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    557C TRANSISTOR Search Results

    557C TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    2SA1213 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-2 A / hFE=70~240 / VCE(sat)=-0.5 V / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TPCP8515 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8 Visit Toshiba Electronic Devices & Storage Corporation

    557C TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    transistors BC 557C

    Abstract: transistors BC 558c 556B transistor BC 557B ic 556 datasheet 559C transistors bc 557b ic 556 558B equivalent bc 558b
    Text: BC 556 . BC 559 PNP General Purpose Transistors Si-Epitaxial PlanarTransistors PNP Power dissipation – Verlustleistung 500 mW Plastic case Kunststoffgehäuse TO-92 10D3 Weight approx. – Gewicht ca. 0.18 g Plastic material has UL classification 94V-0


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    UL94V-0 transistors BC 557C transistors BC 558c 556B transistor BC 557B ic 556 datasheet 559C transistors bc 557b ic 556 558B equivalent bc 558b PDF

    transistors BC 557C

    Abstract: No abstract text available
    Text: BC 556 . BC 559 PNP Silicon Epitaxial PlanarTransistors PNP Power dissipation – Verlustleistung 500 mW Plastic case Kunststoffgehäuse TO-92 10D3 Weight approx. – Gewicht ca. 0.18 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert


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    UL94V-0 transistors BC 557C PDF

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    Abstract: No abstract text available
    Text: BC 556 . BC 559 PNP Silicon Epitaxial PlanarTransistors PNP Power dissipation – Verlustleistung 500 mW Plastic case Kunststoffgehäuse TO-92 10D3 Weight approx. – Gewicht ca. 0.18 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert


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    UL94V-0 tter\Transistoren\bc556 PDF

    bcm 4330

    Abstract: telemecanique contactor catalogue A5 GNC mosfet philips ecg master replacement guide Elektronikon II keltron electrolytic capacitors PART NO SELEMA DRIVER MOTOR AC 12v dc EIM Basic MK3 lenze 8600 Atlas copco rc universal 60 min
    Text: NEED IT NOW? BUY REMAN! SEE PAGE lxx xx xvi SOLUTIONS, SOLUTIONS. Q A r e q u a l i t y, c o s t , a n d t i m e i m p o r t a n t to you? A ELECTRICAL SOUTH! Q Do you spend too much of your valuable time dealing with too m a n y d i ff e r e n t r e p a i r v e n d o r s ?


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    MEM5640

    Abstract: mem637 MEM617 MEM660 3N138 3N159 3N140 564C mem 571c 443n
    Text: MOS TRANSISTORS TRANSISTORS MOS MOS TRANSISTOREN N-CHANNEL DEPLETION MODE MOSFETS Part No. NIEM MEM * MEM * MEM * MEM *M E M *M E M 557 557C 564C 571C 614 616 617 Structure Power 25 »C Amb V br g2S V(sr) gis5 mW Volts Volts Max Max Max V g s (o ff) V(br) dS5


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    C557B

    Abstract: C558 transistor C556B c 557 b transistors BC 557C transistor BC 557B transistor C558 c558c BC 557 PNP TRANSISTOR circuits BC557C
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA A m plifier Transistors BC556,B BC557,A,B,C BC558B PNP Silicon M AXIMUM RATINGS Symbol BC556 BC557 BC558 Collector-E m itter Voltage VCEO -6 5 -4 5 -3 0 Vdc C o llecto r-B ase Voltage v CB O -6 0 -5 0 -3 0 Vdc E m itte r-B a s e Voltage


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    BC556 BC557 BC558B BC556 BC557 BC558 C557B C558 transistor C556B c 557 b transistors BC 557C transistor BC 557B transistor C558 c558c BC 557 PNP TRANSISTOR circuits BC557C PDF

    JC556

    Abstract: JC556A JC556B JC557 JC557A JC557B JC557C JC558 JC558A
    Text: m bbSB^ai DD27TB1 bIT * A P X N AUER PHILIPS/DISCRETE JC556 to 558 b*îE P SILICON PLANAR EPITAXIAL TRANSISTORS General purpose pnp transistors in plastic TO-92 envelopes, especially suitable for use in driver stages of audio amplifiers. Q U IC K R E F E R E N C E D A T A


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    DD27TB1 JC556 JC557 JC558 200Tiaa JC556A JC556B JC556B JC557A JC557B JC557C JC558 JC558A PDF

    bc558c

    Abstract: transistors BC 557C philips BC557B bc557b BC557C BC558 driver BC558B PHILIPS BC556-BC558 BC556A BC557A
    Text: BC556 to 558 PHILIPS international SbE D • 7110fl2b QOMSOab 452 ■ P H I N T-Zl'Z-l SILICON PLANAR EPITAXIAL TRANSISTORS General purpose p-n-p transistors in plastic TO-92 envelopes, especially suitable for use in driver stages of audio amplifiers. QUICK REFEREN C E DATA


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    BC556 711002b BC557 BC558 BC557C BC558C^ BC557AV bc558c transistors BC 557C philips BC557B bc557b BC558 driver BC558B PHILIPS BC556-BC558 BC556A BC557A PDF

    C556

    Abstract: C558 C557B c557a Philips C558 C556B c558 PNP transistors BC 557C bc557 and application BC557
    Text: DISCRETE SEMICONDUCTORS BC556; BC557; BC558 PNP general purpose transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors 1997 Mar 27 PHILIPS Philips Semiconductors Product specification


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    BC556; BC557; BC558 BC546, BC548. BC557 C556 C558 C557B c557a Philips C558 C556B c558 PNP transistors BC 557C bc557 and application PDF

    mem637

    Abstract: mem616 tetrode 3N159 MEM5640 MEM563C MEM617 GP 617 DIODE 3n187 MEM680
    Text: DUAL P-CHANNEL ENHANCEMENT MODE MOSFETS Part No. *M E M 550 *M E M 550C MEM 551 MEM 551C #*M E M 954 •M E M 9 5 4 A *M E M 954B # MEM 955 MEM 955A MEM 955B 2N 3609 2N 4066 2N 4067 3N 147 3N 148 *3N 151 *3N 165 *3N 166 *3N 188 *3N 189 3N 190 3N 191 MEM 517C2M


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    Untitled

    Abstract: No abstract text available
    Text: ANALOG DEVICES 24-Bit X - A ADC PRELIMINARY TECHNICAL DATA FEATURES: A D 1555 4th Order 2 -A M o d ulato r Large Dynam ic Range: 118 dB m in, 121 dB typical @ 1 ms 118 dB typical @ 0.5 ms Low Distortion: -116 dB m ax, -120 dB typical Sam pling Rate a t 256 kSPS


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    24-Bit 56nVrm AD1555/AD1556 1555/AD PDF

    ay-5-8100

    Abstract: AY5-8100 ay-3-8112 AY-3-8760 AY-3-8710 AY-3-8500 AY-3-8700-1 AY-5-8102 ay-3-0214 saa1024
    Text: IL EiJ ¡MICRO ELECTRONICS 1978 DATA CATALOG GENERAL IN S T R U M E N T C O R P O R A T IO N • M IC R O E L E C T R O N IC S SS.00 I"HIL I r'i E- Index e l e c t r o n ic s I I M icroprocessor • I RAMs ■ EAROMs ■ ROMs Keyboard Encoders/Character Generators


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    transistors BC 557C

    Abstract: BF366 SMD code 307C F199 transistor 2N5793 BC413 motorola ZENER diode marking code z7 equivalent of transistor bc212 bc 214 bc107c motorola 2n555
    Text: S e le c to r G u id e s 1 M e ta l-C a n T ra n s is to rs 3 F ie ld -E ffe c t T ra n s is to rs 4 S m a ll-S ig n a l T u n in g , S w itc h in g and Z e n e r D io d e s 5 T a p e a n d R eel S p e c ific a tio n s P a ck ag e O u tlin e D im e n s io n s and


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