Untitled
Abstract: No abstract text available
Text: 75 = 75A-600V
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Original
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5A-600V
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PDF
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IXXR110N60B4H1
Abstract: No abstract text available
Text: Advance Technical Information IXXR110N60B4H1 XPTTM 600V GenX4TM w/ Diode VCES IC110 VCE sat tfi(typ) (Electrically Isolated Tab) = = ≤ = 600V 75A 2.0V 27ns Extreme Light Punch Through IGBT for 5-30kHz Switching ISOPLUS247TM Symbol Test Conditions Maximum Ratings
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Original
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5-30kHz
IC110
IXXR110N60B4H1
ISOPLUS247TM
110N60B4
IXXR110N60B4H1
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PDF
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75N60
Abstract: No abstract text available
Text: Preliminary Technical Information IXXH75N60B3D1 XPTTM 600V IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 5-30 kHz Switching = = ≤ = 600V 75A 1.85V 125ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR
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Original
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IXXH75N60B3D1
IC110
125ns
O-247
IF110
062in.
75N60B3
75N60
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PDF
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25A 1200V
Abstract: PM100RLA120 PM150CLA120 PM75CLA120 PM75CLA060 PM75CLB120 transistor 600V 75A PM100CLA060 PM150CLA060 PM200CLA060
Text: Powerex L-Series IPM Grid 7/3/2003 VCES 25A 1200V PM25CLA120 PM25CLB120 600V 1200V Seven-Pack Six-Pack 600V Config *click on the products for additional information PM25RLA120 PM25RLB120 50A 75A 100A 150A 200A 300A PM50CLA060 PM50CLB060 PM75CLA060 PM75CLB060
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Original
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PM25RLA120
PM25RLB120
PM75CLA060
PM75CLB060
PM100CLA060
PM150CLA060
PM200CLA060
PM300CLA060
PM50CLA120
PM50CLB120
25A 1200V
PM100RLA120
PM150CLA120
PM75CLA120
PM75CLA060
PM75CLB120
transistor 600V 75A
PM100CLA060
PM150CLA060
PM200CLA060
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PDF
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information XPTTM 600V IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) IXXH75N60B3D1 Extreme Light Punch Through IGBT for 5-30 kHz Switching = = ≤ = 600V 75A 1.85V 125ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR
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Original
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IC110
IXXH75N60B3D1
125ns
O-247
IF110
75N60B3
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PDF
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Untitled
Abstract: No abstract text available
Text: APTCV60TLM24T3G Three level inverter CoolMOS & Trench + Field Stop IGBT3 Power Module Trench & Field Stop IGBT3 Q2, Q3: VCES = 600V ; IC = 75A @ Tc = 80°C CoolMOS Q1, Q4: VDSS = 600V ; ID = 70A @ Tc = 80°C Application • Solar converter Uninterruptible Power Supplies
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Original
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APTCV60TLM24T3G
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PDF
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SIDC30D60E6
Abstract: No abstract text available
Text: Preliminary SIDC30D60E6 Fast switching diode chip in EMCON-Technology FEATURES: • 600V EMCON technology 70 µm chip • soft , fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR SIDC30D60E6 600V IF 75A A This chip is used for:
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Original
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SIDC30D60E6
C67047-A4679A001
4183M,
SIDC30D60E6
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PDF
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APT0406
Abstract: APT0502 NTC 10 thermistor
Text: APTCV60TLM24T3G Three level inverter CoolMOS & Trench + Field Stop IGBT Power Module Trench & Field Stop IGBT Q2, Q3: VCES = 600V ; IC = 75A @ Tc = 80°C CoolMOS Q1, Q4: VDSS = 600V ; ID = 70A @ Tc = 80°C Application • Solar converter • Uninterruptible Power Supplies
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Original
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APTCV60TLM24T3G
APT0406
APT0502
NTC 10 thermistor
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PDF
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SIGC40T60R3
Abstract: No abstract text available
Text: SIGC40T60R3 3 IGBT Chip FEATURES: • 600V Trench & Field Stop technology • low VCE sat • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling Chip Type SIGC40T60R3 VCE ICn 600V 75A This chip is used for:
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Original
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SIGC40T60R3
Q67050A4347-A101
L7821A,
SIGC40T60R3
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PDF
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Untitled
Abstract: No abstract text available
Text: Preliminary SIDC30D60E6 Fast switching diode chip in EMCON-Technology FEATURES: • 600V EMCON technology 70 µm chip • soft , fast switching • low reverse recovery charge • small temperature coefficient Chip Type SIDC30D60E6 VR 600V IF 75A A This chip is used for:
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Original
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SIDC30D60E6
C67047-A4679sawn
4183M,
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PDF
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Untitled
Abstract: No abstract text available
Text: SIGC40T60R3 3 IGBT Chip FEATURES: • 600V Trench & Field Stop technology • low VCE sat • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling Chip Type SIGC40T60R3 VCE ICn 600V 75A This chip is used for:
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Original
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SIGC40T60R3
Q67050A4347-A101
L7821A,
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PDF
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E80276
Abstract: PM75RVA060
Text: MITSUBISHI MITSUBISHI <INTELLIGENT <INTELLIGENT POWER POWER MODULES> MODULES> PM75RVA060 PM75RVA060 FLAT-BASE FLAT-BASE TYPE TYPE INSULATED INSULATED PACKAGE PACKAGE PM75RVA060 FEATURE • • • • 3φ 75A, 600V Current-sense IGBT for 20kHz switching 30A, 600V Current-sense regenerative brake IGBT
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Original
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PM75RVA060
20kHz
E80276
E80271
PM75RVA060
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PDF
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Untitled
Abstract: No abstract text available
Text: SIGC39T60S 3 IGBT Chip FEATURES: • 600V Trench & Field Stop technology • low VCE sat • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling Chip Type SIGC39T60S VCE ICn 600V 75A This chip is used for:
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Original
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SIGC39T60S
Q67050A4394-A101
L7571D,
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PDF
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Untitled
Abstract: No abstract text available
Text: APTCV60TLM45T3G Three level inverter CoolMOS & Trench + Field Stop IGBT3 Power Module Trench & Field Stop IGBT3 Q2, Q3: VCES = 600V ; IC = 75A @ Tc = 80°C CoolMOS Q1, Q4: VDSS = 600V ; ID = 38A @ Tc = 80°C Application • Solar converter • Uninterruptible Power Supplies
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Original
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APTCV60TLM45T3G
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PDF
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|
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Untitled
Abstract: No abstract text available
Text: APTCV60TLM45T3G Three level inverter CoolMOS & Trench + Field Stop IGBT3 Power Module Trench & Field Stop IGBT3 Q2, Q3: VCES = 600V ; IC = 75A @ Tc = 80°C CoolMOS Q1, Q4: VDSS = 600V ; ID = 38A @ Tc = 80°C Application • Solar converter Uninterruptible Power Supplies
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Original
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APTCV60TLM45T3G
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PDF
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APT0406
Abstract: APT0502
Text: APTCV60TLM45T3G Three level inverter CoolMOS & Trench + Field Stop IGBT Power Module Trench & Field Stop IGBT Q2, Q3: VCES = 600V ; IC = 75A @ Tc = 80°C CoolMOS Q1, Q4: VDSS = 600V ; ID = 38A @ Tc = 80°C Application • Solar converter • Uninterruptible Power Supplies
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Original
|
APTCV60TLM45T3G
APT0406
APT0502
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PDF
|
Untitled
Abstract: No abstract text available
Text: SIGC40T60R3 3 IGBT Chip FEATURES: • 600V Trench & Field Stop technology • low VCE sat • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling Chip Type SIGC40T60R3 VCE ICn 600V 75A This chip is used for:
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Original
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SIGC40T60R3
Q67050A4347-A101
L7821A,
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PDF
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SIDC30D60E6
Abstract: No abstract text available
Text: Preliminary SIDC30D60E6 Fast switching diode chip in EMCON-Technology FEATURES: • 600V EMCON technology 70 µm chip • soft , fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR SIDC30D60E6 600V IF 75A A This chip is used for:
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Original
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SIDC30D60E6
C67047-A4679A001
4183M,
SIDC30D60E6
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Preliminary SIDC30D60E6 Fast switching diode chip in EMCON-Technology FEATURES: • 600V EMCON technology 70 µm chip • soft , fast switching • low reverse recovery charge • small temperature coefficient Chip Type SIDC30D60E6 VR 600V IF 75A A This chip is used for:
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Original
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SIDC30D60E6
C67047-A4679sawn
4183M,
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PDF
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SIDC30D60E
Abstract: No abstract text available
Text: Preliminary SIDC30D60E Fast switching diode chip in EMCON-Technology FEATURES: • 600V EMCON technology 70 µm chip • soft , fast switching • low reverse recovery charge • small temperature coefficient Chip Type VCE SIDC30D60E 600V ICn 75A A This chip is used for:
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Original
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SIDC30D60E
C67047-A4679
4183E,
SIDC30D60E
|
PDF
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI MITSUBISHI <INTELLIGENT <INTELLIGENT POWER POWER MODULES> MODULES> PM75RVA060 PM75RVA060 FLAT-BASE FLAT-BASE TYPE TYPE INSULATED INSULATED PACKAGE PACKAGE PM75RVA060 FEATURE • • • • 3φ 75A, 600V Current-sense IGBT for 20kHz switching 30A, 600V Current-sense regenerative brake IGBT
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Original
|
PM75RVA060
20kHz
E80276
E80271
131ROL
|
PDF
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SIDC30D60E6
Abstract: No abstract text available
Text: Preliminary SIDC30D60E6 Fast switching diode chip in EMCON-Technology FEATURES: • 600V EMCON technology 70 µm chip • soft , fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR SIDC30D60E6 600V IF 75A A This chip is used for:
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Original
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SIDC30D60E6
C67047-A4679A001
4183M,
SIDC30D60E6
|
PDF
|
Untitled
Abstract: No abstract text available
Text: APTCV60TLM24T3G Three level inverter CoolMOS & Trench + Field Stop IGBT3 Power Module Trench & Field Stop IGBT3 Q2, Q3: VCES = 600V ; IC = 75A @ Tc = 80°C CoolMOS Q1, Q4: VDSS = 600V ; ID = 70A @ Tc = 80°C Application • Solar converter • Uninterruptible Power Supplies
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Original
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APTCV60TLM24T3G
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PDF
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IRGPC56
Abstract: No abstract text available
Text: INTERNATIONAL RECTIFIER SbE D • 4fl5S45S OOlDbaT 1 ■ Data Sheet No. PD<9.662 T - 3^-63 \. INSULATED GATE BIPOLAR TRANSISTOR International Rectifier IRGPC56 600V, 7SA 600V, 75A, TO-247AC IGBT FEATURES International Rectifier’s IRG series of Insulated Gate
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OCR Scan
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4fl5S45S
IRGPC56
O-247AC
554S2
0G10b43
IRGPC56
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PDF
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