Untitled
Abstract: No abstract text available
Text: 5J311,5J311 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT 5J311, 5J311(SM) HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Unit: mm z Third-generation IGBT z Enhancement mode type z High speed : tf = 0.30 s (Max.) (IC = 5A)
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GT5J311
GT5J311,
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5j311
Abstract: GT5J311 marking code SM diode
Text: 5J311,5J311 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT 5J311, 5J311(SM) Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Third-generation IGBT Enhancement mode type High speed : tf = 0.30µs (Max.) (IC = 5A)
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Original
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GT5J311
GT5J311,
5j311
marking code SM diode
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PDF
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Untitled
Abstract: No abstract text available
Text: 5J311,5J311 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT 5J311, 5J311(SM) HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Unit: mm z Third-generation IGBT z Enhancement mode type z High speed : tf = 0.30µs (Max.) (IC = 5A)
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GT5J311
GT5J311,
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GENERAL SEMICONDUCTOR MARKING SM
Abstract: toshiba code igbt GT5J311 General Semiconductor SM
Text: 5J311,5J311 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT 5J311, 5J311(SM) HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Unit: mm z Third-generation IGBT z Enhancement mode type z High speed : tf = 0.30 s (Max.) (IC = 5A)
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Original
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GT5J311
GT5J311,
GENERAL SEMICONDUCTOR MARKING SM
toshiba code igbt
General Semiconductor SM
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