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    IXFR55N50 Price and Stock

    IXYS Corporation IXFR55N50

    MOSFET N-CH 500V 48A ISOPLUS247
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    DigiKey IXFR55N50 Tube 30
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    Mouser Electronics IXFR55N50
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    IXYS Integrated Circuits Division IXFR55N50

    MOSFET DIS.48A 500V N-CH ISOPLUS247 HIPERFET THT
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    Ozdisan Elektronik IXFR55N50
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    IXFR55N50 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXFR55N50 IXYS 500V HiPerFET power MOSFET Original PDF
    IXFR55N50 IXYS HiPerFET Power MOSFETs ISOPLUS247 Scan PDF
    IXFR55N50F IXYS 500V HiPerRF power MOSFET Original PDF

    IXFR55N50 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IXAN0031

    Abstract: ISOPLUS247 D-68623 IXFR55N50 IXFX55N50 SIL-PAD to-247
    Text: IXAN0031 New ISOPLUS247TM Power Package Features 2500V Internal Isolation Revolutionary Approach Improves Thermal Conductance and Reliability pability because the thermal expansion coefficient IXYS Corporation has introduced a new, isoof the silicon die matches that of the DCB;


    Original     		PDF IXAN0031 ISOPLUS247TM O-247, 6RIWIDFH70 ISOPLUS247 IXFR55N50 IXFX55N50 D-68623 IXAN0031 ISOPLUS247 SIL-PAD to-247

    IXAN0009

    Abstract: 0009 ixan0009 2 ixan0009 3 TMS320F2407a GE SCR Manual mosfet inverter 2kW 100khz smps 1kW schematic diagram inverter 500w USING MOSFET schematic diagram PWM inverter 500w
    Text: IXAN0009 HOW TO DRIVE MOSFETs AND IGBTs INTO THE 21ST CENTURY By Mr. Abhijit D. Pathak and Mr. Ralph E. Locher, IXYS Corporation Santa Clara, CA 95054 ABSTRACT As the industry pushes for higher power levels and higher switching frequencies, power supplies, which use MOSFETs/IGBTs for power


    Original     		PDF IXAN0009 IXAN0009 0009 ixan0009 2 ixan0009 3 TMS320F2407a GE SCR Manual mosfet inverter 2kW 100khz smps 1kW schematic diagram inverter 500w USING MOSFET schematic diagram PWM inverter 500w

    IXAN0025

    Abstract: diode kv 1236 SIL-PAD 1000 TO 247 SIL-PAD to-247 IXFR170N10 DC to 3Phase converter SIL-PAD 26N50 CS 112 thyristor IXFX180N10
    Text: ISOPLUSTM - The Revolution in Discrete Isolation Technique Technical Application IXAN0025 Introduction When using power semiconductors, there is usually the need to electrically isolate the devices from the heatsink, which could also be the equipment chassis. The three main reasons for this are: a safety; b) the desire to reduce


    Original     		PDF IXAN0025 ISOPLUS220TM ISOPLUS247TM D-68623 IXAN0025 diode kv 1236 SIL-PAD 1000 TO 247 SIL-PAD to-247 IXFR170N10 DC to 3Phase converter SIL-PAD 26N50 CS 112 thyristor IXFX180N10

    BERULUB FR 16 B

    Abstract: circuit diagram of 5kw smps full bridge thyristor aeg UC3854 5kw harmer simmons BERULUB FR 16 Grease Berulub FR 16 Berulub FR 66 5kw smps pfc ups PURE SINE WAVE schematic diagram
    Text: Reliability Reliability General Power semiconductors used in high power electronic equipment are exposed to different conditions compared to plastic encapsulated components applied in equipment used for communication electronics. Controlling and converting of high power


    Original     		PDF IXBH40N160, BERULUB FR 16 B circuit diagram of 5kw smps full bridge thyristor aeg UC3854 5kw harmer simmons BERULUB FR 16 Grease Berulub FR 16 Berulub FR 66 5kw smps pfc ups PURE SINE WAVE schematic diagram

    IXAN0028

    Abstract: IXFX55N50 26N50 ISOPLUS247 IXFR150N10 IXFR170N10 IXFX180N10 PLUS247
    Text: Technical Application The Revolution in Discrete Isolation Technique IXAN0028 by Martin Arnold, Product Marketing, IXYS Semiconductor GmbH & Ralph Locher, Application Engineering, IXYS Corporation Introduction When using power semiconductors, there is usually the need to electrically isolate the devices from the heatsink, which


    Original     		PDF IXAN0028 ISOPLUS247 IXFR55N50 IXFX55N50 IXFX55N50 D-68623 IXAN0028 26N50 IXFR150N10 IXFR170N10 IXFX180N10 PLUS247

    IXFR170N10

    Abstract: SIL-PAD to-247 IXFX55N50 SIL-PAD PLUS247 26N50 ISOPLUS247 IXFR150N10 IXFR55N50 IXFX180N10
    Text: Technical Application The Revolution in Discrete Isolation Technique by Martin Arnold, Product Marketing, IXYS Semiconductor GmbH & Ralph Locher, Application Engineering, IXYS Corporation Introduction When using power semiconductors, there is usually the need to electrically isolate the devices from the heatsink, which


    Original     		PDF ISOPLUS247 IXFR55N50 IXFX55N50 IXFX55N50 D-68623 IXFR170N10 SIL-PAD to-247 SIL-PAD PLUS247 26N50 IXFR150N10 IXFR55N50 IXFX180N10

    IXLF19N250A

    Abstract: isoplus ixys mounting Discrete IGBTS IXEL40N400 ISOPLUS247 IXFR55N50 IXFX55N50 device xray generators Igbts guide IGBT 1500V 40a
    Text: 2 5 0 0 V / 4 0 0 0 V V E RY H I G H V O LTA G E V H V I G B T S - N E W P R O D U C T B R I E F N E W P R O D U C T B R I E F SUMMARY TABLE 2500V/4000V Very High Voltage (VHV) IGBTs SIMPLIFY DESIGN, REDUCE COST AND IMPROVE RELIABILITY FOR HIGH VOLTAGE APPLICATIONS


    Original     		PDF 500V/4000V IXLF19N250A IXEL40N400 220mJ IXLF19N250A isoplus ixys mounting Discrete IGBTS IXEL40N400 ISOPLUS247 IXFR55N50 IXFX55N50 device xray generators Igbts guide IGBT 1500V 40a

    102N06

    Abstract: DE275X2-102N06A PLUS247 501N2 DE275-501N16A DE475-501N44A H12N50 DE475-102N21A ISOPLUS247 IXFX
    Text: 500KHz-82MHz POWER MOSFETS O SWITCH MODE POWER SUPPLIES & RF GENERATORS January 2003 The IXYS RF Switch Mode MOSFET family is ideal for applications requiring fast switching including laser driver, induction heating, switch mode power supplies and other non-linear industrial applications. An extensive product


    Original     		PDF 500KHz-82MHz O-247 PLUS247 ISOPLUS247 102N06 DE275X2-102N06A PLUS247 501N2 DE275-501N16A DE475-501N44A H12N50 DE475-102N21A ISOPLUS247 IXFX

    BERULUB FR 16

    Abstract: ixys vuo 52-16 ups PURE SINE WAVE schematic diagram Vienna Rectifier TL 82036 BERULUB FR 43 UC3858 schema inverter welding veridul BERULUB FR 16 B
    Text: Application Notes & Technical Information Volume 2 Volume 1 Contents Title Page Standard IGBT "G" Series M1 - 2 What is a HiPerFET Power Mosfet? M1 - 3 New 1600 V BIMOSFET Transistors Open up New Appl. M1 - 5 Comparative Performance of BIMOSFET in FLY Back Converter Circuits


    Original     		PDF ISOPLUS247 UC3854A UC3854B DN-44, TDA4817 BERULUB FR 16 ixys vuo 52-16 ups PURE SINE WAVE schematic diagram Vienna Rectifier TL 82036 BERULUB FR 43 UC3858 schema inverter welding veridul BERULUB FR 16 B

    IXFB100N50P

    Abstract: IXFN60N80P IXFK44N80P IXFK64N60P fast diode SOT-227 IXFN100N50P IXFB60N80P IXFK80N50P IXFX44N80P IXFN82N60P
    Text: HIGH CURRENT POLAR HIPERFET POWER MOSFETS N E W P R O D U C T B R I E F SUMMARY TABLE TM TM SIMPLIFY DESIGN, REDUCE COST AND IMPROVE RELIABILITY FOR HIGH CURRENT/HIGH POWER APPLICATIONS July 2006 Type B PLUS264 Description IXYS’ New High Current PolarHT™ and PolarHV™ Power MOSFETs bring many benefits to the


    Original     		PDF PLUS264 ISOPLUS247TM E153432) IXFB100N50P IXFN60N80P IXFK44N80P IXFK64N60P fast diode SOT-227 IXFN100N50P IXFB60N80P IXFK80N50P IXFX44N80P IXFN82N60P

    ne 22 mosfet

    Abstract: IXFH26N60Q IXFT12N100Q IXFR100N25 IXFN26N90 FN230 IXFN36N60 N50P IXFN44N50U2 IXFN80N50
    Text: HiPerFET Power MOSFETs L° w Gate-Ch TVPeS = S u „t9 Q Avalanche rated with Fast Intrinsic Diode VDSS Max. V p DSON Wort) Tc=25 C T_=25 C A m l) G on) ISOPLUS220™ (C) ISOPLUS247™V T0268 TO-263 TO-220 PLU S 247™ ^^ l3PAK (x > .4 TO-247 ‘ (H)


    OCR Scan     		PDF ISOPLUS220TM ISOPLUS247TMV T0268 T0264 OT227B O-263 O-220 247TM O-247 O-204 ne 22 mosfet IXFH26N60Q IXFT12N100Q IXFR100N25 IXFN26N90 FN230 IXFN36N60 N50P IXFN44N50U2 IXFN80N50