5SLX12F1200 Search Results

5SLX12F1200 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
5SLX12F1200		ABB Semiconductors			Original	PDF

5SLX12F1200 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: VCE IC = = 1200 V 75 A IGBT-Die 5SMX 12K1262 Die size: 11.0 x 11.0 mm Doc. No. 5SYA 1630-00 Feb. 05 • Low loss, rugged SPT technology • Smooth switching for good EMC • Large bondable emitter area Maximum rated values Parameter Collector-emitter voltage	Original	PDF	12K1262 CH-5600
Untitled Abstract: No abstract text available Text: 9& ,& 9 $ ,%7'LH 60;. 'LH VL]H [ PP Doc. No. 5SYA1608-01 Aug 02 /RZ ORVV WKLQ ,%7 GLH +LJKO\ UXJJHG 637 GHVLJQ /DUJH IURQW ERQGDEOH DUHD 0D[LPXP 5DWHG 9DOXHV 3DUDPHWHU Collector-Emitter Voltage (Tj = 25°C, unless specified otherwise	Original	PDF	5SYA1608-01 5SYA2033-01 CH-5600
12K12 Abstract: 5SLX12F1200 Text: VCE IC = = 1200 V 75 A IGBT-Die 5SMX 12K1273 Die size: 11.0 x 11.0 mm Doc. No. 5SYA 1633-00 June 05 • • • • • Low loss, rugged SPT technology Smooth switching for good EMC Minimized gate charge, short delay times Optimized for paralleling Large bondable emitter area	Original	PDF	12K1273 CH-5600 12K12 5SLX12F1200
Untitled Abstract: No abstract text available Text: VCE IC = = 1200 V 75 A IGBT-Die 5SMX 12K1280 PRELIMINARY Die size: 11.0 x 11.0 mm Doc. No. 5SYA1308-01 Aug 08 • • • • • Low loss, rugged SPT technology Smooth switching for good EMC Large bondable emitter area Passivation: Silicon Nitride plus Polyimide	Original	PDF	12K1280 5SYA1308-01 CH-5600
Untitled Abstract: No abstract text available Text: VCE IC = = 1200 V 75 A IGBT-Die 5SMX 12K1274 Die size: 11.0 x 11.0 mm Doc. No. 5SYA 1303-00 Dec 07 • • • • • Low loss, rugged SPT technology Smooth switching for good EMC Minimized gate charge, short delay times Optimized for paralleling Large bondable emitter area	Original	PDF	12K1274 CH-5600
Untitled Abstract: No abstract text available Text: 9& ,& 9 $ ,%7'LH 60; . 'LH VL]H [ PP Doc. No. 5SYA 1617-02 July 03 • /RZ ORVV WKLQ ,%7 GLH • +LJKO\ UXJJHG 637 GHVLJQ • /DUJH IURQW ERQGDEOH DUHD 0D[LPXP UDWHG YDOXHV 3DUDPHWHU Collector-emitter voltage 6\PERO &RQGLWLRQV	Original	PDF	CH-5600
Untitled Abstract: No abstract text available Text: VCE IC = = 1200 V 75 A IGBT-Die 5SMX 12K1280 Die size: 11.0 x 11.0 mm Doc. No. 5SYA1308-03 04 14 •     Low loss, rugged SPT technology Smooth switching for good EMC Large bondable emitter area Passivation: Silicon Nitride plus Polyimide Optimized for high DC-link voltage applications	Original	PDF	12K1280 5SYA1308-03 CH-5600