL DATA MCM54260B MCM5L4260B MCM5V4260B Product Preview 256K x 16 CMOS Dynamic RAM Fast Page Mode - 2 CAS, 1 Write Enable T h e M C M 5 4 2 6 0 B is a 0 .6 |i C M O S h ig h -s p e e d d y n a m ic ra n d o m a c c e s s m e m o ry .
|
OCR Scan
|
PDF
|
MCM54260B
MCM5L4260B
MCM5V4260B
54260BJ70
54260BJ80
54260BJ10
54260BT70
54260BT80
54260BT10
54260BJ70R
MCM54260BT70
|