bv42 transistor
Abstract: bv42 27e5 LM324 FDSS2407 injector driver 33E10 marking n9 8-pin PIN diode Pspice model
Text: FDSS2407 N-Channel Dual MOSFET 62V, 3.3A, 132mΩ Features General Description 62V, 132mΩ, 5V Logic Level Gate Dual MOSFET in SO-8 This dual N-Channel MOSFET provides added functions as compared to a conventional Power MOSFET. These are: 1. A drain to source voltage feedback signal and 2. A gate
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FDSS2407
FDSS2407
bv42 transistor
bv42
27e5
LM324
injector driver
33E10
marking n9 8-pin
PIN diode Pspice model
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TC227
Abstract: No abstract text available
Text: FDSS2407 N-Channel Dual MOSFET 62V, 3.3A, 132mΩ Features General Description ̈ 62V, 132mΩ, 5V Logic Level Gate Dual MOSFET in SO-8 This dual N-Channel MOSFET provides added functions as compared to a conventional Power MOSFET. These are: 1. A drain to source voltage feedback signal and 2. A gate
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FDSS2407
FDSS2407
TC227
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irlf120
Abstract: 480 mosfet to-39
Text: PD-90639B IRLF120 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-39 100V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) IRLF120 100V 0.35Ω ID 5.3A The Logic Level ‘L’ series of power MOSFETs are designed to be operated with level logic gate-to-source voltage of 5V.
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PD-90639B
IRLF120
IRLF120
--TO-205AF
480 mosfet to-39
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Untitled
Abstract: No abstract text available
Text: PD-90639B IRLF120 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-39 100V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) IRLF120 100V 0.35Ω ID 5.3A The Logic Level ‘L’ series of power MOSFETs are designed to be operated with level logic gate-to-source voltage of 5V.
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PD-90639B
IRLF120
O-205AF
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Untitled
Abstract: No abstract text available
Text: PD-90639C IRLF120 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-39 100V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) IRLF120 100V 0.35Ω ID 5.3A The Logic Level ‘L’ series of power MOSFETs are designed to be operated with level logic gate-to-source voltage of 5V.
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PD-90639C
IRLF120
O-205AF
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si7738
Abstract: flyback secondary RC snubber CMZ5919B
Text: LT3748 100V Isolated Flyback Controller Features Description 5V to 100V Input Voltage Range nn 1.9A Average Gate Drive Source and Sink Current nn Boundary Mode Operation nn No Transformer Third Winding or Opto-Isolator Required for Regulation nn Primary-Side Winding Feedback Load Regulation
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LT3748
LT1737
3803/LTC3803-3
LTC3803-5
200kHz/300kHz
LTC3805/LTC3805-5
com/LT3748
3748fb
si7738
flyback secondary RC snubber
CMZ5919B
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Untitled
Abstract: No abstract text available
Text: TSM2N7000K 60V N-Channel MOSFET TO-92 PRODUCT SUMMARY VDS V RDS(on)() Pin Definition: 1. Source 2. Gate 3. Drain 60 Features ID (mA) 5 @ VGS = 10V 100 5.5 @ VGS = 5V 100 Block Diagram Low On-Resistance ESD Protection High Speed Switching Low Voltage Drive
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TSM2N7000K
TSM2N7000KCT
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Pa3177NL
Abstract: LT3748 IGBT 48V 200A Si7738 BZT52C5 RC snubber mosfet design 750311591 flyback snubber c3748 B360 diode
Text: LT3748 100V Isolated Flyback Controller Features n n n n n n n n n n Description 5V to 100V Input Voltage Range 1.9A Average Gate Drive Source and Sink Current Boundary Mode Operation No Transformer Third Winding or Opto-Isolator Required for Regulation Primary-Side Winding Feedback Load Regulation
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LT3748
0V/100V
LT1725
LT1737
3803/LTC3803-3
200kHz/300kHz
LTC3803-5
LTC3805/LTC3805-5
3748f
Pa3177NL
LT3748
IGBT 48V 200A
Si7738
BZT52C5
RC snubber mosfet design
750311591
flyback snubber
c3748
B360 diode
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5V GATE TO SOURCE VOLTAGE MOSFET
Abstract: differential pair cascode Monolithic Transistor Pair ALD1101 ALD1102 ALD1103 Dual N-Channel MOSFET dip package CMOS differential amplifier cascode
Text: ADVANCED LINEAR DEVICES, INC. ALD1103 DUAL N-CHANNEL AND DUAL P-CHANNEL MATCHED MOSFET PAIR GENERAL DESCRIPTION APPLICATIONS The ALD1103 is a monolithic dual N-channel and dual P-channel matched transistor pair intended for a broad range of analog applications. These
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ALD1103
ALD1103
ALD1101
ALD1102
ALD1103)
5V GATE TO SOURCE VOLTAGE MOSFET
differential pair cascode
Monolithic Transistor Pair
Dual N-Channel MOSFET dip package
CMOS differential amplifier cascode
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p-channel mosfet transistor low power
Abstract: differential pair cascode mosfet vgs 1.2v vds 5V mosfet vgs 5v n channel enhanced mosfet mosfet Vgs 10mV Ald1103 Monolithic Transistor Pair p channel mosfet ALD1101
Text: ADVANCED LINEAR DEVICES, INC. ALD1103 DUAL N-CHANNEL AND DUAL P-CHANNEL MATCHED MOSFET PAIR GENERAL DESCRIPTION APPLICATIONS The ALD1103 is a monolithic dual N-channel and dual P-channel matched transistor pair intended for a broad range of analog applications. These
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ALD1103
ALD1103
ALD1101
ALD1102
ALD1103)
p-channel mosfet transistor low power
differential pair cascode
mosfet vgs 1.2v vds 5V
mosfet vgs 5v
n channel enhanced mosfet
mosfet Vgs 10mV
Monolithic Transistor Pair
p channel mosfet
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5V GATE TO SOURCE VOLTAGE MOSFET
Abstract: cascode mosfet current mirror Monolithic Transistor Pair mosfet pair ALD1103 ALD1105 ALD1116 ALD1117 differential pair cascode CMOS differential amplifier cascode
Text: ADVANCED LINEAR DEVICES, INC. ALD1105 DUAL N-CHANNEL AND DUAL P-CHANNEL MATCHED PAIR MOSFET GENERAL DESCRIPTION APPLICATIONS The ALD1105 is a monolithic dual N-channel and dual P-channel complementary matched transistor pair intended for a broad range of analog applications. These enhancement-mode transistors are
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ALD1105
ALD1105
ALD1116
ALD1117
ALD1103.
5V GATE TO SOURCE VOLTAGE MOSFET
cascode mosfet current mirror
Monolithic Transistor Pair
mosfet pair
ALD1103
differential pair cascode
CMOS differential amplifier cascode
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RASCO
Abstract: No abstract text available
Text: I I I / I \ A dvanced 1 L inear ALD1103 D e v ic e s , In c . DUAL N-CHANNEL AND DUAL P-CHANNEL MATCHED MOSFET PAIR GENERAL DESCRIPTION APPLICATIONS The ALD1103 is a monolithic dual N-channel and dual P-channel matched transistor pair intended for a broad range of analog applications. These
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ALD1103
ALD1103
ALD1101
ALD1102
ALD1103offers
ALD1103)
RASCO
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50130A
Abstract: RFP50N05L9A AN7254 RFG50N05L RFP50N05L TB334
Text: RFG50N05L, RFP50N05L Data Sheet 50A, 50V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs These are logic-level N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon,
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RFG50N05L,
RFP50N05L
50130A
RFP50N05L9A
AN7254
RFG50N05L
RFP50N05L
TB334
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AN9321
Abstract: AN9322 an7254 AN7260
Text: RF3V49092, RF3S49092SM in t e ik il D a ta S h e e t 20A/10A, 12V, 0.060/0.140 Ohm, Logic Level, Complementary Power MOSFET These complementary power MOSFETs are manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated
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RF3V49092,
RF3S49092SM
0A/10A,
AN7254
AN7260.
RF3S49092SM
AN9321
AN9322
AN7260
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AN7254
Abstract: AN7260 RFW2N06RLE TB334
Text: RFW2N06RLE Data Sheet July 1999 2A, 60V, 0.160 Ohm, Logic Level, N-Channel Power MOSFET File Number 2838.3 Features • 2A, 60V The RFW2N06RLE N-Channel, logic level, ESD protected, power MOSFET is manufactured using the MegaFET process. This process, which uses feature sizes
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RFW2N06RLE
RFW2N06RLE
AN7254
AN7260
TB334
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12N6LE
Abstract: 12n06rle AN9322 RFD12N06RLE RFD12N06RLESM RFP12N06RLE TB334 n06r 12N06
Text: [ /Title RFD1 2N06R LE, RFD12 N06RL ESM, RFP12 N06RL E /Subject (12A, 60V, 0.135 Ohm, NChannel, Logic Level, Power MOSFETs) /Autho r () /Keywords (Intersil Corporation, NChannel, Logic Level, Power MOS- RFD12N06RLE, RFD12N06RLESM, RFP12N06RLE Data Sheet
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2N06R
RFD12
N06RL
RFP12
RFD12N06RLE,
RFD12N06RLESM,
RFP12N06RLE
12N6LE
12n06rle
AN9322
RFD12N06RLE
RFD12N06RLESM
RFP12N06RLE
TB334
n06r
12N06
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x1041
Abstract: No abstract text available
Text: ADVANCED LINEAR DEVICES, INC. ALD1103 DUAL N-CHANNEL AND DUAL P-CHANNEL MATCHED MOSFET PAIR GENERAL DESCRIPTION APPLICATIONS The ALD1103 is a monolithic dual N-channel and dual P-channel matched transistor pair intended for a broad range of analog applications. These
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ALD1103
ALD1103
ALD1101
ALD1102
CERDIP-14
x1041
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voltage source inverter
Abstract: parallel mosfet p channel ALD1105 ALD1115 n channel silicon mosfet ALD1115PAL ALD1116 5V GATE TO SOURCE VOLTAGE MOSFET inverter 4v to 12v N P CHANNEL dual POWER MOSFET
Text: ADVANCED LINEAR DEVICES, INC. ALD1115 COMPLEMENTARY N-CHANNEL AND P-CHANNEL MOSFET GENERAL DESCRIPTION APPLICATIONS The ALD1115 is a monolithic complementary N-channel and P-channel transistor pair intended for a broad range of analog applications. These enhancement-mode transistors are manufactured with Advanced Linear
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ALD1115
ALD1115
ALD1105.
ALD1105
ALD1116)
voltage source inverter
parallel mosfet p channel
n channel silicon mosfet
ALD1115PAL
ALD1116
5V GATE TO SOURCE VOLTAGE MOSFET
inverter 4v to 12v
N P CHANNEL dual POWER MOSFET
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Untitled
Abstract: No abstract text available
Text: e ADVANCED LINEAR DEVICES, INC. TM EPAD EN AB LE D ALD210800/ALD210800A PRECISION N-CHANNEL EPAD® MOSFET ARRAY VGS th = +0.00V QUAD HIGH DRIVE ZERO THRESHOLD MATCHED PAIR GENERAL DESCRIPTION FEATURES & BENEFITS ALD210800A/ALD210800 precision N-Channel EPAD® MOSFET array is precision matched at the factory using ALD’s proven EPAD® CMOS technology. These
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ALD210800/ALD210800A
ALD210800A/ALD210800
ALD110800A/ALD110800
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Untitled
Abstract: No abstract text available
Text: æ I \ I / I " A dvanced 1 ^ L in e a r ALD1t 03 D e v ic e s , In c. DUAL N-CHANNEL AND DUAL P-CHANNEL MATCHED MOSFET PAIR GENERAL DESCRIPTION APPLICATIONS The ALD1103 is a monolithic dual N-channel and dual P-channel matched transistor pair intended for a broad range of analog applications. These
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ALD1103
ALD1101
ALD1102
DGG32c
ALD1103)
025b063
00Q33Q
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AN7254
Abstract: AN7260 RFP8N20L TB334
Text: RFP8N20L Data Sheet July 1999 8A, 200V, 0.600 Ohm, Logic Level, N-Channel Power MOSFET File Number Features • 8A, 200V This N-Channel enhancement mode silicon gate power field effect transistor is specifically designed for use with logic level 5V driving sources in applications such as
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RFP8N20L
AN7254
AN7260
RFP8N20L
TB334
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ALD1105PBL
Abstract: ALD1105 inverter 4v to 12v n channel mosfet 500 mA 400 v
Text: ADVANCED LINEAR DEVICES, INC. ALD1105 DUAL N-CHANNEL AND DUAL P-CHANNEL MATCHED MOSFET PAIR GENERAL DESCRIPTION APPLICATIONS The ALD1105 is a monolithic dual N-channel and dual P-channel complementary matched transistor pair intended for a broad range of analog applications. These enhancement-mode transistors are
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ALD1105
ALD1105
ALD1116
ALD1117
ALD1103.
CERDIP-14
ALD1105PBL
inverter 4v to 12v
n channel mosfet 500 mA 400 v
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AN7254
Abstract: AN7260 RFP15N08L TB334
Text: RFP15N08L Data Sheet June 1999 15A, 80V, 0.140 Ohm, Logic Level, N-Channel Power MOSFET File Number 2840.1 Features • 15A, 80V The RFP15N08L is an N-Channel enhancement mode silicon gate power field effect transistor specifically designed for use with logic level 5 volt driving sources in applications
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RFP15N08L
RFP15N08L
AN7254
AN7260
TB334
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AN7254
Abstract: AN7260 RFP8N20L TB334
Text: RFP8N20L Data Sheet January 2002 8A, 200V, 0.600 Ohm, Logic Level, N-Channel Power MOSFET Features • 8A, 200V This N-Channel enhancement mode silicon gate power field effect transistor is specifically designed for use with logic level 5V driving sources in applications such as
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RFP8N20L
AN7254
AN7260
RFP8N20L
TB334
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