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    60N60 IGBT Search Results

    60N60 IGBT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    60N60 IGBT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ic 307 ex

    Abstract: 60N60 97521E
    Text: Ultra-Low VCE sat IGBT IXGN 60N60 VCES = 600 V IC25 = 100 A VCE(sat) = 1.7 V Preliminary data sheet E Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient


    Original     		PDF 60N60 OT-227B OT-227 ic 307 ex 60N60 97521E

    Untitled

    Abstract: No abstract text available
    Text: Ultra-Low VCE sat IGBT IXGN 60N60 VCES = 600 V IC25 = 100 A VCE(sat) = 1.7 V Preliminary data sheet E Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient


    Original     		PDF 60N60 OT-227B

    60N60

    Abstract: 60n60 igbt 60n6 v5ac
    Text: Ultra-Low VCE sat IGBT IXGH 60N60 VCES IC25 VCE(sat) Maximum Ratings TO-247 AD Symbol Test Conditions VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 T C = 25°C, limited by leads


    Original     		PDF 60N60 O-247 60N60 60n60 igbt 60n6 v5ac

    60n60 igbt

    Abstract: ic 307 ex 60N60
    Text: Ultra-Low VCE sat IGBT IXGN 60N60 VCES = 600 V IC25 = 100 A VCE(sat) = 1.7 V Preliminary data sheet E Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient


    Original     		PDF 60N60 OT-227B 60n60 igbt ic 307 ex 60N60

    MOSFET 60n60

    Abstract: 60N60 transistor 60N60 TAB 429 H
    Text: HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 60N60 VDSS ID25 RDS on = 600 V = 60 A = 75 mW D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G Preliminary data S S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR


    Original     		PDF 60N60 OT-227 E153432 MOSFET 60n60 transistor 60N60 TAB 429 H

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 60N60 VDSS ID25 RDS on = 600 V = 60 A = 75 mW D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G Preliminary data S S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR


    Original     		PDF 60N60 OT-227 E153432

    MOSFET 60n60

    Abstract: IXFN SOT227
    Text: HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 60N60 VDSS ID25 RDS on = 600 V = 60 A = 75 mW D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G Preliminary data S Symbol Test Conditions S Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR


    Original     		PDF 60N60 OT-227 E153432 MOSFET 60n60 IXFN SOT227

    ixfn60n60

    Abstract: No abstract text available
    Text: Advanced Technical Information IXFN 60N60 HiPerFETTM Power MOSFETs Single Die MOSFET RDS on G S S Symbol Test Conditions VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 600 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC= 25°C, Chip capability


    Original     		PDF 60N60 OT-227 ixfn60n60

    MOSFET 60n60

    Abstract: 60N60 IXFL60N60 Z 728
    Text: HiPerFETTM Power MOSFETs IXFL 60N60 VDSS ISOPLUS264TM = 600 V = 60 A Ω = 80 mΩ ID25 Electrically Isolated Backside RDS(on) Single Die MOSFET Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF 60N60 ISOPLUS264TM 728B1 123B1 728B1 065B1 MOSFET 60n60 IXFL60N60 Z 728

    60N60

    Abstract: ixfh 60N60 60n60 igbt IXGH60N60
    Text: Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C, limited by leads 75 A IC90 TC = 90°C 60 A ICM TC = 25°C, 1 ms 200 A SSOA RBSOA VGE = 15 V, TVJ = 125°C, RG = 10 W


    Original     		PDF 60N60 O-247 O-264 O-268 60N60 ixfh 60N60 60n60 igbt IXGH60N60

    12n60c

    Abstract: 60n60 igbt 20N30 diode b242 31N60 ixgk50n60bu1 50n60bd1 Diode 12 b2 120n60 60N60
    Text: HiPerFASTTM IGBT G-Series Contents IGBT VCES V 300 Low VCE sat 600 1000 TO-220 IC VCE(sat) (IXGP) TC = max 25 °C TC=25 °C A V PLUS247 (IXGX) 1.6 1.8 60 1.6 1.8 IXGH 30N30 IXGH 40N30 40 1.7 IXGH 31N60 75 ¬ 1.6 75 ¬ 1.6 ä ä ä IXGH 20N30 IXGH 28N30 TO-268 ISOPLUS247TM


    Original     		PDF O-220 O-263 O-247 PLUS247 O-268 ISOPLUS247TM O-264 20N30 28N30 30N30 12n60c 60n60 igbt diode b242 31N60 ixgk50n60bu1 50n60bd1 Diode 12 b2 120n60 60N60

    60N60

    Abstract: 60n60 igbt transistor 60N60 60n60 ixgh ixfh 60N60
    Text: Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C, limited by leads 75 A IC90 TC = 90°C 60 A ICM TC = 25°C, 1 ms 200 A SSOA RBSOA VGE = 15 V, TVJ = 125°C, RG = 10 W


    Original     		PDF 60N60 O-247 O-268 O-264 60N60 60n60 igbt transistor 60N60 60n60 ixgh ixfh 60N60

    60N60

    Abstract: 60n60 igbt ixfh 60N60 IXGH60N60 TO-264 Jedec package outline
    Text: Symbol Test Conditions VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C, limited by leads 75 A IC90 TC = 90°C 60 A ICM TC = 25°C, 1 ms 200 A SSOA RBSOA VGE= 15 V, TVJ = 125°C, RG = 10 W


    Original     		PDF 60N60 60N60 O-247 O-268 O-264 60n60 igbt ixfh 60N60 IXGH60N60 TO-264 Jedec package outline

    60N60

    Abstract: No abstract text available
    Text: IXGH 60N60 IXGK 60N60 IXGT 60N60 Ultra-Low VCE sat IGBT VCES ^C25 V C E(sat) V A V 600 75 1.6 Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES T j = 2 5 °C to 150°C 600 V Vcon T,J = 2 5 ° C to 15 0 °C; R„_ be = 1 MO 600 V v GES Continuous


    OCR Scan     		PDF 60N60 60N60 O-247 O-268 O-264 1999IXYS

    Untitled

    Abstract: No abstract text available
    Text: Ultra-Low VCE sat IGBT VCES IXGN 60N60 ^C25 VCE(sat) 600 V 100 A 1.6 V Preliminary data sheet Symbol Test Conditions Maximum Ratings VcES T j =2 5°C to 15 0 cC 600 V v CGR T,J = 25°C to 150°C; R(jfc = 1 MO 600 V VGES Continuous ±20 V VGEM Transient +30


    OCR Scan     		PDF 60N60 OT-227B OT-227B

    Untitled

    Abstract: No abstract text available
    Text: □ IXYS Ultra-Low VCE sat „, „ IGBT ix g n V CES 60N60 ^C25 V CE(sat) 600 V 100 A 1.6 V Preliminary data sheet Maximum Ratings Symbol Test Conditions VCES Td = 25°C to 150°C 600 V VCGR Td = 25°C to 150°C; RGE = 1 M£i 600 V v GES Continuous ±20


    OCR Scan     		PDF 60N60 OT-227BminiBLOC

    Untitled

    Abstract: No abstract text available
    Text: □ IXYS Advanced Technical Information IXFN 60N60 HiPerFET Power MOSFETs Single Die M OSFET VDSS ^D25 D DS on = 600 V = 60 A = 75 mQ N-Channel Enhancement Mode Avalanche Rated, Highdv/dt, Lowtrr s Maximum Ratings Symbol Test C onditions V DSS Td = 25°C to 150°C


    OCR Scan     		PDF 60N60

    1xys

    Abstract: 90a944
    Text: Ultra-Low VCE sat IGBT IXGN 60N60 VCES ^C25 VCE(sat) Symbol Test Conditions V CES TJ = 25°C to 150°C 600 V v CGR Tj = 25°C to 150°C; RGE = 1 MU 600 V V GES Continuous ±20 V v GEM Transient +30 V ^C25 Tc = 25°C 100 A ^C90 Tc = 90°C 60 A •cm Tc 200


    OCR Scan     		PDF 60N60 OT-227 1xys 90a944

    ixgn60n60

    Abstract: No abstract text available
    Text: H Î Y Y ^JLsIk»!? flHVw AUltra-Low VCE sat IGBT ixgn vCES 60N60 ^C25 VCE(sat) 600 V 100 A 1.6 V Preliminary data sheet Maximum Ratings Symbol Test Conditions V CES Td = 25°C to 150°C 600 V V CGR Td = 25°C to 150°C; RGE = 1 MQ 600 V v GES Continuous


    OCR Scan     		PDF 60N60 OT-227BminiBLOC ixgn60n60

    60N60

    Abstract: G 60N60
    Text: ID1XYS Ultra-Low VCE sat IGBT IXGH 60N60 v v CES ^C25 Symbol Test Conditions Maximum Ratings v*C E S v CGR Tj = 25°C to 150°C 600 V ^ = 25DC to 150°C; RGE = 1 M£2 600 V v GES v GEM Continuous ±20 V Transient ±30 V ^C25 Tc = 25°C, limited by leads 75


    OCR Scan     		PDF 60N60 O-247 60N60 G 60N60

    ge motor 752

    Abstract: 60N60 IXGH60N60 60n60 igbt
    Text: H Î Y Y ^JL sIk»!? flH V w A Ultra-Low VCE sat IGBT IXGH/IXGK/IXGT 60N60 V CES I 600 V 75 A 1.6 V C25 V CE(sat) Preliminary data sheet Maximum Ratings Symbol Test Conditions V CES T d = 25°C to 150°C 600 V V CGR T d = 25°C to 150°C; RGE = 1 MQ 600 V


    OCR Scan     		PDF 60N60 O-247 O-264 O-268 60N60 ge motor 752 IXGH60N60 60n60 igbt

    3580J

    Abstract: No abstract text available
    Text: Ultra-Low VCE sat IGBT ixg n 60N60 VCES ^C 25 VCE(sat) u Ë oE Test Conditions V «s T, = 25”C to 150°C 600 VcOR ^ 600 V v GES v GEM Continuous ±20 V Transient ±30 V 'c 2 5 Tc =25«C 100 A Tc = 90°C 60 A 200 A l CM = 1 0 0 e 0.8 v CES A 'c 9 0 Maximum Ratings


    OCR Scan     		PDF 60N60 OT-227B, IXGN6QN60 3580J

    7N60B

    Abstract: 65A3 40N60A 60N60 IXGA 12N60C 200n60 ixgh 1500 30N30 IXG IGBT ixgh
    Text: Insulated Gate Bipolar Transistors IGBT G series (high gain, high speed) v CE{Mt) Type T „ = 25°C A = 150°C New t jm > > IXGH 28N30 > 56 60 60_ IXGH 30N30 > IXGH 4QN30 > IXGH 31N60 IXGH IXGH IXGH > IXGN IXGN > IX G A 12N100 IXGH 12N100 IXGP 12N100 28


    OCR Scan     		PDF 30N30 28N30 4QN30 31N60 38N60 41N60 60N60 200N60 25N100A 7N60B 65A3 40N60A IXGA 12N60C 200n60 ixgh 1500 IXG IGBT ixgh

    120n60b

    Abstract: 40N30BD1 32N50 7n60c 20N60BU1 40N60A B-2160 200n60 12n60c IXGH24N50B
    Text: Contents IGBT V CE sat 1 TO-220 TO-263 ! TO-247 (IXGP) (IXGA) ! (IXGH) max Tc=25 °C PLUS247 (IXGX) TO-268 (IXGT) TO-264 (IXGK) miniBLOC {IXGN) Page V 300 600 40 56 ► i* G H ¿',N 30 >• IXGH 28N30 60 IXGH 30N30 IXGH 40N30 40 1.7 IXGH 3 ÍN S 0 76 * 75 *


    OCR Scan     		PDF O-220 O-263 O-247 28N30 30N30 40N30 2N100 8N100 6N100 12N10Q 120n60b 40N30BD1 32N50 7n60c 20N60BU1 40N60A B-2160 200n60 12n60c IXGH24N50B