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    60N02 Search Results

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    60N02 Price and Stock

    Micro Commercial Components MCU60N02-TP

    N-CHANNEL MOSFET, DPAK
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    DigiKey MCU60N02-TP Digi-Reel 1,997 1
    • 1 $0.92
    • 10 $0.573
    • 100 $0.92
    • 1000 $0.25818
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    MCU60N02-TP Cut Tape 1,997 1
    • 1 $0.92
    • 10 $0.573
    • 100 $0.92
    • 1000 $0.25818
    • 10000 $0.25818
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    MCU60N02-TP Reel 2,500
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    • 10000 $0.22802
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    Mouser Electronics MCU60N02-TP
    • 1 $0.76
    • 10 $0.556
    • 100 $0.373
    • 1000 $0.253
    • 10000 $0.182
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    onsemi NTD60N02R

    MOSFET N-CH 25V 8.5A/32A DPAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey NTD60N02R Tube 1,950
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    Bristol Electronics NTD60N02R 465
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    onsemi NTD60N02RG

    MOSFET N-CH 25V 8.5A/32A DPAK
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    DigiKey NTD60N02RG Tube
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    IXYS Corporation IXTP60N020T

    MOSFET N-CH TO220AB
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    DigiKey IXTP60N020T Bulk
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    Rochester Electronics LLC NTD60N02R-1G

    MOSFET N-CH 25V 8.5A/32A IPAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey NTD60N02R-1G Tube 2,664
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    60N02 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    60n02

    Abstract: 60N01 60N05 E0C6001 E0C6002 E0C6003 E0C6004 EVA6S32R lcd cable 30 pins connector 40 pins 20 PIN LCD MONITOR CABLE CONNECTION DIAGRAM
    Text: CMOS 4-BIT SINGLE CHIP MICROCOMPUTER S5U1C62N51E1 Manual Evaluation Board for S1C60N01/60N02/60N05/62N51/6S3N7 Rev.1.0 NOTICE No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice.


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    S5U1C62N51E1 S1C60N01/60N02/60N05/62N51/6S3N7) 60n02 60N01 60N05 E0C6001 E0C6002 E0C6003 E0C6004 EVA6S32R lcd cable 30 pins connector 40 pins 20 PIN LCD MONITOR CABLE CONNECTION DIAGRAM PDF

    T60 N02R

    Abstract: T60N02R MOSFEt t60 n02r 60n02r T 60 N02R n02r NTD60N02RG 60N02 NTD60N02RT4G NTD60N02R
    Text: 60N02R Power MOSFET 62 A, 24 V, N−Channel, DPAK Features • Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in


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    NTD60N02R NTD60N02RG NTD60N02RT4 NTD60N02RT4G NTD60N02R-1 NTD60N02R-1G BRD8011/D. T60 N02R T60N02R MOSFEt t60 n02r 60n02r T 60 N02R n02r 60N02 PDF

    T60N02R

    Abstract: No abstract text available
    Text: 60N02R Power MOSFET 60 Amps, 24 Volts N-Channel DPAK Features • • • • • http://onsemi.com Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in


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    NTD60N02R NTD60N02R/D T60N02R PDF

    60N02

    Abstract: t60 n02r NTD60N02RG N02R T60N02R 369D NTD60N02R NTD60N02RT4 NTD60N02RT4G T 60 N02R
    Text: 60N02R Power MOSFET 62 A, 24 V, N−Channel, DPAK Features • Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in


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    NTD60N02R NTD60N02R/D 60N02 t60 n02r NTD60N02RG N02R T60N02R 369D NTD60N02R NTD60N02RT4 NTD60N02RT4G T 60 N02R PDF

    T60 N02R

    Abstract: T60N02R MOSFEt t60 n02r T 60 N02R 60N02R 60N02 369D N02R NTD60N02R NTD60N02RT4
    Text: 60N02R Power MOSFET 60 Amps, 24 Volts N−Channel DPAK Features Drain−to−Source Voltage Symbol Value 8.0 mW @ 4.5 V 60 A 1 VGS ±20 Vdc Thermal Resistance − Junction−to−Case Total Power Dissipation @ TC = 25°C Drain Current Continuous @ TC = 25°C, Chip


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    NTD60N02R NTD60N02R/D T60 N02R T60N02R MOSFEt t60 n02r T 60 N02R 60N02R 60N02 369D N02R NTD60N02R NTD60N02RT4 PDF

    T60 N02R

    Abstract: T60N02R 60N02R 60N02 n02r
    Text: 60N02R Power MOSFET 60 Amps, 24 Volts N−Channel DPAK Features Drain−to−Source Voltage Symbol Value 8.4 mW @ 10 V 60 A 1 VGS ±20 Vdc Thermal Resistance − Junction−to−Case Total Power Dissipation @ TC = 25°C Drain Current Continuous @ TC = 25°C, Chip


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    NTD60N02R NTD60N02R/D T60 N02R T60N02R 60N02R 60N02 n02r PDF

    60n02

    Abstract: 60N01 E0C6001 E0C6002 E0C6003 E0C6004 PC-9800
    Text: MF844-04 CMOS 4-BIT SINGLE CHIP MICROCOMPUTER S5U1C6S3N7D Manual Development Software Tool for S1C6S3N7 NOTICE No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice. Seiko Epson does not assume any


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    MF844-04 E-08190 60n02 60N01 E0C6001 E0C6002 E0C6003 E0C6004 PC-9800 PDF

    Untitled

    Abstract: No abstract text available
    Text: 60N02R Power MOSFET 60 Amps, 24 Volts N-Channel DPAK Features • • • • • http://onsemi.com Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in


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    NTD60N02R r14525 NTD60N02R/D PDF

    n02r

    Abstract: T60 N02R dpak DIODE 948 T60N02R 60N02R 60N02 ntd60n02rg 100 amp mosfet NTD60N02R T 948
    Text: 60N02R Power MOSFET 62 Amps, 24 Volts N−Channel DPAK Features • • • • • • Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in


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    NTD60N02R NTD60N02R/D n02r T60 N02R dpak DIODE 948 T60N02R 60N02R 60N02 ntd60n02rg 100 amp mosfet NTD60N02R T 948 PDF

    60n02

    Abstract: 60n05 transistor 60n02 60N01 E0C6001 E0C6002 PC-9800 S1C60N01
    Text: MF944-04 CMOS 4-BIT SINGLE CHIP MICROCOMPUTER S5U1C60N01D Manual Development Software Tool for S1C60N01 NOTICE No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice. Seiko Epson does not assume any


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    MF944-04 S5U1C60N01D S1C60N01) E-08190 60n02 60n05 transistor 60n02 60N01 E0C6001 E0C6002 PC-9800 S1C60N01 PDF

    60L02

    Abstract: 60n02 OPT0103 60N01 E0C6001 E0C6002 PC-9800 S1C60N02
    Text: MF973-04 CMOS 4-BIT SINGLE CHIP MICROCOMPUTER 60N02D Manual Development Software Tool for 60N02 NOTICE No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice. Seiko Epson does not assume any


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    MF973-04 S5U1C60N02D S1C60N02) E-08190 60L02 60n02 OPT0103 60N01 E0C6001 E0C6002 PC-9800 S1C60N02 PDF

    60N02

    Abstract: t60 n02r T60N02R T 60 N02R 369D N02R NTD60N02R NTD60N02RG NTD60N02RT4 NTD60N02RT4G
    Text: 60N02R Power MOSFET 62 A, 25 V, N−Channel, DPAK Features • Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in


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    NTD60N02R NTD60N02R/D 60N02 t60 n02r T60N02R T 60 N02R 369D N02R NTD60N02R NTD60N02RG NTD60N02RT4 NTD60N02RT4G PDF

    NTD60N02R

    Abstract: NTD60N02RG T60 N02R NTD60N02RT4G 369D N02R NTD60N02RT4 T 60 N02R
    Text: 60N02R Power MOSFET 62 A, 24 V, N−Channel, DPAK Features • Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in


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    NTD60N02R NTD60N02R/D NTD60N02R NTD60N02RG T60 N02R NTD60N02RT4G 369D N02R NTD60N02RT4 T 60 N02R PDF

    60N02

    Abstract: 60N02R n02r 369A-13 NTD60N02R NTD60N02R1 NTD60N02RT4
    Text: 60N02R Power MOSFET 60 Amps, 24 Volts N-Channel DPAK Features • • • • • http://onsemi.com Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in


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    NTD60N02R NTD60N02R/D 60N02 60N02R n02r 369A-13 NTD60N02R NTD60N02R1 NTD60N02RT4 PDF

    t60n02r

    Abstract: T60 N02R 60N02R T 60 N02R 60N02
    Text: 60N02R Power MOSFET 60 Amps, 24 Volts N−Channel DPAK Features • • • • • http://onsemi.com Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in


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    NTD60N02R NTD60N02R/D t60n02r T60 N02R 60N02R T 60 N02R 60N02 PDF

    diode C531

    Abstract: c531 diode lga775 schematic transistor C535 60N02R C536 VCC3 1156 01 85n02 C532 diode u504
    Text: NCP5318DEMO NCP5318 Four Phase Demonstration Board Note Switching Regulator Controller http://onsemi.com DEMONSTRATION NOTE Features Protection Features • Programmable 2/3/4 Phase Operation • Lossless Current Sensing • Enhanced V2 Control Method Provides Fast Transient


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    NCP5318DEMO NCP5318 NCP5318DEMO/D diode C531 c531 diode lga775 schematic transistor C535 60N02R C536 VCC3 1156 01 85n02 C532 diode u504 PDF