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    33E10 Search Results

    33E10 Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    F3001B7H111033E100 Amphenol Communications Solutions Flex Connector, 0.50mm Pitch, Height 2.00mm, Right angle, Flip type, ZIF, 33 position, With MYLAR Visit Amphenol Communications Solutions
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    33E10 Price and Stock

    SiTime Corporation SIT9121AI-1D2-33E10.000000

    MEMS OSC XO 10.0000MHZ LVPECL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIT9121AI-1D2-33E10.000000 1,621 1
    • 1 $5.46
    • 10 $5.168
    • 100 $4.5942
    • 1000 $3.81892
    • 10000 $3.58921
    		Buy Now

    SiTime Corporation SIT9102AI-431N33E100.00000X

    MEMS OSC XO 100.0000MHZ HCSL SMD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIT9102AI-431N33E100.00000X Digi-Reel 1,097 1
    • 1 $31.58
    • 10 $27.305
    • 100 $23.6362
    • 1000 $23.6362
    • 10000 $23.6362
    		Buy Now

    SiTime Corporation SIT8008BC-83-33E-10.000000

    MEMS OSC XO 10.0000MHZ HCMOS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIT8008BC-83-33E-10.000000 670 1
    • 1 $1.16
    • 10 $1.104
    • 100 $0.9245
    • 1000 $0.75761
    • 10000 $0.66773
    		Buy Now

    SiTime Corporation SIT9121AI-2BF-33E100.000000X

    MEMS OSC XO 100.0000MHZ SMD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIT9121AI-2BF-33E100.000000X Digi-Reel 647 1
    • 1 $6.82
    • 10 $5.891
    • 100 $5.0904
    • 1000 $5.0904
    • 10000 $5.0904
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    SIT9121AI-2BF-33E100.000000X Cut Tape 647 1
    • 1 $6.82
    • 10 $5.891
    • 100 $5.0904
    • 1000 $5.0904
    • 10000 $5.0904
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    Mouser Electronics SIT9121AI-2BF-33E100.000000X 637
    • 1 $6.37
    • 10 $5.77
    • 100 $5.1
    • 1000 $4.25
    • 10000 $4.25
    		Buy Now

    Ferroxcube International Holding BV TX25-15-13-3E10-M

    FERRITE CORE TOROID
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TX25-15-13-3E10-M Bulk 231 1
    • 1 $2.1
    • 10 $1.448
    • 100 $0.9618
    • 1000 $0.73712
    • 10000 $0.73712
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    Find more 33E10 price and stock on Findchips.com

    33E10 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1800 IXYS

    Abstract: "chip level" 33e10
    Text: MIO 1200-33E10 Advanced Technical Information IC80 = 1200 A = 3300 V VCES VCE sat typ. = 3.1 V IGBT Module Single switch Short Circuit SOA Capability Square RBSOA C C C E E E C' G E' Features IGBT Symbol Conditions VCES VGE = 0 V Maximum Ratings VGES 3300


    Original     		PDF 1200-33E10 1800 IXYS "chip level" 33e10

    1800 IXYS

    Abstract: No abstract text available
    Text: MIO 1200-33E10 IC80 = 1200 A = 3300 V VCES VCE sat typ. = 3.1 V IGBT Module Single switch Short Circuit SOA Capability Square RBSOA C C C E E E C' G E' Features IGBT Symbol Conditions VCES VGE = 0 V Maximum Ratings VGES 3300 V ± 20 V IC80 TC = 80°C 1200


    Original     		PDF 1200-33E10 20110119a 1800 IXYS

    Untitled

    Abstract: No abstract text available
    Text: MIO 1200-33E10 IC80 = 1200 A VCES = 3300 V VCE sat typ. = 3.1 V IGBT Module Single switch Short Circuit SOA Capability Square RBSOA C C C E E E C' G E' Features IGBT Symbol Conditions VCES VGE = 0 V Maximum Ratings VGES 3300 V ± 20 V IC80 TC = 80°C 1200


    Original     		PDF 1200-33E10 20110119a

    Untitled

    Abstract: No abstract text available
    Text: MIO 1200-33E10 IC80 = 1200 A = 3300 V VCES VCE sat typ. = 3.1 V IGBT Module Single switch Short Circuit SOA Capability Square RBSOA C C C E E E C' t G E' Features IGBT VCES VGE = 0 V Maximum Ratings u Conditions 3300 V ± 20 V 1200 A 2400 A 10 µs -o Symbol


    Original     		PDF 1200-33E10 20110119a

    75639p

    Abstract: 75639g 75639 75639S 19E1 HUFA75639G3 HUFA75639P3 HUFA75639S3S HUFA75639S3ST TB334
    Text: HUFA75639G3, HUFA75639P3, HUFA75639S3S Data Sheet November 2000 56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs Title UFA 639 , UFA 639 UFA 639 S bt A, 0V, 25 m, anraF wer OSTs) utho 4961 Features • 56A, 100V These N-Channel power MOSFETs are manufactured using the


    Original     		PDF HUFA75639G3, HUFA75639P3, HUFA75639S3S 75639p 75639g 75639 75639S 19E1 HUFA75639G3 HUFA75639P3 HUFA75639S3S HUFA75639S3ST TB334

    AN9321

    Abstract: AN9322 HUFA75639S3R4851 TB334 TC217
    Text: HUFA75639S3R4851 Data Sheet December 2001 56A, 115V, 0.025 Ohm, N-Channel UltraFET Power MOSFET This N-Channel power MOSFETs is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per


    Original     		PDF HUFA75639S3R4851 115opment. AN9321 AN9322 HUFA75639S3R4851 TB334 TC217

    baco 33e10

    Abstract: IEC 60947-5-5 baco 33earl EN418 LWA0226 baco 36 led lamp 230v circuit diagram LBX17301 IEC/EN 60947-5-1 AC15 IEC 60947-5-1
    Text: control & signalling • Complete range of pushbuttons, selector/key switches, pilot lights & control stations • Wide range of mushroom heads • Ø22mm hole fixing • Easy to install & quick to connect • Screw terminal, push fit, faston & PCB connection possibilities


    Original     		PDF M16/20 EN418 baco 33e10 IEC 60947-5-5 baco 33earl EN418 LWA0226 baco 36 led lamp 230v circuit diagram LBX17301 IEC/EN 60947-5-1 AC15 IEC 60947-5-1

    Untitled

    Abstract: No abstract text available
    Text: HUF75639G3, HUF75639P3, HUF75639S3S, HUF75639S3 Data Sheet N-Channel UltraFET Power MOSFET 100 V, 56 A, 25 mΩ These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible onresistance per silicon area, resulting in outstanding


    Original     		PDF HUF75639G3, HUF75639P3, HUF75639S3S, HUF75639S3 HUF75639S3

    R4851

    Abstract: AN9321 AN9322 HUFA75639S3R4851 TB334
    Text: HUFA75639S3R4851 Data Sheet November 2000 File Number 4962 56A, 115V, 0.025 Ohm, N-Channel UltraFET Power MOSFET Title UFA 639 R48 bt A, 0V, 25 m, This N-Channel power MOSFETs is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per


    Original     		PDF HUFA75639S3R4851 R4851 AN9321 AN9322 HUFA75639S3R4851 TB334

    AN7254

    Abstract: AN7260 AN9321 AN9322 HAF70009 TB334
    Text: HAF70009 Data Sheet 56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in


    Original     		PDF HAF70009 AN7254 AN7260 AN9321 AN9322 HAF70009 TB334

    75639p

    Abstract: 75639s 75639G 75639 HUFA75639G3 HUFA75639P3 HUFA75639S3S HUFA75639S3ST TB334
    Text: HUFA75639G3, HUFA75639P3, HUFA75639S3S Data Sheet December 2001 56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs Features • 56A, 100V These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology


    Original     		PDF HUFA75639G3, HUFA75639P3, HUFA75639S3S 75639p 75639s 75639G 75639 HUFA75639G3 HUFA75639P3 HUFA75639S3S HUFA75639S3ST TB334

    Untitled

    Abstract: No abstract text available
    Text: HUFA75639S3R4851 TM Data Sheet November 2000 File Number 4962 56A, 115V, 0.025 Ohm, N-Channel UltraFET Power MOSFET This N-Channel power MOSFETs is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per


    Original     		PDF HUFA75639S3R4851

    75639p

    Abstract: 75639g 75639 HUF75639S3S equivalent 75639S HUF75639G3 HUF75639P3 HUF75639S3 HUF75639S3S HUF75639S3ST
    Text: HUF75639G3, HUF75639P3, HUF75639S3S, HUF75639S3 Data Sheet 56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUF75639G3, HUF75639P3, HUF75639S3S, HUF75639S3 75639p 75639g 75639 HUF75639S3S equivalent 75639S HUF75639G3 HUF75639P3 HUF75639S3 HUF75639S3S HUF75639S3ST

    75639s

    Abstract: 75639p AN7254 KP56 75639G HUF75639P3 HUF75639S3ST
    Text: HUF75639G3, HUF75639P3, HUF75639S3S, HUF75639S3 Data Sheet 56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs Title UF7 39G UF75 9P3, UF75 9S3 bt A, 0V, 25 m, These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This


    Original     		PDF HUF75639G3, HUF75639P3, HUF75639S3S, HUF75639S3 O-263AB TB334, 75639s 75639p AN7254 KP56 75639G HUF75639P3 HUF75639S3ST

    75639G

    Abstract: 75639P 75639S HUF75639G3 HUF75639P3 HUF75639S3S HUF75639S3ST TB334
    Text: HUF75639G3, HUF75639P3, HUF75639S3S TM Data Sheet August 2000 56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs File Number 4477.8 Features • 56A, 100V These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology


    Original     		PDF HUF75639G3, HUF75639P3, HUF75639S3S 75639G 75639P 75639S HUF75639G3 HUF75639P3 HUF75639S3S HUF75639S3ST TB334

    AN7254

    Abstract: AN9321 AN9322 HUF75639S3R4851 TB334
    Text: HUF75639S3R4851 Data Sheet April 2000 File Number 4854 56A, 115V, 0.025 Ohm, N-Channel UltraFET Power MOSFET Title UF7 39S 485 bt A, 0V, 25 m, This N-Channel power MOSFETs is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per


    Original     		PDF HUF75639S3R4851 AN7254 AN9321 AN9322 HUF75639S3R4851 TB334

    65e9 transistor

    Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
    Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12


    Original     		PDF 1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 65e9 transistor transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note

    75639p

    Abstract: 75639g
    Text: HUFA75639G3, HUFA75639P3, HUFA75639S3S TM Data Sheet November 2000 56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs File Number 4961 Features • 56A, 100V These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology


    Original     		PDF HUFA75639G3, HUFA75639P3, HUFA75639S3S 75639p 75639g

    75639P

    Abstract: HUF75639P3 75639G 75639S HUF75639G3 HUF75639S3S HUF75639S3ST TB334
    Text: HUF75639G3, HUF75639P3, HUF75639S3S Semiconductor Data Sheet April 1999 56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs File Number 4477.5 Features • 56A, 100V These N-Channel power MOSFETs are manufactured using the innovative UltraFET process.


    Original     		PDF HUF75639G3, HUF75639P3, HUF75639S3S O-263AB 330mm 100mm EIA-481 75639P HUF75639P3 75639G 75639S HUF75639G3 HUF75639S3S HUF75639S3ST TB334

    75639s

    Abstract: 75639P 75639 75639G HUF75639G3 HUF75639P3 HUF75639S3 HUF75639S3S HUF75639S3ST TB334
    Text: HUF75639G3, HUF75639P3, HUF75639S3S, HUF75639S3 Data Sheet 56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUF75639G3, HUF75639P3, HUF75639S3S, HUF75639S3 75639s 75639P 75639 75639G HUF75639G3 HUF75639P3 HUF75639S3 HUF75639S3S HUF75639S3ST TB334

    AN7254

    Abstract: AN9321 AN9322 HUF75639S3R4851 TB334
    Text: HUF75639S3R4851 Data Sheet December 2001 56A, 115V, 0.025 Ohm, N-Channel UltraFET Power MOSFET This N-Channel power MOSFETs is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per


    Original     		PDF HUF75639S3R4851 115Vopment. AN7254 AN9321 AN9322 HUF75639S3R4851 TB334

    AN7254

    Abstract: AN7260 AN9321 AN9322 HUF75639S3R4851 TB334
    Text: HUF75639S3R4851 TM Data Sheet April 2000 File Number 4854 56A, 115V, 0.025 Ohm, N-Channel UltraFET Power MOSFET This N-Channel power MOSFETs is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per


    Original     		PDF HUF75639S3R4851 AN7254 AN7260 AN9321 AN9322 HUF75639S3R4851 TB334

    Untitled

    Abstract: No abstract text available
    Text: HUF75639G3, HUF75639P3, HUF75639S3S Semiconductor Data Sheet June 1999 56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs F ile N u m b er 4477.6 Features • 56A, 100V These N-Channel power MOSFETs are manufactured using the innovative UltraFET process.


    OCR Scan     		PDF HUF75639G3, HUF75639P3, HUF75639S3S 54e-2 98e-1 99e-1 97e-2 HUF75639 95e-3 95e-2

    Esan

    Abstract: t33e
    Text: E-SAN E L EC TR O N IC CO LTD EME D • 3D37M0E □ □ □ 0 0 E 5 T m Active Delay Line ECL Interface 33E Series Specifications: • Delay tolerance • • • • • • • • Rise time Operating Temp. Supply Voltage Logic 1 O utput Logic 0 O utput


    OCR Scan     		PDF 3D37M0E 200mW 33E-010 33E-020 33E-030 33E-040 33E-050 33E-060 33E-070 33E-080 Esan t33e