55PC0211

Abstract: 55PC1221 55PC1221-22 55PC1221-20 55pc12 55PC
Contextual Info: SPECIFICATION CONTROL DRAWING TITLE 55PC1221 Date TWO CONDUCTOR CABLE, SHIELDED, JACKETED, GENERAL PURPOSE, 600 VOLT 10-24-07 Revision D This specification sheet forms a part of the latest issue of Raychem Specification 55PC. COMPONENT WIRES - 55PC0211 JACKET -

Contextual Info: CY7C251 CY7C254 CYPRESS SEMICONDUCTOR Features • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 45 ns 16,384 x 8 PROM Power Switched and Reprogrammable • TTL-compatible I/O • D irect replacement for bipolar PROMs • Capable o f w ithstanding > 2001V stat­

CY7C263-35PC

Abstract: 7C261 CY7C263 CY7C26345DMB cerdip z PACKAGE 7C264 C261 CY7C261 CY7C264 f1b0
Contextual Info: CY7C261 CY7C263/CY7C264 CYPRESS Features • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 20 ns commercial — 25 ns (military) • Low power — 660 mW (commercial) — 770 m\V (military) • Super low standby power (7C261)

7c186

Abstract: CY7C185-15VC die 7C185
Contextual Info: CY7C185 CY7C186 CYPRESS SEMICONDUCTOR Features 8,192 x 8 Static R/W RAM the memory. When CEj and WE inputs are both LOW and CE2 is H IG H , data on the The CY7C185 and CY7C186 are high-per- eight data input/output pins I/Oo through 1/ formanceCMOS static RAMs organized as O7 is written into the memory location ad8192 words by 8 bits. Easy memory expan­ dressedby the address present on the address

7c251

Abstract: a1s smd smd code A1s smd diode code A1s CY7C251 CY7C254 65WMB
Contextual Info: CY7C251 CY7C254 y CYPRESS 16K x 8 Power-Switched and Reprogrammable PROM • Direct replacement for bipolar PRO M s • C apable o f w ithstanding > 2001V static discharge Features • CMOS for optimum speed/power • Windowed for reprogrammability • High speed

cy7c131-55nc

Abstract: ZT12 CY7C130 CY7C131 CY7C140 CY7C141 IDT7130 IDT7140
Contextual Info: CY7C130/CY7C131 CY7C140/CY7C141 W CYPRESS Features • 0.8-micron CMOS for optimum speed/power • Automatic power-down • TTL compatible • Capable o f withstanding greater than 2001V electrostatic discharge • Fully asynchronous operation • Master CY7C130/CY7C131 easily ex­

Contextual Info: High Voltage, Fault-Protected Analog M ultiplexers Maxim’s MAX378 is an 8 channel single-ended 1 of 8 multiplexer with fault protection, and the MAX379 is a 4 channel differential (2 of 8) multiplexer with fault protection. Using a series N-channel, P-channel,

Contextual Info: CY7C130/CY7C131 CY7C140/CY7C141 CYPRESS SEMICONDUCTOR Features Functional Description • 0.8-micron CMOS for optimum speed/power • Automatic power-down • TTL compatible • Capable of withstanding greater than 2001V electrostatic discharge • Fully asynchronous operation

MAX378-MAX379

Contextual Info: 19-1902; Rev 1; 8/94 High-Voltage, Fault-Protected Analog Multiplexers _Features The MAX378 8-channel single-ended 1-of-8 multiplexer and the MAX379 4-channel differential (2-of-8) multiplexer use a series N-channel/P-channel/N-channel structure to

Contextual Info: FTS512K8L LOW POWER 512K x 8 CMOS STATIC RAM FEATURES Common Data I/O Three-State Outputs Fully TTL Compatible Inputs and Outputs Advanced CMOS Technology Automatic Power Down Packages —32-Pin 600 mil Plastic and Ceramic DIP —32-Pin 445 mil SOP —32-Pin TSOP II

Contextual Info: CY7C516 CY7C517 CYPRESS SEMICONDUCTOR • Features • Fast — 38-ns clock cycle commercial 16 x 16 Multipliers b e independently specified as e ith e r tw o’s com plem ent o r unsigned m agnitude num ­ bers. C ontrols a re provided fo r rounding a nd form at adjustm ent o f the full-precision 32-bit product.

Contextual Info: CY7G287 CYPRESS 64K x 8 Reprogrammable Registered PROM Features • Slim 300-mil package • CMOS for optimum speed/power • Capable o f withstanding >2001V static discharge • Windowed for reprogrammability • High speed — tSA = 45 ns — tCo = IS ns

Contextual Info: CY7C132/CY7C136 CY7C142/CY7C146 CYPRESS SEMICONDUCTOR 2K x 8 Dual-Port Static RAM Features Functional Description • 0.8-raicron CMOS for optimum speed/power • BÜSŸ output flag on CY7C132/ CY7C136; BUSY input on CY7C142/CY7C146 The CY7C132/CY 7C136/CY7C142/

27c256-200

Abstract: 27C256-70 eprom 27c256 27C256-3 cerdip z PACKAGE eprom 27c256 28 PIN DIP 150 NS 27C256 27C256-2 27C256-45 CY27C256
Contextual Info: V CY27C256 CYPRESS Features • W ide speed range — 45 ns to 200 ns com m ercial and m ilitary • Low power — 248 raW (commercial) — 303 mW (m ilitary) • Low standby power — Less th a n 83 raW when deselected • ± 10% Power supply tolerance

27H010

Abstract: CY27H010-45PC CY27H010
Contextual Info: fax id: 3023 ,.V.Ï.Ï.V.^ y nr' Æ CY27H010 CYPRESS 128K x 8 High-Speed CMOS EPROM Features try-sta nd ard 32-pin, 60 0-m il DIP, LCC, PLCC, and TSO P-I packages. These d e vice s offer high -den sity storage com ­ bined w ith 40 -M H z perform ance. The C Y 2 7H 010 is available

Contextual Info: M O SEL V IT E L IC V53C8258L UL TRA-HIGH SPEED, 3.3 VOLT256K X 8 BIT EDO PAGE MODE CMOS DYNAMIC RAM PR&BMBBOtt HIGH PERFORMANCE 60 Max. RAS Access Time, tRAC 60 ns Max. Column Address Access Time, (t^M ) 30 ns Min. Extended Data Out Page Mode Cycle Time, (tPC)

J69 Package

Contextual Info: CY7B134 CY7B135 CY7B1342 4K x 8 Dual-Port Static RAMs and 4K x 8 Dual-Port Static RAM with Semaphores Features Functional Description • 0.8-micron BiCMOS for high performance • High-speed access — 15 ns commercial — 25 ns (military) • Automatic power-down

Contextual Info: CY7B134 CY7B135 CY7B1342 F# CYPRESS 4K x 8 Dual-Port Static RAMs and 4K x 8 Dual-Port Static RAM with Semaphores Features Functional D escription • 0.8-micron BiCMOS for high performance T he CY7B134, CY7B135, and CY7B1342 are high-speed BiCMOS 4K x 8 dual-port