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    IXFX55N50 Price and Stock

    IXYS Corporation IXFX55N50

    MOSFET N-CH 500V 55A PLUS247-3
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    IXYS Corporation IXFX55N50F

    MOSFET N-CH 500V 55A PLUS247-3
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    IXFX55N50 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXFX55N50 IXYS 500V HiPerFET power MOSFET Original PDF
    IXFX55N50F IXYS 500V HiPerRF power MOSFET Original PDF
    IXFX55N50F IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 55A PLUS247 Original PDF

    IXFX55N50 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IXFX55N50F

    Abstract: IXFK55N50F ixfn*55N50F 55N50F IXFN55N50F PLUS247
    Text: Advance Technical Information IXFK55N50F IXFX55N50F HiPerRFTM Power MOSFETs VDSS ID25 = = 500V 55A Ω 85mΩ 250ns RDS on ≤ ≤ trr F-Class: MegaHertz Switching N-Channel Enhancement Mode Avalanche Rated Low Qg, Low Intrinsic Rg High dV/dt, Low trr TO-264 (IXFK)


    Original     		PDF IXFK55N50F IXFX55N50F 250ns O-264 IXFX55N50F IXFK55N50F ixfn*55N50F 55N50F IXFN55N50F PLUS247

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information HiPerRFTM Power MOSFETs VDSS ID25 IXFK55N50F IXFX55N50F = = 500V 55A Ω 85mΩ 250ns RDS on ≤ ≤ trr F-Class: MegaHertz Switching N-Channel Enhancement Mode Avalanche Rated Low Qg, Low Intrinsic Rg High dV/dt, Low trr TO-264 (IXFK)


    Original     		PDF IXFK55N50F IXFX55N50F 250ns O-264

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFET IXFK 55N50 IXFX 55N50 IXFN 55N50 VDSS ID25 RDS on t rr Single Die MOSFET Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C 500 500 V V VGSS VGSM Continuous Transient ±20 ±30 V V ID25 IDM TC = 25°C


    Original     		PDF 55N50 PLUS247 O-264 IXFX55N50 IXFN55N50 125OC IXFK55N50/IXFX55N50

    IXAN0031

    Abstract: ISOPLUS247 D-68623 IXFR55N50 IXFX55N50 SIL-PAD to-247
    Text: IXAN0031 New ISOPLUS247TM Power Package Features 2500V Internal Isolation Revolutionary Approach Improves Thermal Conductance and Reliability pability because the thermal expansion coefficient IXYS Corporation has introduced a new, isoof the silicon die matches that of the DCB;


    Original     		PDF IXAN0031 ISOPLUS247TM O-247, 6RIWIDFH70 ISOPLUS247 IXFR55N50 IXFX55N50 D-68623 IXAN0031 ISOPLUS247 SIL-PAD to-247

    IXAN0029

    Abstract: D8203-3 ixan00 AB-9801 D-68623 IXFX55N50 PLUS247 SIL-PAD to-247 MOSFET IGBT THEORY AND APPLICATIONS 300Kpa
    Text: IXAN0029 AB-9801 New Packages for Pressure Mounting APPLICATION BRIEF AB-9801 Prepared by Ralph E. Locher Introduction The use of pressure to mount discrete power semiconductor packages to heat sinks has been rapidly growing for many reasons. When properly executed, it has proven to be a cost effective technique and


    Original     		PDF IXAN0029 AB-9801 800-S® 900-S® PLUS247TM D-68623; IXAN0029 D8203-3 ixan00 AB-9801 D-68623 IXFX55N50 PLUS247 SIL-PAD to-247 MOSFET IGBT THEORY AND APPLICATIONS 300Kpa

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    IRF1830G

    Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
    Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23


    Original     		PDF AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696

    IXAN0009

    Abstract: 0009 ixan0009 2 ixan0009 3 TMS320F2407a GE SCR Manual mosfet inverter 2kW 100khz smps 1kW schematic diagram inverter 500w USING MOSFET schematic diagram PWM inverter 500w
    Text: IXAN0009 HOW TO DRIVE MOSFETs AND IGBTs INTO THE 21ST CENTURY By Mr. Abhijit D. Pathak and Mr. Ralph E. Locher, IXYS Corporation Santa Clara, CA 95054 ABSTRACT As the industry pushes for higher power levels and higher switching frequencies, power supplies, which use MOSFETs/IGBTs for power


    Original     		PDF IXAN0009 IXAN0009 0009 ixan0009 2 ixan0009 3 TMS320F2407a GE SCR Manual mosfet inverter 2kW 100khz smps 1kW schematic diagram inverter 500w USING MOSFET schematic diagram PWM inverter 500w

    IXAN0025

    Abstract: diode kv 1236 SIL-PAD 1000 TO 247 SIL-PAD to-247 IXFR170N10 DC to 3Phase converter SIL-PAD 26N50 CS 112 thyristor IXFX180N10
    Text: ISOPLUSTM - The Revolution in Discrete Isolation Technique Technical Application IXAN0025 Introduction When using power semiconductors, there is usually the need to electrically isolate the devices from the heatsink, which could also be the equipment chassis. The three main reasons for this are: a safety; b) the desire to reduce


    Original     		PDF IXAN0025 ISOPLUS220TM ISOPLUS247TM D-68623 IXAN0025 diode kv 1236 SIL-PAD 1000 TO 247 SIL-PAD to-247 IXFR170N10 DC to 3Phase converter SIL-PAD 26N50 CS 112 thyristor IXFX180N10

    BERULUB FR 16 B

    Abstract: circuit diagram of 5kw smps full bridge thyristor aeg UC3854 5kw harmer simmons BERULUB FR 16 Grease Berulub FR 16 Berulub FR 66 5kw smps pfc ups PURE SINE WAVE schematic diagram
    Text: Reliability Reliability General Power semiconductors used in high power electronic equipment are exposed to different conditions compared to plastic encapsulated components applied in equipment used for communication electronics. Controlling and converting of high power


    Original     		PDF IXBH40N160, BERULUB FR 16 B circuit diagram of 5kw smps full bridge thyristor aeg UC3854 5kw harmer simmons BERULUB FR 16 Grease Berulub FR 16 Berulub FR 66 5kw smps pfc ups PURE SINE WAVE schematic diagram

    MD 202

    Abstract: IXFX55N50 IXFK55N50 SOT-227B Outline IXFN55N50 55N50 "SOT-227 B" dimensions PLUS247 55n5
    Text: IXFK 55N50 IXFX 55N50 IXFN 55N50 HiPerFETTM Power MOSFET VDSS ID25 RDS on t rr Single Die MOSFET Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C 500 500 V V VGSS VGSM Continuous Transient ±20 ±30 V V ID25 IDM TC = 25°C


    Original     		PDF 55N50 PLUS247 O-264 IXFX55N50 IXFN55N50 125OC IXFK55N50/IXFX55N50 MD 202 IXFX55N50 IXFK55N50 SOT-227B Outline IXFN55N50 55N50 "SOT-227 B" dimensions 55n5

    IXAN0028

    Abstract: IXFX55N50 26N50 ISOPLUS247 IXFR150N10 IXFR170N10 IXFX180N10 PLUS247
    Text: Technical Application The Revolution in Discrete Isolation Technique IXAN0028 by Martin Arnold, Product Marketing, IXYS Semiconductor GmbH & Ralph Locher, Application Engineering, IXYS Corporation Introduction When using power semiconductors, there is usually the need to electrically isolate the devices from the heatsink, which


    Original     		PDF IXAN0028 ISOPLUS247 IXFR55N50 IXFX55N50 IXFX55N50 D-68623 IXAN0028 26N50 IXFR150N10 IXFR170N10 IXFX180N10 PLUS247

    IXFR170N10

    Abstract: SIL-PAD to-247 IXFX55N50 SIL-PAD PLUS247 26N50 ISOPLUS247 IXFR150N10 IXFR55N50 IXFX180N10
    Text: Technical Application The Revolution in Discrete Isolation Technique by Martin Arnold, Product Marketing, IXYS Semiconductor GmbH & Ralph Locher, Application Engineering, IXYS Corporation Introduction When using power semiconductors, there is usually the need to electrically isolate the devices from the heatsink, which


    Original     		PDF ISOPLUS247 IXFR55N50 IXFX55N50 IXFX55N50 D-68623 IXFR170N10 SIL-PAD to-247 SIL-PAD PLUS247 26N50 IXFR150N10 IXFR55N50 IXFX180N10

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		PDF MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2

    IXLF19N250A

    Abstract: isoplus ixys mounting Discrete IGBTS IXEL40N400 ISOPLUS247 IXFR55N50 IXFX55N50 device xray generators Igbts guide IGBT 1500V 40a
    Text: 2 5 0 0 V / 4 0 0 0 V V E RY H I G H V O LTA G E V H V I G B T S - N E W P R O D U C T B R I E F N E W P R O D U C T B R I E F SUMMARY TABLE 2500V/4000V Very High Voltage (VHV) IGBTs SIMPLIFY DESIGN, REDUCE COST AND IMPROVE RELIABILITY FOR HIGH VOLTAGE APPLICATIONS


    Original     		PDF 500V/4000V IXLF19N250A IXEL40N400 220mJ IXLF19N250A isoplus ixys mounting Discrete IGBTS IXEL40N400 ISOPLUS247 IXFR55N50 IXFX55N50 device xray generators Igbts guide IGBT 1500V 40a

    IXFH15N100

    Abstract: 2N3051 IXFX15N100 IXFH40N30 IXFM6N90 IRFP450R IXTH24N50L IXTH26N50 IXFH20N50 IXFH9N80
    Text: STI Type: IRFP354 Notes: Breakdown Voltage: 450 Continuous Current: 14 RDS on Ohm: 0.35 Trans Conductance Mhos: 5.9 Trans Conductance A: 8.4 Gate Threshold min: 2.0 Gate Threshold max: 4.0 Resistance Switching ton: 14 TYP Resistance Switching toff: 89 TYP


    Original     		PDF IRFP354 O-247 IRFP360LC 2N3049DIE 2C3049 O-204AA/TO-3 IXTM20N55A IXFH15N100 2N3051 IXFX15N100 IXFH40N30 IXFM6N90 IRFP450R IXTH24N50L IXTH26N50 IXFH20N50 IXFH9N80

    102N06

    Abstract: DE275X2-102N06A PLUS247 501N2 DE275-501N16A DE475-501N44A H12N50 DE475-102N21A ISOPLUS247 IXFX
    Text: 500KHz-82MHz POWER MOSFETS O SWITCH MODE POWER SUPPLIES & RF GENERATORS January 2003 The IXYS RF Switch Mode MOSFET family is ideal for applications requiring fast switching including laser driver, induction heating, switch mode power supplies and other non-linear industrial applications. An extensive product


    Original     		PDF 500KHz-82MHz O-247 PLUS247 ISOPLUS247 102N06 DE275X2-102N06A PLUS247 501N2 DE275-501N16A DE475-501N44A H12N50 DE475-102N21A ISOPLUS247 IXFX

    BERULUB FR 16

    Abstract: ixys vuo 52-16 ups PURE SINE WAVE schematic diagram Vienna Rectifier TL 82036 BERULUB FR 43 UC3858 schema inverter welding veridul BERULUB FR 16 B
    Text: Application Notes & Technical Information Volume 2 Volume 1 Contents Title Page Standard IGBT "G" Series M1 - 2 What is a HiPerFET Power Mosfet? M1 - 3 New 1600 V BIMOSFET Transistors Open up New Appl. M1 - 5 Comparative Performance of BIMOSFET in FLY Back Converter Circuits


    Original     		PDF ISOPLUS247 UC3854A UC3854B DN-44, TDA4817 BERULUB FR 16 ixys vuo 52-16 ups PURE SINE WAVE schematic diagram Vienna Rectifier TL 82036 BERULUB FR 43 UC3858 schema inverter welding veridul BERULUB FR 16 B

    IXFB100N50P

    Abstract: IXFN60N80P IXFK44N80P IXFK64N60P fast diode SOT-227 IXFN100N50P IXFB60N80P IXFK80N50P IXFX44N80P IXFN82N60P
    Text: HIGH CURRENT POLAR HIPERFET POWER MOSFETS N E W P R O D U C T B R I E F SUMMARY TABLE TM TM SIMPLIFY DESIGN, REDUCE COST AND IMPROVE RELIABILITY FOR HIGH CURRENT/HIGH POWER APPLICATIONS July 2006 Type B PLUS264 Description IXYS’ New High Current PolarHT™ and PolarHV™ Power MOSFETs bring many benefits to the


    Original     		PDF PLUS264 ISOPLUS247TM E153432) IXFB100N50P IXFN60N80P IXFK44N80P IXFK64N60P fast diode SOT-227 IXFN100N50P IXFB60N80P IXFK80N50P IXFX44N80P IXFN82N60P

    TO-264 weight

    Abstract: No abstract text available
    Text: High Switching Speed Power MOSFETs F-Class HiPerRF power MOSFET ^D S S b co n t p DS on) °» PD Package style Tc = 25°C Tc = 25°C >• New V A n Fig. No. Type Outline drawings on page 91-100 > IX F H 6 0 N 2 0 F ► IXFT60N20F 200 60 60 0.038 0.038


    OCR Scan     		PDF IXFT60N20F IXFH12N50F IXFT12N50F IXFH21N50F IXFT21N50F IXFH28N50F IXFT28N50F IXFK44N50F IXFX44N50F IXFK55N50F TO-264 weight

    ne 22 mosfet

    Abstract: IXFH26N60Q IXFT12N100Q IXFR100N25 IXFN26N90 FN230 IXFN36N60 N50P IXFN44N50U2 IXFN80N50
    Text: HiPerFET Power MOSFETs L° w Gate-Ch TVPeS = S u „t9 Q Avalanche rated with Fast Intrinsic Diode VDSS Max. V p DSON Wort) Tc=25 C T_=25 C A m l) G on) ISOPLUS220™ (C) ISOPLUS247™V T0268 TO-263 TO-220 PLU S 247™ ^^ l3PAK (x > .4 TO-247 ‘ (H)


    OCR Scan     		PDF ISOPLUS220TM ISOPLUS247TMV T0268 T0264 OT227B O-263 O-220 247TM O-247 O-204 ne 22 mosfet IXFH26N60Q IXFT12N100Q IXFR100N25 IXFN26N90 FN230 IXFN36N60 N50P IXFN44N50U2 IXFN80N50