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    Novacap 0402BW474K160NGT

    CAP CER 0.47UF 16V X5R 0402
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    Novacap 0402BB104K160NGT

    CAP CER 0.1UF 16V X7R 0402
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    Novacap 0402BW224K160NGT

    CAP CER 0.22UF 16V X5R 0402
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    Novacap 0603BB105K160NGT

    CAP CER 1UF 16V X7R 0603
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    CAP CER 2.2UF 16V X5R 0603
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    60NG Datasheets Context Search

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    60NG

    Abstract: 4860ng 4860N NTD4860N Power MOSFET 369D NTD4860N
    Text: NTD4860N Power MOSFET 25 V, 65 A, Single N-Channel, DPAK/IPAK Features Trench Technology Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices http://onsemi.com


    Original     		NTD4860N NTD4860N/D 60NG 4860ng 4860N NTD4860N Power MOSFET 369D NTD4860N PDF

    4860ng

    Abstract: 60NG 369D NTD4860N
    Text: NTD4860N Power MOSFET 25 V, 65 A, Single N-Channel, DPAK/IPAK Features •ăTrench Technology •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThese are Pb-Free Devices


    Original     		NTD4860N NTD4860N/D 4860ng 60NG 369D NTD4860N PDF

    60NG

    Abstract: 4960ng NTD4960NT4G 4960N 369D 051BSC
    Text: NTD4960N Power MOSFET 30 V, 55 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Three Package Variations for Design Flexibility


    Original     		NTD4960N NTD4960N/D 60NG 4960ng NTD4960NT4G 4960N 369D 051BSC PDF

    Untitled

    Abstract: No abstract text available
    Text: NTD4960N Product Preview Power MOSFET 30 V, 55 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Three Package Variations for Design Flexibility


    Original     		NTD4960N NTD4960N/D PDF

    60NG

    Abstract: No abstract text available
    Text: NTD4960N Power MOSFET 30 V, 55 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Three Package Variations for Design Flexibility


    Original     		NTD4960N NTD4960N/D 60NG PDF

    60NG

    Abstract: No abstract text available
    Text: NTD4860N Power MOSFET 25 V, 65 A, Single N−Channel, DPAK/IPAK Features • • • • • Trench Technology Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices


    Original     		NTD4860N NTD4860N/D 60NG PDF

    ntd4860n-1g

    Abstract: No abstract text available
    Text: NTD4860N Power MOSFET 25 V, 65 A, Single N-Channel, DPAK/IPAK Features Trench Technology Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices http://onsemi.com


    Original     		NTD4860N NTD4860N/D ntd4860n-1g PDF

    4960ng

    Abstract: 60NG
    Text: NTD4960N Power MOSFET 30 V, 55 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Three Package Variations for Design Flexibility


    Original     		NTD4960N NTD4960N/D 4960ng 60NG PDF