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    600V PNP SWITCHING Search Results

    600V PNP SWITCHING Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SA1213 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-2 A / hFE=70~240 / VCE(sat)=-0.5 V / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    2SA1943 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-230 V / IC=-15 A / hFE=55~160 / VCE(sat)=-3.0 V / TO-3P(L) Visit Toshiba Electronic Devices & Storage Corporation
    TTA012 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTA004B Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-160 V / IC=-1.5 A / hFE=140~280 / VCE(sat)=-0.5 V / TO-126N Visit Toshiba Electronic Devices & Storage Corporation
    TTA2070 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-1 A / hFE=200~500 / VCE(sat)=-0.20V / tf=90 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    600V PNP SWITCHING Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    pnp transistor 600V

    Abstract: KTA1716 600v pnp switching 600V PNP
    Text: KEC SEMICONDUCTOR TECHNICAL DATA KOREA ELECTRONICS CO.,LTD. KTA1716 EPITAXIAL PLANAR PNP TRANSISTOR HIGH-VOLTAGE SWITCHING TRANSISTOR TELEPHONE POWER-SUPPLY USE. FEATURES • High Breakdown Voltage. : VCeo=-600V • Low V cE sat (Typ. -0.25V) • Fast Switching.


    OCR Scan     		KTA1716 -600V -300mA, -60mA) -600V, 100mA --300mA, -60mA pnp transistor 600V KTA1716 600v pnp switching 600V PNP PDF

    pnp transistor 600V

    Abstract: 600V PNP
    Text: SEMICONDUCTOR TECHNICAL DATA KTA1716 EPITAXIAL PLANAR PNP TRANSISTOR HIGH-VOLTAGE SWITCHING TRANSISTOR TELEPHONE POWER-SUPPLY USE. FEATURES • High Breakdown Voltage. : VCeo=-600V • Low V cE sat (Typ. -0.25V) • Fast Switching. • Wide SOA. ( I c = -300mA,


    OCR Scan     		-600V KTA1716 -300mA, -60mA) 100mA -60mA -50mA pnp transistor 600V 600V PNP PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTA1807D/L TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR HIGH VOLTAGE SWITCHING. POWER SUPPLY SWITCHING FOR TELEPHONES. A FEATURES I C J D High Voltage : VCEO=-600V. High Speed Switching Time. 1.0 s IC=-0.5A B : tf Low Collector Emitter Saturation Voltage.


    Original     		KTA1807D/L -600V. -60mA) PDF

    KTA1807D

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTA1807D/L TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR HIGH VOLTAGE SWITCHING. POWER SUPPLY SWITCHING FOR TELEPHONES. A FEATURES I C High Voltage : VCEO=-600V. J : tf D High Speed Switching Time. B 1.0 s IC=-0.5A Low Collector Emitter Saturation Voltage.


    Original     		KTA1807D/L -600V. -60mA) 150PULSE) KTA1807D PDF

    TR0007A

    Abstract: STX6905 STX7905 pnp transistor 600V transistor A 562
    Text: PRELIMINARY STX6905 SOLID STATE DEVICES, INC. 14005 Stage Road * Santa Fe Springs, Ca 90670 Phone: 562 404-4474 * Fax: (562) 404-1773 1 AMP 600 VOLTS PNP TRANSISTOR DESIGNER'S DATA SHEET FEATURES: • • • • • • BVCBO 600V. Fast Switching. Low Leakage.


    Original     		STX6905 200oC STX7905. 20uADC) 600VDC) 25mADC, 50mADC 10VDC, 30VDC TR0007A STX6905 STX7905 pnp transistor 600V transistor A 562 PDF

    BC5508

    Abstract: 6CW66 BC5588 BC8488 TRANSISTOR bc5508 1GW NPN 8C546 smd transistor marking 1gw 1gw transistor SMD Transistors 1gw
    Text: Selection Guide Page Small Signal Transistors 42 Small Signal MOSFETs 43 Junction FETs 44 Power Transistors 49 Switching Diodes 50 Schottky Diodes 51 Low Leakage Diodes 52 Stabistor Diodes 52 Zener Diodes 53 Transient Voltage Suppressors TVS 57 Current Limiting Diodes


    OCR Scan     		OT-23 350mW CMPTB099 CMPT2222A trK1000V) CMPS5064 OT-23 OT-89 CQ89D CQ89M BC5508 6CW66 BC5588 BC8488 TRANSISTOR bc5508 1GW NPN 8C546 smd transistor marking 1gw 1gw transistor SMD Transistors 1gw PDF

    contactor B45

    Abstract: 156-B30CBP 156-B20CB3 varistor 275V AC hp 15 star delta control 3phase 156-b20ab1 156-B30AV1 156-B32CB3 156-B20CA3 156-B30AC1
    Text: SELECTION GUIDE BULLETIN 156-B Solid-State Contactors Bulletin 156 Solid-State Contactors Product Overview/Product Selection Table of Contents Bulletin 156 — Solid-State Contactors The Bulletin 156 Solid-State Contactors are ideal replacements for electro-mechanical contactors where fast and demanding switching of


    Original     		156-B 156-SG002C-EN-E 156-SG002B-EN-E contactor B45 156-B30CBP 156-B20CB3 varistor 275V AC hp 15 star delta control 3phase 156-b20ab1 156-B30AV1 156-B32CB3 156-B20CA3 156-B30AC1 PDF

    INT-944

    Abstract: AN983 INT990 IRF 949 C50U IRGPC50U IRGBC40U P channel 600v 20a IGBT sec irf840 AN-983
    Text: Index AN-983 v.Int IGBT Characteristics (HEXFET is a trademark of International Rectifier) Topics covered: How the IGBT complements the MOSFET Silicon structure and equivalent circuit Conduction characteristics and “switchback” Switching characteristics


    Original     		AN-983 INT-944 AN983 INT990 IRF 949 C50U IRGPC50U IRGBC40U P channel 600v 20a IGBT sec irf840 AN-983 PDF

    INT-944

    Abstract: Equivalent transistors for IRGPC50U IRF 949 AN983 all transistor IRF 310 INT-990 irgbc20u Similar 7A, 100v fast recovery diode LOW FORWARD VOLTAGE DROP DIODE RECTIFIER mosfet 10a 600v
    Text: AN-983 v.Int IGBT Characteristics (HEXFET is a trademark of International Rectifier) Topics covered: How the IGBT complements the MOSFET Silicon structure and equivalent circuit Conduction characteristics and “switchback” Switching characteristics


    Original     		AN-983 1000C, INT-944 Equivalent transistors for IRGPC50U IRF 949 AN983 all transistor IRF 310 INT-990 irgbc20u Similar 7A, 100v fast recovery diode LOW FORWARD VOLTAGE DROP DIODE RECTIFIER mosfet 10a 600v PDF

    Flyback Transformers SANYO TV

    Abstract: RD1004 2SC5707 uhf 150w mosfet 12v bfl4006 2SC5706 equivalent Si sw diode 20V 0.2A SOT323 SSFP package BBS3002 tv tube charger circuit diagrams
    Text: Discrete Devices 2010-8 Mobile Equipment • Application Block ■ Charger [GSM, UMTS] Charger DC-DC Converter / Load SW P3 Down Converter Low end P6 5 to 6V 0.5 to 1A CPU AC Adapter AC Adapter [CDMA2000] Q2 Q3 +B D2 Q1 System AC Adapter RF Block Down Converter (High end)


    Original     		CDMA2000] Flyback Transformers SANYO TV RD1004 2SC5707 uhf 150w mosfet 12v bfl4006 2SC5706 equivalent Si sw diode 20V 0.2A SOT323 SSFP package BBS3002 tv tube charger circuit diagrams PDF

    Untitled

    Abstract: No abstract text available
    Text: UTC 2SA1627 PNP EPITAXIAL SILICON TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR DESCRIPTION The UTC 2SA1627 is designed for general purpose amplifier and high speed switching applications. FEATURES *High voltage *Low collector saturation voltage. *High-speed switching


    Original     		2SA1627 2SA1627 O-126 QW-R204-010 PDF

    Untitled

    Abstract: No abstract text available
    Text: UTC 2SA1627A PNP EPITAXIAL SILICON TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR DESCRIPTION The UTC 2SA1627A is designed for general purpose amplifier and high speed switching applications. FEATURES *High voltage *Low collector saturation voltage. 1 *High-speed switching


    Original     		2SA1627A 2SA1627A O-126C QW-R217-004 PDF

    pnp transistor 600V

    Abstract: PNP -600v
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SA1627A Preliminary PNP EPITAXIAL SILICON TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR 1 „ TO-126C DESCRIPTION The UTC 2SA1627A is designed for general purpose amplifier and high speed switching applications. „ FEATURES * High voltage


    Original     		2SA1627A O-126C 2SA1627A O-126 2SA1627AL-T60-K 2SA1627AG-T60-K 2SA1627AL-T6C-K 2SA1627AG-T6C-K O-126 O-126C pnp transistor 600V PNP -600v PDF

    BZX85C12V

    Abstract: TOSHIBA 2N3055 bta41-600b application BTA41-600B firing circuit TAB 429 H toshiba BZX85C20V SCR tyn612 pin configuration picaxe TYN612 specification 2SA1085E
    Text: SEMICONDUCTORS DISCRETE DEVICES Cathode Anode DO-15 DO-201AD 6.8 x 3.5mm 9.5 x 5.3mm Anode Cathode TO-220AC Fast recovery diodes page 427 Schottky power diodes page 428 Isolated tab triacs page 430 Anode 1 Gate Anode 2 Bridge rectifiers Current regulating diodes


    Original     		DO-15 DO-201AD O-220AC T0202-3 STGP3NB60HD* STGP7NB60HD* STGP3NB60HD STGP7NB60HD BZX85C12V TOSHIBA 2N3055 bta41-600b application BTA41-600B firing circuit TAB 429 H toshiba BZX85C20V SCR tyn612 pin configuration picaxe TYN612 specification 2SA1085E PDF

    PNP -600v

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SA1627A PNP EPITAXIAL SILICON TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR 1 „ TO-252 DESCRIPTION The UTC 2SA1627A is designed for general purpose amplifier and high speed switching applications. 1 „ TO-126 FEATURES * High voltage


    Original     		2SA1627A O-252 2SA1627A O-126 O-126C 2SA1627AL-x-T60-K 2SA1627AG-x-T60-K 2SA1627AL-x-T6C-K 2SA1627AG-x-T6C-K 2SA1627AL-x-TN3-R PNP -600v PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SA1627A PNP SILICON TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR 1 „ TO-252 DESCRIPTION The UTC 2SA1627A is designed for general purpose amplifier and high speed switching applications. 1 „ TO-126 FEATURES * High voltage * Low collector saturation voltage.


    Original     		2SA1627A O-252 2SA1627A O-126 O-126C 2SA1627AL-x-T60-K 2SA1627AG-x-T60-K 2SA1627AL-x-T6C-K 2SA1627AG-x-T6C-K 2SA1627AL-x-TN3-R PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SA1627A PNP SILICON TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR  DESCRIPTION The UTC 2SA1627A is designed for general purpose amplifier and high speed switching applications.  FEATURES * High voltage * Low collector saturation voltage.


    Original     		2SA1627A 2SA1627A 2SA1627AG-x-AA3-R 2SA1627AL-x-TM3-T 2SA1627AG-x-TM3-T 2SA1627AL-x-TN3-R 2SA1627AG-x-TN3-R 2SA1627AL-x-T60-K 2SA1627AG-x-T60-K 2SA1627AL-x-T6C-K PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SA1627A PNP SILICON TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR  DESCRIPTION The UTC 2SA1627A is designed for general purpose amplifier and high speed switching applications.  FEATURES * High voltage * Low collector saturation voltage.


    Original     		2SA1627A 2SA1627A 2SA1627AL-x-AA3-R 2SA1627AG-x-AA3-R 2SA1627AL-x-TM3-T 2SA1627AG-x-TM3-T 2SA1627AL-x-TN3-R 2SA1627AG-x-TN3-R 2SA1627AL-x-T60-K 2SA1627AG-x-T60-K PDF

    RD1004

    Abstract: 2SC5707 2sK4096 ECH81 rd1004ls 2SK4101 tf252th SFT1443 vf10bm3 RD2006
    Text: ディスクリートデバイス 2010-7 環境にやさしい製品 超アナログ技術を極めるPower ＆RFデバイス Power 電 源 市 場 耐熱性 高アバランシェ 高耐圧・大電流 高効率 高ESD ・パワーマネジメント （LCDPDP、PC電源、照明）


    Original     		CDMA2000] 3-7300Fax OVA21 052-453-1331Fax 06-6353-3361Fax 03-5701-1111Fax 078-928-8010Fax 078-331-8400Fax 075-371-4058Fax 052-459-3501Fax RD1004 2SC5707 2sK4096 ECH81 rd1004ls 2SK4101 tf252th SFT1443 vf10bm3 RD2006 PDF

    2SA1627

    Abstract: pnp transistor 600V 2sa162
    Text: UTC 2SA1627 PNP EPITAXIAL SILICON TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR DESCRIPTION The UTC 2SA1627 is designed for general purpose amplifier and high speed switching applications. FEATURES *High voltage *Low collector saturation voltage. *High-speed switching


    Original     		2SA1627 2SA1627 O-126 QW-R204-010 pnp transistor 600V 2sa162 PDF

    2SA1627A

    Abstract: 600v pnp
    Text: UTC 2SA1627A PNP EPITAXIAL SILICON TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR DESCRIPTION The UTC 2SA1627A is designed for general purpose amplifier and high speed switching applications. FEATURES *High voltage *Low collector saturation voltage. 1 *High-speed switching


    Original     		2SA1627A 2SA1627A O-126C QW-R217-004 600v pnp PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONICTECHNOLOGIESCO., LTD 2SA1627A PNP SILICON TRANSISTOR PN P EPI T AX I AL SI LI CON T RAN SI ST OR 1 ̈ TO-252 DESCRI PT I ON The UTC 2SA1627A is designed for general purpose amplifier and high speed switching applications. 1 ̈ TO-126 FEAT U RES * High voltage


    Original     		2SA1627A O-252 2SA1627A O-126 O-126C 2SA1627AL-x-T60-K 2SA1627AG-x-T60-K 2SA1627AL-x-T6C-K 2SA1627AG-x-T6C-K 2SA1627AL-x-TN3-R PDF

    Diode 400V 5A

    Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
    Text: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM


    Original     		2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 Diode 400V 5A lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126C Plastic-Encapsulate Transistors 2SA1627 TRANSISTOR PNP TO – 126C FEATURES z High Voltage z High Speed Switching z Low Collector Saturation Voltage 1. EMITTER 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original     		O-126C 2SA1627 -600V PDF