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    75639S Search Results

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    75639S Price and Stock

    Rochester Electronics LLC

    Rochester Electronics LLC HUF75639S3ST_Q

    MOSFET N-CH 100V 56A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey HUF75639S3ST_Q Bulk 36,800 256
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    Rochester Electronics LLC HUF75639S3S

    MOSFET N-CH 100V 56A D2PAK
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    DigiKey HUF75639S3S Tube 20,586 202
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    Rochester Electronics LLC HUF75639S3

    MOSFET N-CH 100V 56A I2PAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey HUF75639S3 Tube 5,257 207
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    Rochester Electronics LLC HUFA75639S3ST

    56A, 100V, 0.025OHM, N-CHANNEL,
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    DigiKey HUFA75639S3ST Bulk 1,559 204
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    Rochester Electronics LLC HUF75639S3ST

    POWER FIELD-EFFECT TRANSISTOR, 5
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    DigiKey HUF75639S3ST Bulk 810 235
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    75639S Datasheets Context Search

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    75639p

    Abstract: 75639g 75639 75639S 19E1 HUFA75639G3 HUFA75639P3 HUFA75639S3S HUFA75639S3ST TB334
    Text: HUFA75639G3, HUFA75639P3, 75639S3S Data Sheet November 2000 56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs Title UFA 639 , UFA 639 UFA 639 S bt A, 0V, 25 m, anraF wer OSTs) utho 4961 Features • 56A, 100V These N-Channel power MOSFETs are manufactured using the


    Original     		HUFA75639G3, HUFA75639P3, HUFA75639S3S 75639p 75639g 75639 75639S 19E1 HUFA75639G3 HUFA75639P3 HUFA75639S3S HUFA75639S3ST TB334 PDF

    Untitled

    Abstract: No abstract text available
    Text: HUF75639G3, HUF75639P3, 75639S3S, 75639S3 Data Sheet N-Channel UltraFET Power MOSFET 100 V, 56 A, 25 mΩ These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible onresistance per silicon area, resulting in outstanding


    Original     		HUF75639G3, HUF75639P3, HUF75639S3S, HUF75639S3 HUF75639S3 PDF

    Untitled

    Abstract: No abstract text available
    Text: HUF75639G3, HUF75639P3, 75639S3S Semiconductor Data Sheet June 1999 56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs F ile N u m b er 4477.6 Features • 56A, 100V These N-Channel power MOSFETs are manufactured using the innovative UltraFET process.


    OCR Scan     		HUF75639G3, HUF75639P3, HUF75639S3S 54e-2 98e-1 99e-1 97e-2 HUF75639 95e-3 95e-2 PDF

    75639p

    Abstract: 75639s 75639G HUF75639P3 HUF75639S3ST TA75639
    Text: in te r« ! HUF75639G3, HUF75639P3, 75639S3S Data Sheet O ctober 1999 S6A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs 4477.7 Features • 56A, 100 V These N-Channel power M O SFETs UWaBfr Fite N u m b e r are manufactured using the • Simulation Models


    OCR Scan     		HUF75639G3, HUF75639P3, HUF75639S3S AN7254 AN7260. 75639p 75639s 75639G HUF75639P3 HUF75639S3ST TA75639 PDF

    75639p

    Abstract: 75639s 75639G 75639 HUFA75639G3 HUFA75639P3 HUFA75639S3S HUFA75639S3ST TB334
    Text: HUFA75639G3, HUFA75639P3, 75639S3S Data Sheet December 2001 56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs Features • 56A, 100V These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology


    Original     		HUFA75639G3, HUFA75639P3, HUFA75639S3S 75639p 75639s 75639G 75639 HUFA75639G3 HUFA75639P3 HUFA75639S3S HUFA75639S3ST TB334 PDF

    75639p

    Abstract: 75639g 75639 HUF75639S3S equivalent 75639S HUF75639G3 HUF75639P3 HUF75639S3 HUF75639S3S HUF75639S3ST
    Text: HUF75639G3, HUF75639P3, 75639S3S, 75639S3 Data Sheet 56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		HUF75639G3, HUF75639P3, HUF75639S3S, HUF75639S3 75639p 75639g 75639 HUF75639S3S equivalent 75639S HUF75639G3 HUF75639P3 HUF75639S3 HUF75639S3S HUF75639S3ST PDF

    75639s

    Abstract: 75639p AN7254 KP56 75639G HUF75639P3 HUF75639S3ST
    Text: HUF75639G3, HUF75639P3, 75639S3S, 75639S3 Data Sheet 56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs Title UF7 39G UF75 9P3, UF75 9S3 bt A, 0V, 25 m, These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This


    Original     		HUF75639G3, HUF75639P3, HUF75639S3S, HUF75639S3 O-263AB TB334, 75639s 75639p AN7254 KP56 75639G HUF75639P3 HUF75639S3ST PDF

    75639p

    Abstract: No abstract text available
    Text: HUF75639G3, HUF75639P3, 75639S3, 75639S3S Semiconductor October 1998 Data Sheet 53A, 100V, 0.028 Ohm, N-Channel UltraFET Power MOSFETs File Number 4477.3 Features 5 3 A ,1 0 0 V These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This


    OCR Scan     		HUF75639G3, HUF75639P3, HUF75639S3, HUF75639S3S 1-800-4-HARR 75639p PDF

    75639p

    Abstract: 75639G
    Text: HUF75639G3, HUF75639P3, 75639S3, 75639S3S Semiconductor October 1998 Data Sheet 53A, 100 V, 0.028 Ohm, N-Channel UltraFET Power MOSFETs File Num ber 4477.3 Features • 53A,100V These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This


    OCR Scan     		HUF75639G3, HUF75639P3, HUF75639S3, HUF75639S3S 1-800-4-HARR 75639p 75639G PDF

    75639p

    Abstract: 75639 75639g 75639S 504E3 TB334 HUF75639G3 HUF75639P3 HUF75639S3S HUF75639S3ST
    Text: HUF75639G3, HUF75639P3, 75639S3S Data Sheet October 1999 56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs File Number 4477.7 Features • 56A, 100V These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology


    Original     		HUF75639G3, HUF75639P3, HUF75639S3S 75639p 75639 75639g 75639S 504E3 TB334 HUF75639G3 HUF75639P3 HUF75639S3S HUF75639S3ST PDF

    75639G

    Abstract: 75639P 75639S HUF75639G3 HUF75639P3 HUF75639S3S HUF75639S3ST TB334
    Text: HUF75639G3, HUF75639P3, 75639S3S TM Data Sheet August 2000 56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs File Number 4477.8 Features • 56A, 100V These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology


    Original     		HUF75639G3, HUF75639P3, HUF75639S3S 75639G 75639P 75639S HUF75639G3 HUF75639P3 HUF75639S3S HUF75639S3ST TB334 PDF

    75639

    Abstract: 75639s
    Text: 75639S3ST_F085A Data Sheet March 2012 56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs Features • 56A, 100V These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		HUFA75639S3ST F085A F085A 75639 75639s PDF

    65e9 transistor

    Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
    Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12


    Original     		1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 65e9 transistor transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note PDF

    75639p

    Abstract: 75639g
    Text: HUFA75639G3, HUFA75639P3, 75639S3S TM Data Sheet November 2000 56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs File Number 4961 Features • 56A, 100V These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology


    Original     		HUFA75639G3, HUFA75639P3, HUFA75639S3S 75639p 75639g PDF

    75639s

    Abstract: 75639P 75639 75639G HUF75639G3 HUF75639P3 HUF75639S3 HUF75639S3S HUF75639S3ST TB334
    Text: HUF75639G3, HUF75639P3, 75639S3S, 75639S3 Data Sheet 56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		HUF75639G3, HUF75639P3, HUF75639S3S, HUF75639S3 75639s 75639P 75639 75639G HUF75639G3 HUF75639P3 HUF75639S3 HUF75639S3S HUF75639S3ST TB334 PDF

    75639p

    Abstract: 30E2 75639g
    Text: HUF75639G3, HUF75639P3, 75639S3S Semiconductor January 1999 53A, 100 V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs File Num ber 4477.4 Features • 5 3 A ,1 0 0 V These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This


    OCR Scan     		HUF75639G3, HUF75639P3, HUF75639S3S HUF75639 500e-2 35e-1 88e-3 18e-2 75639p 30E2 75639g PDF

    75639s

    Abstract: 75639p
    Text: HUF75639G3, HUF75639P3, 75639S3S, 75639S3 TM Data Sheet 56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		HUF75639G3, HUF75639P3, HUF75639S3S, HUF75639S3 75639s 75639p PDF