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    T039 package

    Abstract: UF2801KI rf power mosfet
    Text: M/ A- COri P H 0 4ÔE D • 5b422G5 GG0G7G1 13T ■ NAP 7" - 5 ^ UF2801KI N -C h an n e l RF Power MOSFET Features • DMOS Structure • Lower Capacitances for Broadband Operation • Lower Noise Floor • 100 MHz to 500 MHz Operation •• Common Source T 0 3 9 Package Configuration ••


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    PDF UF2801KI T039 package rf power mosfet

    Untitled

    Abstract: No abstract text available
    Text: A$A Avionics Pulsed Power Transistor PH 1090-30S Preliminary 30 Watts, 1030-1090 MHz, 10 |is Pulse, 1% Duty Features Outline Drawing • Designed for Short Pulse IFF Applications • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation


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    PDF 1090-30S 5b422G5 GQG12D5

    transistor 45 f 122

    Abstract: capacitor 4.7 uF electrolytic capacitor 47 transistor 975
    Text: Avionics Pulsed Power Transistor A ß PH0912-75 Preliminary 75 Watts, 960-1215 MHz, 7 ¿is Pulse, 50% Duty Features • • • • • • • • • Outline Drawing Designed for JTIDS Applications NPN Silicon Microwave Power Transistor Common Base Configuration


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    PDF PH0912-75 5b422G5 DDG11 Sb42205 transistor 45 f 122 capacitor 4.7 uF electrolytic capacitor 47 transistor 975