TC551632J-25

Abstract: TC551632
Contextual Info: 51632J —20. TC 551632J—25. TC 32,768 W O R D x 16 BIT CMOS STATIC RAM PRELIMINARY DESCRIPTION The 551632J is a 524,288 bits high speed static random access memory organized as 32,768 words by 16 bits using CMOS technology, and operated from a single 5-volt supply.

TA8172AF

Abstract: TB 1226 BN TA8859P mg75n2ys40 t6961A TA8242AK ta8644n 7378P ta8310 7628P
Contextual Info: Index of Type Number Type Number 015Z10 015Z11 015Z12 015Z2.0 015Z2.0-12 015Z2.2 015Z2.4 015Z2.7 015Z3.0 015Z3.3 015Z3.6 015Z3.9 015Z4.3 015Z4.7 015Z5.1 015Z5.6 015Z6.2 015Z6.8 015Z7.5 015Z8.2 015Z9.1 02CZ10 02CZ11 0 2 C Z 12 0 2 C Z 13 0 2 C Z 15 0 2 C Z 16

T8E6

Abstract: TC551632 TC551632J acc20
Contextual Info: TOSHIBA T C 5 5 1 6 3 2 .1 -2 0 / 2 5 / 3 5 SILICON GATE CMOS 32,768 WORD x 16 BIT CMOS STATIC RAM Description The 551632J is a 524,288 bit high speed CMOS static random access memory organized as 32,768 words by 16 bits and operated from a single 5V supply. Toshiba's advanced CMOS technology and circuit design enable high speed operation.

Contextual Info: 32,768 WORD x 16 BIT CMOS STATIC RAM DESCRIPTION PRELIMINARY The 551632J is a 524,288 bits high speed static random access m emory organized as 32,768 words by 16 b its u sing CMOS technology, and operated from a single 5-volt supply. T oshiba's CMOS technology and advanced circuit form provide high speed feature.