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    560 SMD TRANSISTOR Search Results

    560 SMD TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    560 SMD TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    c3 smd transistor

    Abstract: smd transistor C3 SMD M1 DIODE smd transistor r2 smd transistor 560 SMD transistor 23 SMD capacitor smd diode M1 m1 smd transistor SMD capacitor package
    Text: STEVAL-IFS005V1 BILL OF MATERIAL Component C1 C2 C3 C4 C5 DL1 IC1 L1 M1 Q1 R1 R2 R3 R4 * Value 470pF 470pF 1nF LV 0.1µF 50V 1µF 50V LED DIODE TDA0161 330uH Screw Plug 3 Position MMBT3904 18 KΩ 120 Ω 560 Ω 2.2 KΩ Description SMD Capacitor 1206 Size


    Original     		PDF STEVAL-IFS005V1 470pF TDA0161 330uH MMBT3904 TDA0161FP B82462-A4334K c3 smd transistor smd transistor C3 SMD M1 DIODE smd transistor r2 smd transistor 560 SMD transistor 23 SMD capacitor smd diode M1 m1 smd transistor SMD capacitor package

    Untitled

    Abstract: No abstract text available
    Text: SMD Type Type SMD Transistors IC Product specification 2SC4984 Features Large current capacity. Low collector-to-emitter saturation voltage. Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 15 V Collector-emitter voltage


    Original     		PDF 2SC4984 250mm2X0

    smd transistor bq

    Abstract: MARKING SMD npn TRANSISTOR smd transistor 560 SMD TRANSISTOR MARKING BR 2SC4617 MARKING SMD TRANSISTOR 560 smd transistor marking bs smd transistor bq 11 smd transistor bq 50
    Text: Transistors SMD Type General purpose transistor 2SC4617 SOT-523 Unit: mm +0.1 1.6-0.1 +0.1 1.0-0.1 +0.05 0.2-0.05 Features +0.01 0.1-0.01 2 0.55 Low Cob : Cob=2.0pF Typ. 1 +0.15 1.6-0.15 +0.05 0.8-0.05 NPN silicon transistor 0.35 3 +0.25 0.3-0.05 0.5 +0.1


    Original     		PDF 2SC4617 OT-523 smd transistor bq MARKING SMD npn TRANSISTOR smd transistor 560 SMD TRANSISTOR MARKING BR 2SC4617 MARKING SMD TRANSISTOR 560 smd transistor marking bs smd transistor bq 11 smd transistor bq 50

    transistor 2sc2412k

    Abstract: smd transistor bq smd transistor bq 50 SMD TRANSISTOR MARKING BR 2SC2412K transistor 2sc.2412K 2SC2412K smd
    Text: Transistors IC SMD Type General Purpose Transistor 2SC2412K SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 Low Cob.Cob=2.0pF Typ. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base


    Original     		PDF 2SC2412K OT-23 transistor 2sc2412k smd transistor bq smd transistor bq 50 SMD TRANSISTOR MARKING BR 2SC2412K transistor 2sc.2412K 2SC2412K smd

    MARKING SMD PNP TRANSISTOR FR

    Abstract: smd transistor fq smd transistor pnp fq SMD TRANSISTOR MARKING fq TRANSISTOR smd FQ FR MARKING SMD TRANSISTOR marking FQ MARKING SMD PNP TRANSISTOR smd transistor 560 MARKING SMD TRANSISTOR 560
    Text: Transistors SMD Type General Purpose Transistor 2SA1037AK SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 PNP silicon transistor +0.1 1.3-0.1 +0.1 2.4-0.1 Excellent hFE linearity. 0.4 3 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1


    Original     		PDF 2SA1037AK OT-23 -50mA/-5mA 30MHz MARKING SMD PNP TRANSISTOR FR smd transistor fq smd transistor pnp fq SMD TRANSISTOR MARKING fq TRANSISTOR smd FQ FR MARKING SMD TRANSISTOR marking FQ MARKING SMD PNP TRANSISTOR smd transistor 560 MARKING SMD TRANSISTOR 560

    smd bf

    Abstract: 2SB1123 BF Marking
    Text: Transistors SMD Type High-Current Switching Applications 2SB1123 Features Adoption of FBET, MBIT processes. Low collector-to-emitter saturation voltage. Large current capacity and wide ASO. Fast switching speed. Absolute Maximum Ratings Ta = 25 Parameter Symbol


    Original     		PDF 2SB1123 250mm250 -50mA smd bf 2SB1123 BF Marking

    smd marking BG

    Abstract: 2SB1124 br 39 SMD Bg marking
    Text: Transistors SMD Type PNP Epitaxial Planar Silicon Transistors 2SB1124 Features Adoption of FBET, MBIT processes. Low collector-to-emitter saturation voltage. Fast switching speed. Large current capacity and wide ASO. Absolute Maximum Ratings Ta = 25 Parameter


    Original     		PDF 2SB1124 -100mA smd marking BG 2SB1124 br 39 SMD Bg marking

    transistor SMD MARKING CODE HF

    Abstract: smd code HF transistor TRANSISTOR SMD MARKING CODE BS transistor smd 723 TRANSISTOR SMD MARKING CODE
    Text: Comchip General Purpose Transistor SMD Diode Specialist 2SC5658-HF NPN RoHS Device Halogen Free Features SOT-723 -Low Cob. 0.011(0.270) 0.007(0.170) 1 Mechanical data 0.049(1.25) 0.031(0.800) -Case: SOT-723, molded plastic. -Terminals: solderable per MIL-STD-750,


    Original     		PDF 2SC5658-HF OT-723 OT-723, MIL-STD-750, QW-JTR07 transistor SMD MARKING CODE HF smd code HF transistor TRANSISTOR SMD MARKING CODE BS transistor smd 723 TRANSISTOR SMD MARKING CODE

    smd marking BA

    Abstract: 2sb111 2SB1118
    Text: Transistors SMD Type PNP Epitaxial Planar Silicon Transistors 2SB1118 Features Low collector-to-emitter saturation voltage. Very small size making it easy to provide highdensity, Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter


    Original     		PDF 2SB1118 -100mA -10mA -50mA smd marking BA 2sb111 2SB1118

    transistor SMD MARKING CODE HF

    Abstract: SMD TRANSISTOR MARKING BR smd code HF transistor TRANSISTOR SMD MARKING CODE p1 6V 100 smd diode MARKING SMD TRANSISTOR 560 TRANSISTOR SMD MARKING CODE MV DIODE smd transistor code smd transistor A10 TRANSISTOR SMD MARKING CODE BS t
    Text: Comchip General Purpose Transistor SMD Diode Specialist 2SC5658-HF NPN RoHS Device Halogen Free Features SOT-723 -Low Cob. 0.011(0.270) 0.007(0.170) 1 Mechanical data 0.049(1.25) 0.031(0.800) -Case: SOT-723, molded plastic. -Terminals: solderable per MIL-STD-750,


    Original     		PDF 2SC5658-HF OT-723 OT-723, MIL-STD-750, QW-JTR07 transistor SMD MARKING CODE HF SMD TRANSISTOR MARKING BR smd code HF transistor TRANSISTOR SMD MARKING CODE p1 6V 100 smd diode MARKING SMD TRANSISTOR 560 TRANSISTOR SMD MARKING CODE MV DIODE smd transistor code smd transistor A10 TRANSISTOR SMD MARKING CODE BS t

    2SD1618

    Abstract: No abstract text available
    Text: Transistors SMD Type Product specification 2SD1618 Features Low collector-to-emitter saturation voltage. Very small size making it easy to provide highdensity, Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage


    Original     		PDF 2SD1618 250mm2X0 100mA 2SD1618

    2SB1122

    Abstract: BE MARKING
    Text: Transistors SMD Type PNP Epitaxial Planar Silicon Transistors 2SB1122 Features Adoption of FBET process. Very small size making it easy to provide highdensity hybrid IC’ s. Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter


    Original     		PDF 2SB1122 -500mA -50mA 2SB1122 BE MARKING

    MARKING SMD TRANSISTOR 560

    Abstract: SMD BR 12 transistor SMD CT 2SC4984 MARKING SMD NPN TRANSISTOR BR smd transistor 560
    Text: Transistors SMD Type NPN Epitaxial Planar Silicon Transistor 2SC4984 Features Large current capacity. Low collector-to-emitter saturation voltage. Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 15 V Collector-emitter voltage


    Original     		PDF 2SC4984 250mm2X0 MARKING SMD TRANSISTOR 560 SMD BR 12 transistor SMD CT 2SC4984 MARKING SMD NPN TRANSISTOR BR smd transistor 560

    transistor SMD DK

    Abstract: smd transistor marking DK transistor smd marking dk smd MARKING dk transistor 2SD1628 SMD SMD marking DK ON MARKING SMD NPN TRANSISTOR BR MARKING SMD TRANSISTOR transistor SMD DK -RN 2SD1628
    Text: Transistors SMD Type NPN Epitaxial Planar Silicon Transistor 2SD1628 Features Low saturation voltage. High hFE. Large current capacity. Very small size making it easy to provide highdensity, small-sized hybrid IC’ s. Absolute Maximum Ratings Ta = 25 Parameter


    Original     		PDF 2SD1628 250mm2X0 transistor SMD DK smd transistor marking DK transistor smd marking dk smd MARKING dk transistor 2SD1628 SMD SMD marking DK ON MARKING SMD NPN TRANSISTOR BR MARKING SMD TRANSISTOR transistor SMD DK -RN 2SD1628

    smd marking DA

    Abstract: marking da 2SD1618 DA SMD SMD BR 08 DA marking
    Text: Transistors SMD Type PNP Epitaxial Planar Silicon Transistors 2SD1618 Features Low collector-to-emitter saturation voltage. Very small size making it easy to provide highdensity, Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage


    Original     		PDF 2SD1618 250mm2X0 500mA 100mA smd marking DA marking da 2SD1618 DA SMD SMD BR 08 DA marking

    Untitled

    Abstract: No abstract text available
    Text: Transistors SMD Type Product specification 2SD1624 Features Low collector-to-emitter saturation voltage. Fast switching speed. Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 60 V Collector-emitter voltage VCEO 50


    Original     		PDF 2SD1624 250mm2X0

    2SB1121

    Abstract: No abstract text available
    Text: Transistors SMD Type PNP Epitaxial Planar Silicon Transistors 2SB1121 Features Adoption of FBET, MBIT processes. Low collector-to-emitter saturation voltage. Large current capacity and wide ASO. Fast switching speed. Very small size making it easy to provide highdensity,


    Original     		PDF 2SB1121 -75mA 2SB1121

    2SD1622

    Abstract: MARKING SMD TRANSISTOR 560 SMD TRANSISTOR MARKING DE MARKING SMD npn TRANSISTOR MARKING SMD NPN TRANSISTOR BR smd transistor 560
    Text: Transistors SMD Type NPN Epitaxial Planar Silicon Transistor 2SD1622 Features Adoption of FBET process. Very small size making it easy to provide highdensity hybrid IC’ s. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage


    Original     		PDF 2SD1622 250mm2X0 2SD1622 MARKING SMD TRANSISTOR 560 SMD TRANSISTOR MARKING DE MARKING SMD npn TRANSISTOR MARKING SMD NPN TRANSISTOR BR smd transistor 560

    Untitled

    Abstract: No abstract text available
    Text: Transistors SMD Type Product specification 2SD1622 Features Adoption of FBET process. Very small size making it easy to provide highdensity hybrid IC’ s. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage


    Original     		PDF 2SD1622 250mm2X0

    smd transistor marking DF

    Abstract: smd transistor df MARKING SMD TRANSISTOR 560 MARKING SMD npn TRANSISTOR MARKING SMD NPN TRANSISTOR BR 2SD1623 transistor SMD DF transistor smd marking df smd transistor 560
    Text: Transistors SMD Type NPN Epitaxial Planar Silicon Transistor 2SD1623 Features Adoption of FBET, MBIT processes. Low collector-to-emitter saturation voltage. Large current capacity and wide ASO. Fast switching speed. The ultraminiature package facilitates higher-density mounting, thus allows the applied


    Original     		PDF 2SD1623 smd transistor marking DF smd transistor df MARKING SMD TRANSISTOR 560 MARKING SMD npn TRANSISTOR MARKING SMD NPN TRANSISTOR BR 2SD1623 transistor SMD DF transistor smd marking df smd transistor 560

    Untitled

    Abstract: No abstract text available
    Text: Transistors SMD Type Product specification 2SD1623 Features Adoption of FBET, MBIT processes. Low collector-to-emitter saturation voltage. Large current capacity and wide ASO. Fast switching speed. The ultraminiature package facilitates higher-density mounting, thus allows the applied


    Original     		PDF 2SD1623

    Untitled

    Abstract: No abstract text available
    Text: Transistors SMD Type High-Current Switching Applications 2SB1202 TO-252 6.50 +0.2 5.30-0.2 Features +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 +0.15 4.60-0.15 0.127 max 3 .8 0 +0.25 2.65 -0.1 +0.1 0.80-0.1 +0.28 1.50 -0.1


    Original     		PDF 2SB1202 O-252 -100mA

    2SB120

    Abstract: 2SB1201
    Text: Transistors SMD Type High-Current Switching Applications 2SB1201 TO-252 Features 6.50 +0.2 5.30-0.2 Low collector-to-emitter saturation voltage. +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 +0.15 4.60-0.15 3 .8 0 +0.15


    Original     		PDF 2SB1201 O-252 -50mA 2SB120 2SB1201

    Untitled

    Abstract: No abstract text available
    Text: Transistors Diodes SMD Type Product specification 2SD1628 Features Low saturation voltage. High hFE. Large current capacity. Very small size making it easy to provide highdensity, small-sized hybrid IC’ s. Absolute Maximum Ratings Ta = 25 Parameter Symbol


    Original     		PDF 2SD1628 250mm2X0