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    5SLX12L2510 Search Results

    5SLX12L2510 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    5SLX 12L2510 ABB Semiconductors Original PDF
    5SLX12L2510 ABB Semiconductors Fast-Diode Die Original PDF

    5SLX12L2510 Datasheets Context Search

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    IGBT abb

    Abstract: 5SLX12L2510 a7050 V15C
    Text: VCE IC = = 2500 V 50 A IGBT-Die 5SMX 12L2510 Die size: 12.4 x 12.4 mm Doc. No. 5SYA 1622-03 Sep 05 • • • • Low loss, rugged SPT technology Smooth switching for good EMC Large bondable emitter area Passivation: SIPOS and Silicon Nitride plus Polyimide


    Original     		PDF 12L2510 CH-5600 IGBT abb 5SLX12L2510 a7050 V15C

    162201

    Abstract: 5SLX12L2510
    Text: 9& ,&  9  $ ,*%7'LH 60; / 35(/,0,1$5< 'LH VL]H  [  PP Doc. No. 5SYA 1622-01 Nov.03 • • • • /RZ ORVV WKLQ ,*%7 GLH +LJKO\ UXJJHG 637 GHVLJQ /DUJH ERQGDEOH HPLWWHU DUHD 3DVVLYDWLRQ 6,326 DQG 6LOLFRQ 1LWULGH SOXV 3RO\LPLGH 0D[LPXP UDWHG YDOXHV  


    Original     		PDF CH-5600 162201 5SLX12L2510

    Untitled

    Abstract: No abstract text available
    Text: VCE IC = = 2500 V 50 A IGBT-Die 5SMX 12L2510 Die size: 12.4 x 12.4 mm Doc. No. 5SYA 1622-02 Feb 05 • • • • Low loss, rugged SPT technology Smooth switching for good EMC Large bondable emitter area Passivation: SIPOS and Silicon Nitride plus Polyimide


    Original     		PDF 12L2510 specification12L2510 CH-5600