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    600V IGBT CURRENT SENSING CHANNEL DRIVER Search Results

    600V IGBT CURRENT SENSING CHANNEL DRIVER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TLP294-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), AC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TLP295-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), DC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4204F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4162F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation

    600V IGBT CURRENT SENSING CHANNEL DRIVER Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    12n60d1c

    Abstract: 12n60d1 600V Current Sensing N-Channel IGBT equivalent 12n60d1c ICL7667 HGTB12N60D1C 10A 600V MOS 12A, 600V Current Sensing N-Channel IGBT HGTB12N60D1C equivalent TS-001AA Package
    Text: S E M I C O N D U C T O R HGTB12N60D1C 12A, 600V Current Sensing N-Channel IGBT April 1995 Features • • • • • • • Package 12A, 600V rDS ON . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.27Ω


    Original     		PDF HGTB12N60D1C 100ns 100oC. TS-001AA O-220) HGTB12N60D1C ICL7667 12n60d1c 12n60d1 600V Current Sensing N-Channel IGBT equivalent 12n60d1c ICL7667 10A 600V MOS 12A, 600V Current Sensing N-Channel IGBT HGTB12N60D1C equivalent TS-001AA Package

    IR2110 amplifier circuit diagram class D

    Abstract: 3 phase inverter ic ir2136 IR2104 APPLICATION NOTE IR2104 SCHEMATIC 10kw inverter Class d SCHEMATIC 10kw POWER SUPPLY WITH IGBTS ir2110 class d amp 3 phase AC servo drive schematic 3 phase scr firing circuit for dc servo driver IR2109 application note 3 phase bridge scr drive circuit diagram
    Text: POWER CONVERSION PROCESSOR TM ARCHITECTURE AND HVIC PRODUCTS FOR MOTOR DRIVE IR’s Motor Drive IC family supports the emerging Power Conversion Processor TM Architecture and delivers new level of ruggedness, compact size and lower EMI. Monolithic integration of high voltage circuits for gate driving with protection, soft


    Original     		PDF 1200Vps IR2110 amplifier circuit diagram class D 3 phase inverter ic ir2136 IR2104 APPLICATION NOTE IR2104 SCHEMATIC 10kw inverter Class d SCHEMATIC 10kw POWER SUPPLY WITH IGBTS ir2110 class d amp 3 phase AC servo drive schematic 3 phase scr firing circuit for dc servo driver IR2109 application note 3 phase bridge scr drive circuit diagram

    Untitled

    Abstract: No abstract text available
    Text: MIL-PRF-38534 CERTIFIED M.S.KENNEDY CORP. 600V ISOLATED HALF BRIDGE GATE DRIVER 4900 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 FEATURES: Floating Channels up to 600V Up to 8 Amp Peak Source and Sink Current De-Saturation Protection/Shutdown Individual ON, OFF and Soft Shutdown Pins for Each IGBT Gate


    Original     		PDF MIL-PRF-38534 p4900

    MSK4900

    Abstract: IGBT desaturation protection -55C to 125C
    Text: MIL-PRF-38534 CERTIFIED M.S.KENNEDY CORP. 600V ISOLATED HALF BRIDGE GATE DRIVER 4900 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 FEATURES: Floating Channels up to 600V Up to 8 Amp Peak Source and Sink Current De-Saturation Protection/Shutdown Individual ON, OFF and Soft Shutdown Pins for Each IGBT Gate


    Original     		PDF MIL-PRF-38534 MSK4900 IGBT desaturation protection -55C to 125C

    Untitled

    Abstract: No abstract text available
    Text: MIL-PRF-38534 CERTIFIED M.S.KENNEDY CORP. 600V ISOLATED HALF BRIDGE GATE DRIVER 4900 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 FEATURES: Floating Channels up to 600V Up to 8 Amp Peak Source and Sink Current De-Saturation Protection/Shutdown Individual ON, OFF and Soft Shutdown Pins for Each IGBT Gate


    Original     		PDF MIL-PRF-38534 MSK4900

    MSK4900

    Abstract: No abstract text available
    Text: MIL-PRF-38534 AND 38535 CERTIFIED FACILITY 600V ISOLATED HALF BRIDGE GATE DRIVER M.S.KENNEDY CORP. 4707 Dey Road Liverpool, N.Y. 13088 4900 315 701-6751 FEATURES: Floating Channels up to 600V Up to 8 Amp Peak Source and Sink Current De-Saturation Protection/Shutdown


    Original     		PDF MIL-PRF-38534 MSK4900

    igbt desaturation driver schematic

    Abstract: No abstract text available
    Text: MIL-PRF-38534 CERTIFIED FACILITY 600V ISOLATED HALF BRIDGE GATE DRIVER M.S.KENNEDY CORP. 4707 Dey Road Liverpool, N.Y. 13088 4900 315 701-6751 FEATURES: Floating Channels up to 600V Up to 8 Amp Peak Source and Sink Current De-Saturation Protection/Shutdown


    Original     		PDF MIL-PRF-38534 MSK4900 igbt desaturation driver schematic

    854832

    Abstract: No abstract text available
    Text: MIL-PRF-38534 CERTIFIED FACILITY 600V ISOLATED HALF BRIDGE GATE DRIVER M.S.KENNEDY CORP. 4707 Dey Road Liverpool, N.Y. 13088 4900 315 701-6751 FEATURES: Floating Channels up to 600V Up to 8 Amp Peak Source and Sink Current De-Saturation Protection/Shutdown


    Original     		PDF MIL-PRF-38534 MSK4900 854832

    Untitled

    Abstract: No abstract text available
    Text: MIL-PRF-38534 CERTIFIED FACILITY 600V ISOLATED HALF BRIDGE GATE DRIVER M.S.KENNEDY CORP. 4707 Dey Road Liverpool, N.Y. 13088 4900 315 701-6751 FEATURES: Floating Channels up to 600V Up to 8 Amp Peak Source and Sink Current De-Saturation Protection/Shutdown


    Original     		PDF MIL-PRF-38534 MSK4900

    Untitled

    Abstract: No abstract text available
    Text: MIL-PRF-38534 AND 38535 CERTIFIED FACILITY 600V ISOLATED HALF BRIDGE GATE DRIVER M.S.KENNEDY CORP. 4707 Dey Road Liverpool, N.Y. 13088 4900 315 701-6751 FEATURES: Floating Channels up to 600V Up to 8 Amp Peak Source and Sink Current De-Saturation Protection/Shutdown


    Original     		PDF MIL-PRF-38534 MSK4900

    igbt, thermal design manual

    Abstract: No abstract text available
    Text: MIL-PRF-38534 AND 38535 CERTIFIED FACILITY 600V ISOLATED HALF BRIDGE GATE DRIVER M.S.KENNEDY CORP. 4707 Dey Road Liverpool, N.Y. 13088 4900 315 701-6751 FEATURES: Floating Channels up to 600V Up to 8 Amp Peak Source and Sink Current De-Saturation Protection/Shutdown


    Original     		PDF MIL-PRF-38534 MSK4900 igbt, thermal design manual

    IR2122

    Abstract: IR2122S 600V Current Sensing N-Channel IGBT 600V IGBT Current Sensing Channel Driver
    Text: Preliminary Data Sheet No. PD60130-I IR2122 S CURRENT SENSING SINGLE CHANNEL DRIVER Features Product Summary • Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 10 to 20V


    Original     		PDF PD60130-I IR2122 IR2122 IR2122S IR2122S 600V Current Sensing N-Channel IGBT 600V IGBT Current Sensing Channel Driver

    IR2122

    Abstract: tb31224cf IR2122S 600V Current Sensing N-Channel IGBT
    Text: Preliminary Data Sheet No. PD60130H IR2122 CURRENT SENSING SINGLE CHANNEL DRIVER Features • Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 10 to 20V


    Original     		PDF PD60130H IR2122 IR2122 tb31224cf IR2122S 600V Current Sensing N-Channel IGBT

    IR2122

    Abstract: IR2122S MP150 vb 399 014 IR MOSFET Transistor
    Text: Data Sheet No. PD-6.130-G IR2122 CURRENT SENSING SINGLE CHANNEL DRIVER Features • Floating channel designed for bootstrap • • • • • operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 10 to 20V


    Original     		PDF 130-G IR2122 IR2122 IR2122S MP150 vb 399 014 IR MOSFET Transistor

    3 phase IGBT inverter design by ir2130

    Abstract: IR2110 APPLICATION CIRCUIT FOR INVERTERS IR2104 APPLICATION NOTE variable frequency drive circuit diagram IR2113 Inverter 10kf12 3 phase inverters circuit diagram igbt 1 phase inverter using igbt 50V 5A IR2110 driver CIRCUIT FOR INVERTERS ir2113 isolation circuit diagram
    Text: NEW 1200-V INTEGRATED CIRCUIT CHANGES THE WAY 3-PHASE MOTOR DRIVE INVERTERS ARE DESIGNED David Tam, International Rectifier, El Segundo, California New 1200-V high voltage integrated circuit technology and design advances enable a whole new class of 3-phase motor drive inverters that set new benchmarks for efficiency, compactness and


    Original     		PDF 200-V IR2233, 460VAC IRPT2051) IR2233 460Vrms, 3 phase IGBT inverter design by ir2130 IR2110 APPLICATION CIRCUIT FOR INVERTERS IR2104 APPLICATION NOTE variable frequency drive circuit diagram IR2113 Inverter 10kf12 3 phase inverters circuit diagram igbt 1 phase inverter using igbt 50V 5A IR2110 driver CIRCUIT FOR INVERTERS ir2113 isolation circuit diagram

    transistor B123

    Abstract: ir2127 an 600V Current Sensing N-Channel IGBT IR2127S IR2127 MP150 igbt, thermal design manual
    Text: Previous Datasheet Index Next Data Sheet Data Sheet No. PD-6.036D IR2127 CURRENT SENSING SINGLE CHANNEL DRIVER Features Product Summary n Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune


    Original     		PDF IR2127 IR2127 EME6300 MP150 MP190 B-127 B-128 transistor B123 ir2127 an 600V Current Sensing N-Channel IGBT IR2127S igbt, thermal design manual

    IR2127

    Abstract: ir2127s pd60143 PD60143I
    Text: Preliminary Data Sheet No. PD60143I IR2127/IR2128 CURRENT SENSING SINGLE CHANNEL DRIVER Features Product Summary • Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 12 to 20V


    Original     		PDF PD60143I IR2127/IR2128 IR2127) IR2128) IR2127/IR2128 IR2127 ir2127s pd60143 PD60143I

    IR2122

    Abstract: IR2122S MS-012AA
    Text: Preliminary Data Sheet No. PD60130-J IR2122 S CURRENT SENSING SINGLE CHANNEL DRIVER Features Product Summary • Floating channel designed for bootstrap operation • • • • • Fully operational to +600V Tolerant to negative transient voltage dV/dt immune


    Original     		PDF PD60130-J IR2122 5M-1994. MS-012AA. MS-012AA) IR2122S MS-012AA

    MP150

    Abstract: 042D IR2128 IR2128S PD6042 b132 transistor
    Text: Previous Datasheet Index Next Data Sheet Data Sheet No. PD-6.042D IR2128 CURRENT SENSING SINGLE CHANNEL DRIVER Features Product Summary n Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune


    Original     		PDF IR2128 IR2128 EME6300 MP150 MP190 B-133 B-134 042D IR2128S PD6042 b132 transistor

    600V Current Sensing N-Channel IGBT

    Abstract: Current Sensing N-Channel IGBT HGTB12N60D1C equivalent 12A600V
    Text: Œ ï ^ « 1 HGTB12N60D1C 12A, 600V Current Sensing N-Channel IGBT December 1993 Features Package • 12A.600V JEDEC TS-001AA 5 LEAD TO-220 TOP VIEW • r D S (O N) .0.27V


    OCR Scan     		PDF HGTB12N60D1C TS-001AA O-220) 100ns HGTB12N60D1C 600V Current Sensing N-Channel IGBT Current Sensing N-Channel IGBT HGTB12N60D1C equivalent 12A600V

    12n60d1

    Abstract: 12n60d1c 600V Current Sensing N-Channel IGBT equivalent 12n60d1c HGTB12N60D1C 12n60d
    Text: HGTB12N60D1C 12A, 600V Current Sensing N-Channel IGBT Package Features • 12A, 600V JE D E C T S -001A A 5 LEAD TO -220 • r • Low VCe(SAT) at 25 A . 2.5V (Typ)


    OCR Scan     		PDF HGTB12N60D1C 100ns -001A HGTB12N60D1C 12n60d1 12n60d1c 600V Current Sensing N-Channel IGBT equivalent 12n60d1c 12n60d

    Untitled

    Abstract: No abstract text available
    Text: bflE J> HARRIS SEMICOND SECTOR • 43G2E71 0DSD2Sn ■ HAS HGTB12N60D1C 12A, 600V Current Sensing N-Channel IGBT Decem ber 1993 Features Package • 12 A ,600V • JEDEC TS-001AA 5 LEAD TO-220 TOP VIEW r D S (O N ) .0.27V


    OCR Scan     		PDF 43G2E71 HGTB12N60D1C TS-001AA O-220) 100ns 60jia ICL7667

    12n60d1c

    Abstract: 12n60d1 equivalent 12n60d1c HGTB12N60D1C equivalent HGTB12N60D1C D05QSS3 BT 33C 12N60 Harris Semiconductor to220 power transistor equivalent+12n60d1c
    Text: HARRIS SEMICOND SECTOR fflhfAfS « böE D • M302E71 0QSD25D 2Sb ■ HAS HGTB12N60D1C 12A, 600V Current Sensing N-Channel IGBT December 1993 Features Package • 12 A ,600V JEDEC TS-001AA 5 LEAD TO-220 TOP VIEW • r DS(O N) . 0.27V


    OCR Scan     		PDF M302271 0QSD25D HGTB12N60D1C 100ns HGTB12N60D1C M3D2B71 D05QSS3 12N60D1C 12n60d1c 12n60d1 equivalent 12n60d1c HGTB12N60D1C equivalent BT 33C 12N60 Harris Semiconductor to220 power transistor equivalent+12n60d1c

    Untitled

    Abstract: No abstract text available
    Text: MIL-PRF-38534 CERTIFIED FA CILITY 600V ISOLATED HALF BRIDGE GATE DRIVER M.S.KENNEDY CORP. 4900 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 FEATURES: Floating Channels up to 600V Up to 8 Amp Peak Source and Sink Current De-Saturation Protection/Shutdown


    OCR Scan     		PDF MIL-PRF-38534 SK4900 IL-PRF-38534