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    Untitled

    Abstract: No abstract text available
    Text: RFPA2226 2.2GHz to 2.7GHz 2W InGaP AMPLIFIER RFPA2226 Proposed 2.2GHz TO 2.7GHz 2W InGaP AMPLIFIER Package: QFN Features     P1dB =33.5dBm at 5V, 2.4GHz 802.11g 54Mb/s Class AB Performance POUT =26dBm at 2.5% EVM, VCC 5V POUT =27dBm at 2.5% EVM,


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    RFPA2226 RFPA2226 54Mb/s 26dBm 27dBm MCH185A5R6DK MCH182CN104K 600S1R6JW250 PDF

    Untitled

    Abstract: No abstract text available
    Text: SZP-2026Z SZP-2026Z 2.2GHz to 2.7GHz 2W InGaP AMPLIFIER Package: SOF-26 Product Description Features RFMD’s SZP-2026Z is a high linearity single stage class AB Heterojunction Bipolar  P1dB =33.5dBm at 5V, 2.4GHz  802.11g 54Mb/s Class AB Performance


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    SZP-2026Z SOF-26 SZP-2026Z 54Mb/s 26dBm 27dBm SZP-2026Zâ DS110620 PDF

    600S100JW250

    Abstract: cap 10pF 50V 10 0603 X7R 600S2R0JW250 MCH18
    Text: RFPA2226 RFPA2226 2.2GHz to 2.7GHz 2W InGaP AMPLIFIER 2.2GHz TO 2.7GHz 2W InGaP AMPLIFIER Package: QFN Features     P1dB =33.5dBm at 5V, 2.4GHz 802.11g 54Mb/s Class AB Performance POUT =26dBm at 2.5% EVM, VCC 5V POUT =27dBm at 2.5% EVM, VCC 6V


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    RFPA2226 RFPA2226 54Mb/s 26dBm 27dBm MCH185A5R6DK MCH182CN104K 600S1R6JW250 600S100JW250 cap 10pF 50V 10 0603 X7R 600S2R0JW250 MCH18 PDF

    Cap 0603 X7R

    Abstract: SOF-26 SZP-2026Z recommended land pattern for 0402 cap
    Text: SZP-2026Z SZP-2026Z 2.2GHz to 2.7GHz 2W InGaP AMPLIFIER Package: SOF-26 Product Description Features RFMD’s SZP-2026Z is a high linearity single stage class AB Heterojunction Bipolar  Transistor HBT amplifier housed in a proprietary surface-mountable plastic encapsulated package. This HBT amplifier is made with InGaP on GaAs device technology


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    SZP-2026Z SOF-26 SZP-2026Z o026Z" SZP2026Z SZP2026Z-EVB1 SZP2026Z-EVB2 DS091202 Cap 0603 X7R SOF-26 recommended land pattern for 0402 cap PDF

    SZP-2026Z

    Abstract: rf transistor 2.5GHz SOF-26 transistor 2.4GHz amplifier schematic
    Text: SZP-2026Z SZP-2026Z 2.2GHz to 2.7GHz 2W InGaP AMPLIFIER Package: SOF-26 Product Description Features RFMD’s SZP-2026Z is a high linearity single stage class AB Heterojunction Bipolar Transistor HBT amplifier housed in a proprietary surface-mountable plastic encapsulated package. This HBT amplifier is made with InGaP on GaAs device technology


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    SZP-2026Z SOF-26 SZP-2026Z SZP-2026Z-EVB1 SZP-2026Z-EVB2 EDS-104611 rf transistor 2.5GHz SOF-26 transistor 2.4GHz amplifier schematic PDF

    SZP-2026

    Abstract: No abstract text available
    Text: SZP-2026Z SZP-2026Z 2.2GHz to 2.7GHz 2W InGaP AMPLIFIER Package: SOF-26 Product Description Features RFMD’s SZP-2026Z is a high linearity single stage class AB Heterojunction Bipolar Transistor HBT amplifier housed in a proprietary surface-mountable plastic encapsulated package. This HBT amplifier is made with InGaP on GaAs device technology


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    SZP-2026Z SOF-26 SZP-2026Z SZP-2026Z" DS110620 SZP2026ZSQ SZP2026ZSR SZP2026Z SZP-2026 PDF