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    60N12 Search Results

    60N12 Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    TW060N120C Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET, 1200 V, 36 A, 0.078 Ω@18 V, TO-247 Visit Toshiba Electronic Devices & Storage Corporation
    SF Impression Pixel

    60N12 Price and Stock

    Infineon Technologies AG 1EDI60N12AFXUMA1

    DIGITAL ISO 1CH GATE DVR DSO8-51
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    DigiKey 1EDI60N12AFXUMA1 Digi-Reel 4,214 1
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    1EDI60N12AFXUMA1 Cut Tape 4,214 1
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    1EDI60N12AFXUMA1 Reel 2,500 2,500
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    Mouser Electronics 1EDI60N12AFXUMA1 50,762
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    Newark 1EDI60N12AFXUMA1 Cut Tape 1
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    RS 1EDI60N12AFXUMA1 Bulk 100 2 Weeks 1
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    Chip One Stop 1EDI60N12AFXUMA1 Cut Tape 7,727
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    1EDI60N12AFXUMA1 Cut Tape 1,125
    • 1 $1.44
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    Chip-Germany GmbH 1EDI60N12AFXUMA1 3
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    EBV Elektronik 1EDI60N12AFXUMA1 21 Weeks 2,500
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    Win Source Electronics 1EDI60N12AFXUMA1 32,460
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    onsemi NVBG160N120SC1

    SICFET N-CH 1200V 19.5A D2PAK
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    DigiKey NVBG160N120SC1 Digi-Reel 2,561 1
    • 1 $12.17
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    NVBG160N120SC1 Cut Tape 2,561 1
    • 1 $12.17
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    Mouser Electronics NVBG160N120SC1 1,382
    • 1 $11.43
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    Onlinecomponents.com NVBG160N120SC1
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    Richardson RFPD NVBG160N120SC1 800
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    Avnet Asia NVBG160N120SC1 32 18 Weeks 800
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    EBV Elektronik NVBG160N120SC1 20 Weeks 800
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    Flip Electronics NVBG160N120SC1 150,400
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    New Advantage Corporation NVBG160N120SC1 59,224 1
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    Wuhan P&S NVBG160N120SC1 2,616 1
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    onsemi NTH4L160N120SC1

    SICFET N-CH 1200V 17.3A TO247
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    DigiKey NTH4L160N120SC1 Tube 1,208 1
    • 1 $8.38
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    Avnet Americas NTH4L160N120SC1 Tube 0 Weeks, 2 Days 120
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    NTH4L160N120SC1 Bulk 9 Weeks, 3 Days 1
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    NTH4L160N120SC1 Tube 17 Weeks 450
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    Mouser Electronics NTH4L160N120SC1 919
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    Onlinecomponents.com NTH4L160N120SC1
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    Rochester Electronics NTH4L160N120SC1 66 1
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    TME NTH4L160N120SC1 1
    • 1 $11.59
    • 10 $9.23
    • 100 $8.62
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    Richardson RFPD NTH4L160N120SC1 450
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    Avnet Asia NTH4L160N120SC1 1,890 17 Weeks 450
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    Avnet Silica NTH4L160N120SC1 18 Weeks 30
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    EBV Elektronik NTH4L160N120SC1 1,800 19 Weeks 30
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    Flip Electronics NTH4L160N120SC1 528
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    New Advantage Corporation NTH4L160N120SC1 56 1
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    • 100 $5.44
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    onsemi NTBG160N120SC1

    SICFET N-CH 1200V 19.5A D2PAK
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    DigiKey NTBG160N120SC1 Digi-Reel 820 1
    • 1 $9.35
    • 10 $6.413
    • 100 $9.35
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    NTBG160N120SC1 Cut Tape 820 1
    • 1 $9.35
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    NTBG160N120SC1 Reel 800 800
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    Mouser Electronics NTBG160N120SC1 1,840
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    Newark NTBG160N120SC1 Bulk 765 800
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    Rochester Electronics NTBG160N120SC1 4,560 1
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    Avnet Silica NTBG160N120SC1 18 Weeks 800
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    EBV Elektronik NTBG160N120SC1 1,600 19 Weeks 800
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    New Advantage Corporation NTBG160N120SC1 1,600 1
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    Wuhan P&S NTBG160N120SC1 3,245 1
    • 1 $11.76
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    • 100 $7.51
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    STMicroelectronics SCTWA60N120G2-4

    SILICON CARBIDE POWER MOSFET 120
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    DigiKey SCTWA60N120G2-4 Tube 526 1
    • 1 $20.41
    • 10 $16.296
    • 100 $20.41
    • 1000 $13.27088
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    Avnet Americas SCTWA60N120G2-4 Tube 32 Weeks 600
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    Mouser Electronics SCTWA60N120G2-4 426
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    TME SCTWA60N120G2-4 1
    • 1 $39.29
    • 10 $32.83
    • 100 $29.44
    • 1000 $25.54
    • 10000 $24.72
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    Avnet Silica SCTWA60N120G2-4 17 Weeks 30
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    EBV Elektronik SCTWA60N120G2-4 90 33 Weeks 30
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    Find more 60N12 price and stock on Findchips.com

    60N12 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    60N120

    Abstract: D-68623 IXER60N120 V9560
    Text: IXER 60N120 NPT3 IGBT IC25 = 95 A = 1200 V VCES VCE sat typ. = 2.1 V in ISOPLUS 247TM ISOPLUS 247TM E153432 C G G C E Isolated Backside* E G = Gate C = Collector E = Emitter *Patent pending Features IGBT Symbol Conditions VCES TVJ = 25°C to 150°C Maximum Ratings


    Original     		60N120 247TM E153432 IXER60N120 60N120 D-68623 IXER60N120 V9560 PDF

    IXEN60N120

    Abstract: 60N120 IXEN 60N120 IXEN 60N120D1 m4 diode 60n120d1 D-68623 diode 331 IXEN 60N120D1
    Text: IXEN 60N120 IXEN 60N120D1 NPT3 IGBT IC25 = 100 A = 1200 V VCES VCE sat typ. = 2.1 V in miniBLOC package C C G miniBLOC, SOT-227 B E153432 G E G E E IXEN 60N120 IXEN 60N120D1 C = Collector G = Gate E = Emitter * E C * Either Emitter terminal can be used as Main or Kelvin Emitter


    Original     		60N120 60N120D1 OT-227 E153432 IXEN60N120 IXEN60N120 60N120 IXEN 60N120 IXEN 60N120D1 m4 diode 60n120d1 D-68623 diode 331 IXEN 60N120D1 PDF

    60N120

    Abstract: No abstract text available
    Text: Advanced Technical Information IXEN 60N120 IC25 NPT3-IGBT VCES VCE sat typ. in miniBLOC package = 100 A = 1200 V = 2.1 V miniBLOC, SOT-227 B E153432 E G E E C = Collector G = Gate C E = Emitter * * Either Emitter terminal can be used as Main or Kelvin Emitter


    Original     		60N120 OT-227 E153432 PDF

    60N120

    Abstract: 60N120D1
    Text: NPT3 IGBT IC25 IXEN 60N120 IXEN 60N120D1 VCES in miniBLOC package VCE sat typ. C Preliminary data sheet C G = 100 A = 1200 V = 2.1 V miniBLOC, SOT-227 B E153432 G E G E E IXEN 60N120 IXEN 60N120D1 C = Collector G = Gate E = Emitter * E C * Either Emitter terminal can be used as Main or Kelvin Emitter


    Original     		60N120 60N120D1 OT-227 E153432 60N120 60N120D1 coeffic22 PDF

    60N120

    Abstract: IXER60N120 80E10 igbt for induction heating ic IXER 60N120 20600t
    Text: IXER 60N120 NPT3 IGBT IC25 = 95 A = 1200 V VCES VCE sat typ. = 2.1 V in ISOPLUS 247TM ISOPLUS 247TM E153432 C G G C E Isolated Backside E G = Gate t Conditions Maximum Ratings VCES TVJ = 25°C to 150°C u Symbol TC = 25°C TC = 90°C ICM VCEK VGE = ±15 V; RG = 22 Ω; TVJ = 125°C


    Original     		60N120 247TM E153432 IXER60N120 60N120 IXER60N120 80E10 igbt for induction heating ic IXER 60N120 20600t PDF

    Untitled

    Abstract: No abstract text available
    Text: IXER 60N120 NPT3 IGBT IC25 = 95 A VCES = 1200 V VCE sat typ. = 2.1 V in ISOPLUS 247TM ISOPLUS 247TM E153432 C G G C E Isolated Backside E G = Gate Maximum Ratings VCES TVJ = 25°C to 150°C 1200 ± 20 TC = 25°C TC = 90°C ICM VCEK VGE = ±15 V; RG = 22 Ω; TVJ = 125°C


    Original     		60N120 247TM E153432 IXER60N120 PDF

    60N120

    Abstract: 60N120D1 IXEN 60N120 IXEN 60N120D1 induction heating technical information D-68623
    Text: Advanced Technical Information NPT3 IGBT IC25 IXEN 60N120 IXEN 60N120D1 VCES in miniBLOC package VCE sat typ. C C G = 100 A = 1200 V = 2.1 V miniBLOC, SOT-227 B E153432 G E G E E IXEN 60N120 IXEN 60N120D1 C = Collector G = Gate E = Emitter * E C * Either Emitter terminal can be used as Main or Kelvin Emitter


    Original     		60N120 60N120D1 OT-227 E153432 60N120D1 60N120 IXEN 60N120 IXEN 60N120D1 induction heating technical information D-68623 PDF

    Untitled

    Abstract: No abstract text available
    Text: IXEN 60N120 IXEN 60N120D1 NPT3 IGBT IC25 = 100 A VCES = 1200 V VCE sat typ. = 2.1 V in miniBLOC package C C G miniBLOC, SOT-227 B E153432 G E G E E IXEN 60N120 C = Collector G = Gate E = Emitter * IXEN 60N120D1 E C * Either Emitter terminal can be used as Main or Kelvin Emitter


    Original     		60N120 60N120D1 OT-227 E153432 IXEN60N120 PDF

    60N120

    Abstract: induction heat resonant D-68623 V9560 60n12
    Text: Advanced Technical Information IXER 60N120 IC25 NPT3 IGBT VCES VCE sat typ. in ISOPLUS 247TM = 95 A = 1200 V = 2.1 V ISOPLUS 247TM E153432 C G G C E Isolated Backside* E G = Gate C = Collector E = Emitter *Patent pending Features IGBT Symbol Conditions VCES


    Original     		60N120 247TM E153432 induction heat resonant D-68623 V9560 60n12 PDF

    60N120

    Abstract: IXEN 60N120 IXEN 60N120D1 D-68623 IXEN60N120 60N120D1
    Text: IXEN 60N120 IXEN 60N120D1 NPT3 IGBT IC25 = 100 A = 1200 V VCES VCE sat typ. = 2.1 V in miniBLOC package C C G miniBLOC, SOT-227 B E153432 G E G E E IXEN 60N120 C = Collector G = Gate E = Emitter * IXEN 60N120D1 E C * Either Emitter terminal can be used as Main or Kelvin Emitter


    Original     		60N120 60N120D1 OT-227 E153432 IXEN60N120 60N120 IXEN 60N120 IXEN 60N120D1 D-68623 IXEN60N120 60N120D1 PDF

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 PDF

    30N120D1

    Abstract: 55N120D1 35N60BD1 30n120d 35N60B transistor c90 40N120D1 20N120D1 60N120 20N60BD1
    Text: Discrete N P TIGBT A A 3 NPT IGBT , FID H0 F" NPT IGBT = non-punch through insulated gate bipolar transistor square RBSOA, short circuit rated p V V Type IXDP IXDP IXDP IXDH IXDH >- IXDR 20N60B 20N60BD1 35N60B 35N60B 35N60BD1 35N60BD1 600 IXDA 20N120AS IXDH 20N120


    OCR Scan     		O-268 35-06C 40-06D OT-227B 50-12E 50-12BD 30N120D1 55N120D1 35N60BD1 30n120d 35N60B transistor c90 40N120D1 20N120D1 60N120 20N60BD1 PDF

    Untitled

    Abstract: No abstract text available
    Text: E U P EC L IE J> m CI0 G1 0 7 A 0 2 1 H IUPEC T T 61 N, TD 61 N, DT61 N Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum rated values 600, 800 1000, 1200 1400, 1600 V V V + 100 V di/dt cr 120 60 76 1550 1400 12000 9800 150 A


    OCR Scan     		PDF