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    60APH Search Results

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    60APH Price and Stock

    Vishay Semiconductors VS-60APH03-N3

    DIODE GEN PURP 300V 60A TO247AC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey VS-60APH03-N3 Tube 500 1
    • 1 $4.58
    • 10 $4.58
    • 100 $4.58
    • 1000 $2.0375
    • 10000 $2.0375
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    Vishay Semiconductors VS-60APH03L-N3

    DIODE GEN PURP 300V 60A TO247AD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey VS-60APH03L-N3 Tube 221 1
    • 1 $2.85
    • 10 $2.85
    • 100 $2.85
    • 1000 $1.1025
    • 10000 $1.1025
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    Vishay Semiconductors VS-60APH03-N-S1

    DIODE GEN PURP 300V 60A TO247AC
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    DigiKey VS-60APH03-N-S1 Tube
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    Vishay Intertechnologies VS-60APH03-N3

    Freds - TO-247 - Rail/Tube (Alt: VS-60APH03-N3)
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    Avnet Americas VS-60APH03-N3 Tube 10 Weeks 500
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    • 1000 $2.15975
    • 10000 $2.0375
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    Mouser Electronics VS-60APH03-N3 5,495
    • 1 $4.58
    • 10 $2.81
    • 100 $2.37
    • 1000 $2.33
    • 10000 $2.33
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    Newark VS-60APH03-N3 Bulk 500
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    • 1000 $2.33
    • 10000 $2.17
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    TTI VS-60APH03-N3 Tube 500
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    • 1000 $2.12
    • 10000 $2.04
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    TME VS-60APH03-N3 591 1
    • 1 $3.47
    • 10 $2.84
    • 100 $2.23
    • 1000 $1.66
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    EBV Elektronik VS-60APH03-N3 11 Weeks 25
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    Vishay Intertechnologies VS-60APH03L-N3

    Freds - TO-247 (Alt: VS-60APH03L-N3)
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    Avnet Americas VS-60APH03L-N3 10 Weeks 500
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    • 1000 $1.04429
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    Mouser Electronics VS-60APH03L-N3 1,574
    • 1 $2.85
    • 10 $1.71
    • 100 $1.42
    • 1000 $1.24
    • 10000 $1.1
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    Newark VS-60APH03L-N3 Bulk 23 1
    • 1 $2.96
    • 10 $2.52
    • 100 $2.06
    • 1000 $1.97
    • 10000 $1.97
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    TTI VS-60APH03L-N3 Tube 500
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    • 1000 $1.17
    • 10000 $1.1
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    TME VS-60APH03L-N3 1
    • 1 $3.2
    • 10 $2.88
    • 100 $2.29
    • 1000 $1.98
    • 10000 $1.92
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    EBV Elektronik VS-60APH03L-N3 325 11 Weeks 25
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    New Advantage Corporation VS-60APH03L-N3 250 1
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    • 100 $3.26
    • 1000 $3.02
    • 10000 $3.02
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    60APH Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    60aph03

    Abstract: VS-60APH03-N3 INL16 60aph 60APH03-N3
    Text: VS-60APH03-N3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 60 A FRED Pt FEATURES • Hyperfast recovery time • Low forward voltage drop Base cathode • Low leakage current • Soft recovery device • 175 °C operating junction temperature


    Original     		PDF VS-60APH03-N3 JEDEC-JESD47 O-247AC VS-60APH03-N3 O-247AC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 60aph03 INL16 60aph 60APH03-N3

    60aph03

    Abstract: No abstract text available
    Text: VS-60APH03-N3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 60 A FRED Pt FEATURES • Hyperfast recovery time • Low forward voltage drop Base cathode • Low leakage current • Soft recovery device • 175 °C operating junction temperature


    Original     		PDF VS-60APH03-N3 JEDEC-JESD47 O-247AC VS-60APH03-N3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 60aph03

    60aph03

    Abstract: No abstract text available
    Text: VS-60APH03-N3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 60 A FRED Pt FEATURES • Hyperfast recovery time • Low forward voltage drop Base cathode • Low leakage current • Soft recovery device • 175 °C operating junction temperature


    Original     		PDF VS-60APH03-N3 JEDEC-JESD47 O-247AC VS-60APH03-N3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 60aph03

    Untitled

    Abstract: No abstract text available
    Text: VS-FA40SA50LC www.vishay.com Vishay Semiconductors Power MOSFET, 40 A FEATURES • Fully isolated package • Easy to use and parallel • Low on-resistance • Dynamic dV/dt rating • Fully avalanche rated • Simple drive requirements • Low drain to case capacitance


    Original     		PDF VS-FA40SA50LC OT-227 E78996 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    94803

    Abstract: 60APH06
    Text: VS-FA40SA50LC www.vishay.com Vishay Semiconductors Power MOSFET, 40 A FEATURES • Fully isolated package • Easy to use and parallel • Low on-resistance • Dynamic dV/dt rating • Fully avalanche rated • Simple drive requirements SOT-227 • Low drain to case capacitance


    Original     		PDF VS-FA40SA50LC OT-227 OT-227 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 94803 60APH06

    60APH06

    Abstract: VS-GA250SA60S
    Text: VS-GA250SA60S www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Ultralow VCE on , 250 A FEATURES • Standard: Optimized for minimum saturation voltage and low speed up to 5 kHz • Lowest conduction losses available • Fully isolated package (2500 VAC)


    Original     		PDF VS-GA250SA60S OT-227 E78996 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 60APH06 VS-GA250SA60S

    Untitled

    Abstract: No abstract text available
    Text: VS-GP250SA60S www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Trench PT IGBT, 600 V, 250 A Proprietary Vishay IGBT Silicon “L Series” FEATURES • Standard speed Trench PT IGBT • Fully isolated package • Very low internal inductance  5 nH typical


    Original     		PDF VS-GP250SA60S E78996 OT-227 OT-227 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: VS-GB90DA60U www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Warp 2 Speed IGBT , 90 A FEATURES • NPT warp 2 speed IGBT technology with positive temperature coefficient • Square RBSOA • HEXFRED antiparallel diodes with ultrasoft


    Original     		PDF VS-GB90DA60U OT-227 E78996 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: VS-GT140DA60U www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Trench IGBT , 140 A FEATURES • Trench IGBT technology temperature coefficient with positive • Square RBSOA • 3 s short circuit capability • FRED Pt antiparallel diodes with ultrasoft reverse


    Original     		PDF VS-GT140DA60U OT-227 E78996 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: VS-GB90DA60U www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Warp 2 Speed IGBT , 90 A FEATURES • NPT warp 2 speed IGBT technology with positive temperature coefficient • Square RBSOA • HEXFRED antiparallel diodes with ultrasoft


    Original     		PDF VS-GB90DA60U OT-227 E78996 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    60aph

    Abstract: VS-FA72SA50LC
    Text: VS-FA72SA50LC www.vishay.com Vishay Semiconductors Power MOSFET, 72 A FEATURES SOT-227 PRODUCT SUMMARY • • • • • • • Fully isolated package Easy to use and parallel Low on-resistance Dynamic dV/dt rating Fully avalanche rated Simple drive requirements


    Original     		PDF VS-FA72SA50LC OT-227 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 60aph VS-FA72SA50LC

    Untitled

    Abstract: No abstract text available
    Text: VS-FA72SA50LC www.vishay.com Vishay Semiconductors Power MOSFET, 72 A FEATURES • • • • • • • SOT-227 Fully isolated package Easy to use and parallel Low on-resistance Dynamic dV/dt rating Fully avalanche rated Simple drive requirements Low gate charge device


    Original     		PDF VS-FA72SA50LC OT-227 E78996 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: VS-FA72SA50LC www.vishay.com Vishay Semiconductors Power MOSFET, 72 A FEATURES • • • • • • • SOT-227 Fully isolated package Easy to use and parallel Low on-resistance Dynamic dV/dt rating Fully avalanche rated Simple drive requirements Low gate charge device


    Original     		PDF VS-FA72SA50LC OT-227 E78996 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: VS-FA40SA50LC www.vishay.com Vishay Semiconductors Power MOSFET, 40 A FEATURES • Fully isolated package • Easy to use and parallel • Low on-resistance • Dynamic dV/dt rating • Fully avalanche rated • Simple drive requirements • Low drain to case capacitance


    Original     		PDF VS-FA40SA50LC OT-227 E78996 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: VS-GA250SA60S www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Ultralow VCE on , 250 A FEATURES • Standard: Optimized for minimum saturation voltage and low speed up to 5 kHz • Lowest conduction losses available • Fully isolated package (2500 VAC)


    Original     		PDF VS-GA250SA60S OT-227 E78996 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    A 3150 igbt driver

    Abstract: VS-GT140DA60U 60APH06
    Text: VS-GT140DA60U www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Trench IGBT , 140 A FEATURES • Trench IGBT technology temperature coefficient with positive • Square RBSOA • 3 s short circuit capability • FRED Pt antiparallel diodes with ultrasoft reverse


    Original     		PDF VS-GT140DA60U OT-227 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 A 3150 igbt driver VS-GT140DA60U 60APH06

    Untitled

    Abstract: No abstract text available
    Text: VS-GT140DA60U www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Trench IGBT , 140 A FEATURES • Trench IGBT technology temperature coefficient with positive • Square RBSOA • 3 s short circuit capability • FRED Pt antiparallel diodes with ultrasoft reverse


    Original     		PDF VS-GT140DA60U OT-227 E78996 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: VS-GB90DA60U www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Warp 2 Speed IGBT , 90 A FEATURES • NPT warp 2 speed IGBT technology with positive temperature coefficient • Square RBSOA • HEXFRED anti-parallel diodes with ultrasoft


    Original     		PDF VS-GB90DA60U OT-227 E78996 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12