55N50 Search Results

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R5F61655N50FPV		Renesas Electronics Corporation	Microcontrollers with 32-bit CISC CPU for System Control Applications (Non Promotion), LQFP, /

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IXYS Corporation IXFL55N50 MOSFET N-CH 500V 55A ISOPLUS264
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFL55N50	Tube			25	1 - 10 - 100 $14.8932 1000 $14.8932 10000 $14.8932	Buy Now
Mouser Electronics	IXFL55N50					1 - 10 - 100 - 1000 - 10000 -	Get Quote
Littelfuse Inc IXFN55N50 MOSFET N-CH 500V 55A SOT-227B
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFN55N50	Tube			10	1 - 10 $21.163 100 $21.163 1000 $21.163 10000 $21.163	Buy Now
RS	IXFN55N50	Bulk		8 Weeks	10	1 - 10 $45.68 100 $45.68 1000 $45.68 10000 $45.68	Get Quote
IXYS Corporation IXFR55N50 MOSFET N-CH 500V 48A ISOPLUS247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFR55N50	Tube			30	1 - 10 - 100 $14.78733 1000 $14.78733 10000 $14.78733	Buy Now
Mouser Electronics	IXFR55N50					1 - 10 - 100 - 1000 - 10000 -	Get Quote
IXYS Corporation IXFG55N50 MOSFET N-CH 500V 48A ISO264
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFG55N50	Tube			25	1 - 10 - 100 $14.8932 1000 $14.8932 10000 $14.8932	Buy Now
Mouser Electronics	IXFG55N50					1 - 10 - 100 - 1000 - 10000 -	Get Quote
IXYS Corporation IXFK55N50 MOSFET N-CH 500V 55A TO264AA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFK55N50	Tube			25	1 - 10 - 100 $14.2308 1000 $14.2308 10000 $14.2308	Buy Now
Mouser Electronics	IXFK55N50					1 - 10 - 100 - 1000 - 10000 -	Get Quote
Bristol Electronics	IXFK55N50		7			1 - 10 - 100 - 1000 - 10000 -	Get Quote

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55N50 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
50n50 Abstract: 55N50 150N50 IXFK55N50 Text: VDSS HiPerFETTM Power MOSFETs ISOPLUS247TM IXFR 50N50 IXFR 55N50 Electrically Isolated Back Surface ID25 RDS(on) Ω 100 mΩ Ω 90 mΩ 500 V 43 A 500 V 48 A trr ≤ 250 ns Single Die MOSFET Maximum Ratings ISOPLUS 247TM Symbol Test Conditions VDSS VDGR	Original	PDF	ISOPLUS247TM 50N50 55N50 247TM IXFK55N50 50N50 55N50 150N50
Untitled Abstract: No abstract text available Text: HiPerFETTM Power MOSFET IXFK 55N50 IXFX 55N50 IXFN 55N50 VDSS ID25 RDS on t rr Single Die MOSFET Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C 500 500 V V VGSS VGSM Continuous Transient ±20 ±30 V V ID25 IDM TC = 25°C	Original	PDF	55N50 PLUS247 O-264 IXFX55N50 IXFN55N50 125OC IXFK55N50/IXFX55N50
IXFG 55N50 Abstract: ISO264 ISO264TM IXFK55N50 55N50 Text: HiPerFETTM Power MOSFETs IXFG 55N50 ISOPLUS247TM Electrically Isolated Back Surface VDSS ID25 RDS(on) = 500 V = 48 A = 90 mΩ Single Die MOSFET Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 500	Original	PDF	55N50 ISOPLUS247TM ISO264TM ISO264 IXFK55N50 728B1 123B1 728B1 065B1 IXFG 55N50 ISO264TM 55N50
Untitled Abstract: No abstract text available Text: VDSS HiPerFETTM Power MOSFETs ISOPLUS247TM IXFR 50N50 IXFR 55N50 Electrically Isolated Back Surface ID25 RDS(on) Ω 100 mΩ Ω 90 mΩ 500 V 43 A 500 V 48 A trr ≤ 250 ns Single Die MOSFET Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C	Original	PDF	ISOPLUS247TM 50N50 55N50 IXFK55N50 50N50 55N50 728B1
125OC Abstract: 55N50F Text: HiPerRFTM Power MOSFETs IXFN 55N50F VDSS ID25 F-Class: MegaHertz Switching RDS on D N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ	Original	PDF	55N50F OT-227 E153432 125OC 728B1 125OC 55N50F
ixys ixfn 55n50 Abstract: 50n50 IXFK50N50 IXFN50N50 IXFK55N50 IXFN55N50 Text: HiPerFETTM Power MOSFET IXFN IXFN IXFK IXFK Single Die MOSFET 55N50 50N50 55N50 50N50 VDSS ID25 RDS on 500V 500V 500V 500V 55A 50A 55A 50A 80mΩ 100mΩ 80mΩ 100mΩ trr 250ns 250ns 250ns 250ns Preliminary data sheet Symbol Test Conditions TO-264 AA (IXFK)	Original	PDF	55N50 50N50 250ns O-264 ixys ixfn 55n50 50n50 IXFK50N50 IXFN50N50 IXFK55N50 IXFN55N50
50n50 Abstract: No abstract text available Text: HiPerFETTM Power MOSFETs ISOPLUS247TM VDSS IXFR 50N50 IXFR 55N50 Electrically Isolated Back Surface ID25 500 V 43 A 500 V 48 A trr £ 250 ns RDS(on) 100 mW 80 mW Single MOSFET Die Preliminary data Symbol Test Conditions VDSS VDGR T J = 25°C to 150°C T J = 25°C to 150°C; RGS = 1 MW	Original	PDF	ISOPLUS247TM 50N50 55N50 55N50 247TM
55n50f Abstract: No abstract text available Text: HiPerRFTM Power MOSFETs IXFX 55N50F IXFK 55N50F VDSS = 500 V ID25 = 55 A Ω RDS on = 85 mΩ F-Class: MegaHertz Switching trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr PLUS 247TM (IXFX) Symbol Test Conditions	Original	PDF	55N50F 55N50F 247TM 125OC 728B1
Untitled Abstract: No abstract text available Text: HiPerFETTM Power MOSFETs IXFG 55N50 ISOPLUS247TM Electrically Isolated Back Surface VDSS ID25 RDS(on) = 500 V = 48 A = 90 mΩ Single Die MOSFET Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 500	Original	PDF	55N50 ISOPLUS247TM ISO264 IXFK55N50 728B1 123B1 728B1 065B1
Untitled Abstract: No abstract text available Text: HiPerFETTM Power MOSFET VDSS IXFE 55N50 IXFE 50N50 Single Die MOSFET ID25 RDS on Ω 90 mΩ Ω 100 mΩ 500 V 50 A 500 V 47 A trr ≤ 250 ns Preliminary data sheet ISOPLUS 227TM (IXFE) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C	Original	PDF	55N50 50N50 227TM IXFN55N50 IXFE55N50:
ixys ixfn 55n50 Abstract: ixys ixfn55n50 IXFK50N50 Text: HiPerFETTM Power MOSFET IXFN 55N50 IXFN 50N50 IXFK 55N50 IXFK 50N50 Single MOSFET Die VDSS I D25 RDS on t rr 500V 500V 500V 500V 55A 80mW 250ns 50A 100mW 250ns 55A 80mW 250ns 50A 100mW 250ns Preliminary data sheet Symbol Test Conditions TO-264 AA (IXFK) Maximum Ratings	Original	PDF	55N50 50N50 50N50 250ns 100mW ixys ixfn 55n50 ixys ixfn55n50 IXFK50N50
MD 202 Abstract: IXFX55N50 IXFK55N50 SOT-227B Outline IXFN55N50 55N50 "SOT-227 B" dimensions PLUS247 55n5 Text: IXFK 55N50 IXFX 55N50 IXFN 55N50 HiPerFETTM Power MOSFET VDSS ID25 RDS on t rr Single Die MOSFET Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C 500 500 V V VGSS VGSM Continuous Transient ±20 ±30 V V ID25 IDM TC = 25°C	Original	PDF	55N50 PLUS247 O-264 IXFX55N50 IXFN55N50 125OC IXFK55N50/IXFX55N50 MD 202 IXFX55N50 IXFK55N50 SOT-227B Outline IXFN55N50 55N50 "SOT-227 B" dimensions 55n5
fast IXFX Abstract: ixf55n50 50N50 IXFX55N50 125OC PLUS247TM 55N50 Text: HiPerFETTM Power MOSFETs VDSS ID25 RDS on 500 V 50 A 100 mΩ Ω Ω 500 V 55 A 80 mΩ trr ≤ 250 ns IXFX 50N50 IXFX 55N50 Single Die MOSFET Preliminary data sheet Symbol Test Conditions Maximum Ratings V DSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ	Original	PDF	50N50 55N50 247TM 125OC fast IXFX ixf55n50 50N50 IXFX55N50 125OC PLUS247TM 55N50
55n50f Abstract: 125OC Text: HiPerRF TM Power MOSFETs IXFX 55N50F IXFK 55N50F VDSS = 500 V ID25 = 55 A Ω RDS on = 85 mΩ F-Class: MegaHertz Switching trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr PLUS 247TM (IXFX) Symbol Test Conditions	Original	PDF	55N50F 247TM 728B1 55n50f 125OC

50N50 Abstract: IXFE50N50 IXFE55N50 IXFN55N50 Text: HiPerFETTM Power MOSFET VDSS IXFE 55N50 IXFE 50N50 Single Die MOSFET ID25 RDS on Ω 80 mΩ Ω 100 mΩ 500 V 52 A 500 V 47 A trr ≤ 250 ns Preliminary data sheet ISOPLUS 227TM (IXFE) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C	Original	PDF	55N50 50N50 227TM 3000VSD IXFN55N50 IXFE55N50: 50N50 IXFE50N50 IXFE55N50
55n50f Abstract: No abstract text available Text: Advance Technical Information HiPerRFTM Power MOSFETs IXFX 55N50F IXFK 55N50F VDSS = 500 V ID25 = 55 A Ω RDS on = 85 mΩ F-Class: MegaHertz Switching trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr	Original	PDF	55N50F 247TM 55n50f
Untitled Abstract: No abstract text available Text: HiPerFETTM Power MOSFETs ISOPLUS247TM VDSS IXFR 50N50 IXFR 55N50 Electrically Isolated Back Surface ID25 500 V 43 A 500 V 48 A trr £ 250 ns RDS(on) 100 mW 80 mW Single MOSFET Die Preliminary data Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW	Original	PDF	ISOPLUS247TM 50N50 55N50 55N50 247TM
55n50 Abstract: ixys ixfn 55n50 IXFK50N50 Text: HiPerFETTM Power MOSFET IXFN 55N50 IXFN 50N50 IXFK 55N50 IXFK 50N50 Single MOSFET Die VDSS I D25 RDS on t rr 500V 500V 500V 500V 55A 80mW 250ns 50A 100mW 250ns 55A 80mW 250ns 50A 100mW 250ns Preliminary data sheet Symbol Test Conditions TO-264 AA (IXFK) Maximum Ratings	Original	PDF	55N50 50N50 50N50 250ns 100mW ixys ixfn 55n50 IXFK50N50
isoplus Abstract: transistor tl 187 780 AC 55N50F Text: HiPerRFTM Power MOSFETs IXFR 55N50F F-Class: MegaHertz Switching trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ	Original	PDF	55N50F 247TM E153432 405B2 isoplus transistor tl 187 780 AC 55N50F
50n50 Abstract: No abstract text available Text: HiPerFET Power MOSFETs VDSS IXFX50N50 IXFX 55N50 D ^D25 DS on 500 V 50 A 100 mQ 500 V 55 A 80 mQ trr <250 ns Single MOSFET Die Preliminary data sheet Symbol Test Conditions V Tj =25°Cto150°C Tj = 25° C to 150° C; RQS= 1 M il 500 500 V V Continuous	OCR Scan	PDF	Cto150 IXFX50N50 55N50 50N50 55N50 PLUS247TM
Untitled Abstract: No abstract text available Text: Preliminary Data Sheet D V DSS HiPerFET Power MOSFET IXFN IXFN IXFK IXFK Single MOSFET Die 55N50 50N50 55N50 50N50 500V 500V 500V 500V K DS on ^D25 55A 50A 55A 50A 85m Q 100m£2 85m£2 100m£2 250ns 250ns 250ns 250ns TO-264 AA (IXFK) Symbol Maximum Ratings	OCR Scan	PDF	250ns 250ns 55N50 50N50 50N50 O-264
50n50 Abstract: No abstract text available Text: aixYS Advanced Technical Information v HiPerFET Power MOSFETs ISOPLUS247™ IXFR 50N50 IXFR 55N50 Electrically Isolated Back Surface DSS p ^D25 500 V 43 A 500 V 48 A trr <250 ns DS(on) 100 mi] 80 m£2 Single MOSFET Die Symbol Test Conditions Maximum Ratings	OCR Scan	PDF	ISOPLUS247TM 50N50 55N50 Cto150 55N50
50n50 Abstract: IXFK55N50 ISOPLUS247 55n50 Text: Advanced Technical Information □ IX Y S V DSS HiPerFET Power MOSFETs ISOPLUS247™ IXFR 50N50 IXFR 55N50 Electrically Isolated Back Surface D ^D25 500 V 43 A 500 V 48 A t rr < 250 ns DS(on) 100 mQ 80 mQ Single MOSFET Die Symbol TestConditions v Tj = 25°C to 150°C	OCR Scan	PDF	ISOPLUS247â 50N50 55N50 55N50 IXFK55N50 ISOPLUS247
IXFN40N50 Abstract: No abstract text available Text: DIXYS IXFN 55N50 IXFN 50N50 IXFK 55N50 IXFK 50N50 Single MOSFET Die rr Test Conditions Maximum Ratings IXFK IXFN IXFN 50 55 50 IXFK 55 Td = 25°C to 150°C T j = 25°C to 150°C 500 500 500 500 V V VGS v GSM Continuous Transient ±20 ¿30 ±20 ±30 V V »D25	OCR Scan	PDF	IXFN55N50 IXFN50N50 IXFK55N50 IXFK50N50 O-264 OT-227 IXFK55N50 IXFN55N50 BffW80N50 IXFN40N50

55N50 Search Results

55N50 Result Highlights (1)

55N50 Price and Stock

IXYS Corporation IXFL55N50

Littelfuse Inc IXFN55N50

IXYS Corporation IXFR55N50

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IXYS Corporation IXFK55N50

55N50 Datasheets Context Search

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