TC551632J-25

Abstract: TC551632
Contextual Info: 51632J —20. TC 551632J—25. TC 32,768 W O R D x 16 BIT CMOS STATIC RAM PRELIMINARY DESCRIPTION The TC551632J is a 524,288 bits high speed static random access memory organized as 32,768 words by 16 bits using CMOS technology, and operated from a single 5-volt supply.

T8E6

Abstract: TC551632 TC551632J acc20
Contextual Info: TOSHIBA T C 5 5 1 6 3 2 .1 -2 0 / 2 5 / 3 5 SILICON GATE CMOS 32,768 WORD x 16 BIT CMOS STATIC RAM Description The TC551632J is a 524,288 bit high speed CMOS static random access memory organized as 32,768 words by 16 bits and operated from a single 5V supply. Toshiba's advanced CMOS technology and circuit design enable high speed operation.

TC55B4257

Abstract: TC551664J-20
Contextual Info: X6 Capacity 288KBit Type No. Organization 15 15 TC55329AP/AJ-20 20 20 TC55329AP/AJ-25 25 25 TC56329AP/AJ-35 32,768 x 9 35 35 TC55B329P/J-10 10 10 TC55B329P/J-12 12 12 TC55B329P/J-15 15 15 20 20 25 25 TC551632J-36 35 35 TC5SB4256J-12 12 12 TC55B4256J-15 15

Contextual Info: TOSHIBA TC551632J-20/25/35 SILICON GATE CMOS 32,768 WORD x 16 BIT CMOS STATIC RAM Description The TC551632J is a 524,288 bit high speed CMOS static random access memory organized as 32,768 words by 16 bits and operated from a single 5V supply. Toshiba's advanced CMOS technology and circuit design enable high speed operation.

Contextual Info: 32,768 WORD x 16 BIT CMOS STATIC RAM DESCRIPTION PRELIMINARY The TC551632J is a 524,288 bits high speed static random access m emory organized as 32,768 words by 16 b its u sing CMOS technology, and operated from a single 5-volt supply. T oshiba's CMOS technology and advanced circuit form provide high speed feature.