Contextual Info: 57C4501-50/65/80 a High Density First-in First-out FIFO 512x9 CMOS Memory Ol Advance Information •*1 DISTINCTIVE CHARACTERISTICS RAM based FIFO 512x9 organization Cycle times of 65/80/100 nanoseconds Asynchronous and simultaneous writes and reads Low power consumption - 80 mA maximum

Contextual Info: ADV MICRO I MEMORY IME D • 025752Ö 0020233 57C4501-50/65/80 High Density First-in First-out FIFO 512x9 CMOS Memory <i a Advance Information ui o DISTINCTIVE CHARACTERISTICS Retransmit capability Expandable In both width and_depth Increased noise immunity for XI - CMOS

DIP 16 DRAWING Advanced Micro Devices

Abstract: 57401j mmi SINGLE SHIP ORGAN INCOMING RAW MATERIAL INSPECTION checklist Defense 5962-85155 MMI PAL14L8 38510 Cross Reference
Contextual Info: M ilitary S p ecialty M em ory Whatever your military data buffering needs, Advanced Micro Devices has the right specialty memory device to fit your applica­ tion. All of our military bipolar and CMOS First-in First-out FIFO memories are fully screened to MIL-STD-883.

wf vqc 10d

Abstract: TGS 2201 SMD W2T TRANSISTOR SMD W2T 72 EX5962 MMI PAL14L8 C57401j tms 6011 MIMI Ti PROM programming procedure w2t smd
Contextual Info: 2 Specialty Memory Products 1988 Data Book Advanced Micro Devices Monolithic ryisn Memories UliTlU A W h o lly O w n e d S u b s id ia ry o f A d v a n c e d M ic r o D e vice s a Advanced Micro Devices Sp ecialty Memory Products Data Book/Handbook Introduction

Monolithic Memories

Contextual Info: Deep First-In First-Out FIFO Buffer Memory (7 V O rdering Inform ation F ea tu res / B enefits • Fun c tio n a lly a n d p in c o m p a tib le with Mostek MK4501 FIFO C * CMOS RAM-based architecture Expandable to any word depth and word width Asynchronous operation