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    600V P-CHANNEL ENHANCEMENT MODE POWER MOSFET Search Results

    600V P-CHANNEL ENHANCEMENT MODE POWER MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    600V P-CHANNEL ENHANCEMENT MODE POWER MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    AP4002P

    Abstract: No abstract text available
    Text: AP4002S/P RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET 100% Avalanche Test BVDSS D Fast Switching Characteristics Simple Drive Requirement G 600V RDS ON 5 ID 2A S Description Advanced Power MOSFETs from APEC provide the designer with


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    AP4002S/P O-263 AP4002P) O-220 O-220 4002P AP4002P PDF

    NF925

    Abstract: ISOPLUS247
    Text: Preliminary Technical Information PolarPTM Power MOSFET IXTR32P60P VDSS ID25 RDS on = = ≤ - 600V - 18A Ω 385mΩ P-Channel Enhancement Mode Avalanche Rated ISOPLUS247 (IXTR) E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 600


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    IXTR32P60P ISOPLUS247 E153432 100ms 32P60P NF925 ISOPLUS247 PDF

    ISOPLUS247

    Abstract: 16P60P
    Text: Preliminary Technical Information PolarPTM Power MOSFET IXTR16P60P VDSS ID25 RDS on = - 600V = - 10A ≤ 790mΩ Ω P-Channel Enhancement Mode Avalanche Rated ISOPLUS247 (IXTR) E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 600


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    IXTR16P60P ISOPLUS247 E153432 100ms, 16P60P ISOPLUS247 16P60P PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information PolarPTM Power MOSFET IXTN32P60P VDSS ID25 RDS on P-Channel Enhancement Mode Avalanche Rated = = ≤ - 600V - 32A Ω 350mΩ miniBLOC, SOT-227 (IXTN) E153432 Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings


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    IXTN32P60P OT-227 E153432 2500ias 100ms 32P60P PDF

    IXTK32P60P

    Abstract: IXTX32P60P PLUS247 NF925
    Text: Preliminary Technical Information PolarPTM Power MOSFET IXTK32P60P IXTX32P60P VDSS ID25 = = ≤ RDS on - 600V - 32A Ω 350mΩ P-Channel Enhancement Mode Avalanche Rated TO-264 (IXTK) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 600 V


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    IXTK32P60P IXTX32P60P O-264 120/rating 100ms 32P60P IXTK32P60P IXTX32P60P PLUS247 NF925 PDF

    Untitled

    Abstract: No abstract text available
    Text: AP10N70R/P RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET 100% Avalanche Test D Fast Switching Characteristic Simple Drive Requirement BVDSS 600V RDS ON 0.6 ID G 10A S Description AP10N70 series are specially designed as main switching devices for


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    AP10N70R/P AP10N70 265VAC O-220 O-262 O-220 10N70R PDF

    605A

    Abstract: No abstract text available
    Text: APT60M75PVR 600V 60.5A 0.075Ω POWER MOS V P-Pack Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also


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    APT60M75PVR 605A PDF

    Untitled

    Abstract: No abstract text available
    Text: APT60M75PVR W 600V 60.5A 0.075W POWER MOS V P-Pack Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also


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    APT60M75PVR PDF

    3471A

    Abstract: 601R6BN APT551R
    Text: A dvanced P o w er TECHNOLOGY O D Ô S POWER MOS IV APT601R3BN APT551R3BN APT601R6BN APT551R6BN 600V 550V 600V 550V 7.5A 1.3012 7.5A 1.30Q 6.5A 1.60Q 6.5A 1.60Q N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: Tc = 25°C unless otherwise specified.


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    APT601R3BN APT551R3BN APT601R6BN APT551R6BN 551R3BN 601R3BN 551R6BN 601R6BN APT601R 3/551R3/601R6/551R6BN 3471A APT551R PDF

    6045h

    Abstract: No abstract text available
    Text: ADVANCED POWER TECHNOLOGY blE D • DZS?^ 000GÖ21 IS? « A V P ADVANCED POW ER T e c h n o lo g y 9 POWER MOS IV _ APT6040HN 600V 16.5A 0.40Q APT5540HN 550V 16.5A 0.40Q APT6045HN 600V 15.5A 0.45D APT5545HN550V15.5A 0.45H N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS


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    APT6040HN APT5540HN APT6045HN APT5545HN550V15 5540HN 6040HN 554SHN 6045HN APT6040/5540/6045/5545HN APT5S40/S545HI 6045h PDF

    APT601R3KN

    Abstract: R6KN APT601R6KN
    Text: ADVANCED P OWE R TECHNOLOGY blE D 0557^ 0^ 000071b =10i4 IAVP A dvanced P o w er Te c h n o l o g y APT601R3KN APT601R6KN 600V 6.5A 1.30Q 600V 5.8A 1.60Q POWER MOS IV N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol All Ratings: Tc = 25°C unless otherwise specified.


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    000071b APT601R3KN APT601R6KN O-220AC R6KN PDF

    Untitled

    Abstract: No abstract text available
    Text: A dvanced P o w er Te c h n o l o g y * Q D APT6015JN APT6018JN O S ISOTOP* 600V 600V 38.0A 0.15Í2 35.0A 0.18Q "UL Recognized" File No. E145592 S POWER MOS IVe P ÏÏ= IE ï# T T 51 N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol


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    APT6015JN APT6018JN E145592 6018JN 6015JN OT-227 PDF

    Untitled

    Abstract: No abstract text available
    Text: ADVANCED POWER TECHNOLOGY blE D • DE S 7‘l D t1 0GGG773 b 7 T « A V P ADVANCED P ow er T e c h n o lo g y 9 POWER MOS IV APT601R3CN 600V APT551R3CN 550V APT601R6CN 600V APT551R6CN 550V 6.5A 6.5A 5.5A 5.5A 1.30Q 1.30Q 1.60Q 1.60Q N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS


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    0GGG773 APT601R3CN APT551R3CN APT601R6CN APT551R6CN 551R3CN 601R3CN 551R6CN 601R6CN APT601R3/601R6CN PDF

    APT6060BNR

    Abstract: APT6070BNR APT6070BN
    Text: A dvanced P o w er Te c h n o lo g y O D O APT6060BNR APT6070BNR S POWER MOS IV' 600V 13.0A 0.600 600V 12.0A 0.70Í2 AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS All Ratings: Tc = 25°C unless otherwise specified.


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    APT6060BNR APT6070BNR APT6060BNR APT6070BNR MIL-STD-750 O-247AD APT6070BN PDF

    Untitled

    Abstract: No abstract text available
    Text: • R ADVANCED W ZA P o w er Te c h n o lo g y APT6030BNR APT6033BNR GFvvER MOS l'Tiä 600V 23.0A 0.30i> 600V 22.0A 0.3312 AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: Tc = 25°C unless otherwise specified.


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    APT6030BNR APT6033BNR APT6033BNR APT6030/6033BNR O-247AD PDF

    6030BN

    Abstract: 6033BN lr 2905 z DLS FT 031 APT6030BN APT6033BN
    Text: A d v a n ced P o w er Te c h n o l o g y * O D O S POWER MOS IV APT6030BN 600V 23.0A 0.300 APT6033BN 600V 22.0A 0.33Q N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: Tc = 25°C unless otherwise specified. APT 6030BN APT


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    APT6030BN APT6033BN 6030BN 6033BN Numb12, O-247AD lr 2905 z DLS FT 031 PDF

    Untitled

    Abstract: No abstract text available
    Text: A d v a n ced P o w er Te c h n o l o g y 8 O D O S POWER MOS IV APT6030BN 600V 23.0A 0.30Q APT6033BN 600V 22.0A 0.330 N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: Tc = 25°C unless otherwise specified. APT 6030BN APT


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    APT6030BN APT6033BN 6030BN 6033BN O-247AD APT6030/6033BN PDF

    ff1131

    Abstract: No abstract text available
    Text: • r W . jA ADVANCED P ow er Te c h n o lo g y * APT601R3KN 600V 6.5A 1.300 APT601R6KN 600V 5.8A 1.60 £2 O D O S POWER MOS IV N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIM UM RATING S Sym bol V All Ratings: Tc = 25°C unless otherwise specified.


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    APT601R3KN APT601R6KN APT601R3/601R6KN O-220AB ff1131 PDF

    APT6040BNR

    Abstract: No abstract text available
    Text: O A d van ced P o w er Te c h n o l o g y O O s APT6040BNR 600V 18.0A 0.400 APT6045BNR 600V 17.0A 0.45S2 POWER MOS IV' UIS RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS All Ratings: Tc = 25°C unless otherwise specified.


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    APT6040BNR APT6045BNR APT6040BNR APT6045BNR O-247AD PDF

    DLS FT 031

    Abstract: TL 084L APT6030BNR 25CC APT6033BNR
    Text: A d van ced P o w er Te c h n o l o g y O D APT6030BNR APT6033BNR Ô S POWER MOS IV® 600V 23.0A 0.30U 600V 22.0A 0.33Í2 AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol All Ratings: T c = 25°C unless otherwise specified.


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    APT6030BNR APT6033BNR APT603Q/6033BNR O-247AD 0001S1S DLS FT 031 TL 084L 25CC PDF

    APT6030BNR

    Abstract: No abstract text available
    Text: A d va n ced P o w er Te c h n o l o g y O D APT6030BNR APT6033BNR O s 600V 23.0A 0.3012 600V 22.0A 0.33Ü POWER MOS IVe UIS RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V OSS D Continuous Drain Current @ Tc V V Parameter


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    APT6030BNR APT6033BNR APT6033BNR MIL-STD-750 O-247AD PDF

    Untitled

    Abstract: No abstract text available
    Text: ADVANCED POtdER TECHNOLOGY b lE D • 000071b =104 ■ AVP ■R A d v a n c ed W /Æ P o w e r Te c h n o l o g y APT601R3KN APT601R6KN 600V 6.5A 1.30Q 600V 5.8A 1.60Ü POWER MOS IV N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS


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    000071b APT601R3KN APT601R6KN O-22QAC PDF

    APT6040BNR

    Abstract: No abstract text available
    Text: O D O S A dvanced P ow er Te c h n o l o g y APT6040BNR APT6045BNR G B 'íitK MOS r ü 600V 18.0A 0.40Q 600V 17.0A 0.45U AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS >D Parameter APT6040BNR APT6045BNR UNIT


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    APT6040BNR APT6045BNR APT6040/6045BNR O-247AD PDF

    lm 5560

    Abstract: No abstract text available
    Text: A dvanced P ow er T e c h n o lo g y 9 Q D Ô S POWER MOS IVe APT6060BN APT5560BN APT6070BN APT5570BN 600V 550V 600V 550V 13.0A 13.0A 12.0A 12.0A 0.60Í2 0.60Q 0.70Q 0.70Q N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: Tc = 25°C unless otherwise specified.


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    APT6060BN APT5560BN APT6070BN APT5570BN 5560BN 6060BN 5570BN 6070BN APT6060/5560/6070/5570BN APT6060/6070BN lm 5560 PDF