Untitled
Abstract: No abstract text available
Text: User's Guide SLVU464 – July 2011 UCD90SEQ48EVM-560: 48-Pin Sequencer Development Board This user's guide describes the 48-pin Sequencer Development Board – UCD90SEQ48EVM-560. This development board contains a 48-pin socket and interface circuitry to support the UCD9090.
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SLVU464
UCD90SEQ48EVM-560:
48-Pin
UCD90SEQ48EVM-560.
UCD9090.
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Untitled
Abstract: No abstract text available
Text: SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FMMT560 ISSUE 1 – NOVEMBER 1998 FEATURES * Excellent hFE characterisristics up to IC=50mA * Low Saturation voltages E C PARTMARKING DETAIL – 560 B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage
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FMMT560
100ms
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pnp 500v
Abstract: FMMT560 DSA003698
Text: SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FMMT560 ISSUE 1 – NOVEMBER 1998 FEATURES * Excellent hFE characterisristics up to IC=50mA * Low Saturation voltages E C PARTMARKING DETAIL – 560 B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage
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FMMT560
100ms
pnp 500v
FMMT560
DSA003698
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switch SOT-23-6
Abstract: No abstract text available
Text: NJM41030 3dB Video Amplifier • GENERAL DESCRIPTION The NJM41030 is a small package 3dB video amplifier. ■ FEATURES ● Operating Voltage ● Operating temperature range ● 3.1dB Amplifier, 560Ω Driver ● Frequency Characteristics ● Power Save Circuit
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NJM41030
NJM41030
10MHz
NJM41030F1
OT-23-6
switch SOT-23-6
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Untitled
Abstract: No abstract text available
Text: NJM41030 3dB Video Amplifier p GENERAL DESCRIPTION The NJM41030 is a small package 3dB video amplifier. p FEATURES n Operating Voltage n Operating temperature range n 3.1dB Amplifier, 560Ω Driver n Frequency Characteristics n Power Save Circuit n Bipolar Technology
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NJM41030
NJM41030
NJM41030F1
10MHz
OT-23-6
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NJM4103
Abstract: No abstract text available
Text: NJM41030 3dB Video Amplifier Q GENERAL DESCRIPTION The NJM41030 is a small package 3dB video amplifier. Q FEATURES O Operating Voltage O Operating temperature range O 3.1dB Amplifier, 560Ω Driver O Frequency Characteristics O Power Save Circuit O Bipolar Technology
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NJM41030
NJM41030
10MHz
OT-23-6
NJM41030F1
NJM4103
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c5607
Abstract: TLV3702 TLV3701 TLV3701CD TLV3704 TLV370X
Text: TLV3701, TLV3702, TLV3704 FAMILY OF NANOPOWER PUSH-PULL OUTPUT COMPARATORS SLCS137A – NOVEMBER 2000 – REVISED JANUARY 2001 D D SUPPLY CURRENT vs SUPPLY VOLTAGE 800 description The TLV370x is Texas Instruments’ first family of nanopower comparators with only 560 nA per
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TLV3701,
TLV3702,
TLV3704
SLCS137A
TLV370x
c5607
TLV3702
TLV3701
TLV3701CD
TLV3704
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Untitled
Abstract: No abstract text available
Text: TLV3701, TLV3702, TLV3704 FAMILY OF NANOPOWER PUSH-PULL OUTPUT COMPARATORS SLCS137 – NOVEMBER 2000 D D D D D D Low Supply Current . . . 560 nA/Per Channel Input Common-Mode Range Exceeds the Rails . . . –0.1 V to VCC + 5 V Supply Voltage Range . . . 2.5 V to 16 V
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TLV3701,
TLV3702,
TLV3704
SLCS137
OT-23
TLV3701)
TLV3702)
SLOU060
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MIDCOM 671-8005
Abstract: "Microphone Preamplifier" electret mic carbon microphone Midcom modem transformer 671-8005 671-8005 preamplifier for microphone 10kv transformer AD8517 AD8527
Text: a AN-560 APPLICATION NOTE One Technology Way • P.O. Box 9106 • Norwood, MA 02062-9106 • 781/329-4700 • World Wide Web Site: http://www.analog.com Low Voltage Amplifier By Olivier Betancourt BATTERY VOLTAGE DISCHARGE The AD8517 operates at supply voltages as low as 1.8 V.
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AN-560
AD8517
AD8517
E3760
AD8527
MIDCOM 671-8005
"Microphone Preamplifier"
electret mic
carbon microphone
Midcom modem transformer 671-8005
671-8005
preamplifier for microphone
10kv transformer
AD8527
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vbci
Abstract: TLV3702 TLV3701 TLV3701CD TLV3704 TLV370X 53VCC
Text: TLV3701, TLV3702, TLV3704 FAMILY OF NANOPOWER PUSH-PULL OUTPUT COMPARATORS SLCS137A – NOVEMBER 2000 – REVISED JANUARY 2001 D D D D D D Low Supply Current . . . 560 nA/Per Channel Input Common-Mode Range Exceeds the Rails . . . –0.1 V to VCC + 5 V Supply Voltage Range . . . 2.5 V to 16 V
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TLV3701,
TLV3702,
TLV3704
SLCS137A
OT-23
TLV3701)
TLV3702)
SLOU060
TLV370x
vbci
TLV3702
TLV3701
TLV3701CD
TLV3704
53VCC
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Q62901-B65
Abstract: Q62902-B156-F222 Q62902-B152-F222 A671 transistor Datasheet diode BZW 70-20 LW T67C-S2U1-35 Q62703-Q6351 LM776 din standard 5480 Q62703-P4699
Text: LUMINESZENZDIODEN LIGHT EMITTING DIODES 58 Wavelength λdomtyp. 645 nm 633 nm 628 nm 617 nm 606 nm 590 nm 587 nm 570 nm 560 nm 528 nm 505 nm 470 nm 465 nm Viewing Angle (typ.) 30 … 70 degrees 40 … 80 degrees > 80 degrees > 80 degrees > 80 degrees Die Technology
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HOP2000)
Q62902-B154-F222
Q62902-B141-F222
GEXY6720
Q62901-B65
Q62902-B156-F222
Q62902-B152-F222
A671 transistor
Datasheet diode BZW 70-20
LW T67C-S2U1-35
Q62703-Q6351
LM776
din standard 5480
Q62703-P4699
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FMMT560T
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated FMMT560 500V PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR IN SOT23 Features Mechanical Data • • • • • • • • • • • • BVCEO > -500V IC = -150mA high Continuous Collector Current Excellent hFE Characteristics up to IC = 100mA
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FMMT560
-500V
-150mA
100mA
AEC-Q101
J-STD-020
MIL-STD-202,
DS33102
FMMT560T
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated FMMT560Q 500V PNP HIGH VOLTAGE TRANSISTOR IN SOT23 Description Mechanical Data This Bipolar Junction Transistor BJT has been designed to meet the stringent requirements of Automotive Applications. • Features
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FMMT560Q
-500V
-150mA
500mA
100mA
AEC-Q101
DS37020
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated FMMT560 500V PNP HIGH VOLTAGE TRANSISTOR IN SOT23 Features Mechanical Data • BVCEO > -500V IC = -150mA high Continuous Collector Current ICM Up to 500mA Peak Pulse Current Excellent hFE Characteristics up to IC = 100mA
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FMMT560
-500V
-150mA
500mA
100mA
AEC-Q101
J-STD-020
DS33102
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E50U
Abstract: PNP TRANSISTOR "SOT23-6L"
Text: IMZ2A COMPLEMENTARY DUAL GENERAL PURPOSE AMPLIFIER TRANSISTORS VOLTAGE 50 Volts POWER SOT23-6L 300mW Unit：inch mm FEATURES • PNP/ NPN epitaxial silicon, planar design • Collector-emitter voltage VCE=50V • Collector current IC=150mA • Lead free in comply with EU RoHS 2002/95/EC directives.
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150mA
2002/95/EC
IEC61249
300mW
OT23-6L
OT23-6L
MIL-STD-750
RB500V-40
E50U
PNP TRANSISTOR "SOT23-6L"
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon Featrues L2SA1037AKQLT1G Series z We declare that the material of product compliance with RoHS requirements. 3 ORDERING INFORMATION Device Shipping Package 1 L2SA1037AKQLT1G SOT23 3000/Tape & Reel
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L2SA1037AKQLT1G
L2SA1037AKQLT1G
3000/Tape
L2SA1037AKQLT3G
10000/Tape
OT-23
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon Features L2SA1037AKQLT1G Series z We declare that the material of product compliance with RoHS requirements. 3 ORDERING INFORMATION Device Shipping Package 1 L2SA1037AKQLT1G SOT23 3000/Tape & Reel
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L2SA1037AKQLT1G
L2SA1037AKQLT1G
3000/Tape
L2SA1037AKQLT3G
10000/Tape
OT-23
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L2SA1037AKRLT1G
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon Featrues L2SA1037AKXLT1G Series z We declare that the material of product compliance with RoHS requirements. 3 ORDERING INFORMATION Device Shipping Package 1 L2SA1037AKXLT1G SOT23 3000/Tape & Reel
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L2SA1037AKXLT1G
L2SA1037AKXLT1G
3000/Tape
10000/Tape
OT-23
L2SA1037AKRLT1G
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon Featrues L2SA1037AKXLT1G z We declare that the material of product compliance with RoHS requirements. 3 ORDERING INFORMATION Device Shipping Package 1 L2SA1037AKXLT1G SOT23 3000/Tape & Reel
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L2SA1037AKXLT1G
3000/Tape
10000/Tape
OT-23
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Untitled
Abstract: No abstract text available
Text: SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 1 - NOVEMBER 1998 o m FEATURES * E xce lle n t h FE c h a ra cte risristics up to lc = 50m A * L o w S a tu ra tio n v o lta g e s PARTM ARKING D E T A IL - 560 ABSOLUTE M AXIM UM RATINGS. PARAMETER VALUE
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-50mA,
-100mA,
-10mA,
50MHz
-100V,
FMMT560
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Untitled
Abstract: No abstract text available
Text: SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 1 - NOVEMBER 1998 o m FEATURES * E xce lle n t hFE c h a ra cte risristics up to lc= 5 0m A * L o w S a tu ra tio n v o lta g e s PARTM ARKING D E T A IL - 560 ABSOLUTE M AXIM UM RATINGS. PARAMETER SYMBOL
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-100jj
-10mA*
-500V;
-500V
-20mA,
-50mA,
-10mA
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BAT54A
Abstract: BAT54C BAT54S 12p sot-23 MV MARKING SOT23 ,MARKING 12p SOT-23 LF MARKING CODE MARKING 12p SOT-23
Text: 7 1 1 0 0 2 b G ü b ö 3 0 ö 560 • P H I N BAT54A; C; S SCHOTTKY BARRIER DIODE Silicon epitaxial Schottky Barrier double diodes with an integrated p-n junction protection ring in a microminiature SOT-23 envelope intended for surface mounting. The diodes feature an especially low forward voltage.
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711002b
BAT54A;
OT-23
OT-23.
BAT54A
BAT54C
BAT54S
12p sot-23
MV MARKING SOT23
,MARKING 12p SOT-23
LF MARKING CODE
MARKING 12p SOT-23
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667 transistor ecb
Abstract: SOT-23 EBC SCR TRANSISTOR scr 209
Text: Mechanical Drawings 201 Mechanical Drawings All Dimensions in inches mm . AX-5W Case 106 037(0.94] 043(1.09) 1.0(25.4) M I N I MUM .330(8.38] .350(8.89) T 13 0 ( 3 . 3 0 ) 145(3.68) 1.0(25.4) M I N I MUM Case B-M Case A 4 125(3. .560(14 22 ) •600(15 24)
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O-220
O-220AC
O-237
O-247
667 transistor ecb
SOT-23 EBC
SCR TRANSISTOR
scr 209
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BB109G
Abstract: BB105B BB109 BB105G BB112 BBY40 T092
Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 electronics B apM Kanbi Kofl: Ddm» [n ] Cdm» [n®] V r » [B] If [mA] BB105G BB109G BBY40 BB105B 1,8 4,3 6,0 2,0 18 32 30 18 30 30 30 35 0,2 0,2 0,02 0,2 BB112 17,0 560 12 0,05 Kopnyc
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BB105G
BB109G
BBY40
BB105B
BB112
BB109
T092
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