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    5BP TRANSISTOR Search Results

    5BP TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    5BP TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    small signal transistor MOTOROLA

    Abstract: w21 transistor MOTOROLA small signal transistor 2N3821JTX PHW4101 FIDL 5Bp transistor MOTOROLA TRANSISTOR
    Text: MOTOROU Orderthis document by2N3621JTND SEMICONDUCTOR TECHNICAL DATA ● 2N3821JTX, JANS Processed per MlL4-19500/375 N4hannel, Depletion Mode Junction Field-Effect Transistor JFETs .designed for small-ignal, Iowoise amplifier applications. * ~,)> . .$$”


    Original     		by2N3621JTND 2N3821JTX, MlL4-19500/375 TM06AF 2N3821JTX PHW4101 2Ns21JmD small signal transistor MOTOROLA w21 transistor MOTOROLA small signal transistor FIDL 5Bp transistor MOTOROLA TRANSISTOR PDF

    2C918HV

    Abstract: chip die npn transistor
    Text: MOTOROM Orderthis document by 2C818HVD SEMICONDUCTOR TECHNICAL DATA e 2C918HV Chip NPN Silicon Smal14ignal Transistor ,. .deeigned for VHF operation .11 in tuned amptifier/oscillator applications. ● SmalHgnal Power Gain — 15 dB Min @ 200 MHz . Noise Figure — 6.0 dB Max@ 60MHz


    Original     		2C818HVD 2C918HV Smal14ignal 60MHz 10x15 10aim 2C91W/D chip die npn transistor PDF

    5Bp transistor

    Abstract: 2C2369AHV IPHW41011-2 2c2369 transistor data 3150 chip die npn transistor
    Text: -––. .-. .-– .— MOTOROU e Ordertils document bv 2C2369AWID SEMICONDUCTOR TECHNICAL DATA 2C2369AHV Chip NPN Silicon Small+ignal Transistor . . .deeignedfor genera~urpose I , ~~ ‘:.,t,l?. ,Y. .,.,. switching applications. Rating I Physical Characteristics:


    Original     		2C2369AWID 2C2369AHV 15x15 2C2369AHV IPHW41011-2 2C2369AHVID 5Bp transistor 2c2369 transistor data 3150 chip die npn transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: BC807 BC808 _ SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors, in a SOT-23 plastic package fo r use in driver and ou tp u t stages o f aufio amplifiers in thick and thin -film hybrid circuits. N-P-N complements are BC817; R and BC818; R respectively.


    OCR Scan     		BC807 BC808 OT-23 BC817; BC818; BC807-16 BC808-16 BC807-25 PDF

    w21 transistor

    Abstract: 2C3251AHV 2C3X AICB
    Text: MOTOROU Order this dooument by 2C3251AHV/D SEMICONDUCTOR TECHNICAL DATA o 2C3251AHV Chip . PNP Silicon Small-Signal Transistor III ,~4 , ~ti m - I Rating E o ELECTRICAL CHARACTE~@~,@UA = 25°C unlessOthetise noted.) Chamdu*$:# symbol I Mln Max I Unit OFF CHARACTERISll&$j?;!


    Original     		2C3251AHV/D 2C3251AHV 1500C) 1PHW4101 w21 transistor 2C3X AICB PDF

    2C3439HV

    Abstract: 650C
    Text: MOTOROM Order this document by 2CW9HWD SEMICONDUCTOR TECHNICAL DATA o ft. b-. ,.;y.,;~,?. .,.,~, .’, , Ill. ,$tlt , il[ill’ y, 2C3439HV Chip NPN Silicon Srnall+ignal Transistor . designed ~o for highvoltage, higburrent appliostions in switching and amplifier service.


    Original     		2C3439HV 2C3439HV 1PHX241011-2 650C PDF

    2C3019HV

    Abstract: 5Bp transistor Transistor 5bp
    Text: MOTOROU Order ~le document by2C3019HV/D SEMICONDUCTOR TECHNICAL DATA e 2C3019HV Chip NPN Silicon Small*ignaI Transistor .deeigned for dc to VHF ampfifier applications and general+urpose switching. . V BR CEO = 80 Vdc . hFE = 100 Min @ 150 mAdc . VCE(sat) = 0.2 Vdc Ma @ 150 mAdc


    Original     		by2C3019HV/D 2C3019HV 2CW19HVID 1PHW4101 5Bp transistor Transistor 5bp PDF

    2C2605HV

    Abstract: raon
    Text: MOTOROU . Orderthis document by 202605HVID SEMICONDUCTOR TECHNICAL DATA @ 2C2605HV Chi~ PNP Silicon Low+oise Amplifier Transistor . . .deaigned for hig~ain, ● Iowoise ,111, ,11 ,11 a ~ amplfier applications. N.F-= 5.0 dB @ 100 H, “3.0 dB @ 10 kHz MAXIMUM RATINGS


    Original     		202605HVID 2C2605HV raon PDF

    2N3634 MOTOROLA

    Abstract: m21 transistor 2N3634 2N3637 transistor m21 MIL-19500 2N3634JTX 2N3635 2N3635JTX 2N3636
    Text: MOTOROU Orderth18 document by2N3WWD SEMICONDUCTOR TECHNICAL DATA o 2N3634JTX, 2N3635JTX, 2N3636JTX, 2N3637JTX, JTXV JTXV, JANS JTXV, JANS JTXV, JANS Processed per MIL+-19500/357 PNP Silicon SmallSignal o General-Purpose Transistor Ic Collector Current,Maimurn


    Original     		Orderth18 2N3634JTX, 2N3635JTX, 2N3636JTX, 2N3637JTX, CHARACTERlST19 2N3634, 2N3635 2N3636, 2N3637 2N3634 MOTOROLA m21 transistor 2N3634 2N3637 transistor m21 MIL-19500 2N3634JTX 2N3635 2N3635JTX 2N3636 PDF

    transistor 5cp

    Abstract: 5Bp transistor 5Cp transistor 5DP transistor BC808 sot23 5bp 5bp sot23
    Text: Philips Semiconductors Product specification PNP general purpose transistors BC807; BC808 FEATURES PINNING • High current max. 500 mA PIN • Low voltage (max. 45 V). APPLICATIONS DESCRIPTION 1 base 2 emitter 3 collector • General purpose switching and amplification.


    OCR Scan     		BC807; BC808 BC817 BC818. BC807 BC807-16 BC807-25 BC807-40 BC808 BC808-16 transistor 5cp 5Bp transistor 5Cp transistor 5DP transistor sot23 5bp 5bp sot23 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by BFR93ALT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon HighĆFrequency Transistors BFR93ALT1 . . . designed primarily for use in high-gain, low-noise, small-signal UHF and microwave amplifiers constructed with thick and thin-film circuits using surface


    Original     		BFR93ALT1/D BFR93ALT1 PDF

    2N3501 MOTOROLA

    Abstract: 2N3501 k5c transistor 2N3501JAN AICB
    Text: MOTOROU Orderthls document by 2N3501JANID SEMICONDUCTOR TECHNICAL DATA 2N3501JAN, JTX, JTXV, JANS Processed per MIL4-195001366 NPN Silicon SmallSignal Transistors .designed for genera~urpose switching and amplifier applications in hig~voltage .,!.\ ELECTRICAL


    Original     		2N3501JANID 2N3501JAN, MIL4-195001366 lPHX241011-2 2N3501 2N3501 MOTOROLA k5c transistor 2N3501JAN AICB PDF

    2N3506

    Abstract: 2N3507 2N3506JTX 2N3506 MOTOROLA 2N3507JTX 2NW06 15-ADO
    Text: MOTOROU Orderthis dooument bv2N850WWD SEMICONDUCTOR TECHNICAL DATA 2N3506JTX, JTXV 2N3507JTX, JTXV Processed per MIL+-~9500/349 NPN Silicon Small+ ignal Transistors . . designed for genera~urpose switchingapplications. .,. ,. CASE 7W TM05AD r- mntinued)


    Original     		bv2N850WWD 2N3506JTX, 2N3507JTX, TM05AD 2NW06 2NW07 300Vdc) 2N3506 1PHW41011-2 2NS50MWD 2N3506 2N3507 2N3506JTX 2N3506 MOTOROLA 2N3507JTX 15-ADO PDF

    M036

    Abstract: 2N3251AJAN PHM4101
    Text: MOTOROW Order this document SEMICONDUCTOR TECHNICAL DATA by 2N3251AJAN/D e 2N3251AJAN, JTX Processed per MIL4-195001323 PNP Silicon Smal14ignal Transistors .designed for genera~urpose switching and amplifier applications. CASE 22*, TM06AA .,4., , ‘, ELECTRICAL CHARACTERlSTl~~#*25°C


    Original     		2N3251AJAN/D 2N3251AJAN, MIL4-195001323 Smal14ignal TM06AA PHM4101 2N3251AJANID M036 2N3251AJAN PDF

    2N3440 MOTOROLA

    Abstract: 2n3439 motorola MOTOROLA 2N3440 2N3439 LF036 Y14W 5bp 2n 2N3439JAN 2N3440 2N3440JTX
    Text: MOTOROU Orderthls document by 2N3439JANID SEMICONDUCTOR TECHNICAL DATA o 2N3439JAN, JTX, JTXV 2N3440JTX, JTXV Processed per MIL4-I 9500/368 NPN Silicon Small+ignal Transistors .designed for tighvoltage amplifier applications. MAXIMUM RATINGS Rsttng Symbol


    Original     		2N3439JANID 2N3439JAN, 2N3440JTX, 1PHW4101 2N3439JAN/D 2N3440 MOTOROLA 2n3439 motorola MOTOROLA 2N3440 2N3439 LF036 Y14W 5bp 2n 2N3439JAN 2N3440 2N3440JTX PDF

    2N2219A MOTOROLA

    Abstract: 2N2219A 2N2219AJAN 4101 transistor
    Text: MOTOROU SEMICONDUCTOR TECHNICAL DATA Order this document by 2N2219AJANID a 2N2219AJAN, JTX, JTXV, JANS Processed per MIL4-I 9500/251 NPN Silicon Small-ignal Transistors ., designed for genera~urpose switching and amplifier applications. CASE7$M, SWLE 1 T0205AD ~039


    Original     		2N2219AJANID 2N2219AJAN, T0205AD 2N22d9A 2N2219AJAN/D 2N2219A MOTOROLA 2N2219A 2N2219AJAN 4101 transistor PDF

    Q2N44

    Abstract: 06AF 2N44 motorola MN transistor 2N4416AJTX
    Text: MOTOROU Order this document by2N416AJTWD SEMICONDUCTOR TECHNICAL DATA o 2N4416AJTX, JTXV Processed per MlL-l 9500/428 N+hannel, Small+ignal Field Effect Transistor CASE 2W3, T=06AF .:’.~{.3” ELECTRICAL CHARACTERISTICS WA= #~@& *\A .*.<* Characterlstlc ., “$}$,w


    Original     		by2N416AJTWD 2N4416AJTX, 1PHW4101 2N4416AJWD Q2N44 06AF 2N44 motorola MN transistor 2N4416AJTX PDF

    w21 transistor

    Abstract: 2N3764 2N3764JTX MIL-19500 MOTOROLA LON motorola MN transistor Motorola transistor 358
    Text: . MoToRom Order this document by 2N3764~WD SEMICONDUCTOR TECHNICAL DATA ● 2N3764JTX, JTXV, JANS Processed per MIL+-19500/396 PNP Silicon Smal14ignal Transistor .designed for genera~urpose switching applications. ● Emtisr+ase Vohge * Colleotor Current — Cotinuous


    Original     		2N3764 2N3764JTX, Smal14ignal TW06AB 1PHW4101 2N37WTWD w21 transistor 2N3764JTX MIL-19500 MOTOROLA LON motorola MN transistor Motorola transistor 358 PDF

    Untitled

    Abstract: No abstract text available
    Text: • bbS3T31 Q03M43C5 07T « A P X N AUER PHILIPS/DISCRETE BC807 BC808 b7E 3> y v . SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors, in a SOT-23 plastic package for use in driver and output stages of aufio amplifiers in thick and thin-film hybrid circuits.


    OCR Scan     		bbS3T31 Q03M43C BC807 BC808 OT-23 BC817; BC818; BC807-25 PDF

    code marking 5Cp sot-23

    Abstract: bc807 BC807-16 BC807-25 BC807-40 BC808 BC808-16 BC808-25 BC817 BC818
    Text: • bbSB^ai □□2443’ì D7T M A R X N AUER PHILIPS/DISCRETE BC807 BC808 b7E J> SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors, in a SOT-23 plastic package fo r use in driver and ou tput stages o f aufio amplifiers in th ick and th ln -film hybrid circuits.


    OCR Scan     		BC807 BC808 OT-23 BC817; BC818; OT-23. 35MHz code marking 5Cp sot-23 bc807 BC807-16 BC807-25 BC807-40 BC808 BC808-16 BC808-25 BC817 BC818 PDF

    TP5015

    Abstract: NT 407 F TRANSISTOR
    Text: MOTOROLA Order this document by TP5015/D SEMICONDUCTOR TECHNICAL DATA The RF Line UHF Linear Power Transistor TP5015 . . . designed for 24 Volt UHF large–signal common emitter amplifier applications in industrial and commercial FM equipment operating in the 380 to


    Original     		TP5015/D TP5015 TP5015/D* TP5015 NT 407 F TRANSISTOR PDF

    mrf1032

    Abstract: motorola rf Power Transistor MOTOROLA POWER TRANSISTOR J 325 MOTOROLA TRANSISTOR 726 Common emitter amplifier case 244-04
    Text: MOTOROLA Order this document by MRF1032/D SEMICONDUCTOR TECHNICAL DATA The RF Line UHF Power Transistor MRF1032 . . . designed primarily for large–signal output and driver amplifier stages to 1.0 GHz. • Designed for Class A Linear Power Amplifiers • Specified 25 Volt, 900 MHz Characteristics:


    Original     		MRF1032/D MRF1032 MRF1032/D* mrf1032 motorola rf Power Transistor MOTOROLA POWER TRANSISTOR J 325 MOTOROLA TRANSISTOR 726 Common emitter amplifier case 244-04 PDF

    BC807C

    Abstract: No abstract text available
    Text: BC807 BC808 SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors, In a SO T-23 plastic package fo r use in d rive r and o u tp u t stages o f audio am p lifie rs in th ic k and th in -film h y b rid circuits. N-P-N com plem ents are BC817, R and BC818; R respectively.


    OCR Scan     		BC807 BC808 BC817, BC818; BC808 BC807; BC807-16 BC808-16 BC807C PDF

    MHW6142

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL Order this document by MHW614ZD DATA . @ ?;~%&CATVAmpiifier . designed specifically for 550 MHz CATV applications. Features ion-im- MHW6142 planted arsenic emitier transistors with7.0 GHzfTand anallgold metallization system.


    Original     		MHW614ZD MHW6142 2091Z MHW6142 PDF