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    5B2 DIODE Search Results

    5B2 DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    5B2 DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    5b2 diode

    Abstract: No abstract text available
    Text: IPP023N04N G Ie]R IPB023N04N G  3 Power-Transistor Product Summary Features Q฀& , -฀7@B฀(+:?8฀2?5฀.?:?D6BBEAD:3=6฀ @G6B฀,EAA=I฀ V 9H ,( K R ,@?>2H฀ *&+ Z I9 1( 6 )# Q฀*E2=:7:65฀244@B5:?8฀D@฀$ ฀7@B฀D2B86D฀2AA=:42D:@?C


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    PDF IPP023N04N IPB023N04N D2B86Dà D6CD65 D96BG 5b2 diode

    Untitled

    Abstract: No abstract text available
    Text: Je]R BSZ520N15NS3 G TM  3 Power-Transistor Product Summary Features Q฀ AD:>:J65฀7@B฀54 54฀4@?F6BC:@? Q฀ 492?6=฀?@B>2=฀=6F6= V 9I )-( K R 9I"\[#$ZNd -* Z I9 *) 6 Q฀H46=6?D฀82D6฀492B86฀H฀R 9I"\[#฀AB@5E4D฀ )' Q฀&@G฀@? B6C:CD2?46฀R 9I"\[#


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    PDF BSZ520N15NS3 492B86à D2B86Dà D96BG

    BSZ520N15NS3

    Abstract: marking 6B s4si 6B104 I6025 marking a6b
    Text: Je]R BSZ520N15NS3 G TM "%&$!"# 3 Power-Transistor Product Summary Features Q AD:> :J65 7@B 54 54 4@? F6BC:@? Q 492 ? ? 6=  ? @B> 2 = 6F6= V 9I )-( K R 9I"\[#$ZNd -* Z" I9 *) 6 Q  H46= = 6? D82 D6 492 B86 HR 9I"\[# AB@5E4D ) '  Q& @G @? B6C:CD2 ? 46 R 9I"\[#


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    PDF BSZ520N15NS3 marking 6B s4si 6B104 I6025 marking a6b

    5B1 IR

    Abstract: H5007 MAX4890 MAX4890ETJ MAX4891 MAX4891ETJ MAX4892 MAX4892ETX 0B227
    Text: 19-3577; Rev 2; 8/07 10/100/1000 Base-T Ethernet LAN Switch The MAX4890/MAX4891/MAX4892 high-speed analog switches meet the needs of 10/100/1000 Base-T applications. These devices switch the signals from two interface transformers and connect the signals to a single 10/100/1000 Base-T Ethernet PHY, simplifying


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    PDF MAX4890/MAX4891/MAX4892 MAX4891/MAX4892 respe0/100/1000 MAX4890/MAX4891/MAX4892 5B1 IR H5007 MAX4890 MAX4890ETJ MAX4891 MAX4891ETJ MAX4892 MAX4892ETX 0B227

    6B2 diode

    Abstract: PI3V712-A 5b2 diode Diode 6b2
    Text: PI3V712-A 3.3V, 7-Channel Analog Video Switch with Dual Control Logic Features Description • Designed specifically to switch VGA signals • 7-Channels for VGA signals R,G,B, Hsync, Vsync, DDC Dat, and DDC CLK • 1st SEL can control RGBHV signals and 2nd SEL can control


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    PDF PI3V712-A IEC61000-4-2 -44dB 32-contact 28-contact PI3V712-A 32-Pin 32-contact, PD-2044 6B2 diode 5b2 diode Diode 6b2

    5b1 transistor

    Abstract: transistor 5B1 5B1 IR 6B2 transistor 40 TQFN 5x5 6B1 transistor MAX4890 MAX4890ETJ MAX4891 MAX4891ETJ
    Text: 19-3577; Rev 1; 8/05 10/100/1000 Base-T Ethernet LAN Switch The MAX4890/MAX4891/MAX4892 high-speed analog switches meet the needs of 10/100/1000 Base-T applications. These devices switch the signals from two interface transformers and connect the signals to a single 10/100/1000 Base-T Ethernet PHY, simplifying


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    PDF MAX4890/MAX4891/MAX4892 MAX4891/MAX4892 MO220, T4866-1. 5b1 transistor transistor 5B1 5B1 IR 6B2 transistor 40 TQFN 5x5 6B1 transistor MAX4890 MAX4890ETJ MAX4891 MAX4891ETJ

    RJ45 LED

    Abstract: 6B2 transistor A7188 6B1 transistor MAX4890 MAX4890ETJ MAX4891 MAX4891ETJ MAX4892 MAX4892ETX
    Text: 19-3577; Rev 0; 2/05 10/100/1000 Base-T Ethernet LAN Switch The MAX4890/MAX4891/MAX4892 high-speed analog switches meet the needs of 10/100/1000 Base-T applications. These devices switch the signals from two interface transformers and connect the signals to a single 10/100/1000 Base-T Ethernet PHY, simplifying


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    PDF MAX4890/MAX4891/MAX4892 MAX4891/MAX4892 MO220, T4866-1. RJ45 LED 6B2 transistor A7188 6B1 transistor MAX4890 MAX4890ETJ MAX4891 MAX4891ETJ MAX4892 MAX4892ETX

    6B2 diode

    Abstract: 5b2 diode PI3HDMI412-B TMDS PI3HDMI412-BAE Dvi CONNECTION DIAGRAM PI3HDMI 6b1a7
    Text: PI3HDMI412-B 4-Differential Channel, 2:1 Mux/DeMux, DVI/HDMI Compliant Signal Switch based on TMDS Signaling Standard Features Description • 3.3V VDD • 4-Differential Channel 2:1 Mux/DeMux • DVI, HDMI, 1.2 +1.2 signal compatible • Data Rate: 1.65Gbps


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    PDF PI3HDMI412-B 65Gbps -35dB 825MHz -30dB 250ps --48-pin 65Gbps 48-pin 6B2 diode 5b2 diode PI3HDMI412-B TMDS PI3HDMI412-BAE Dvi CONNECTION DIAGRAM PI3HDMI 6b1a7

    PI3LVD512

    Abstract: PI3LVD512ZFE PS8979B PI3LVD512ZHE HP4396B MO-220 PD-2024 ZF56 lvds switch 9b1 diode
    Text: PI3LVD512 3.3V, 5-differential Channel LVDS Switch Targeted for 24bit Displays Features Description • • • • • • Pericom’s PI3LVD512 is a 5-differential channel LVDS mux/ demux used to switch between multiple LVDS sources or end points. In a notebook application where analog video signals


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    PDF PI3LVD512 24bit PI3LVD512 870MHz, MO-220 42-contact PD-2035 PI3LVD512ZFE 56-pin PI3LVD512ZHE PI3LVD512ZFE PS8979B PI3LVD512ZHE HP4396B MO-220 PD-2024 ZF56 lvds switch 9b1 diode

    C3979

    Abstract: 65a3 ISL9504 Apple K23 MLB c5296 77A5 PP3V42G3H 65C6 ar9350 PP3V42
    Text: 8 6 7 2 3 4 5 1 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV SCHEM,MLB,M59 ZONE ECN A ENG APPD DESCRIPTION OF CHANGE 463525 PRODUCTION RELEASE


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    TLP722

    Abstract: TLP722F E67349 VDE0884
    Text: TLP722 TOSHIBA Photocoupler Photo−Diode TENTATIVE TLP722 Unit in mm The TOSHIBA TLP722 consists of a photo−diode optically coupled to a gallium arsenide infrared emitting diode in a four lead plastic DIP DIP4 . TLP722: Single circuit • Cathode−anode voltage: 30V (max)


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    PDF TLP722 TLP722 TLP722: 4000Vrms UL1577, E67349 VDE0884 890VPK 8000VPK TLP722F E67349 VDE0884

    CBT3383

    Abstract: SN74CBT3383C SN74CBT3383CDBQR SN74CBT3383CDBR SN74CBT3383CDW SN74CBT3383CDWR C101
    Text: SN74CBT3383C 10ĆBIT FET BUSĆEXCHANGE SWITCH 5ĆV BUS SWITCH WITH -2ĆV UNDERSHOOT PROTECTION SCDS175 − SEPTEMBER 2004 D Undershoot Protection for Off-Isolation on D D D D D D D D D D D D DB, DBQ, DGV, DW, OR PW PACKAGE TOP VIEW A and B Ports Up to −2 V


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    PDF SN74CBT3383C 10BIT SCDS175 CBT3383 SN74CBT3383C SN74CBT3383CDBQR SN74CBT3383CDBR SN74CBT3383CDW SN74CBT3383CDWR C101

    2.2nf capacitor

    Abstract: IEC-61000-4-2 JESD97 STMUX3040 TQFN42
    Text: STMUX3040 Octal SPDT high bandwidth signal switch Features • Supports PCIExpress signaling at 2.5Gbps ■ Supports 3.0Gbps generic data rate ■ Octal SPDT switch to support 2 PCI lanes ■ Low Ron: 5.5Ω typical ■ Internal voltage regulator ■ VCC operating range


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    PDF STMUX3040 250ps 1200MHz -20dB 2.2nf capacitor IEC-61000-4-2 JESD97 STMUX3040 TQFN42

    SO56-2

    Abstract: 11A2 11B2 Diode 9b2 diode diode 1a2 10A1 10A2 11A1 12A1 12A2
    Text: IDTQS316212 HIGH-SPEED CMOS 24-BIT BUS-EXCHANGE SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS HIGH-SPEED CMOS 24-BIT BUS-EXCHANGE SWITCH DESCRIPTION: FEATURES: − − − − − Enhanced N channel FET with no inherent diode to Vcc Low propagation delay


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    PDF IDTQS316212 24-BIT 56-pin QS316212 12-bit O56-1) SO56-2 11A2 11B2 Diode 9b2 diode diode 1a2 10A1 10A2 11A1 12A1 12A2

    Untitled

    Abstract: No abstract text available
    Text: SN74CBT3383C 10ĆBIT FET BUSĆEXCHANGE SWITCH 5ĆV BUS SWITCH WITH -2ĆV UNDERSHOOT PROTECTION SCDS175 − SEPTEMBER 2004 D Undershoot Protection for Off-Isolation on D D D D D D D D D D D D DB, DBQ, DGV, DW, OR PW PACKAGE TOP VIEW A and B Ports Up to −2 V


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    PDF SN74CBT3383C 10BIT SCDS175 MTSS001C 4040064/F MO-153

    Untitled

    Abstract: No abstract text available
    Text: TLP722 TOSHIBA Photocoupler Photo−Diode TLP722 Unit in mm The TOSHIBA TLP722 consists of a photo−diode optically coupled to a gallium arsenide infrared emitting diode in a four lead plastic DIP DIP4 . TLP722: Single circuit • Cathode−anode voltage: 30V (max)


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    PDF TLP722 TLP722 TLP722: 4000Vrms UL1577, E67349 EN60747-5-2 890VPK 8000VPK

    PS8809

    Abstract: 5b2 diode PI3HDMI
    Text: PI3HDMI412-B 4-Differential Channel, 2:1 Mux/DeMux, DVI/HDMI Compliant Signal Switch based on TMDS Signaling Standard Description Features • 3.3V VDD • 4-Differential Channel 2:1 Mux/DeMux • TMDS Signaling • Data Rate: 1.65Gbps • Crosstalk: -35dB@825MHz


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    PDF PI3HDMI412-B 65Gbps -35dB 825MHz -30dB 250ps --48-pin 48-pin PI3HDMI412-BAE PS8809 5b2 diode PI3HDMI

    PI2LVD412

    Abstract: hp11667a 11667A HP4396B lvds MUX/DEMUX 54046A PI2LVD412ZHE
    Text: PI2LVD412 1.8V, LVDS Compliant, 4 Differential Channel, 2:1 Mux/DeMux Switch w/Single Enable Features Description • • • • • • • • • Pericom Semiconductor’s PI2LVD412 is an 8-to-4 differential channel multiplexer/demultiplexer switch. The device is bidirectional and designed specifically for Low Voltage Differential


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    PDF PI2LVD412 PI2LVD412 -77dB -68dB PS8806A 42-Contact PD-2035 PI2LVD412ZHE hp11667a 11667A HP4396B lvds MUX/DEMUX 54046A PI2LVD412ZHE

    siemens igbt BSM 200 GA 120

    Abstract: siemens igbt BSM 300 siemens igbt BSM 200 GA 100 siemens igbt BSM 100
    Text: bDE T> m 023SbQ5 GG4SCU E 5b2 « S I E G SIEMENS S X E K N S AKTIENSESELLSCHAF 7 IGBT Module Preliminary Data ^ ? - ^ 5 " BSM 200G A120D VCE = 1200 V / C = 275 A at Tc= 25 C / c =200 A at r c = 80 C • • • • • Power module Single switch Including fast free-wheel diodes


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    PDF 0235fc GG4SC11E C67076-A2006-A2 siemens igbt BSM 200 GA 120 siemens igbt BSM 300 siemens igbt BSM 200 GA 100 siemens igbt BSM 100

    5B2 rectifier

    Abstract: 5b2 diode
    Text: M Ö 55452 International SæJ Rectifier D D lS b fiö 5b2 i IN R IRFR310 IRFU310 HEXFET Power M O SFET • • • • • • • PD-9.597A IN T E R N A T IO N A L Dynamic dv/dt Rating Repetitive Avalanche Rated Surface Mount IRFR310 Straight Lead (IRFU310)


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    PDF IRFR310 IRFU310 IRFR310) IRFU310) IRFR310. 5B2 rectifier 5b2 diode

    Untitled

    Abstract: No abstract text available
    Text: K n o x S e m ic o n d u c t o r , I n c . These low voltage avalanche diodes exhibit considerably sharper breakdown and lower leakage current characteristics than other regulator diodes in the 4 - 1 0 volt range. SHARP BREAKDOWN, LOW LEAKAGE LVA REGULATOR DIODES


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    PDF LVA43A LVA100A LVA43A LVA47A LVA51A LVA56A LVA62A LVA68A LVA75A LVA82A

    5b2 diode

    Abstract: specification diode BY 127 diode BY 127 SPECIFICATION BB130 diode
    Text: Philips Semiconductors Product specification AM variable capacitance diode BB130 FEATURES • Matched to 3% k • Leaded plastic package • C28: 18 pF; ratio: 27. - ' - 1 3 -Ih MAM222 APPLICATIONS Fig. 1 Simplified outline {SOD69; TO-92 variant and symbol.


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    PDF BB130 BB130 MAM222 01GS31S 5b2 diode specification diode BY 127 diode BY 127 SPECIFICATION diode

    Untitled

    Abstract: No abstract text available
    Text: N AUER P H IL IP S /D IS C R E T E bTE D b b S B ^ l □Q2b‘173 b2b • APX Philips Semiconductors Preliminary specification Schottky barrier diode FEATURES • Low leakage current BAT56 QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MAX. UNIT 60 V • Ultra-fast switching speed.


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    PDF BAT56

    Untitled

    Abstract: No abstract text available
    Text: S OLI D STATE DE VI CE S g g { g | S o l i d 1EE I NC S t a t e 14830 Valley View Avenue D e v ic e s , D |fl3 h b D ll DDCIl fl b? fl I n c o r p o r a t e d | ¿ B ilik La Mirada, California 90638 • Telephone: 213) 921-9660 • T W X 910-583-4807 NEW EPION ION-IMPLANTED DIODES NOW AVAILABLE FROM SSDI


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    PDF 15/1B HSA/18