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    6.2D DIODE Search Results

    6.2D DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    6.2D DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    MA8062

    Abstract: MAZL062D
    Text: MA111 Zener Diodes Composite Elements MAZL062D Silicon planer type Unit : mm Constant voltage, constant current, waveform cripper and surge absorption circuit +0.2 2.8 -0.3 +0.25 0.65±0.15 1.5 -0.05 0.65±0.15 3 2 +0.1 0.16 -0.06 0 to 0.1 0.8 1.1 -0.1 +0.2


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    MA111 MAZL062D MA8062 MA8062 MAZL062D PDF

    MA8062

    Abstract: MAZL062D
    Text: MA111 Zener Diodes Composite Elements MAZL062D Silicon planer type Unit : mm Constant voltage, constant current, waveform cripper and surge absorption circuit +0.2 2.8 -0.3 +0.25 0.65±0.15 1.5 -0.05 0.65±0.15 Four anode-common element wiring of MA8062 3


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    MA111 MAZL062D MA8062 MA8062 MAZL062D PDF

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    Abstract: No abstract text available
    Text: MA111 Zener Diodes Composite Elements MAZL062D Silicon planer type Unit : mm Constant voltage, constant current, waveform cripper and surge absorption circuit +0.2 2.8 -0.3 +0.25 0.65±0.15 1.5 -0.05 0.65±0.15 0 to 0.1 0.8 +0.2 1.1 -0.1 Average forward current


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    MA111 MAZL062D MA8062 PDF

    Z17D

    Abstract: Z27D Z24D Z11D 6/18/Z11D
    Text: Silicon zener diodes. 3 Watts T he plastic m aterial c arrie s U /L reco g n itio n 9 4 V -0 . 3 E Z 3 .9 0 5 /S Z 5 5 S e n e s . 3 .0 W atts. C ase ; D O -41/SM A O utline î 2/7 N om inal Z ener V oltage TYPE A xial Lead | S.M .D . M axim um R everse L eakage C urrent


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    -41/SM SZ180D 3EZ200D T00547c Z17D Z27D Z24D Z11D 6/18/Z11D PDF

    Untitled

    Abstract: No abstract text available
    Text: 3 E Z 3.9D 5 thru 3EZ200D5 Microsemi Corp. $ The û«xa» experts SCOTTSDALE, AZ For more information call: m m s m im s m 602 941-6300 SILICON 3 WATT ZENER DIODE FEATURES • ZENER VOLTAGE 3 .9V to 200 V • HIGH SURGE CURRENT RATING • 3 W ATTS DISSIPATION IN A N O RM ALLY 1 W ATT PACKAGE


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    3EZ200D5 QDD3A21 PDF

    Untitled

    Abstract: No abstract text available
    Text: International PD'9-1229 [jogRectifier_ IRFP350LC HEXFET Power MOSFET • • • • • • • Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V Vgs Rating Reduced Cjgg, C0Ss, ^rss Isolated Central Mounting Hole Dynamic dv/dt Rated


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    IRFP350LC PDF

    Untitled

    Abstract: No abstract text available
    Text: International jog Rectifier HEXFET Power MOSFET • • • • • • MB5545H DDISSTB S2D WMIUR PD-9.573B IRFPE50 INTERNATIO N AL R E C T IF IE R Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling


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    MB5545H IRFPE50 O-247 O-220 O-240 PDF

    DIODE C249

    Abstract: C246 C247
    Text: PD - 9.1264C International IGR Rectifier IRF7606 HEXFET Power M O S F E T • • • • • • • Generation V Technology Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile <1.1 mm Available in Tape and Reel Fast Switching


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    1264C IRF7606 C-249 DIODE C249 C246 C247 PDF

    IRFP250

    Abstract: Diode marking WW1 diode ww1 05 443D MOSFET IRFp250
    Text: PD-9.443D International K Rectifier IRFP250 HEXFET® P o w e r M O S F E T • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements ^DSS ~ 2 0 0 V


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    IRFP250 O-247 T0-220 O-218 Diode marking WW1 diode ww1 05 443D MOSFET IRFp250 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD-9.995 International Hü Rectifier IRFP354 HEXFET Power MOSFET • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements Vdss - 450V R DS on = 0 .35Q


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    IRFP354 rlie03 D-6380 455545c! PDF