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    Novacap 0402BW224K160NGT

    CAP CER 0.22UF 16V X5R 0402
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    Rochester Electronics LLC NTP5860NG

    SINGLE N-CHANNEL POWER MOSFET 60
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    Novacap 0603BB105K160NGT

    CAP CER 1UF 16V X7R 0603
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    TAIYO YUDEN LSMCG321611T160NG

    FERRITE BEAD 16 OHM 1206 1LN
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    Flip Electronics NTP5860NG

    POWER MOSFET 60V 169A 3.0 MOHM S
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    60NG Datasheets Context Search

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    60NG

    Abstract: 4860ng 4860N NTD4860N Power MOSFET 369D NTD4860N
    Text: NTD4860N Power MOSFET 25 V, 65 A, Single N-Channel, DPAK/IPAK Features Trench Technology Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices http://onsemi.com


    Original     		PDF NTD4860N NTD4860N/D 60NG 4860ng 4860N NTD4860N Power MOSFET 369D NTD4860N

    4860ng

    Abstract: 60NG 369D NTD4860N
    Text: NTD4860N Power MOSFET 25 V, 65 A, Single N-Channel, DPAK/IPAK Features •ăTrench Technology •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThese are Pb-Free Devices


    Original     		PDF NTD4860N NTD4860N/D 4860ng 60NG 369D NTD4860N

    60NG

    Abstract: 4960ng NTD4960NT4G 4960N 369D 051BSC
    Text: NTD4960N Power MOSFET 30 V, 55 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Three Package Variations for Design Flexibility


    Original     		PDF NTD4960N NTD4960N/D 60NG 4960ng NTD4960NT4G 4960N 369D 051BSC

    Untitled

    Abstract: No abstract text available
    Text: NTD4960N Product Preview Power MOSFET 30 V, 55 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Three Package Variations for Design Flexibility


    Original     		PDF NTD4960N NTD4960N/D

    60NG

    Abstract: No abstract text available
    Text: NTD4960N Power MOSFET 30 V, 55 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Three Package Variations for Design Flexibility


    Original     		PDF NTD4960N NTD4960N/D 60NG

    60NG

    Abstract: No abstract text available
    Text: NTD4860N Power MOSFET 25 V, 65 A, Single N−Channel, DPAK/IPAK Features • • • • • Trench Technology Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices


    Original     		PDF NTD4860N NTD4860N/D 60NG

    ntd4860n-1g

    Abstract: No abstract text available
    Text: NTD4860N Power MOSFET 25 V, 65 A, Single N-Channel, DPAK/IPAK Features Trench Technology Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices http://onsemi.com


    Original     		PDF NTD4860N NTD4860N/D ntd4860n-1g

    4960ng

    Abstract: 60NG
    Text: NTD4960N Power MOSFET 30 V, 55 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Three Package Variations for Design Flexibility


    Original     		PDF NTD4960N NTD4960N/D 4960ng 60NG