5A JFET Search Results

5A JFET Result Highlights (5)

Part	Manufacturer	Description
DG191AP/B	Rochester Electronics LLC	DG191 - Dual SPDT, High-Speed Drivers with JFET Switch
DG182AP/B	Rochester Electronics	DG182 - Dual SPST, High-Speed Drivers with JFET Switch
ISL28210FBZ-T13	Renesas Electronics Corporation	Precision Low Noise JFET Operational Amplifiers
ISL28210FBZ-T7A	Renesas Electronics Corporation	Precision Low Noise JFET Operational Amplifiers
ISL28210FBZ	Renesas Electronics Corporation	Precision Low Noise JFET Operational Amplifiers

5A JFET Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: SSFP5N20 StarMOST Power MOSFET • Extremely high dv/dt capability ■ Low Gate Charge Qg results in VDSS = 200V Simple Drive Requirement ID25 =5A ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Very good manufacturing repeatability	Original	SSFP5N20 di/dt60A/S TJ150 width300S;	PDF
MAX713 equivalent Abstract: 48V-to-5V 330uH cd54 max756 MAX726 MAX749 440v ac voltage regulator MAX724 max7135 lcd at-101 Text: Volume Twelve NEWS BRIEFS Maxim reports record revenues for the fourth quarter 1993 2 IN-DEPTH ARTICLE Fault-tolerant CMOS multiplexers offer "best buy" protection 3 DESIGN SHOWCASE 48V-to-5V dc-dc converter borrows power from phone lines 8 Switch-mode battery charger delivers 5A	Original	MAX187/189) MAX509/510) LT1013/1014/1178/1179) LT1016/11ce MAX805L MAX813L MAX667 MAX813L. MAX713 equivalent 48V-to-5V 330uH cd54 max756 MAX726 MAX749 440v ac voltage regulator MAX724 max7135 lcd at-101	PDF
transistor CB 945 Abstract: 8508901YX 8508902YX ELH0101 ELH0101AK ELH0101K MIL-I-45208A D3B operational amplifier 10eb2 DCM4 SMD Text: Power Operational Amplifier Features General Description 5A peak 2A continuous output current 10 V ms slew rate 300 kHz power bandwidth 850 mW standby power g 15V supplies 300 pA input bias current Virtually no crossover distortion 2 ms settling time to 0 01%	Original	MIL-STD-883 ELH0101 883are transistor CB 945 8508901YX 8508902YX ELH0101AK ELH0101K MIL-I-45208A D3B operational amplifier 10eb2 DCM4 SMD	PDF
P-Channel Depletion Mode FET Abstract: P-Channel Depletion Mosfets P-Channel Depletion Mode Field Effect Transistor P-Channel Depletion mosFET n channel depletion MOSFET N-Channel JFET FETs Siliconix JFET application note list of n channel fet shockley diode p channel depletion mosfet Text: AN101 An Introduction to FETs The family tree of FET devices Figure 1 may be divided into two main branches, Junction FETs (JFETs) and Insulated Gate FETs (or MOSFETs, metal-oxidesemiconductor field-effect transistors). Junction FETs are inherently depletion-mode devices, and are available in	Original	AN101 P-Channel Depletion Mode FET P-Channel Depletion Mosfets P-Channel Depletion Mode Field Effect Transistor P-Channel Depletion mosFET n channel depletion MOSFET N-Channel JFET FETs Siliconix JFET application note list of n channel fet shockley diode p channel depletion mosfet	PDF
P-Channel Depletion Mosfets Abstract: shockley diode P-Channel Depletion Mode FET shockley diode application shockley diode datasheet n channel depletion MOSFET list of n channel fet jfet idss 10 ma vp -3 diode shockley P-Channel Depletion Mode Field Effect Transistor Text: AN101 An Introduction to FETs The family tree of FET devices Figure 1 may be divided into two main branches, Junction FETs (JFETs) and Insulated Gate FETs (or MOSFETs, metal-oxide- semiconductor field-effect transistors). Junction FETs are inherently depletion-mode devices, and are available in	Original	AN101 P-Channel Depletion Mosfets shockley diode P-Channel Depletion Mode FET shockley diode application shockley diode datasheet n channel depletion MOSFET list of n channel fet jfet idss 10 ma vp -3 diode shockley P-Channel Depletion Mode Field Effect Transistor	PDF
SEMISOUTH Abstract: 1200v 30A to247 JFETs SiC jfets downhole ASJD1200R045 Text: ADVANCED INFORMATION Silicon Carbide SiC Schottky Diodes and JFETs Die Inside Why SiC for your Military, Aerospace SiC JFETs • 1200V & 1700V Breakdown Voltages and Down-hole Applications? • Extreme Performance • Operation Beyond Mil Temp - Elevated Temp Range (TJ), -55oC to +200oC	Original	-55oC 200oC 260oC* MIL-PRF-19500 O-257) O-257 SEMISOUTH 1200v 30A to247 JFETs SiC jfets downhole ASJD1200R045	PDF
Amplifiers Abstract: 12v 100w amplifier mosfet 20mhz power piezo amplifier driver -audio input 220v and output 4v power amplifier for sonar sonar 200khz QA451 QA453 alarm sonar Text: QA 452 High Voltage Amplifier Rev 1.0 Shortform Datasheet Features: • High Voltage, High Speed Amplifier • JFET Input • High Gain Bandwith Product: 20MHz • Rugged MOSFET output stage • Shutdown w. high impedance output and reduced current consumption	Original	20MHz 1Vpp/200kHz/50 Amplifiers 12v 100w amplifier mosfet 20mhz power piezo amplifier driver -audio input 220v and output 4v power amplifier for sonar sonar 200khz QA451 QA453 alarm sonar	PDF
5-pin smd Voltage Regulators Abstract: RH1499 msk5059 RH1498dice MSK5058 RH1013DICE 5962F0921603 MSK5820 rh1014 MSK5044RH Text: SPACE QUALIFIED PRODUCTS RADIATION HARD AMPLIFIERS Part type RH101A RH101ADICE MSK0041RH MSK106RH RH1078M RH1078MDICE RH07 RH07CDICE RH1013M RH1013DICE RH1014M MSK114RH RH108A RH108ADICE RH27AE RH27E RH27C RH27CDICE RH1056A RH1056DICE RH1498M RH1498DICE MSK198RH	Original	RH101A RH101ADICE MSK0041RH MSK106RH RH1078M RH1078MDICE RH07CDICE RH1013M RH1013DICE RH1014M 5-pin smd Voltage Regulators RH1499 msk5059 RH1498dice MSK5058 RH1013DICE 5962F0921603 MSK5820 rh1014 MSK5044RH	PDF
ASJD1200R045 Abstract: SiC JFET JFET semisouth silicon carbide JFET SJDP120R045 silicon carbide j-fet SEMISOUTH semisouth JFET VGS15V TO258 Text: ADVANCE INFORMATION SiC JFET ASJD1200R045 Normally-ON Trench Silicon Carbide Power JFET BVDS FEATURES: ProductSummary 1200 RDS ON max 0.045 V : ETS,typ TBD J Die Inside • Hermetic TO-258 Packaging • 200°C Maximum Operating Temperature (260oC Contact Factory)	Original	ASJD1200R045 O-258 260oC MIL-PRF-19500 MIL-STD-750 O-258 SJDP120R045 O-247 ASJD1200R045 SiC JFET JFET semisouth silicon carbide JFET silicon carbide j-fet SEMISOUTH semisouth JFET VGS15V TO258	PDF
SiC JFET Abstract: JFET semisouth SJDP120R045 5A JFET ASJD1200R045 SEMISOUTH SJDP Text: ADVANCED INFORMATION SiC JFET ASJD1200R045 Normally-ON Trench Silicon Carbide Power JFET BVDS FEATURES: ProductSummary 1200 RDS ON max 0.045 V : ETS,typ TBD J Die Inside • Hermetic TO-257 Packaging • 200°C Maximum Operating Temperature (260oC Contact Factory)	Original	ASJD1200R045 O-257 260oC MIL-PRF-19500 MIL-STD-750 O-257 SJDP120R045 O-247 ASJD1200R045 SiC JFET JFET semisouth 5A JFET SEMISOUTH SJDP	PDF
Diode 400V 5A Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN Text: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM	Original	2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 Diode 400V 5A lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN	PDF
jfet transistor Abstract: lovoltech PWRLITE-LS201N J-FET TRANSISTOR jfet power transistor LS201N 5A JFET lovoltech no diode Text: www.Lovoltech.com PWRLITE-LS201N N-Channel Power JFET Transistor for Notebook Battery Applications Features Applications Description The JFET transistor from Lovoltech is an ideal switch for battery operated products. The device presents a Low Rdson allowing for	Original	PWRLITE-LS201N jfet transistor lovoltech PWRLITE-LS201N J-FET TRANSISTOR jfet power transistor LS201N 5A JFET lovoltech no diode	PDF
5962R8961002VHA Abstract: rh1499mw RH1009MH TID RADIATION TEST OF OP. AMP 5962R8961002VXC 1X10E12 RH6105 RH1014MW 5962R0920602 LDO spice model Text: SPACE QUALIFIED PRODUCTS SINGLE AMPLIFIERS Part type    3-Oct-12 LF198H LM101AH LM101AJ8 LM101AW RH101AH RH101AJ8 RH101AW RH101ADICE MSK0041RH MSK106RH OP07AH OP07AJ OP07H OP07J RH07H RH07J8 RH07W RH07DICE LM108AH LM108AJ LM108AJ8 LM108AW RH108AH	Original	LF198H LM101AH LM101AJ8 LM101AW RH101AH RH101AJ8 RH101AW RH101ADICE MSK0041RH MSK106RH 5962R8961002VHA rh1499mw RH1009MH TID RADIATION TEST OF OP. AMP 5962R8961002VXC 1X10E12 RH6105 RH1014MW 5962R0920602 LDO spice model	PDF
Motorola transistor smd marking codes Abstract: SMD TRANSISTOR MARKING 5c SMD code smd TRANSISTOR code marking 2F toshiba smd marking code transistor TRANSISTOR SMD MARKING CODE 1P smd transistor 5c Diode SOT-23 marking 15d SMD TRANSISTOR MARKING 6B TRANSISTOR SMD MARKING CODE 1d Text: Eugene Turuta 2 - pins SOT - 89 databook 3 - pins Acti ve Activ SMD components mar king codes marking Introduction SMD-codes for semiconductor components in 3-pins cases SMD-codes for semiconductor components in SOT-89 cases SMD-codes for semiconductor components in BGA and LPP cases	Original	OT-89 OT-223 C-120, 2001MD, Motorola transistor smd marking codes SMD TRANSISTOR MARKING 5c SMD code smd TRANSISTOR code marking 2F toshiba smd marking code transistor TRANSISTOR SMD MARKING CODE 1P smd transistor 5c Diode SOT-23 marking 15d SMD TRANSISTOR MARKING 6B TRANSISTOR SMD MARKING CODE 1d	PDF

APT1201R5BVFR Abstract: APT1201R5SVFR Text: APT1201R5BVFR APT1201R5SVFR 1.500Ω Ω 1200V 10A POWER MOS V TO-247 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®	Original	APT1201R5BVFR APT1201R5SVFR O-247 O-247 APT1201R5BVFR APT1201R5SVFR	PDF
SEMISOUTH Abstract: JFET semisouth SiC JFET semisouth JFET SJDP120R085 Text: ADVANCED INFORMATION SiC JFET ASJD1200R085 Normally-ON Trench Silicon Carbide Power JFET BVDS FEATURES: ProductSummary 1200 RDS ON max 0.085 V : ETS,typ TBD J Die Inside • Hermetic TO-257 Packaging • 200°C Maximum Operating Temperature (260oC Contact Factory)	Original	ASJD1200R085 O-257 260oC MIL-PRF-19500 MIL-STD-750 O-257 SJDP120R085 O-247 ASJD1200R085 SEMISOUTH JFET semisouth SiC JFET semisouth JFET	PDF
APT1201R5BFVR Abstract: APT1201R5BVFR APT1201R5SFVR Text: APT1201R5BFVR APT1201R5SFVR 1.500Ω Ω 1200V 10A POWER MOS V TO-247 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®	Original	APT1201R5BFVR APT1201R5SFVR O-247 O-247 APT1201R5BVFR APT1201R5BFVR APT1201R5SFVR	PDF
Untitled Abstract: No abstract text available Text: APT1201R5BVFR APT1201R5SVFR 1.500Ω Ω 1200V 10A POWER MOS V TO-247 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®	Original	APT1201R5BVFR APT1201R5SVFR O-247 O-247 APT1201R5BVFR	PDF
IEGT 4500V Abstract: IEGT trench static characteristics of mosfet and igbt mitsubishi igbt cm Text: Characteristics of a 1200V CSTBT Optimized for Industrial Applications Yoshifumi Tomomatsu, Shigeru Kusunoki, Katsumi Satoh, Junji Yamada, Yoshiharu Yu, John F. Donlon, Hideo Iwamoto, Eric R. Motto *Fukuryo Semicon Engineering Corporation, Fukuoka, Japan	Original		PDF
JFET semisouth Abstract: SEMISOUTH SiC JFET Text: ADVANCED INFORMATION SiC JFET ASJE1200R100 Normally-OFF Trench Silicon Carbide Power JFET BVDS FEATURES: RDS ON max 0.100 V : ETS,typ 170 J Die Inside • Hermetic TO-257 Packaging • 200°C Maximum Operating Temperature (for 260oC Contact Factory) • Available Screening:	Original	O-257 260oC MIL-PRF-19500 MIL-STD-750 ASJE1200R100 SJEP120R100 O-247 ASJE1200R100 JFET semisouth SEMISOUTH SiC JFET	PDF
ASJD1200R085 Abstract: SiC JFET SJDP120R085 JFET semisouth SEMISOUTH silicon carbide j-fet SJDP silicon carbide JFET JFET semisouth Semisouth, SJDP120R085 Text: ADVANCE INFORMATION SiC JFET ASJD1200R085 Normally-ON Trench Silicon Carbide Power JFET BVDS FEATURES: ProductSummary 1200 RDS ON max 0.085 V : ETS,typ TBD J Die Inside • Hermetic TO-258 Packaging • 200°C Maximum Operating Temperature (260oC Contact Factory)	Original	ASJD1200R085 O-258 260oC MIL-PRF-19500 MIL-STD-750 O-258 SJDP120R085 O-247 ASJD1200R085 SiC JFET JFET semisouth SEMISOUTH silicon carbide j-fet SJDP silicon carbide JFET JFET semisouth Semisouth, SJDP120R085	PDF
psp 1004 Abstract: No abstract text available Text: HIP0061 HARRIS S E M I C O N D U C T O R 60V, 3.5A, 3-Transistor C o m m o n So urce ESD Protected Po wer M O S F E T Array April 1997 Features Description • T h r e e 3>5A P o w e r M O S N - C h a n n e l T r a n s i s t o r s The HIP0061 is a power MOSFET array that consists of	OCR Scan	HIP0061 HIP0061 1-800-4-H psp 1004	PDF
Untitled Abstract: No abstract text available Text: • R r M APT6017WVR A d va n ced po w er Te c h n o l o g y 0.1 7a 600v 31 .sa POWER MOS V' Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®	OCR Scan	APT6017WVR O-267 APT6017W 00A/ps) IL-STD-750	PDF
muA741 Abstract: 220v ac to 12V 10A SMPS 220V 5A Automatic Voltage Regulator 220V Automatic Voltage Regulator operational amplifier LM234 ac 220V Automatic Voltage Regulator three terminal adjustable voltage regulator LM723 sgs lm723 LM318 regulator lm 471 Text: ALPHANUMERICAL INDEX Type Number Page Number Function AVS08 Automatic Mains Selector 110/220V AC for SMPS <200W . . . . 57 AVS10 Automatic Mains Selector (110/220V AC) for SMPS <300W . . . . 63 AVS12 Automatic Mains Selector (110/220V AC) for SMPS <500W . . . .	OCR Scan	AVS08 AVS10 AVS12 AVS20 C78L00CD L272D L272/M L296/P L297/A L298/N muA741 220v ac to 12V 10A SMPS 220V 5A Automatic Voltage Regulator 220V Automatic Voltage Regulator operational amplifier LM234 ac 220V Automatic Voltage Regulator three terminal adjustable voltage regulator LM723 sgs lm723 LM318 regulator lm 471	PDF

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5A JFET Search Results

5A JFET Result Highlights (5)

5A JFET Datasheets Context Search

Untitled

MAX713 equivalent

transistor CB 945

P-Channel Depletion Mode FET

P-Channel Depletion Mosfets

SEMISOUTH

Amplifiers

5-pin smd Voltage Regulators

ASJD1200R045

SiC JFET

Diode 400V 5A

jfet transistor

5962R8961002VHA

Motorola transistor smd marking codes

APT1201R5BVFR

SEMISOUTH

APT1201R5BFVR

Untitled

IEGT 4500V

JFET semisouth

ASJD1200R085

psp 1004

Untitled

muA741