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    Toshiba America Electronic Components MG25Q6ES50A

    SILICON N CHANNEL IGBT GTR MODULE Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel
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    ComSIT USA MG25Q6ES50A 40
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    MG25Q6ES50

    Abstract: No abstract text available
    Text: TOSHIBA 5Q6ES50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG 2 5Q6ES50 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • The Electrodes are Isolated from Case. High Input Impedance. 6 IGBTs Built Into 1 Package. EQUIVALENT CIRCUIT


    OCR Scan     		PDF MG25Q6ES50 2-108E1A 961001EAA1 VGE--10V 10//s MG25Q6ES50

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    Abstract: No abstract text available
    Text: TOSHIBA 5Q6ES50 TENTATIVE TOSHIBA G IR MODULE SILICON N CHANNEL IGBT MG 1 5Q6ES50 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • H igh In p u t Im pedance • H igh Speed : t f = 0.3/<s M ax. In d uctive Load • Low S a tu r a tio n V o ltag e


    OCR Scan     		PDF M615Q6ES50 5Q6ES50 961001EAA1 MG15Q6ES50

    S5J53

    Abstract: MIG30J103H 200J2 S5J25 mg7502ys MG150J1JS50 MIG100Q201H GT60M301 MIG30J103HB MP6753
    Text: TOSHIBA [2 ] Introduction [ 2 ] Introduction 1. 600-V Third Generation IGBTs • • • M iniaturization technologies have improved the trade-off between switching speed and saturation voltage V qe (sat = 2-l v Ctyp.) tf = 0.2 pis (typ.). The therm al resistance has been cut for added reliability by using a high heat conduction


    OCR Scan     		PDF 200-V 400J101H MG75J1BS11 MG25J1B511 MG50J1BS11 MG100J1BS11 MG150J1BS11 MG25Q1BS11 MG50Q1BS11 MG75Q1BS11 S5J53 MIG30J103H 200J2 S5J25 mg7502ys MG150J1JS50 MIG100Q201H GT60M301 MIG30J103HB MP6753