IGBT 6500 V
Abstract: No abstract text available
Text: VCE IC = = 6500 V 25 A IGBT-Die 5SMX 12M6500 Die size: 13.6 x 13.6 mm Doc. No. 5SYA1627-02 July 07 • • • • Low loss, rugged SPT technology Smooth switching for good EMC Large bondable emitter area Passivation: SIPOS and Silicon Nitride plus Polyimide
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12M6500
5SYA1627-02
CH-5600
IGBT 6500 V
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12M6501
Abstract: No abstract text available
Text: VCE IC = = 6500 V 25 A IGBT-Die 5SMX 12M6501 Die size: 13.6 x 13.6 mm Doc. No. 5SYA1627-03 11 11 • • • • Low loss, rugged SPT technology Smooth switching for good EMC Large bondable emitter area Passivation: SIPOS and Silicon Nitride plus Polyimide
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12M6501
5SYA1627-03
CH-5600
12M6501
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5SMX 12M6500
Abstract: 5SMX
Text: VCE IC = = 6500 V 25 A IGBT-Die 5SMX 12M6500 PRELIMINARY Die size: 13.6 x 13.6 mm Doc. No. 5SYA1627-00 Mrz.05 • • • • Low loss, rugged SPT technology Smooth switching for good EMC Large bondable emitter area Passivation: SIPOS and Silicon Nitride plus Polyimide
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12M6500
5SYA1627-00
CH-5600
5SMX 12M6500
5SMX
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IGBT abb
Abstract: 12M6500 5SMX 12M6500 5SLX12M6500 5SMX12M6500
Text: VCE IC = = 6500 V 25 A IGBT-Die 5SMX 12M6500 PRELIMINARY Die size: 13.6 x 13.6 mm Doc. No. 5SYA1627-01 Sep 05 • • • • Low loss, rugged SPT technology Smooth switching for good EMC Large bondable emitter area Passivation: SIPOS and Silicon Nitride plus Polyimide
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PDF
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12M6500
5SYA1627-01
CH-5600
IGBT abb
12M6500
5SMX 12M6500
5SLX12M6500
5SMX12M6500
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