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    600B1 Search Results

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    600B1 Price and Stock

    WeEn Semiconductor Co Ltd BTA225B-600B,118

    TRIAC 600V 25A D2PAK
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    DigiKey BTA225B-600B,118 Digi-Reel 10,489 1
    • 1 $2.39
    • 10 $1.634
    • 100 $2.39
    • 1000 $2.39
    • 10000 $2.39
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    BTA225B-600B,118 Cut Tape 10,489 1
    • 1 $2.39
    • 10 $1.634
    • 100 $2.39
    • 1000 $2.39
    • 10000 $2.39
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    BTA225B-600B,118 Reel 9,600 800
    • 1 -
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    • 100 -
    • 1000 $0.88
    • 10000 $0.88
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    Mouser Electronics BTA225B-600B,118 6,071
    • 1 $1.47
    • 10 $1.23
    • 100 $0.974
    • 1000 $0.88
    • 10000 $0.88
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    Newark BTA225B-600B,118 Cut Tape 5,258 1
    • 1 $2.18
    • 10 $1.82
    • 100 $1.49
    • 1000 $1.33
    • 10000 $1.33
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    Avnet Silica BTA225B-600B,118 9 Weeks 800
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    EBV Elektronik BTA225B-600B,118 9 Weeks 800
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    Eaton Bussmann NT06104F3600B1G

    NTC 0603 10K 1% 3600 B 2%
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    DigiKey NT06104F3600B1G Digi-Reel 3,878 1
    • 1 $0.26
    • 10 $0.26
    • 100 $0.1587
    • 1000 $0.1243
    • 10000 $0.1243
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    NT06104F3600B1G Cut Tape 3,878 1
    • 1 $0.26
    • 10 $0.26
    • 100 $0.1587
    • 1000 $0.1243
    • 10000 $0.1243
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    Sager NT06104F3600B1G 4,000
    • 1 -
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    • 10000 $0.0778
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    Eaton Bussmann NRCE205J4600B1KO

    THERMISTOR 200K OHM 4600 BETA
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    DigiKey NRCE205J4600B1KO Bulk 1,900 1
    • 1 $0.32
    • 10 $0.32
    • 100 $0.1988
    • 1000 $0.15576
    • 10000 $0.13138
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    Newark NRCE205J4600B1KO Bulk 1,950 1
    • 1 $0.15
    • 10 $0.15
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    • 10000 $0.15
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    Sager NRCE205J4600B1KO 1,000
    • 1 -
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    • 100 -
    • 1000 $0.1106
    • 10000 $0.1014
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    WeEn Semiconductor Co Ltd BTA204S-600B,118

    TRIAC 600V 4A DPAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BTA204S-600B,118 Cut Tape 327 1
    • 1 $0.85
    • 10 $0.568
    • 100 $0.85
    • 1000 $0.28407
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    BTA204S-600B,118 Digi-Reel 327 1
    • 1 $0.85
    • 10 $0.568
    • 100 $0.85
    • 1000 $0.28407
    • 10000 $0.28407
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    Mouser Electronics BTA204S-600B,118 7,890
    • 1 $0.66
    • 10 $0.511
    • 100 $0.357
    • 1000 $0.288
    • 10000 $0.212
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    Newark BTA204S-600B,118 Bulk 7,460 1
    • 1 $0.496
    • 10 $0.438
    • 100 $0.343
    • 1000 $0.283
    • 10000 $0.261
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    EBV Elektronik BTA204S-600B,118 9 Weeks 2,500
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    New Advantage Corporation BTA204S-600B,118 5,000 1
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    • 10000 $0.2706
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    3M Interconnect 3600B-14-100SF

    MULTI-PR 14CON28AWGBEI 100' FOOT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 3600B-14-100SF 180 1
    • 1 $5.44
    • 10 $4.636
    • 100 $3.9324
    • 1000 $3.9324
    • 10000 $3.9324
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    3600B-14-100SF 8 1
    • 1 $279.2
    • 10 $236.017
    • 100 $220.4344
    • 1000 $220.4344
    • 10000 $220.4344
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    Find more 600B1 price and stock on Findchips.com

    600B1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: PULSE SPECIALTY COMPONENTS Low Profile Plug-in Transformers Part Number LP 10-250B23 LP 10-600B1 LP 10-1200B2 LP 10-2400B89 LP 10-4800B90 LP 12-200B24 LP 12-450B3 LP 12-900B4 LP 12-1900B91 LP 12-3800B92 LP 16-150B25 LP 16-350B5 LP 16-700B6 LP 16-1500B93 LP 16-3000B94


    Original     		PDF 10-250B23 10-600B1 10-1200B2 10-2400B89 10-4800B90 12-200B24 12-450B3 12-900B4 12-1900B91 12-3800B92

    MPL-12-12

    Abstract: 18650B 34-6B63 2025B LR680
    Text: Series LP and MPL Power Transformers Low Profile Humbucking Plug-in Transformers Part Number LP 10-250B23 LP 10-600B1 LP 10-1200B2 LP 10-2400B89 LP 10-4800B90 LP 12-200B24 LP 12-450B3 LP 12-900B4 LP 12-1900B91 LP 12-3800B92 LP 16-150B25 LP 16-350B5 LP 16-700B6


    Original     		PDF 10-250B23 10-600B1 10-1200B2 10-2400B89 10-4800B90 12-200B24 12-450B3 12-900B4 12-1900B91 12-3800B92 MPL-12-12 18650B 34-6B63 2025B LR680

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6P9220H Rev. 0, 10/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6P9220HR3 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of


    Original     		PDF MRF6P9220H MRF6P9220HR3

    tantulum capacitor

    Abstract: 8VSB NIPPON CAPACITORS datasheet dvbt transmitter dvbt transmitter ECE capacitor rf push pull mosfet power amplifier A114 Nippon chemi AN1955
    Text: Freescale Semiconductor Technical Data Document Number: MRF6P3300H Rev. 0, 9/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6P3300HR3 MRF6P3300HR5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance


    Original     		PDF MRF6P3300H MRF6P3300HR3 MRF6P3300HR5 MRF6P3300HR3 tantulum capacitor 8VSB NIPPON CAPACITORS datasheet dvbt transmitter dvbt transmitter ECE capacitor rf push pull mosfet power amplifier A114 Nippon chemi AN1955

    A113

    Abstract: A114 A115 C101 JESD22 MRF6S18060MBR1
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S18060 Rev. 2, 5/2006 Replaced by MRF6S18060NR1/NBR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.


    Original     		PDF MRF6S18060 MRF6S18060NR1/NBR1. MRF6S18060MR1 MRF6S18060MBR1 MRF6S18060MR1 A113 A114 A115 C101 JESD22 MRF6S18060MBR1

    AD250

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S19100N Rev. 0, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S19100NR1 MRF7S19100NBR1 Designed for CDMA base station applications with frequencies from 1930 to


    Original     		PDF MRF7S19100N MRF7S19100NR1 MRF7S19100NBR1 MRF7S19100N AD250

    A113

    Abstract: A114 A115 AN1955 C101 JESD22 MRF6S21100N MRF6S21100NBR1 MRF6S21100NR1
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S21100N Rev. 0, 6/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S21100NR1 MRF6S21100NBR1 Designed for W- CDMA base station applications with frequencies from 2110


    Original     		PDF MRF6S21100N MRF6S21100NR1 MRF6S21100NBR1 MRF6S21100NR1 A113 A114 A115 AN1955 C101 JESD22 MRF6S21100N MRF6S21100NBR1

    A113

    Abstract: A114 A115 C101 JESD22 MRF6S9125 MRF6S9125MBR1 MRF6S9125MR1 MRF6S9125NBR1 MRF6S9125NR1
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S9125 Rev. 1, 7/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 MRF6S9125MBR1 Designed for broadband commercial and industrial applications with


    Original     		PDF MRF6S9125 MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 MRF6S9125MBR1 MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 A113 A114 A115 C101 JESD22 MRF6S9125 MRF6S9125MBR1

    200a1

    Abstract: No abstract text available
    Text: OSI SPLIT-CORE CURRENT TRANSFORMERS UL Now with n io Reco gnit FEATURES • • • LOW COST 0.5% Linearity Split-core AC Outputs 0.1A,1A, 5A, 0.333V, 1V, 5V INPUT AC AMPS 0-50 0-100 0-200 0-100 0-200 0-300 0-400 0-500 0-600 0-800 0-800 0-1000 0-1200 0-1200


    Original     		PDF E134271 1000C- 1200C- 1200D- 1500C- 1500D- 2000D- 2500D- 50A-1 00A-1 200a1

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S9125 Rev. 0, 6/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 MRF6S9125MBR1 Designed for broadband commercial and industrial applications with


    Original     		PDF MRF6S9125 MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 MRF6S9125MBR1 MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MRF6S18060 Rev. 2, 5/2006 Freescale Semiconductor Technical Data Replaced by MRF6S18060NR1/NBR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.


    Original     		PDF MRF6S18060 MRF6S18060NR1/NBR1. MRF6S18060MR1 MRF6S18060MBR1 MRF6S18060MR1

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S9125 Rev. 2, 2/2006 Replaced by MRF6S9125NR1/NBR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.


    Original     		PDF MRF6S9125 MRF6S9125NR1/NBR1. MRF6S9125MR1 MRF6S9125MBR1 MRF6S9125MR1

    K512

    Abstract: KRY 112 442 dual band XTS01 2.2 un 1950 adr transport book national semiconductor Broadcom cli debug powerpc pci bridge kry 112 42 KRY 112 75 dual band
    Text: MSC8154E Reference Manual Quad Core Digital Signal Processor with Security MSC8154ERM Rev 0, September 2010 How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc.


    Original     		PDF MSC8154E MSC8154ERM EL516 0xCA800 K512 KRY 112 442 dual band XTS01 2.2 un 1950 adr transport book national semiconductor Broadcom cli debug powerpc pci bridge kry 112 42 KRY 112 75 dual band

    Nippon capacitors

    Abstract: Nippon chemi
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S9125N Rev. 3, 3/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S9125NR1 MRF6S9125NBR1 Designed for broadband commercial and industrial applications with


    Original     		PDF MRF6S9125N MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125N Nippon capacitors Nippon chemi

    567 tone

    Abstract: A113 A114 A115 AN1955 C101 JESD22 MRF7S19100NBR1 MRF7S19100NR1 j327
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S19100N Rev. 2, 8/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S19100NR1 MRF7S19100NBR1 Designed for CDMA base station applications with frequencies from 1930 to


    Original     		PDF MRF7S19100N MRF7S19100NR1 MRF7S19100NBR1 MRF7S19100NR1 DataMRF7S19100N 567 tone A113 A114 A115 AN1955 C101 JESD22 MRF7S19100NBR1 j327

    NAND Flash Programmer with TSOP-48 adapter

    Abstract: INTEL Core i7 860 schematic diagram inverter lcd monitor fujitsu MB506 ULTRA HIGH FREQUENCY PRESCALER fujitsu LVDS vga MB89625R VHDL code simple calculator of lcd display JTag Emulator MB90F497 Millbrook BGA TBA 129-5
    Text: Master Product Selector Guide February 2001 Fujitsu Microelectronics, Inc. Contents Introduction. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Application Specific ICs ASICs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3


    Original     		PDF

    200a1

    Abstract: 300B1 2500AA
    Text: OSI SPLIT-CORE CURRENT TRANSFORMERS h UL Now wit ion it Recogn FEATURES • • • APPLICATIONS 0-50 0-100 0-200 0-100 0-200 0-300 0-400 0-500 0-600 0-800 0-800 0-1000 0-1200 0-1200 0-1500 0-1500 0-2000 0-2500 • • • E134271 STANDARD OUTPUTS MODEL CTY0-0.1Aac*


    Original     		PDF 1000C- 1200C- 1200D- 1500C- 1500D- 2000D- 2500D- 50A-1 00A-1 200a1 300B1 2500AA

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MRF5S9080N Rev. 0, 3/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S9080NR1 MRF5S9080NBR1 Designed for GSM and GSM EDGE base station applications with frequencies from 869 to 960 MHz. Suitable for TDMA, CDMA, and multicarrier


    Original     		PDF MRF5S9080N MRF5S9080NR1 MRF5S9080NBR1 MRF5S9080N

    wimax soc

    Abstract: MSC8154E KRY 112 442 dual band csr bc4 KRY 112 75 1 Transceiver Broadcom 3G RF KRY 112 75 1 dual band DDR3 DIMM 2SD 2581 schema electronic modem 3g made in china
    Text: MSC8154E Reference Manual Quad Core Digital Signal Processor with Security MSC8154ERM Rev 1, November 2010 How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc.


    Original     		PDF MSC8154E MSC8154ERM EL516 0xCA800 wimax soc KRY 112 442 dual band csr bc4 KRY 112 75 1 Transceiver Broadcom 3G RF KRY 112 75 1 dual band DDR3 DIMM 2SD 2581 schema electronic modem 3g made in china

    A113

    Abstract: A114 A115 AN1955 C101 JESD22 MRF6S18060NBR1 MRF6S18060NR1
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S18060N Rev. 3, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S18060NR1 MRF6S18060NBR1 Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA, and


    Original     		PDF MRF6S18060N MRF6S18060NR1 MRF6S18060NBR1 MRF6S18060NR1 A113 A114 A115 AN1955 C101 JESD22 MRF6S18060NBR1

    1AF1-16LG

    Abstract: 1AM1-12LG 183U1 600A2 600A1 12SC-EW 600B3 24LC SC st Duplex adapter 600B1
    Text: fiber.book : sec07.fm Page 8 Thursday, June 22, 2000 11:40 AM 600A & 600B One Unit High Combination Shelves Features • Frame mountable – Reversible 23-inch 58.42 cm or 19-inch (48.26 cm) frame mounting brackets on 600A2 – Flush or recessed mounting brackets for 19-inch ETSI


    Original     		PDF sec07 23-inch 19-inch 600A2 19-inch 600A1 1AF1-16LG 1AM1-12LG 183U1 1AF1-16LG 1AM1-12LG 183U1 600A2 600A1 12SC-EW 600B3 24LC SC st Duplex adapter 600B1

    j378

    Abstract: A113 A114 A115 AN1955 C101 JESD22 MRF6S21100N MRF6S21100NBR1 MRF6S21100NR1
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S21100N Rev. 1, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S21100NR1 MRF6S21100NBR1 Designed for W- CDMA base station applications with frequencies from 2110


    Original     		PDF MRF6S21100N MRF6S21100NR1 MRF6S21100NBR1 MRF6S21100NR1 j378 A113 A114 A115 AN1955 C101 JESD22 MRF6S21100N MRF6S21100NBR1

    j327

    Abstract: A113 A114 A115 AN1955 C101 JESD22 MRF7S19100NBR1 MRF7S19100NR1
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S19100N Rev. 1, 6/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S19100NR1 MRF7S19100NBR1 Designed for CDMA base station applications with frequencies from 1930 to


    Original     		PDF MRF7S19100N MRF7S19100NR1 MRF7S19100NBR1 MRF7S19100NR1 j327 A113 A114 A115 AN1955 C101 JESD22 MRF7S19100NBR1

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S18100N Rev. 0, 12/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S18100NR1 MRF6S18100NBR1 Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA and


    Original     		PDF MRF6S18100N MRF6S18100NR1 MRF6S18100NBR1 MRF6S18100N