72261LA
Abstract: 72271LA IDT72261LA IDT72271LA 72261LA15
Text: CMOS SUPERSYNC FIFO 16,384 x 9 32,768 x 9 PRELIMINARY IDT72261LA IDT72271LA Integrated Device Technology, Inc. FEATURES: • Choose among the following memory organizations: IDT72261LA 16,384 x 9 IDT72271LA 32,768 x 9 • Pin-compatible with the IDT72281/72291 SuperSync FIFOs
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Original
|
IDT72261LA
IDT72271LA
IDT72281/72291
72261LA
72271LA
IDT72261LA
IDT72271LA
72261LA15
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PRELIMINARY‡ 256Mb MULTIBANK BURST FLASH 32Mb/64Mb BURST CellularRAM COMBO FLASH AND CellularRAM COMBO MEMORY MT28C256532W18T MT28C256564W18T Low Voltage, Wireless Temperature Features Figure 1: 88-Ball FBGA Stacked die Combo package • Includes two 128Mb Flash devices
|
Original
|
256Mb
32Mb/64Mb
128Mb
09005aef80c7d5a5
MT28C256564W18T
|
PDF
|
88-ball
Abstract: No abstract text available
Text: PRELIMINARY‡ 256Mb MULTIBANK BURST FLASH 32Mb/64Mb BURST CellularRAM COMBO FLASH AND CellularRAM COMBO MEMORY MT28C256532W18T MT28C256564W18T Low Voltage, Wireless Temperature Features Figure 1: 88-Ball FBGA Stacked die Combo package • Includes two 128Mb Flash devices
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Original
|
256Mb
32Mb/64Mb
128Mb
09005aef80c7d5a5
MT28C256564W18T
88-ball
|
PDF
|
marking code micron label
Abstract: No abstract text available
Text: 128Mb MULTIBANK ASYNC/PAGE OR BURST FLASH 16Mb/32Mb/64Mb ASYNC/PAGE CellularRAM FLASH AND CellularRAM COMBO MEMORY MT28C128516W18/W30D ADVANCE‡‡ MT28C128532W18/W30D MT28C128564W18/W30D Low Voltage, Wireless Temperature Features Figure 1: 77-Ball FBGA
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Original
|
128Mb
16Mb/32Mb/64Mb
09005aef80b10a55
MT28C128564W18D
marking code micron label
|
PDF
|
MT28C256
Abstract: No abstract text available
Text: PRELIMINARY‡ 256Mb MULTIBANK ASYNC/PAGE OR BURST FLASH 32Mb/64Mb ASYNC/PAGE CellularRAM COMBO FLASH AND CellularRAM COMBO MEMORY MT28C256532W18D MT28C256564W18D Low Voltage, Wireless Temperature Features Figure 1: 88-Ball FBGA Stacked die Combo package
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Original
|
256Mb
32Mb/64Mb
128Mb
09005aef80f1c46d
MT28C256564W18D
MT28C256
|
PDF
|
q001
Abstract: M29W256GH
Text: 256Mb: 3V Embedded Parallel NOR Flash Features Parallel NOR Flash Embedded Memory M29W256GH, M29W256GL Features • VPP/WP# pin protection – Protects first or last block regardless of block protection settings • Software protection – Volatile protection
|
Original
|
256Mb:
M29W256GH,
M29W256GL
60ns1,
32-word
64-byte)
256-word
128-Kbytes
64-Kwords
09005aef84bd3b68
q001
M29W256GH
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PRELIMINARY‡ 256Mb MULTIBANK BURST FLASH 32Mb/64Mb BURST CellularRAM COMBO FLASH AND CellularRAM COMBO MEMORY MT28C256532W18T MT28C256564W18T Low Voltage, Wireless Temperature Features Figure 1: 88-Ball FBGA Stacked die Combo package • Includes two 128Mb Flash devices
|
Original
|
256Mb
32Mb/64Mb
MT28C256532W18T
MT28C256564W18T
88-Ball
128Mb
09005aef80c7d5a5
MT28C256564W18T
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PRELIMINARY‡ 256Mb MULTIBANK ASYNC/PAGE OR BURST FLASH 32Mb/64Mb ASYNC/PAGE CellularRAM COMBO FLASH AND CellularRAM COMBO MEMORY MT28C256532W18D MT28C256564W18D Low Voltage, Wireless Temperature Features Figure 1: 88-Ball FBGA Stacked die Combo package
|
Original
|
256Mb
32Mb/64Mb
MT28C256532W18D
MT28C256564W18D
88-Ball
128Mb
70ARY
09005aef80f1c46d
|
PDF
|
on 4673 equivalent
Abstract: 72V271LA IDT72V261LA IDT72V271LA
Text: 3.3 VOLT CMOS SUPERSYNC FIFO 16,384 x 9 32,768 x 9 PRELIMINARY IDT72V261LA IDT72V271LA Integrated Device Technology, Inc. FEATURES: • Choose among the following memory organizations: IDT72V261LA 16,384 x 9 IDT72V271LA 32,768 x 9 • Pin-compatible with the IDT72V281/72V291 and
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Original
|
IDT72V261LA
IDT72V271LA
IDT72V281/72V291
IDT72V2101/72V2111SuperSync
IDT72261/72271
on 4673 equivalent
72V271LA
IDT72V261LA
IDT72V271LA
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PRELIMINARY‡ 256Mb MULTIBANK BURST FLASH 32Mb/64Mb ASYNC/PAGE CellularRAM COMBO FLASH AND CellularRAM COMBO MEMORY MT28C256532W18S MT28C256564W18S Low Voltage, Wireless Temperature Features Figure 1: 88-Ball FBGA Stacked die Combo package • Includes two 128Mb Flash devices
|
Original
|
256Mb
32Mb/64Mb
128Mb
09005aef80bcd58d
MT28C256564W18S
|
PDF
|
marking code micron label
Abstract: INTEL flash part MARKING
Text: PRELIMINARY‡ 128Mb MULTIBANK BURST FLASH 16Mb/32Mb/64Mb ASYNC/PAGE CellularRAM FLASH AND CellularRAM COMBO MEMORY MT28C128516W18/W30D PREVIEW‡‡ MT28C128532W18/W30D MT28C128564W18/W30D Low Voltage, Wireless Temperature Features Figure 1: 77-Ball FBGA
|
Original
|
128Mb
16Mb/32Mb/64Mb
09005aef80b10a55
MT28C128564W18D
marking code micron label
INTEL flash part MARKING
|
PDF
|
INFINEON "part marking"
Abstract: marking code micron label
Text: PRELIMINARY‡ 128Mb MULTIBANK BURST FLASH 32Mb/64Mb BURST CellularRAM COMBO FLASH AND CellularRAM COMBO MEMORY MT28C128532W18/W30E MT28C128564W18/W30E Low Voltage, Wireless Temperature Features Figure 1: 77-Ball FBGA Stacked die Combo package • Includes two 64Mb Flash devices
|
Original
|
128Mb
32Mb/64Mb
09005aef80b10a55
MT28C128564W18E
INFINEON "part marking"
marking code micron label
|
PDF
|
IDT72255
Abstract: IDT72265
Text: CMOS SUPERSYNC FIFO 8,192 x 18, 16,384 x 18 IDT72255 IDT72265 Integrated Device Technology, Inc. FEATURES: • • • • • • • • • • • • • • • • 8,192 x 18-bit storage capacity IDT72255 16,384 x 18-bit storage capacity (IDT72265)
|
Original
|
IDT72255
IDT72265
18-bit
IDT72255)
IDT72265)
Word15mA
IDT72255
IDT72265
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 256Mb: 3V Embedded Parallel NOR Flash Features Parallel NOR Flash Embedded Memory M29W256GH, M29W256GL Features • VPP/WP# pin protection – Protects first or last block regardless of block -protection settings • Software protection – Volatile protection
|
Original
|
256Mb:
M29W256GH,
M29W256GL
128-word
256-byte)
64-bit
JESD47H-compliant
09005aef84bd3b68
256mb
|
PDF
|
|
W18 SMD MARKING CODE
Abstract: w18 SMD INFINEON PART MARKING W18 64 smd marking code micron label 60ns2
Text: PRELIMINARY‡ 128Mb MULTIBANK ASYNC/PAGE OR BURST FLASH 16Mb/32Mb/64Mb ASYNC/PAGE CellularRAM FLASH AND CellularRAM COMBO MEMORY MT28C128516W18/W30D PREVIEW‡‡ MT28C128532W18/W30D MT28C128564W18/W30D Low Voltage, Wireless Temperature Features Figure 1: 77-Ball FBGA
|
Original
|
128Mb
16Mb/32Mb/64Mb
09005aef80b10a55
MT28C128564W18D
W18 SMD MARKING CODE
w18 SMD
INFINEON PART MARKING
W18 64 smd
marking code micron label
60ns2
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PRELIMINARY‡ 256Mb MULTIBANK BURST FLASH 32Mb/64Mb ASYNC/PAGE CellularRAM COMBO FLASH AND CellularRAM COMBO MEMORY MT28C256532W18D MT28C256564W18D Low Voltage, Wireless Temperature Features Figure 1: 88-Ball FBGA Stacked die Combo package • Includes two 128Mb Flash devices
|
Original
|
256Mb
32Mb/64Mb
128Mb
09005aef80bcd58d
MT28C256564W18D
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 3.3 VOLT CMOS SUPERSYNC FIFO 16,384x9, 32,768x9 IDT72V261 IDT72V271 In teg ra ted D e v ic e T e c h n o lo g y , l i e . FEATURES: • 3.3 Volt operation saves 60 percent of power compared to the functionally compatible 5 Volt IDT72261/72271 family 16,384 x 9-bit storage capacity IDT72V261
|
OCR Scan
|
384x9,
768x9
IDT72V261
IDT72V271
IDT72261/72271
IDT72V261)
IDT72V271)
|
PDF
|
Untitled
Abstract: No abstract text available
Text: CMOS SUPERSYNC FIFO 8,192 x 18 16,384 x 18 PRELIMINARY IDT72255LA IDT72265LA Integrated Device Technology, Inc. FEATURES: • Choose among the following memory organizations: IDT72255LA 8 ,1 9 2 x 1 8 IDT72265LA 1 6 ,3 8 4 x 1 8 • Pin-compatible with the IDT72275/72285 SuperSync FI FOs
|
OCR Scan
|
IDT72255LA
IDT72265LA
IDT72275/72285
492-M
IDT77105
25Mb/s
64-PIN
|
PDF
|
Untitled
Abstract: No abstract text available
Text: CMOS SUPERSYNC FIFO 16,384x9, 32,768x9 IDT72261 IDT72271 Integrated Device Technology, Inc. DESCRIPTION: FEATURES: • • • • • • • • • • • • • • • • 16,384 x 9-bit storage capacity IDT72261 32,768 x 9-bit storage capacity (IDT72271)
|
OCR Scan
|
384x9,
768x9
IDT72261
IDT72271
IDT72261
IDT72271
i-M74
S10-U9-2070
PSC-4036
IDT77105
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 3.3 VOLT CMOS SUPERSYNC FIFO 16,384x9 32,768 x 9 PRELIMINARY IDT72V261 LA IDT72V271 LA Integrated Device Technology, Inc. FEATURES: • Choose among the following memory organizations: IDT72V261 LA 1 6 ,3 8 4 x 9 IDT72V271 LA 3 2 ,7 6 8 x 9 • P in -c o m p a tib le w ith the ID T 7 2 V 2 8 1 /7 2 V 2 9 1 and
|
OCR Scan
|
384x9
IDT72V261
IDT72V271
IDT72V2101/72V2111
IDT72261/72271
492-M
IDT77105
25Mb/s
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 3.3 VOLT CMOS SUPERSYNC FIFO 16,384x9, 32,768x9 IDT72V261 IDT72V271 Ivtegiated D evice Technology, l i e . FEATURES: • 3.3 Volt operation saves 60 percent of power compared to the functionally compatible 5 Volt IDT72261/72271 family 16,384 x 9-bit storage capacity IDT72V261
|
OCR Scan
|
384x9,
768x9
IDT72V261
IDT72V271
IDT72261/72271
IDT72V261)
IDT72V271)
60ns2
|
PDF
|
a5aa
Abstract: No abstract text available
Text: 3.3 VOLT CMOS SUPERSYNC FIFO 16,384x9, 32,768x9 FEATURES: • 3.3 Volt operation saves 60 percent of power compared to the functionally compatible 5 Volt IDT72261/72271 family IDT72V261 IDT72V271 for exceptionally low power consumption. These FIFOs are
|
OCR Scan
|
384x9,
768x9
IDT72V261
IDT72V271
IDT72261/72271
IDT72V261)
IDT72V271)
60ns2
a5aa
|
PDF
|
Untitled
Abstract: No abstract text available
Text: CMOS SUPERSYNC FIFO 8 ,1 9 2 x 1 8 ,1 6 ,3 8 4 x 1 8 FEATURES: • • • • • • • • • • • • • • • • 8,192 x 18-bit storage capacity IDT72255 16,384 x 18-bit storage capacity (IDT72265) 10ns read/write cycle time (8ns access time)
|
OCR Scan
|
18-bit
IDT72255)
IDT72265)
|
PDF
|
Untitled
Abstract: No abstract text available
Text: CMOS SUPERSYNC FIFO 16,384x9 32,768 x 9 PRELIMINARY IDT72261 LA IDT72271 LA Integrated Device Technology, Inc. FEATURES: • Choose among the following memory organizations: IDT72261 LA 1 6 ,3 8 4 x 9 IDT72271 LA 3 2 ,7 6 8 x 9 • Pin-compatible with the IDT72281/72291 SuperSync FIFOs
|
OCR Scan
|
384x9
IDT72261
IDT72271
IDT72281/72291
492-M
IDT77105
25Mb/s
64-PIN
|
PDF
|